REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Redrawn with changes. Add case outline X. Technical and editorial changes throughout. 95-03-23 M. A. FRYE D Add device types 03 and 04. 95-04-28 M. A. FRYE E Make changes to figure 3, figure 4, and table II. -ro 98-06-11 R. MONNIN F Drawing updated to reflect current requirements. -rrp 05-01-04 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY DAN WONNELL STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil CHECKED BY SANDRA ROONEY APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, CMOS, MULTIPLEXER, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-03-11 REVISION LEVEL F SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 1 OF 5962-92042 13 5962-E062-05 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92042 Federal stock class designator \ RHA designator (see 1.2.1) 01 M E A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 02 03 04 Circuit function DG408A DG409A ADG408 ADG409 8-channel analog multiplexer Dual 4-channel analog nmultiplexer 8-channel analog multiplexer Dual 4-channel analog multiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter E F X 2 Descriptive designator GDIP1-T16 or CDIP2-T16 GDFP2-F16 or CDFP3-F16 CDFP4-F16 CQCC1-N20 Terminals 16 16 16 20 Package style Dual-in-line Flat pack Flat pack Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 2 1.3 Absolute maximum ratings. 1/ Supply voltage between V+ and V- ................................................ 44 V dc Supply voltage between V- and GND............................................. 25 V dc Digital input range VS, VD to V- 2/ ................................................. (V-) -2.0 V dc to (V+) +2.0 V dc or 20 mA, whichever occurs first Current (any terminal except for S or D) continuous ...................... 30 mA Current (S or D) continuous ........................................................... 20 mA Current (S or D) pulsed, 1 ms, 10% duty cycle .............................. 40 mA Storage temperature range ............................................................ -65°C to +150°C Lead temperature (soldering, 10 seconds maximum) .................... +300°C Junction temperature (TJ)............................................................... +175°C Power dissipation (PD): 3/ Case outline E at TA = +75°C ...................................................... 900 mW Case outlines F and X at TA = +70°C .......................................... 485 mW Case outline 2 at TA = +75°C....................................................... 750 mW Thermal resistance, junction-case (θJC) .......................................... See MIL-STD-1835 1.4 Recommended operating conditions. Positive supply voltage (V+)........................................................... Negative supply volatge (V-) .......................................................... Digital input LOW voltage (VAL) ...................................................... Digital input HIGH voltage (VAH)..................................................... Ambient operating temperature range (TA) .................................... +15 V dc -15 V dc < 0.8 V dc > 2.4 V dc -55°C to +125°C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ 2/ 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to the maximum current rating. For case outline 2, derate above +75°C linearly at 10 mW/°C. For case outline E, derate above +75°C linearly at 12 mW/°C. For case outlines F and X, derate above +70°C linearly at 6.06 mW/°C. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 3 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Block diagram. The block diagram shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 82 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 4 TABLE I. Electrical performance characteristics. Test Drain-source ON resistance Symbol rDS(ON) Conditions -55°C ≤ TA ≤ +125°C V+ = +15 V, V- = -15 V Group A subgroups Device type unless otherwise specified VD = ±10 V, VAL = 0.8 V, VAH = 2.4 V, IS = -10 mA 1,3 01,02 Sequence each switch ON 2 Min VD = ±10 V, VAL = 0.8 V, VAH = 2.4 V, IS = 1 mA Difference in drain- 1/ source ON resistance ∆rDS(ON) Source OFF leakage current 1,3 Sequence each switch ON 2 VD = ±10 V, VAL = 0.8 V, VAH = 2.4 V, IS = -10 mA 1 VD = ±10 V, VAL = 0.8 V, VAH = 2.4 V, IS = 1 mA between channels IS(OFF) 1 VS = ±10 V, VD = + 10 V, VEN = 0 V ID(OFF) VS = ±10 V, VD = + 10 V, 1 VEN = 0 V 2 1 03,04 ID(ON) VS = VD = ±10 V, 1 VAL = 0.8 V, VAH = 2.4 V, 2 VEN = 0 V 1 Sequence each switch ON 2 1 Ω 100 01,02 15 03,04 15 All 01 02,03 04 2 Drain ON leakage current Max 100 125 2 1 Unit 125 2 Drain OFF leakage current Limits 01 02,04 03 2 -0.5 +0.5 -50 +50 -1 +1 -200 +200 -1 +1 -100 +100 -1 +1 -50 +50 -1 +1 -200 +200 -1 +1 -150 +150 -1 +1 -100 +100 Ω nA nA nA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 5 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55°C ≤ TA ≤ +125°C V+ = +15 V, V- = -15 V Group A subgroups Device type unless otherwise specified Logic input current, IAH VEN = 0.8 V, VA = 2.4 V IAL VEN = 0 V, VA = 0 V Switching time of multiplexer tTRANS See figure 4 (transition) Enable turn ON time tON(EN) Enable turn OFF time Limits Min Unit Max All -10 -10 +10 1,2,3 All -10 +10 -10 +10 9,10,11 All 250 ns See figure 4 (enable) 9,11 All 150 ns tOFF(EN) See figure 4 (enable) 9,10,11 All 150 Break-before-make interval tOPEN See figure 4 (break-beforemake) 9 All Positive supply current I+(SB) VEN = 0 V, VA = 0 V 1,2,3 01,02 75 03,04 5 input voltage high Logic input current, VEN = 0.8 V, VA = 15 V input voltage low VEN = 2.4 V, VA = 0 V 10 standby Negative supply current I-(SB) VEN = 0 V, VA = 0 V 1,2,3 standby Positive supply current I+ VEN = 2.4 V, VA = 0 V 1,3 10 01,02 I- VEN = 2.4 V, VA = 0 V Functional tests FT See 4.4.1b ns ns µA µA -75 03,04 5 01,02 0.5 03,04 0.2 mA 2 2 Negative supply current µA 225 2 1,3 +10 µA 1,2,3 0.5 1,2,3 All 7,8 All -0.5 mA 1/ ∆rDS(ON) = rDS(ON) max - rDS(ON) min. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 6 Device types Case outlines Terminal number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 01 and 03 02 and 04 01 and 03 02 and 04 E, F, and X 2 Terminal symbol A0 EN VS1 S2 S3 S4 D S8 S7 S6 S5 V+ GND A2 A1 --------- A0 EN VS1A S2A S3A S4A DA DB S4B S3B S2B S1B V+ GND A1 --------- NC A0 EN VS1 NC S2 S3 S4 D NC S8 S7 S6 S5 NC V+ GND A2 A1 NC A0 EN VS1A NC S2A S3A S4A DA NC D8 S4B S3B S2B NC S1B V+ GND A1 FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 7 Device types 01 and 03 A2 X 0 0 0 0 1 1 1 1 A1 X 0 0 1 1 0 0 1 1 A0 X 0 1 0 1 0 1 0 1 EN 0 1 1 1 1 1 1 1 1 ON SWITCH NONE 1 2 3 4 5 6 7 8 Device types 02 and 04 A1 X 0 0 1 1 NOTE: A2 X 0 1 0 1 EN 0 1 1 1 1 ON SWITCH NONE 1 2 3 4 Logic “0” = VAL < 0.8 V, logic “1” = VAH > 2.4 V. FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 8 FIGURE 3. Block diagram. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 9 FIGURE 4. Timing diagram. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 10 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125°C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table II herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 11 TABLE II. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M Interim electrical parameters (see 4.2) Device class Q ---- Device class V ---- Final electrical parameters (see 4.2) 1,2,3,7, 8,9,10,11 Group A test requirements (see 4.4) 1,2,3,7,8,9,10,11 1,2,3,7,8,9, 10,11 1,2,3,7,8,9, 10,11 Group C end-point electrical parameters (see 4.4) 1 1 1,2,3,9,10,11 Group D end-point electrical parameters (see 4.4) 1 1 1,2,3 Group E end-point electrical parameters (see 4.4) 1/ 1,2,3,7, 8,9,10,11 ---- --- 1/ 1,2,3,7, 8,9,10,11 --- 1/ --- 1/ PDA applies to subgroup 1. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 12 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-92042 A REVISION LEVEL F SHEET 13 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 05-01-04 Approved sources of supply for SMD 5962-92042 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/ . Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962-9204201MEA 17856 DG408AK/883 1ES66 DG408AK/883B 34371 DG408AK/883 5962-9204201MFA 3/ DG408AL/883B 5962-9204201MXA 17856 DG408AL/883 5962-9204201MXC 1ES66 DG408AL/883B 17856 DG408AL/883 5962-9204201M2A 17856 DG408AZ/883 5962-9204201M2C 1ES66 DG408AZ/883B 5962-9204202MEA 17856 DG409AK/883 1ES66 DG409AK/883B 3/ DG409AK/883 5962-9204202MFA 3/ ADG409AL/883 5962-9204202MXA 17856 DG409AL/883 5962-9204202MXC 1ES66 DG409AL/883B 17856 DG409AL/883 5962-9204202M2A 17856 DG409AZ/883 5962-9204202M2C 1ES66 DG409AZ/883B 1 of 2 STANDARD MICROCIRCUIT DRAWING BULLETIN - CONTINUED. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962-9204203MEA 24355 ADG408TQ/883B 5962-9204203M2A 24355 ADG408TE/883B 5962-9204204MEA 24355 ADG409TQ/883B 5962-9204204M2A 24355 ADG409TE/883B 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed, contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number Vendor name and address 1ES66 Maxim Integrated Products 120 San Gabriel Drive Sunnyvale, CA 94086-5125 17856 Siliconix Incorporated 2201 Laurelwood Road Santa Clara, CA 95054-1516 24355 Analog Devices RT 1 Industrial Park P.O. Box 9106 Norwood, MA 02062 Point of contact: Raheen Business Park Limerick, Ireland 34371 Intersil Corporation 2401 Palm Bay Blvd P.O. Box 883 Melbourne, FL 32902-0883 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. 2 of 2