CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type (20V Rating) CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V 14 VDD A 1 13 F G=A 2 B 3 12 L = F H=B 4 • Noise Immunity Greater than 50% 11 E C 5 • No Limit on Input Rise and Fall Times • Low VDD to VSS Current During Slow Input Ramp 10 K = E I=C 6 9 D VSS 7 8 J=D • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC Functional Diagram • Standardized Symmetrical Output Characteristics 1 2 3 4 5 6 9 8 11 10 13 12 A • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” B Applications C • Wave and Pulse Shapers D • High Noise Environment Systems • Monostable Multivibrators E G=A H=B I=C J=D K=E • Astable Multivibrators F Description CD40106BMS consists of six Schmitt trigger circuits. Each circuit functions as an inverter with Schmitt trigger action on the input. The trigger switches at different points for positive and negative going signals. The difference between the positive going voltage (VP) and the negative going voltage (VN) is defined as hysteresis voltage (VH) (see Figure 17). L=F Logic Diagram * A 1 (3, 5, 9, 11, 13) The CD40106BMS is supplied in these 14 lead outline packages: * G 2 (4, 6, 8, 10, 12) VDD Braze Seal DIP H4Q Frit Seal DIP H1B Ceramic Flatpack H3W * ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. 1 OF 6 SCHMITT TRIGGERS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-1327 File Number 3354 Specifications CD40106BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125oC - 200 µA 3 -55oC - 2 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV - V Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 14.95 Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA 1 +25oC 3.5 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA 1 +25oC - -1.4 mA - -3.5 mA -2.8 -0.7 V 0.7 2.8 V Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC VSS = 0V, IDD = 10µA 1 +25oC VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B P Threshold Voltage Functional Positive Trigger Threshold Voltage (See Figure 17) Negative Trigger Threshold Voltage (See Figure 17) VPTH F VP5 V -55oC 1, 2, 3 +25oC, +125oC, -55oC 2.2 +125oC, -55oC 3.6 V VP10 VDD = 10V 1, 2, 3 +25oC, 4.6 7.1 V VP15 VDD = 15V 1, 2, 3 +25oC, +125oC, -55oC 6.8 10.8 V -55oC 0.9 2.8 V 2.5 5.2 V VN5 VDD = 5V 1, 2, 3 +25oC, VN10 VDD = 10V 1, 2, 3 +25oC, +125oC, -55oC 1, 2, 3 +25oC, +125oC, -55oC 4 7.4 V +125oC, -55oC VN15 Hysteresis Voltage (See Figure 17) VDD = 5V VOH > VOL < VDD/2 VDD/2 VDD = 15V +125oC, VH5 VDD = 5V 1, 2, 3 +25oC, 0.3 1.6 V VH10 VDD = 10V 1, 2, 3 +25oC, +125oC, -55oC 1.2 3.4 V 1, 2, 3 +25oC, 1.6 5.0 V VH15 VDD = 15V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-1328 +125oC, -55oC 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD40106BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Transition Time SYMBOL TPHL TPLH CONDITIONS (NOTE 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 280 ns - 378 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 1 µA +125oC - 30 µA µA VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND Output Voltage VOL VDD = 5V, No Load 1, 2 1, 2 1, 2 -55oC, +25oC - 2 +125oC - 60 µA -55oC, +25oC - 2 µA +125oC - 120 µA +25oC, +125oC, - 50 mV -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA +125oC 0.9 - mA -55oC 1.6 - mA +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA -55oC - -1.6 mA +125oC - -2.4 mA -55oC - -4.2 mA 1, 2, 3 +25oC - 140 ns 1, 2, 3 +25oC - 120 ns 1, 2, 3 +25oC - 100 ns 1, 2, 3 +25oC - 80 ns Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Propagation Delay Transition Time IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 TPHL TPLH TTHL TTLH VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V 1, 2 1, 2 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V VDD = 10V VDD = 15V VDD = 10V VDD = 15V 7-1329 1, 2 1, 2 Specifications CD40106BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Input Capacitance CIN CONDITIONS Any Input NOTES TEMPERATURE MIN MAX UNITS 1, 2 +25oC - 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K., Input TR, TF < 20ns TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Supply Current IDD CONDITIONS VDD = 20V, VIN = VDD or GND NOTES TEMPERATURE MIN MAX UNITS 1, 4 +25oC - 7.5 µA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V N Threshold Voltage Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V P Threshold Voltage Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns Functional F VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 