Laser Diodes

Opto Devices
Laser Diodes
CONTENTS
■Red / Infrared Dual Wavelength Lasers
■Red Lasers
・・・・
P. E24
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
P. E24
■Infrared Lasers
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
■Part Numbers, Symbols and Definitions
■Packaging Specifications
P. E25
・・・
P. E26
・・・・・・・・・・・・・・・・・・・
P. E28
E
Laser Diodes
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E23
Opto Devices
Laser Diodes
▶ Red / Infrared Dual Wavelength Lasers
▶ Red Lasers
Laser Diodes
Red / Infrared Dual Wavelength Lasers
Part No.
RLD2WMNL2-00x
(For Car)
RLD2WMNL2-01x
(Standard)
☆RLD2WPNR5
(Higher ESD Self pulsation)
Pitch
（μm）
Wavelength
λp
（nm）
Absolute maximum ratings
（Tc=25°
C）
Electrical and optical characteristics
（Tc=25°
C）
Po
Topr
PO
VR
Iop
η
Vop
Im
ɵ⊥
ɵ// （mW）
ITH
Max.
（mW） （V） （°
C） （mA）（mA）（W/A）（V） （mA）（deg）（deg）
663
7
2
85
18
24
0.70
2.3
0.25
28.0
10.0
5
785
7
2
85
15
20
0.70
1.8
0.25
32.0
10.0
5
Package
Equivalent circuit
110
663
7
2
80
18
24
0.70
2.3
0.25
28.0
10.0
5
785
7
2
80
15
20
0.70
1.8
0.25
32.0
10.0
5
663
6
2
70
32
38
0.75
2.3
0.2
36.0
9.0
5
φ5.6mm
（4PIN）
PD
(3)
110
φ5.6mm
（4PIN）
PD
110
790
7
2
70
35
45
0.42
1.9
0.18
40.0
12.0
5
(4)
780nmLD
(2)
660nmLD
(1)
φ5.6mm
（4PIN）
(3)
(4)
780nmLD
(2)
660nmLD
(1)
☆ : Under Development
Notes :1.Unless otherwise specified, the electrical and optical characteristics are typical values.
2.Following characteristics are typical specs. Please contact us for the custom characteristics.
3.The control number is applied in the x of part No.
Red Lasers
Part No.
RLD65MZT7
Wavelength
λp
（nm）
655
Absolute maximum ratings
（Tc=25°
C）
Electrical and optical characteristics
（Tc=25°
C）
Po
Topr
PO
VR
Iop
η
Vop
Im
ɵ⊥
ɵ// （mW）
ITH
Max.
（mW） （V） （°
C） （mA） （mA）（W/A） （V） （mA） （deg）（deg）
7
2
70
20
30
0.70
2.3
0.24
27.0
8.0
Package
5
PD
φ5.6mm
RLD65MQX1
（Higher ESD）
660
10
2
70
15
21
0.85
2.3
0.15
27.0
9.0
Equivalent circuit
(3)
LD
5
(2)
(1)
φ3.5mm
RLD65PZX2
（Higher ESD）
655
7
2
70
25
33
0.60
2.3
0.20
28.0
8.5
5
PD
φ5.6mm
RLD65PZX3
（Higher ESD）
655
12
2
70
25
42
0.60
2.3
0.20
28.0
8.5
(3)
LD
10
(2)
(1)
φ5.6mm
RLD65NZX2
（Higher ESD）
655
7
2
70
25
33
0.60
2.3
0.20
28.0
8.5
5
φ5.6mm
RLD63NZC5
（Pure red）
635
6
2
40
24
33
0.55
2.2
0.18
32.0
8.0
5
φ5.6mm
E
RLD63NPC5
（Pure red）
635
6
2
40
24
33
0.55
2.2
0.18
32.0
8.0
5
PD
Laser Diodes
φ5.6mm（オープン）
☆RLD63NPC6
（Pure red）
635
12
2
50
26
42
0.70
2.2
0.08
34.0
8.0
(3)
LD
(2)
(1)
10
φ5.6mm（オープン）
☆RLD63NPC7
（Pure red）
635
17
2
50
33
57
0.65
2.2
0.12
32.0
8.0
15
φ5.6mm（オープン）
☆RLD63NPC8
（Pure red）
638
24
2
50
35
67
0.65
2.2
0.20
32.0
8.0
20
φ5.6mm（オープン）
Note: Unless otherwise specified, the electrical and optical characteristics are typical values.
E24
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☆ : Under Development
Opto Devices
Laser Diodes
▶ Infrared Lasers
Infrared Lasers
Part No.
