Laser Diodes

Opto Devices
Laser Diodes
CONTENTS
■Red / Infrared Dual Wavelength Lasers
・・・・・
P. E24
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
P. E24
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
P. E25
■Multi-beam Lasers
■Red Lasers
■Infrared Lasers
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
■Packaging Specifications
・・・・・・・・・・・・・・・・・・・
P. E25
P. E26
E
Laser Diodes
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Opto Devices
Laser Diodes
▶ Red / Infrared Dual Wavelength Lasers
▶ Multi-beam Lasers
Laser Diodes
Red / Infrared Dual Wavelength Lasers
Part No.
Wavelength
λp
（nm）
Absolute maximum ratings
（Tc=25°
C）
Electrical and optical characteristics
（Tc=25°
C）
Po
Topr
PO
VR
Iop
η
Vop
Im
ɵ⊥
ɵ// （mW）
ITH
Max.
（mW） （V） （°
C） （mA）（mA）（W/A） （V） （mA）（deg）（deg）
658
7
2
75
20
27
0.72
2.3
0.13
27.0
8.0
5
782
7
2
75
18
27
0.55
1.8
0.16
32.0
9.0
5
RLD2WMNL2
(For Car DVD)
663
7
2
85
18
24
0.70
2.3
0.25
28.0
10.0
5
785
7
2
85
15
20
0.70
1.8
0.25
32.0
10.0
5
RLD2WMFL3
(Operation guarantee at 80 C)
658
7
2
80
13
18
0.90
2.2
0.15
27.0
8.5
5
Package
Equivalent circuit
RLD2WMFV2
High radiation 4PIN frame
φ5.6mm
（4PIN）
PD
(3)
RLD2WMFR1
(Self pulsation)
RLD2WMFR5
(Higher ESD Self pulsation)
782
7
2
80
12
17
0.85
1.8
0.17
32.0
10.0
5
660
6
2
70
35
45
0.75
2.3
0.13
37.0
9.0
5
790
7
2
70
30
45
0.50
1.9
0.26
39.0
11.0
5
663
6
2
70
35
45
0.75
2.3
0.13
36.0
9.0
5
790
7
2
70
30
45
0.50
1.9
0.26
39.0
11.0
5
High radiation 4PIN frame
(4)
780nmLD
(2)
660nmLD
(1)
High radiation 4PIN frame
High radiation 4PIN frame
Notes :1.Unless otherwise specified, the electrical and optical characteristics are typical values.
2.Following characteristics are typical specs. Please contact us for the custom characteristics.
Multi-beam Lasers
Part No.
RLD2BPNK4
Absolute maximum ratings
Electrical and optical characteristics
（Tc=25°
C）
（Tc=25°
C）
Wavelength
Number Pitch
Po
λp
Topr
of beams（μm）
O
V
R
TH
Vop
Im
ɵ⊥
ɵ// （mW）
P
Iop
η
I
（nm）
Max.
（deg）
（mW）（V） （°
（W/A）（V） （mA）（deg）
C）（mA）（mA）
2
90
792
6
2
60
10
30
0.30
1.8
3.0
29.0
9.5
Package
Equivalent circuit
6
φ5.6mm（4PIN②）
RLD2BPNK5
2
28
787
10
2
60
12
23
0.55
1.8
0.9
27.5
9.0
6
φ5.6mm（4PIN②）
RLD2BPNK2
2
28
787
15
2
60
12
29
0.55
1.8
1.5
27.5
9.0
10
PD
φ5.6mm（4PIN②）
(3)
RLD2BPNG4
(4)
LD2
(2)
LD1
2
28
790
25
2
60
17
48
0.65
2.3
2.0
27.5
10.0
(1)
20
φ5.6mm（4PIN②）
RLD2BPNG3
2
14
788
15
2
60
14
25
0.75
1.8
1.0
31.0
9.0
10
φ5.6mm（4PIN②）
E
RLD2BPND1
2
30
660
15
2
60
13
23
0.60
2.2
0.5
20.0
10.0
6
Laser Diodes
φ5.6mm（4PIN②）
PD
RLD4BPMP2
4
28
792
15
2
60
14
25
0.55
1.7
1.3
27.0
9.0
6
(3)
φ5.6mm（6PIN）
Notes :1.Unless otherwise specified, the electrical and optical characteristics are typical values.
