Power Device-e

Power Device Catalog Vol.4
April 1st, 2016
No.58P6934E-A 04.2016
5000SG
The Industry's First Mass-Produced
SiC"Trench" MOSFET
ROHM now offers SiC power devices featuring a number of characteristics,
including: high breakdown voltage, low power consumption,
and high-speed switching operation not provided by conventional silicon devices.
ROHM, has quickly ramped up full-scale mass production of SiC products for variety of fields.
ROHM expends SiC power devices as a pioneer in the development of SiC.
Wafer
Discrete
"Full SiC" Power Modules
01 Power Device
Power Device 02
The Industry's First Mass-Produced
SiC"Trench" MOSFET
ROHM now offers SiC power devices featuring a number of characteristics,
including: high breakdown voltage, low power consumption,
and high-speed switching operation not provided by conventional silicon devices.
ROHM, has quickly ramped up full-scale mass production of SiC products for variety of fields.
ROHM expends SiC power devices as a pioneer in the development of SiC.
Wafer
Discrete
"Full SiC" Power Modules
01 Power Device
Power Device 02
■ Performance Comparison: SiC vs. Si
Lower power loss and
high temperature operation in
a smaller form factor
Breakdown Electric Field (MV/cm)
Bandgap (eV)
Si 0.3 / SiC
Si 1.1 / SiC
In the power device field for power conversion and
High voltage
Low ON-resistance
High-speed switching
control, SiC (Silicon Carbide) is garnering increased
SiC - the next generation of compact,
energy-saving Eco Devices
material due to its superior characteristics compared
The demand for power is increasing on a global scale every year while fossil fuels
switching speeds, and higher temperature operation.
3.0
Thermal Conductivity (W/cm°
C)
3.2
Si 1.5 / SiC
High temperature
operation (over 250°C)
4.9
High heat
dissipation
attention as a next-generation semiconductor
・Higher voltages & currents
・Low conduction loss
・Reduced switching loss
with silicon, including lower ON-resistance, faster
continue to be depleted and global warming is growing at an alarming rate. This
・Smaller cooling systems
・Higher power density
・System miniaturization
requires better solutions and more effective use of power and resources. ROHM
provides Eco Devices designed for lower power consumption and high efficiency
Implementing SiC devices in a variety of fields,
including the power, automotive, railway,
industrial, and consumer sectors
operation. These include highly integrated circuits utilizing sophisticated, low power
ICs, passive components, opto electronics and modules that save energy and
reduce CO² emissions. Included are next-generation SiC devices that promise even
lower power consumption and higher efficiency.
SiC devices allow for smaller products with lower
■ Power Loss Comparison
Power Loss per Arm
(W)
900
800
power consumption that make mounting possible even
700
in tight spaces. Additional advantages include high
600
voltage and high temperature operation, enabling
500
stable operation under harsh conditions-impossible
400
with silicon-based products. In hybrid vehicles and EVs
300
SiC power solutions contribute to increased fuel
200
economy and a larger cabin area, while in solar power
generation applications they improve power loss by
100
Power loss reduced by 47%,
Switching loss decreased by 85%
Conduction
Loss
[w]
Measurement Conditions
Tj=125°
C
600V
100A
Turn off
loss
[w]
Turn on loss
[w]
0
Si (IGBT+FRD)
SiC (MOSFET+SBD)
approximately 50%, contributing to reduced global
warming.
SiC Wefer
"Full SiC" Power Modules
Discrete
Power transmission systems
Industrial equipment
Reduces power
lossand size
Consumer electronics
Energy-saving air conditioners
and IC cooktops
Reduce power loss
Servers
Reduce data center power
consumption by
minimizing sever power loss
Railway
Reduce inverter size
and weight
EV
(i.e. hybrid/electric vehicles)
Photovoltaics
Increase power
conditioner efficiency
03 Power Device
Reduce cooling system size,
decrease weight,
and increase fuel economy
Power Device 04
■ Performance Comparison: SiC vs. Si
Lower power loss and
high temperature operation in
a smaller form factor
Breakdown Electric Field (MV/cm)
Bandgap (eV)
Si 0.3 / SiC
Si 1.1 / SiC
In the power device field for power conversion and
High voltage
Low ON-resistance
High-speed switching
control, SiC (Silicon Carbide) is garnering increased
SiC - the next generation of compact,
energy-saving Eco Devices
material due to its superior characteristics compared
The demand for power is increasing on a global scale every year while fossil fuels
switching speeds, and higher temperature operation.