Wavelength
λp
（nm）
Absolute maximum ratings
（Tc=25°
C）
Electrical and optical characteristics
（Tc=25°
C）
Po
Topr
PO
VR
Iop
η
Vop
Im
ɵ⊥
ɵ// （mW）
ITH
Max.
（mW） （V） （°
C） （mA） （mA）（W/A） （V） （mA） （deg）（deg）
Package
Equivalent circuit
PD
RLD78NZM5
793
10
2
60
11
20
0.55
1.8
1.15
28.0
9.0
6
(3)
(2)
LD
(1)
φ5.6mm
RLD78MZA6
790
4.5
2
70
25
35
0.35
1.9
0.15
37.0
11.0
3
PD
φ5.6mm
RLD78MZM7
792
20
2
60
11
33
0.65
1.8
0.50
24.0
8.5
(3)
(2)
LD
(1)
15
φ5.6mm
PD
☆RLD78PZM7
792
20
2
60
11
33
0.65
1.8
0.65
24.0
8.5
15
(3)
(2)
LD
(1)
φ5.6mm
PD
☆RLD78NZM7
792
20
2
60
11
33
0.65
1.8
0.90
24.0
8.5
15
(3)
(2)
LD
(1)
φ5.6mm
PD
☆RLD82PZJ1
822
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
(2)
LD
(1)
φ5.6mm
PD
☆RLD82NZJ1
822
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
(2)
LD
(1)
φ5.6mm
PD
☆RLD84PZJ2
842
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
(2)
LD
(1)
φ5.6mm
PD
RLD84NZJ2
842
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
(2)
LD
(1)
φ5.6mm
PD
☆RLD85PZJ4
852
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
(2)
LD
(1)
φ5.6mm
PD
☆RLD85NZJ4
852
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
(2)
LD
(1)
φ5.6mm
☆ : Under Development
Note: Unless otherwise specified, the electrical and optical characteristics are typical values.
●Safety
VISIBLE AND INVISIBLE
SEMICONDUCTOR LASER
AVOID EXPOSURE-lnvisible
Laser radiation is emitted
from this aperture
INVISIBLE LASER RADIATION-AVOID
DIRECT EXPOSURE TO BEAM
MAXIMUM OUTPUT
WAVELENGTH
ROHM Laser Diode
This product complies with 21 CFR
Part 1040.10 and 1040.11
mW
nm
CLASS b LASER PRODUCT
21 Saiin Mizosaki-cho. Ukyo-ku Kyoto
615-8585, Japan.
The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual
equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products
or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical
instruments. transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be
sure to consult with our sales representative in advance.
●About open package products.
With the open package product (Package mark is P), the external environment could deteriorate the characteristics and
reliability of LD. Please be careful to foreign matter including toner, human substance and smoke, corrosion due to ion,
the volatilization component from the glue and flux, condensation, optical tweezers effect and etc. Do not touch the
components including the laser chip emission point.
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E25
E
Laser Diodes
The light emitted from laser diodes, can cause retinal damage if viewed directly.
Never look directly into the laser beam or through any lenses or fibers when the
system is operating.
For optical axis alignment or other operations, we recommend the use of an
infrared-sensitive camera (ITV) or wearing protective goggles.
Opto Devices
Laser Diodes
▶ Part Numbers, Symbols and Definitions
●Part Numbers
LD chip Name
R L D
6 5
Wavelength /
Number of Beams
P
Z
X 2
Polarity
−
0 1 A
Package
MARK
LD common
PD common
MARK
Additional No.
Material Diameter
Pin
Glass window
63
630nm
M
Cathode
Cathode
N
Metal
5.6φ
4
with
65
650nm
N
Anode
Cathode
P
Metal
5.6φ
3
without
78
780nm
P
Cathode
Anode
Q
Metal
3.5φ
3
with
82
820nm
Z
Metal
5.6φ
3
with
84
840nm
85
850nm
2W
2wavelength
●Symbols and Definitions
■Absolute maximum ratings
■Fig.1 Optical Output vs. Forward Current
Parameter
Symbol
Definition
Optical Output
PO
Maximum allowable optical output during continuous or pulse operation. No
kinks will appear in the output vs. forward current curve up to this output
value. (Fig. 1)
Reverse Voltage
VR
The maximum allowable voltage when a reverse bias is applied to the device.
Lasers and photo diodes are rated separately.
Operating
Temperature
Topr
Allowed ambient temperature range when the device is in operation. Delined
to be the case temperature of the device.
Storage
Temperature
Tstg
Allowed temperature range when the device is being stored.
