DG411/883 Data Sheet January 24, 2014 Monolithic Quad SPST CMOS Analog Switches The DG411/883 series monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole throw (SPST) analog switches, and TTL and CMOS compatible digital inputs. These switches feature lower analog ON-resistance (<35Ω) and faster switch time (tON <175ns) compared to the DG211 or DG212. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG411/883 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 40VP-P signals. The power supplies may be single-ended from +5V to +34V, or split from ±5V to ±20V. The four switches are bilateral, equally matched for AC or bidirectional signals. The ON-resistance variation with analog signals is quite low over a ±15V analog input range. This permits independent control of turn-on and turn-off times for SPDT configurations, permitting “break-before-make” or “make-before-break” operation with a minimum of external logic. FN6726.1 Features • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • ON-Resistance <35ΩMax • Low Power Consumption (PD <35mW) • Fast Switching Action - tON <175ns - tOFF <145ns • Low Charge Injection • Upgrade from DG211/DG212 • TTL, CMOS Compatible • Single or Split Supply Operation Applications • Audio Switching • Battery Operated Systems • Data Acquisition • Hi-Rel Systems • Sample and Hold Circuits • Communication Systems Ordering Information PART NUMBER DG411AK/883 TEMP. RANGE (°C) -55 to +125 • Automatic Test Equipment PACKAGE 16 Ld CerDIP PKG. DWG. # F16.3 Pinout DG411/883, (16 LD CERDIP) TOP VIEW IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 (NC) NO CONNECTION 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2008, 2014. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. DG411/883 Functional Diagram Four SPST Switches per Package Switches Shown for Logic “1” Input DG411/883 S1 IN1 D1 S2 IN2 D2 S3 IN3 D3 S4 IN4 D4 TABLE 1. TRUTH TABLE Pin Description PIN SYMBOL DESCRIPTION 1 IN1 Logic Control for Switch 1 2 D1 Drain (Output) Terminal for Switch 1 3 S1 Source (Input) Terminal for Switch 1 4 V- Negative Power Supply Terminal 5 GND 6 S4 Source (Input) Terminal for Switch 4 7 D4 Drain (Output) Terminal for Switch 4 8 IN4 Logic Control for Switch 4 9 IN3 Logic Control for Switch 3 10 D3 Drain (Output) Terminal for Switch 3 11 S3 Source (Input) Terminal for Switch 3 12 VL Logic Reference Voltage 13 V+ Positive Power Supply Terminal (Substrate) 14 S2 Source (Input) Terminal for Switch 2 15 D2 Drain (Output) Terminal for Switch 2 16 IN2 Logic Control for Switch 2 LOGIC SWITCH 0 ON 1 OFF NOTE: Logic “0” ≤0.8V. Logic “1” ≥2.4V. Ground Terminal (Logic Common) 2 FN6726.1 January 24, 2014 DG411/883 Absolute Maximum Ratings Thermal Information V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44V GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25V VL (Note 3) . . . . . . . . . . . . . . . . . . . . . . . .(GND -0.3V) to (V+) +0.3V Digital Inputs, VS, VD (Note 4) . . . . . .(V-) -2V to (V+) + 2V or 30mA, Whichever Occurs First Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA Current, S or D (Pulsed 1ms, 10% Duty Cycle) . . . . . . . . . . . 100mA Thermal Resistance (Typical, Notes 1, 2) θJA (°C/W) θJC (°C/W) 16 Ld CERDIP Package. . . . . . . . . . . . 75 20 Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Operating Temperature (A Suffix) . . . . . . . . . . . . . .-55°C to +125°C Storage Temperature Range (A Suffix) . . . . . . . . . .-65°C to +125°C Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300°C Operating Conditions Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Max Operating Temperature Range . . . . . . . . . . . . . . . .-55°C to +125°C Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V Max Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V Min Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .≤20ns CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 1. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 2. For θJC, the "case temp" location is the center of the ceramic on the package underside 3. VIN = Input Voltage to Perform Proper Function. 4. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. DC Electrical Specifications Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Drain-to-Source ON-Resistance rDS(ON) Source OFF Leakage Current IS(OFF) GROUP A SUBGROUP TEMPERATURE (°C) MIN (Note 5) MAX (Note 5) UNITS V+ = +13.5V, V- = -13.5V, IS = -10mA, VD = ±8.5V VIN = 0.8V 1, 3 +25, -55 0 35 Ω 2 +125 0 45 Ω V+ = +10.8V, V- = -0V, IS = -10mA, VD = 3.0V and 8.0V VIN = 0.8V 1, 3 +25, -55 0 80 Ω 2 +125 0 100 Ω 1 +25 -0.25 +0.25 nA 2, 3 +125, -55 -20 +20 nA CONDITIONS V+ = 16.5V, V- = -16.5V, VD = -15.5V, VS = 15.5V VIN = 2.4V V+ = 16.5V, V- = -16.5V, VD = 15.5V, VS = -15.5V VIN = 2.4V Drain OFF Leakage Current ID(OFF) V+ = 16.5V, V- = -16.5V, VD = -15.5V, VS = 15.5V VIN = 2.4V V+ = 16.5V, V- = -16.5V, VD = 15.5V, VS = -15.5V VIN = 2.4V 3 1 +25 -0.25 +0.25 nA 2, 3 +125, -55 -20 +20 nA 1 +25 -0.25 +0.25 nA 2, 3 +125, -55 -20 +20 nA 1 +25 -0.25 +0.25 nA 2, 3 +125, -55 -20 +20 nA FN6726.1 January 24, 2014 DG411/883 Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified. (Continued) DC Electrical Specifications LIMITS PARAMETERS Channel ON Leakage Current SYMBOL CONDITIONS ID(ON) + IS(ON) V+ = 16.5V, V- = -16.5V, VS = VD = ±15.5V GROUP A SUBGROUP TEMPERATURE (°C) MIN (Note 5) MAX (Note 5) UNITS 1 +25 -0.4 +0.4 nA 2, 3 +125, -55 -40 +40 nA Input Current with VIN Low IIL Input Under Test = 0.8V, All Others = 2.4V 1, 2, 3 +25, +125, -55 -0.5 +0.5 µA Input Current with VIN High IIH Input Under Test = 2.4V, All Others = 0.8V 1, 2, 3 +25, +125, -55 -0.5 +0.5 µA Positive Supply Current I+ V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V 1 +25 - +1.0 µA 2, 3 +125, -55 - +5.0 µA V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V 1 +25 - +1.0 µA 2, 3 +125, -55 - +5.0 µA Negative Supply Current I- Logic Supply Current IL Ground Current IGND AC Electrical Specifications V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V 1 +25 -1.0 - µA 2, 3 +125, -55 -5.0 - µA V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V 1 +25 -1.0 - µA 2, 3 +125, -55 -5.0 - µA V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V 1 +25 - +1.0 µA 2, 3 +125, -55 - +5.0 µA V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V 1 +25 - +1.0 µA 2, 3 +125, -55 - +5.0 µA V+ = 16.5V, V- = -16.5, VIN = 0V or 5.0V 1 +25 -1.0 - µA 2, 3 +125, -55 -5.0 - µA V+ = 13.2V, V- = 0V, VIN = 0V or 5.0V VL = 5.25V 1 +25 -1.0 - µA 2, 3 +125, -55 -5.0 - µA Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified. LIMITS PARAMETERS Turn ON Time Turn OFF Time SYMBOL tON tOFF 4 GROUP A SUBGROUP TEMPERATURE (°C) CL = 35pF, VS = ±10V, RL = 300Ω 9, 11 +25, -55 0 175 ns 10 +125 0 240 ns V+ = 12V, V- = 0V, CL = 35pF, VS = +8V, RL = 300Ω 9, 11 +25, -55 0 250 ns 10 +125 0 400 ns CL = 35pF, VS = ±10V, RL = 300Ω 9, 11 +25, -55 0 145 ns 10 +125 0 160 ns V+ = 12V, V- = 0V, CL = 35pF, VS = +8V, RL = 300Ω 9, 11 +25, -55 0 125 ns 10 +125 0 140 ns CONDITIONS MIN (Note 5) MAX (Note 5) UNITS FN6726.1 January 24, 2014 DG411/883 Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified. Electrical Specifications LIMITS PARAMETERS GROUP A SUBGROUP TEMPERATURE (°C) MIN (Note 5) MAX (Note 5) UNITS VG = 0V, RG = 0Ω, TA = +25°C, CL = 10nF (see Figure 2) 9 +25 -100 +100 pC VG = 6V, RG = 0Ω, TA = +25°C CL = 10nF, V+ = 12V, V- = 0V (see Figure 2) 9 SYMBOL CONDITIONS Q Charge Injection +25 pC +25 -100 +100 pC +25 pC NOTE: 5. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. TABLE 2. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (See “Electrical Spec Tables” on page 3 and page 4) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 6), 2, 3, 9, 10, 11 Group A Test Requirements 1, 2, 3, 9, 10, 11 Groups C and D Endpoints 1 NOTE: 6. PDA applies to Subgroup 1 only. Typical Performance Curves 240 50 40 rDS(ON) (Ω) 35 A: B: C: D: E: F: ±5V ±8V ±10V ±12V ±15V ±20V 210 A V+ = 15V, V- = -15V VL = 5V, VS = 10V 180 tON, tOFF (ns) 45 B 30 C 25 D E 20 F 150 tON 120 tOFF 90 15 60 10 30 5 0 -20 TA = +25°C -15 -10 -5 0 5 DRAIN VOLTAGE (V) 10 15 FIGURE 1. ON-RESISTANCE vs VD AND POWER SUPPLY VOLTAGE 5 20 0 -55 -35 -15 5 25 45 65 TEMPERATURE (°C) 85 105 125 FIGURE 2. SWITCHING TIME vs TEMPERATURE FN6726.1 January 24, 2014 DG411/883 Typical Performance Curves (Continued) 100mA 40 V+ = 15V, V- = -15V 30 VL = 5V, TA = 25oC 10mA V+ = 15V, V- = -15V VL = 5V 20 ID(OFF) 1mA I+, IISUPPLY IS, ID (pA) 10 0 IS(OFF) -10 ID + S(ON) -20 100µA 4SW 10µA IL -30 1µA 4SW -40 100nA -50 -60 -15 -10 -5 0 5 10 DRAIN OR SOURCE VOLTAGE (V) 15 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FIGURE 4. SUPPLY CURRENT vs INPUT SWITCHING FREQUENCY FIGURE 3. LEAKAGE CURRENT vs ANALOG VOLTAGE 100 80 1SW 1SW 10nA 10 140 V+ = 15V, V- = -15V VL = 5V 120 V+ = 15V, V- = -15V VL = 5V CL = 10nF 100 60 80 CL = 10nF Q (pC) Q (pC) 40 20 0 CL = 1nF 60 40 20 0 -20 CL = 1nF -20 -40 -60 -15 -40 -10 -5 0 5 SOURCE VOLTAGE (V) 10 15 FIGURE 5. CHARGE INJECTION vs ANALOG VOLTAGE (VD) 6 -60 -15 -10 -5 0 5 DRAIN VOLTAGE (V) 10 15 FIGURE 6. CHARGE INJECTION vs ANALOG VOLTAGE (VS) FN6726.1 January 24, 2014 DG411/883 Test Circuits VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform tR < 20ns (10% TO 90% VIN) tF < 20ns (90% TO 10% VIN) +5V VL 3V LOGIC INPUT SWITCH INPUT 50% 0V SWITCH VS INPUT SWITCH OUTPUT SWITCH OUTPUT D1 S1 VO IN1 tOFF 0.9 VO CL RL LOGIC INPUT VO +15V V+ GND 0.9 VO V-15V 0V Repeat test for all IN and S. For load conditions, see Specifications CL (includes fixture and stray capacitance) tON NOTE: Logic input waveform is inverted for switches that have the opposite logic sense. V FIGURE 7A. R O L = V S -----------------------------------R L + r DS ( ON ) FIGURE 7B. FIGURE 7. SWITCHING TIME V+ RG ΔVO D1 VO 0V INX VG CL OFF ON OFF OFF ON Q = ΔVO x CL OFF VVIN = 3V GND INX INX dependent on switch configuration input polarity determined by sense of switch. FIGURE 8A. FIGURE 8B. FIGURE 8. CHARGE INJECTION 7 FN6726.1 January 24, 2014 DG411/883 Burn-In Circuit R1 V- C1 D1 VA 1 IN1 IN2 16 2 D1 D2 15 3 S1 S2 14 4 V- V+ 13 5 GND VL 12 6 S4 S3 11 7 D4 D3 10 8 IN4 IN3 R4 R2 V+ D2 C2 VL 9 D3 C3 R4 Typical Schematic Diagram (Typical Channel) V+ S VVL V+ INX D GND V- 8 FN6726.1 January 24, 2014 DG411/883 Die Characteristics WORST CASE CURRENT DENSITY: 1.5 x 105A/cm2 DIE DIMENSIONS: 2760µm x 1780µm x 485 ± 25µm METALLIZATION: Type: SiAl Thickness: 12kÅ ± 1kÅ GLASSIVATION: Type: Nitride Thickness: 8kÅ ± 1kÅ Metallization Mask Layout DG411/883 D1 2 IN1 IN2 1 16 15 D2 S1 3 14 S2 V- 4 13 V+ SUBSTRATE GND 5 12 VL S4 6 11 S3 9 7 8 9 10 D4 IN4 IN3 D3 FN6726.1 January 24, 2014 DG411/883 Ceramic Dual-In-Line Frit Seal Packages (CERDIP) F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A) 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE LEAD FINISH c1 -D- -A- BASE METAL E M -Bbbb S C A-B S -C- S1 0.200 - 5.08 - 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 D - 0.840 - 21.34 5 E 0.220 0.310 5.59 7.87 5 eA e ccc M C A-B S eA/2 c aaa M C A - B S D S D S NOTES - b2 b MAX 0.014 α A A MIN b A L MILLIMETERS MAX A Q SEATING PLANE MIN M (b) D BASE PLANE SYMBOL b1 SECTION A-A D S INCHES (c) NOTES: e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - eA/2 0.150 BSC 3.81 BSC - L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 6 S1 0.005 - 0.13 - 7 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. α 90o 105o 90o 105o - aaa - 0.015 - 0.38 - 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. bbb - 0.030 - 0.76 - ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2, 3 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. N 16 16 5. This dimension allows for off-center lid, meniscus, and glass overrun. 8 Rev. 0 4/94 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9001 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 10 FN6726.1 January 24, 2014