2.Following characteristics are typical specs. Please contact us for the custom characteristics.
E24
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(6)
(5)
(4)
(2)
(1)
LD3
LD4
LD1
LD2
Opto Devices
Laser Diodes
▶ Red Lasers
▶ Infrared Lasers
Red Lasers
Part No.
RLD65MZT7
Wavelength
λp
（nm）
655
Absolute maximum ratings
（Tc=25°
C）
Electrical and optical characteristics
（Tc=25°
C）
Po
Topr
PO
VR
Iop
η
Vop
Im
ɵ⊥
ɵ// （mW）
ITH
Max.
（mW） （V） （°
C） （mA） （mA）（W/A） （V） （mA） （deg）（deg）
7
2
70
20
30
0.70
2.3
0.24
27.0
8.0
Package
5
PD
φ5.6mm
RLD65MQX1
（Higher ESD）
660
10
2
70
15
21
0.85
2.3
0.15
27.0
9.0
Equivalent circuit
(3)
LD
5
(2)
(1)
φ3.5mm
RLD65PZX2
（Higher ESD）
655
7
2
70
25
33
0.60
2.3
0.20
28.0
8.5
5
PD
φ5.6mm
RLD65PZX3
（Higher ESD）
655
12
2
70
25
42
0.60
2.3
0.20
28.0
8.5
(3)
LD
10
(2)
(1)
φ5.6mm
RLD65NZX2
（Higher ESD）
655
7
2
70
25
33
0.60
2.3
0.20
28.0
8.5
5
φ5.6mm
PD
RLD63NZC5
（Pure red）
635
6
2
40
24
33
0.55
2.2
0.18
32.0
8.0
5
(3)
LD
φ5.6mm
RLD63NPC5
（Pure red）
635
6
2
40
24
33
0.55
2.2
0.18
32.0
8.0
(2)
(1)
5
φ5.6mm (Open)
Note: Unless otherwise specified, the electrical and optical characteristics are typical values.
Infrared Lasers
Part No.
Wavelength
λp
（nm）
Absolute maximum ratings
（Tc=25°
C）
Electrical and optical characteristics
（Tc=25°
C）
Po
Topr
PO
VR
Iop
η
Vop
Im
ɵ⊥
ɵ// （mW）
ITH
Max.
（mW） （V） （°
（mA）
（mA）
（W/A）
（V）
（mA）
（deg）
（deg）
C）
Package
Equivalent circuit
PD
RLD78NZM5
793
10
2
60
11
20
0.55
1.8
1.15
28.0
9.0
6
(3)
LD
φ5.6mm
RLD78MRA6
790
4.5
2
70
25
35
0.35
1.9
0.15
37.0
11.0
3
PD
φ5.6mm (Compatible frame)
RLD78MZM7
792
20
2
60
11
33
0.65
1.8
0.50
24.0
8.5
(3)
LD
15
(2)
(1)
(2)
(1)
φ5.6mm
PD
RLD78MFA7
（For Car CD）
790
4.5
2
85
25
35
0.35
1.9
0.15
37.0
11.0
3
(3)
LD
High radiation 4PIN frame
822
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
LD
φ5.6mm
PD
☆RLD84PZJ2
842
220
2
60
50
255
0.95
2.4
0.30
17.0
9.5
200
(3)
φ5.6mm
Note: Unless otherwise specified, the electrical and optical characteristics are typical values.