3.0
Thermal Conductivity (W/cm°
C)
3.2
Si 1.5 / SiC
High temperature
operation (over 250°C)
4.9
High heat
dissipation
attention as a next-generation semiconductor
・Higher voltages & currents
・Low conduction loss
・Reduced switching loss
with silicon, including lower ON-resistance, faster
continue to be depleted and global warming is growing at an alarming rate. This
・Smaller cooling systems
・Higher power density
・System miniaturization
requires better solutions and more effective use of power and resources. ROHM
provides Eco Devices designed for lower power consumption and high efficiency
Implementing SiC devices in a variety of fields,
including the power, automotive, railway,
industrial, and consumer sectors
operation. These include highly integrated circuits utilizing sophisticated, low power
ICs, passive components, opto electronics and modules that save energy and
reduce CO² emissions. Included are next-generation SiC devices that promise even
lower power consumption and higher efficiency.
SiC devices allow for smaller products with lower
■ Power Loss Comparison
Power Loss per Arm
(W)
900
800
power consumption that make mounting possible even
700
in tight spaces. Additional advantages include high
600
voltage and high temperature operation, enabling
500
stable operation under harsh conditions-impossible
400
with silicon-based products. In hybrid vehicles and EVs
300
SiC power solutions contribute to increased fuel
200
economy and a larger cabin area, while in solar power
generation applications they improve power loss by
100
Power loss reduced by 47%,
Switching loss decreased by 85%
Conduction
Loss
[w]
Measurement Conditions
Tj=125°
C
600V
100A
Turn off
loss
[w]
Turn on loss
[w]
0
Si (IGBT+FRD)
SiC (MOSFET+SBD)
approximately 50%, contributing to reduced global
warming.
SiC Wefer
"Full SiC" Power Modules
Discrete
Power transmission systems
Industrial equipment
Reduces power
lossand size
Consumer electronics
Energy-saving air conditioners
and IC cooktops
Reduce power loss
Servers
Reduce data center power
consumption by
minimizing sever power loss
Railway
Reduce inverter size
and weight
EV
(i.e. hybrid/electric vehicles)
Photovoltaics
Increase power
conditioner efficiency
03 Power Device
Reduce cooling system size,
decrease weight,
and increase fuel economy
Power Device 04
The industry's first mass-produced SiC makes
the previously impossible "possible"
SiC Power Device
SiC MOSFET
TO-247
Evolution to the next generation, 3rd-Generation SiC MOSFET
High speed switching with low ON-resistance
ROHM's 3rd-Generation SiC MOSFET realize the reduction of loss in several kind of application by
SiC enables simultaneous high speed switching with low
it's superior characteristics, lower on-resistans and high speed switching performance.
ON-resistance - normally impossible with silicone-based
products. Additional features include superior electric
characteristics at high temperatures and significantly
lower switching loss, allowing smaller peripheral
[Planar Structure]
[Trench Structure]
(2nd-Generation)
(3rd-Generation)
Metal
Metal
components to be used.
TO-220AB
N+
P
P+
N+
P+
Turn OFF Characteristics (Compared with 1200V-Class Products)
12
Switching loss reduced
by 90% (Max.)