Optical Output [ Po ]
Absolute maximum ratings are values which must not be exceeded even
momentarily regardless of external conditions.
These values are specified for a case temperature TC of 25°
C.
Absolute Maximum
Ratings
■Electrical and Optical Characteristics
E
Laser Diodes
Parameter
Symbol
Threshold current
Ith
In Fig. 2, A is the spontaneous emission range and B is the stimulated emission range.
The threshold current is the current at which laser emission begins.
Operating current
IOP
The forward current required to generate the specified optical output.
Operating voltage
VOP
The forward voltage required to generate the specified optical output.
Differential efficiency
η
The average increase in the output per unit of drive current. In the laser emission range,this is the slope of the
linear optical output vs. forward current curve. (Fig. 2)
Monitor current
Im
When the specified optical output is generated, this is the output current of the photodiode when a specified
reverse voltage is applied to the monitor photodiode.
Parallel
divergence angle
Perpendicular
divergence angle
ɵ//
ɵ⊥
Light emitted from the laser spreads as shown in Fig. 3. The result of measurements of this spread in the
parallel (x) and perpendicular (y) directions with respect to the junction surface is shown in Fig. 3. The widths
of the spread at the points where the strength drops to 1 / 2 the peak strength (half value full angles) are
defined as angles and called ɵ// and ɵ⊥. (Fig. 4)
Parallel deviation angle
Perpendicular
deviation angle
Δφ//
Δφ⊥
These values express the deviation of the optical axis with respect to the reference plane,and are defined for
the parallel and perpendicular spread angles (Fig. 4) to be (a - b) / 2(Fig. 5).
Emission point
accuracy
ΔX, ΔY, ΔZ
This indicates the amount of deviation of the emission point.ΔX and ΔY indicate deviation from the center of
the package, and ΔZ indicates deviation from the reference plane. (Fig. 6)
Peak emission
Wavelength
λ
Peak emission wavelength when generating the specified output. As shown in Fig. 7, the emission spectrum
has both a single mode and a multimode. In the multimode, the wavelength is delined as the wavelength with
the highest intensity.
E26
Definition
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Kink
Forward Current [ IF ]
Opto Devices
Laser Diodes
▶ Part Numbers, Symbols and Definitions
■Fig.3 Radiation Characteristics
Perpendicular transverse mode
■Fig.2 Optical Output vs. Forward Current
Front
Rear
∆PO
∆IF
∆PO
Differential efficiency η=
X
Y
Ith
A
B
Far-field pattern
Parallel transverse mode
∆IF
■Fig.4 Radiation Characteristics
■Fig.5 Deviation Angle
Output
Output
1
1
1/2 peak intensity
0.5
0.5
deg
X
0
θ//
1
Output
0.5
deg
Y
0
deg
0
θ⊥
a
b
■Fig.6 Emission Point Accuracy
■Fig.7 Emission Spectrum
Z
Chip position
z reference plan
X
Optical Intensity
Single mode
x and y
reference point
λ
Multi mode
E
λp
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Wavelengt
Wavelengt
Laser Diodes
Y
Optical Intensity
λp
λ
E27
Opto Devices
Laser Diodes
▶ Packaging Specifications
Packaging Specifications
●Dimensions
(Unit : mm)
φ5.6mm
φ5.6mm (4PIN)
90°
φ3.6
φ4.4
1.0
1.0
φ4.4
φ1.0min.
0.4
φ3.6
0.4
φ1.0min.
90°
Laser Chip
φ5.6
Cover glass
5.6
φ1.6
φ1min
Cover glass
2.3
0.5min
3-φ0.45
φ1.2max
Optical distance＊
Sub-mount
1.18±0.1
(2)
(3)
φ2
(4)
(1)
φ2
(2)
(3)
4-φ0.45
6.5
0.5max.
1.2
±
2.3
6.5
1.2
Optical distance
1.35 0.1
Laser Chip
(1)
φ3.5mm
φ0.5 min.
φ5.6mm (Open)
1.0
φ3.6
φ3.5
φ2.85
0.4
φ4.4
φ1.0min.
90°
φ2.3
3.3
Cover glass
φ5.6
±
6.5
3.4
3-φ0.3
1.35 0.1
1.2
2.3
3.4
Laser Chip
1.0
Optical distance
2.4
Laser Chip
3-φ0.45
1.14
1.1
3
E
(2)
φ2
(3)
2
(1)
1
Laser Diodes
＊ : Please note that differences may exist depending on the part number. Therefore, it is strongly recommended that the customer verify the actual specifications before usage.
E28
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