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LD
(2)
(1)
(2)
(1)
(2)
(1)
☆ : Under development
E25
E
Laser Diodes
PD
☆RLD82PZJ1
(4)
Opto Devices
Laser Diodes
▶ Packaging Specifications
Packaging Specifications
(Unit : mm)
φ5.6mm (6PIN)
φ5.6mm (4PIN②)
90°
±2°
φ1.0min.
0.1
0.4 -0.1
φ3.6
φ3.6
φ4.4
1.0
φ3.6
φ4.4
0.4
1.0
1.0
φ4.4
0.4
φ3.6
0.4
90°
φ1.0min.
φ1.0min.
90°
φ1.0min.
φ5.6mm (4PIN)
90°
φ4.4max.
φ5.6mm
0.1
1.0 -0.1
●Dimensions
0.0
2.3
0.5min
Optical distance＊
Sub-mount
1.18±0.1
0.5
φ1.2max
4-φ0.45
Optical distance＊
Sub-mount
1.35±0.1
6-φ0.3
(2)
(2)
(4)
(3)
(4)
(1)
φ2
φ2
(3)
(1)
φ2
(2)
(3)
6.5 -0.5
4-φ0.45
6.5
φ1.2max
0.5max.
3-φ0.45
6.5
0.5max.
1.2
1.2±0.1
2.3
1.2
±
2.3
Optical distance
1.35 0.1
6.5
1.2
0.5min
Cover glass
0.5 min.
1.35±0.08 (1.27)
Cover glass
Laser Chip
4
5
2
1
3
(1)
6
φ2.4±0.2
Cover glass
5.6 -0.025
φ1.6
φ1min.
5.6
φ1.6
φ1min
Optical distance
Laser Chip
5.6
φ1.6
φ1min
Cover glass
2.3±0.5
Laser Chip
φ5.6
30° 30°
φ0.5 min.
φ3.6
1.0
φ4.4
φ1.0min.
φ3.5
φ2.3
φ2.85
1.2max
Laser Chip
Laser Chip
±
2.3
1.2
6.5
1.35 0.1
3.4
1.75
φ5.6
4-0.45max
(3) (1)
1.6 1.6
5
3-0.4
(2)
Cover glass
5
3-0.55max
90°
0.4
1.0
1.4
3.8
1.35±0.1
0.4
0.6 (Emitting point:Z)
Optical distance
φ5.6mm (Open)
3.4
0.7
2.7
1.6 1.5
3.2
0.25
(Emitting point:Y)
0.22
5.2
4.1max
3.7max
3.05
5.0
2-R0.5min
3.3
0.6
0.75
0.4
0.5
0.7
φ5.6
0.82 1.5
0.62
0.4
High radiation 4PIN frame
2-R0.5min
4.9
2
1
φ3.5mm
Optical distance
2.4
φ5.6mm (Compatible frame)
3-φ0.3
3-φ0.45
(2) (4) (3) (1)
1
4-0.35
1.14
(2)
(3)
1.1
3
φ2
2
(1)
1
＊ : Please note that differences may exist depending on the part number. Therefore, it is strongly recommended that the customer verify the actual specifications before usage.
●Safety
VISIBLE AND INVISIBLE
SEMICONDUCTOR LASER
The light emitted from laser diodes, can cause retinal damage if viewed directly.
Never look directly into the laser beam or through any lenses or fibers when the
system is operating.
For optical axis alignment or other operations, we recommend the use of an
infrared-sensitive camera (ITV) or wearing protective goggles.
E
AVOID EXPOSURE-lnvisible
Laser radiation is emitted
from this aperture
INVISIBLE LASER RADIATION-AVOID
DIRECT EXPOSURE TO BEAM
MAXIMUM OUTPUT
WAVELENGTH
ROHM Laser Diode
This product complies with 21 CFR
Part 1040.10 and 1040.11
mW
nm
CLASS b LASER PRODUCT
21 Saiin Mizosaki-cho. Ukyo-ku Kyoto
615-8585, Japan.
The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual
equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products
or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical
instruments. transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be
sure to consult with our sales representative in advance.
Laser Diodes
E26
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