7-1330 READ AND RECORD IDD, IOL5, IOH5A Specifications CD40106BMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 CONFORMANCE GROUP Group B Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 Note 1 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13 14 Static Burn-In 2 Note 1 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 Dynamic BurnIn Note 1 - 7 14 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 Irradiation Note 2 9V ± -0.5V 50kHz 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 25kHz NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V AMBIENT TEMPERATURE (TA) = +25oC 30 OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 5V 0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 7-1331 Specifications CD40106BMS 0 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 -5 -10 -15 -10V -20 -25 -15V -30 0 AMBIENT TEMPERATURE (TA) = +25oC 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10V -10 -15V FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS -15 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 (Continued) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) Typical Performance Characteristics FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V SUPPLY VOLTAGE (VDD) = 15V 1.5 12.5 10V 10.0 7.5 VDD VIN CURRENT PEAK VO ALL ID OTHER INPUTS TO VDD OR VSS VO ID 5V 5.0 2 1 1.0 0.5 OUTPUT VOLTAGE (VO) (V) CURRENT PEAK 15 DRAIN CURRENT (ID) (mA) OUTPUT VOLTAGE (VO) (V) 15.0 VDD 10V 10 VIN 2 1 ALL OTHER INPUTS TO VDD OR VSS -55oC +125oC 5V 5 VO 2.5 0 0 2.5 5.0 7.5 10.0 12.5 0 15.0 0 0 5 INPUT VOLTAGE (VI) (V) FIGURE 6. TYPICAL CURRENT AND VOLTAGE TRANSFER CHARACTERISTICS TRANSITION TIME (tTHL, tTLH) (ns) PROPAGATION TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V 100 10V 5V 50 0 0 15 FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE 200 150 10 INPUT VOLTAGE (VI) (V) 20 40 60 80 LOAD CAPACITANCE (CL) (pF) 200 150 100 10V FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE 15V 50 0 0 100 SUPPLY VOLTAGE (VDD) = 5V 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 9. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE 7-1332 CD40106BMS 105 8 6 4 (Continued) TRIGGER THRESHOLD VOLTAGE (VP, VN) (V) POWER DISSIPATION PER TRIGGER (PD) (µW) Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC 2 104 8 SUPPLY VOLTAGE (VDD) = 15V 6 4 5V 2 103 8 10V 6 4 2 102 8 6 4 CL = 50pF CL = 15pF 2 10 10-1 2 4 68 1 2 4 68 2 4 68 2 4 68 10 102 103 INPUT FREQUENCY (f) (kHz) 2 4 68 AMBIENT TEMPERATURE (TA) = +25oC INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13; OTHER INPUTS TIED TO VDD 15 VP 10 VN 5 0 104 FIGURE 10. TYPICAL POWER DISSIPATION PER TRIGGER AS A FUNCTION OF INPUT FREQUENCY 0 5 10 15 20 SUPPLY VOLTAGE (VDD) (V) FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE AS A FUNCTION OF SUPPLY VOLTAGE POWER DISSIPATION (PD) (µW) 25 20 15 HYSTERESIS ( ( VH X 100 PERCENT VDD 104 8 6 4 2 AMBIENT TEMPERATURE (TA) = +25oC 10 5 0 103 8 SUPPLY VOLTAGE (VDD) = 15pF 6 FREQUENCY (f) = 100kHz 4 2 102 10 8 6 4 2 18 10-1 0 5 10 15 20 8 6 4 2 6 4 2 FIGURE 12. TYPICAL PERCENT HYSTERESIS AS A FUNCTION OF SUPPLY VOLTAGE 15V, 1kHz 10V, 1kHz 5V, 1kHz 2 0.1 SUPPLY VOLTAGE (VDD) (V) 15V, 10kHz 4 68 1 AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 15pF 2 4 68 2 4 68 2 4 68 10 102 103 RISE AND FALL TIME (tr, tf) (ns) 2 4 68 104 FIGURE 13. TYPICAL POWER DISSIPATION AS A FUNCTION OF RISE AND FALL TIMES Applications VDD R 1/3 CD4007UB VDD VDD VDD VSS 1 tM 2 VDD C VSS 1/6 CD40106BMS VSS VSS VSS 1/6 CD40106BMS tM = RC n VDD VDD-VP 50kΩ ≤ R ≤ 1MΩ 100pF ≤ C ≤ 1µF FREQUENCY RANGE OF WAVE SHAPE IS FROM DC TO 1MHz FOR THE RANGE OF R AND C GIVEN 5µs < tM < 1s FIGURE 14. WAVE SHAPER FIGURE 15. MONOSTABLE MULTIVIBRATOR 7-1333 CD40106BMS Applications (Continued) tA VDD 1/6 CD40106BMS VSS tA = RC n R VP VN VDD-VN VDD-VP 50kΩ ≤ R ≤ 1MΩ 100pF ≤ C ≤ 1µF C FOR THE RANGE OF R AND C GIVEN 2µs < tA < 0.4s VSS FIGURE 16. ASTABLE MULTIVIBRATOR VP VN VDD VH VIN VH VO VSS VH = VP - VN VIN VDD VO VIN VO VN VP VSS (b) TRANSFER CHARACTERISTIC OF 1 OF 6 GATES (a) DEFINITION OF VP, VN, VH FIGURE 17. HYSTERESIS DEFINITION, CHARACTERISTICS, AND TEST SETUP OUTPUT CHARACTERISTIC INPUT CHARACTERISTIC VDD VOH LOGIC “1” INPUT REGION LOGIC “1” OUTPUT REGION VOL VP VOH VN LOGIC “0” OUTPUT REGION LOGIC “0” INPUT REGION VOL DRIVER VSS FIGURE 18. INPUT AND OUTPUT CHARACTERISTICS 7-1334 LOAD CD40106BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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