HS-2700RH Data Sheet Low Power, High Performance Radiation Hardened Operational Amplifier HS-2700RH is radiation hardened internally compensated operational amplifiers which employ dielectric isolation to achieve excellent DC and dynamic performance with very low quiescent power consumption. DC performance of the amplifier input is characterized by high CMRR (106dB), low offset voltage (0.5mV), along with low bias and offset current (5.0nA and 2.5nA respectively). These input specifications, in conjunction with offset null capability and open-loop gain of 300,000V/V, enable HS-2700RH to provide accurate, high-gain signal amplification. Gain bandwidth 1MHz and slew rate of 20V/µs allow for processing of fast, wideband signals. Input and output signal amplitudes of at least ±11V can be accommodated while providing output drive capability of 10mA. For maximum reliability, the output is protected in the event of short circuits to ground. The amplifier operates from a wide range of supplies (±5.5V to ±20V) with a maximum quiescent supply drain of only 150µA. HS-2700RH is therefore, ideally suited to low-power instrumentation and filtering applications that require fast, accurate response over a wide range of signal frequency. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95670. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp August 1999 File Number 3624.2 Features • Electrically Screened to SMD # 5962-95670 • QML Qualified per MIL-PRF-38535 Requirements • Low Power Supply Current . . . . . . . . . . . . . . 150µA (Max) 90µA (Typ) • High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 86dB (Min) 106dB (Typ) • Low Input Bias Current . . . . . . . . . . . . . . . . . . . 20nA (Min) 5nA (Typ) • Low Offset Current . . . . . . . . . . . . . . . . . . . . . . 10nA (Min) 2.5nA (Typ) • Total Dose . . . . . . . . . . . . . . . . . . . . . . . . 1 x 104 RAD(Si) Applications • High Gain Amplifier • Instrumentation Amplifiers • Active Filters • Telemetry Systems • Battery-Powered Equipment Ordering Information INTERNAL MKT. NUMBER ORDERING NUMBER TEMP. RANGE (oC) 5962D9567002VCA HS1-2700RH-Q -55 to 125 5962D9567002VCC HS1B-2700RH-Q -55 to 125 5962D9567002VGA HS2-2700RH-Q -55 to 125 Pinouts HS1-2700RH (CERDIP) GDIP1-T14 OR HS1B-2700RH (SBDIP) CDIP2-T14 TOP VIEW NC 1 14 NC BAL 2 13 NC GUARD 3 BAL 8 BAL 1 7 V+ 12 BAL IN- 4 - 11 V+ IN+ 5 + 10 OUTPUT 6 9 NC V- 7 8 NC GUARD HS2-2700RH (CAN) MACY1-X8 TOP VIEW 1 IN- - 2 IN+ 6 + 5 3 OUT NC 4 V- CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-2700RH Test Circuit ACOUT 1.6K 400 0.1 10K -1/10 +VCC 1 OPEN FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION 2 S3A S1 2 1 1 OPEN 2 1 S2 100 2 50K - S5A 1 S6 2 DUT 1 OPEN - S8 2 S3B 500K S5B 1 + OPEN 2 10K V1 75pF (NOTE) 1 1 BUFFER V2 2K 0.1 1 - + 2 2 OPEN 1 VAC OPEN -1 + S9 x2 -VEE 100 EOUT ALL RESISTORS = ±1% (Ω) ALL CAPACITORS = ±10% (µF) 50K NOTE: Includes stray capacitances. Timing Waveforms VIN VOUT + - 1.6K 75pF 400 FIGURE 1. SIMPLIFIED TEST CIRCUIT +1.0V +40mV INPUT 0V INPUT -40mV 0V -1.0V +4V OVERSHOOT +2.5V ∆V OUTPUT -2.5V -4V ∆T SLEW RATE = ∆V/∆T FIGURE 2. SLEW RATE