HCS245MS Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting December 1992 Features Pinouts 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K or 1 Mega-RAD(Si) • Latch-Up Free Under Any Conditions • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH DIR 1 A0 2 19 OE A1 3 18 B0 A2 4 17 B1 A3 5 16 B2 A4 6 15 B3 A5 7 14 B4 A6 8 13 B5 A7 9 12 B6 GND 10 11 B7 20 VCC Description The Intersil HCS245MS is a Radiation Hardened Non-Inverting Octal Bidirectional Bus Transceiver, Three-State, intended for two-way asynchronous communication between data busses. The HCS245MS allows data transmission from the A bus to the B bus or from the B bus to the A bus. The logic level at the direction input (DIR) determines the data direction. The output enable input (OE) puts the I/O port in the high-impedance state when high. 20 PIN CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C TOP VIEW 20 VCC 2 19 OE 3 18 B0 A2 4 17 B1 A3 5 16 B2 A4 6 15 B3 A5 7 14 B4 A6 8 13 B5 A7 9 12 B6 10 11 B7 DIR The HCS245MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS245MS is supplied in a 20 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix). A0 A1 1 GND Functional Diagram Truth Table ONE OF 8 TRANSCEIVERS CONTROL INPUTS A DATA OE DIR L L B Data to A Bus L H A Data to B Bus H X Isolation 9 OPERATION (2, 3, 4, 5, 6, 7, 8) B DATA 11 (18, 17, 16, 15, 14, 13, 12) TO OTHER 7 BUFFERS H = High Voltage Level, L = Low Voltage Level, X = Immaterial To prevent excess currents in the High-Z (Isolation) modes, all I/O terminals should be terminated with 10kΩ to 1MΩ resistors. DIR 1 OUTPUT ENABLE 19 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-475 File Number 2468.1 Specifications HCS245MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Impedance . . . . . . . . . . . . . . . . θja θjc Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W 16oC/W 12oC/W Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W Power Dissipation per Package (PD) For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W For TA = +100oC to +125oC Derate Linearly at 13mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 µA 1 +25oC 7.2 - mA 2, 3 +125oC, -55oC 6.0 - mA 1 +25oC 7.2 - mA 2, 3 +125oC, -55oC 6.0 - mA VCC = 4.5V, VIH = 3.15V, IOL = 50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 3.15V, IOH = -50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND, VCC = 4.5V and 5.5V 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 1 +25oC - ±1 µA 2, 3 +125oC, -55oC - ±50 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - SYMBOL ICC Output Current (Sink) IOL Output Current (Source) IOH Output Voltage Low VOL Output Voltage High GROUP A SUBGROUPS (NOTE 1) CONDITIONS VOH Input Leakage Current IIN Three-State Output Leakage Current IOZ Noise Immunity Functional Test FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V Applied Voltage = 0V or VCC VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) LIMITS NOTE: 1. All voltages reference to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. 7-476 Specifications HCS245MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL Propagation Delay Data to Output TPLH TPHL VCC = 4.5V Enable to Output TPZL TPZH VCC = 4.5V Disable to Output GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS 9 +25oC 2 19 ns 2 23 ns 2 26 ns 2 30 ns 2 28 ns 2 33 ns MAX UNITS +125oC, 10, 11 +25oC 9 o 10, 11 TPLZ TPHZ VCC = 4.5V -55oC o +125 C, -55 C o 9 +25 C o 10, 11 o +125 C, -55 C NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance CONDITIONS NOTES TEMPERATURE 1 +25oC VCC = 5.0V, f = 1MHz +125oC, 1 CIN VCC = Open, f = 1MHz +25oC 1 +125oC, 1 Output Transition Time TTHL TTLH VCC = 4.5V -55oC -55oC +25oC 1 +125oC, 1 -55oC MIN Typical 45 pF Typical 45 pF - 10 pF - 10 pF - 12 ns - 18 ns NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current SYMBOL ICC (NOTES 1, 2) CONDITIONS 200K RAD LIMITS 1M RAD LIMITS TEMPERATURE MIN MAX MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 - 3.75 mA 6.0 - 5.0 - mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -6.0 - -5.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD, IOL = 50µA +25oC - 0.1 - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD, IOH = -50µA +25oC VCC -0.1 - VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND +25oC - ±5 - ±5 µA Applied Voltage = 0V or VCC +25oC - ±50 - ±100 µA Input Leakage Current Three-State Output Leakage Current IIN IOZ 7-477 Specifications HCS245MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETERS FN 1M RAD LIMITS (NOTES 1, 2) CONDITIONS TEMPERATURE MIN MAX MIN MAX UNITS VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD (Note 3) +25oC - - - - - SYMBOL Noise Immunity Functional Test 200K RAD LIMITS Propagation Delay Data to Output TPLH TPHL VCC = 4.5V +25oC 2 23 2 28 ns Enable to Output TPZL TPZH VCC = 4.5V +25oC 2 30 2 36 ns Enable to Output TPLZ TPHZ VCC = 4.5V +25oC 2 33 2 33 ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 12µA IOL/IOH 5 -15% of 0 Hour IOZL/IOZH 5 ±200nA PARAMETER TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D READ AND RECORD ICC, IOL/H Sample/5005 1, 7, 9 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. 7-478 Specifications HCS245MS TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN 1/2 VCC = 3V ± 0.5V GROUND VCC = 6V ± 0.5V 50kHz 25kHz - 20 - - - 1 - 9, 11 - 20 - - 11 - 18 1, 20 2-9 19 STATIC BURN-IN I TEST CONNECTIONS (Note 1) 2-9 1, 10 - 19 STATIC BURN-IN II TEST CONNECTIONS (Note 1) - 10 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) - 10 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V - 10 1 - 9, 11 - 20 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. AC Load Circuit AC Timing Diagrams DUT TEST POINT VIH INPUT VS CL VIL TPLH TPHL VOH CL = 50pF VS OUTPUT RL = 500Ω VOL VOH TTLH TTHL 80% VOL 20% 80% 20% OUTPUT AC VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VIL 0 V GND 0 V 7-479 RL HCS245MS Three-State Low Timing Diagrams Three-State Low Load Circuit VCC VIH VS INPUT VIL RL TPZL TPLZ VOZ VT TEST POINT DUT VW OUTPUT VOL CL CL = 50pF TRI-STATE LOW VOLTAGE LEVELS PARAMETER RL = 500Ω HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VT 2.25 V VW 0.90 V 0 V GND Three-State High Timing Diagrams Three-State High Load Circuit VIH TEST POINT DUT VS INPUT VIL TPZH RL TPHZ CL = 50pF RL = 500Ω VOH VT VW OUTPUT VOZ TRI-STATE HIGH VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VT 2.25 V VW 3.60 V 0 V GND All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com File Number 7-480 HCS245MS Die Characteristics DIE DIMENSIONS: 124 x 110 mils METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± -2.6kÅ DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout HCS245MS NC NC DIR (1) VCC (20) NC NC OE (19) A0 (2) (18) B0 A1 (3) (17) B1 A2 (4) (16) B2 A3 (5) (15) B3 A4 (6) (14) B4 A5 (7) (13) B5 (8) A6 (9) A7 (10) GND 7-481 (11) B7 (12) B6