WAVEFORM +160mV 90% OUTPUT 10% 0V RISE TIME FIGURE 3. TRANSIENT RESPONSE WAVEFORM NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized. 2 HS-2700RH Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified 5 30 4 20 3 CURRENT (mA) VOLTAGE (mV) 2 1 0 -1 -2 -3 BIAS CURRENT 10 0 OFFSET CURRENT -10 -4 -5 -55 -25 0 25 50 75 100 -20 -55 125 -25 FIGURE 4. OFFSET VOLTAGE AS A FUNCTION OF TEMPERATURE 50 75 100 125 10 400 VS = ±15.0V 9 VS = ±15.0V 300 TA = 25oC 8 TA = 25oC BIAS CURRENT (µA) BIAS CURRENT (nA) 25 FIGURE 5. INPUT BIAS CURRENT AND OFFSET CURRENT AS A FUNCTION OF TEMPERATURE 500 200 100 0 -100 -200 7 6 5 4 3 -300 2 -400 1 -500 -20 0 -15 -10 -5 0 5 10 15 20 0 150 POWER SUPPLY CURRENT (µA) TA = 25oC 800 700 600 500 400 300 200 100 0 0 100 200 300 400 500 DIFFERENTIAL INPUT VOLTAGE (mV) FIGURE 8. POWER SUPPLY CURRENT AS A FUNCTION OF DIFFERENTIAL INPUT VOLTAGE 3 25 FIGURE 7. BIAS CURRENT AS A FUNCTION OF DIFFERENTIAL INPUT VOLTAGE VS = ±15.0V 900 20 15 DIFFERENTIAL INPUT VOLTAGE (V) FIGURE 6. BIAS CURRENT AS A FUNCTION OF COMMON MODE VOLTAGE 1000 10 5 COMMON MODE VOLTAGE (V) POWER SUPPLY CURRENT (µA) 0 TEMPERATURE (oC) TEMPERATURE (oC) VS = ±20.0V VS = ±15.0V 120 VS = ±10.0V VS = ±5.5V 90 60 30 0 -55 -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 9. POWER SUPPLY CURRENT AS A FUNCTION OF TEMPERATURE HS-2700RH Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified (Continued) 130 GAIN (dB) 120 110 100 VS = ±20.0V VS = ±15.0V 90 VS = ±10.0V VS = ±5.5V 80 -55 -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 10. VOLTAGE GAIN AS A FUNCTION OF TEMPERATURE NOTE: Open loop (comparator) applications are not recommended, because of the above characteristic. Burn-In Circuits HS1-2700RH CERDIP HS2-2700RH METAL CAN V+ C2 NC 1 14 NC NC 2 13 NC NC 3 12 NC 4 11 5 10 NC VC1 D1 V+ D2 6 9 NC 7 8 NC 2 - C2 3 + 7 4 R1 6 8 D2 C1 D1 R1 C3 V- NOTES: NOTES: 1. R1 = 1MΩ, ±5%, 1/4W (Min) 5. R1 = 1MΩ, ±5%, 1/4W (Min) 2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 6. C1 = 0.01µF/Socket (Min) 3. D1 = D2 = 1N4002 or equivalent (per board) 7. C2 = C3 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 4. |(V+) - (V-)| = 31V ±1V 8. D1 = D2 = 1N4002 or equivalent (per board) 9. |(V+) - (V-)| = 31V ±1V 10. Insulated scope probe must be used during board check-out. 4 HS-2700RH Irradiation Circuit NOTES: 11. R = 1MΩ, ±5%, 1/4W NC 1 14 NC NC 2 13 NC NC 3 12 NC 4 11 5 10 6 9 NC 7 8 NC 12. V1 = +15V + 1.0V 13. V2 = -15V + 1.0V NC V2 V1 R1 GND Schematic Diagram OS- OS+ V1 15Ω 430K Ω V+ IN+ IN2 OUT 3 6 15Ω V+ 4 NOTE: Nominal currents shown in microamperes. 5 HS-2700RH Die Characteristics DIE DIMENSIONS: ASSEMBLY RELATED INFORMATION: 70 mils x 60 mils x 20 mils (1780µm x 1530µm x 1530µm) Substrate Potential (Powered Up): Unbiased INTERFACE MATERIALS: ADDITIONAL INFORMATION: Glassivation: Worst Case Current Density: Type: Nitride Thickness: 7kÅ ±0.7kÅ < 2 x 105 A/cm2 Top Metallization: Type: Aluminum Thickness: 16kÅ ±2kÅ Substrate: Linear Bipolar, DI Backside Finish: Silicon Metallization Mask Layout HS-2700RH +IN -IN V- BAL BAL V+ OUTPUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 6