10
Si IGBT
5
0
-5
0
50
100
150
200
250
Time (nsec)
300
350
400
Source
MOSFET
4
0
SiC MOSFET Performance Comparison: Planar vs. Trench
Si Super Junction
MOSFET
50
Drain
Source
MOSFET
SBD
650V
RDS (on)
120mΩ
■ Full SiC Power Module
VDSS
1200V
Comparison of the same-size chip
SiC MOSFET
0
100
Temperature (°C)
150
200
Reduced
by 50％
ON Resistance
ID
180A
Planar MOSFET
80mΩ
Reduced by 35%
C type
Good 0
1700V
80mΩ 160mΩ 280mΩ 450mΩ
—
—
—
—
TO-220AB
SCT2120AF
TO-247
—
TO-268-2L
—
—
—
—
—
TO-3PFM
—
—
—
—
—
SCH2080KE
SCT2160KE SCT2280KE SCT2450KE
SCT2080KE
Low
750mΩ
1150mΩ
—
—
—
—
☆SCT2750NY ☆SCT2H12NY
—
BSM180D12P3C007
Input Capacitance
Trench MOSFET
40mΩ
1200V
RDS (on)
10mΩ
Package
20
40
60
80
100
120
140
160
■ Discrete Lineup (3rd-Generation)
ON Resistance at 25°C (mΩ)
VDSS
Package
Gate
Gate
0.22 to 0.24 ohms
even at 120°C
6
SCH Series
Drain
SiC sub
Metal
Si MOSFET
■ Lineup (2nd-Generation)
■ Internal Circuit Diagram
SCT Series
450
SiC N- Drift layer
SiC sub
Metal
8
2
SiC MOSFET
SiC N- Drift layer
Input Capacitance (pF)
ON-Resistance (Ω)
Current (A)
10
Switching Performance
Vdd=400V
Rg=5.6Ω
15
P
ON-Resistance Temperature Characteristics (Compared with 650V-Class Products)
25
20
Enables the development
of devices featuring lower
conduction loss and
superior switching
performance.
Conduction Loss
2nd-Generation SiC Planar MOSFET
VDSS
Package
3rd-Generation SiC Trench MOSFET
TO-247N
1200V
650V
RDS (on)
30mΩ
22mΩ
☆SCT3030AL
☆SCT3022KL
30mΩ
40mΩ
☆SCT3030KL ☆SCT3040KL
☆Under development
SCT2H12HZ
☆Under development
05 Power Device
Power Device 06
The industry's first mass-produced SiC makes
the previously impossible "possible"
SiC Power Device
SiC MOSFET
TO-247
Evolution to the next generation, 3rd-Generation SiC MOSFET
High speed switching with low ON-resistance
ROHM's 3rd-Generation SiC MOSFET realize the reduction of loss in several kind of application by
SiC enables simultaneous high speed switching with low
it's superior characteristics, lower on-resistans and high speed switching performance.
ON-resistance - normally impossible with silicone-based
products. Additional features include superior electric
characteristics at high temperatures and significantly
lower switching loss, allowing smaller peripheral
[Planar Structure]
[Trench Structure]
(2nd-Generation)
(3rd-Generation)
Metal
Metal
components to be used.
TO-220AB
N+
P
P+
N+
P+
Turn OFF Characteristics (Compared with 1200V-Class Products)
12
Switching loss reduced
by 90% (Max.)
10
Si IGBT
5
0
-5
0
50
100
150
200
250
Time (nsec)
300
350
400
Source
MOSFET
4
0
SiC MOSFET Performance Comparison: Planar vs. Trench
Si Super Junction
MOSFET
50
Drain
Source
MOSFET
SBD
650V
RDS (on)
120mΩ
■ Full SiC Power Module
VDSS
1200V
Comparison of the same-size chip
SiC MOSFET
0
100
Temperature (°C)
150
200
Reduced
by 50％
ON Resistance
ID
180A
Planar MOSFET
80mΩ
Reduced by 35%
C type
Good 0
1700V
80mΩ 160mΩ 280mΩ 450mΩ
—
—
—
—
TO-220AB
SCT2120AF
TO-247
—
TO-268-2L
—
—
—
—
—
TO-3PFM
—
—
—
—
—
SCH2080KE
SCT2160KE SCT2280KE SCT2450KE
SCT2080KE
Low
750mΩ
1150mΩ
—
—
—
—
☆SCT2750NY ☆SCT2H12NY
—
BSM180D12P3C007
Input Capacitance
Trench MOSFET
40mΩ
1200V
RDS (on)
10mΩ
Package
20
40
60
80
100
120
140
160
■ Discrete Lineup (3rd-Generation)
ON Resistance at 25°C (mΩ)
VDSS
Package
Gate
Gate
0.22 to 0.24 ohms
even at 120°C
6
SCH Series
Drain
SiC sub
Metal
Si MOSFET
■ Lineup (2nd-Generation)
■ Internal Circuit Diagram
SCT Series
450
SiC N- Drift layer
SiC sub
Metal
8
2
SiC MOSFET
SiC N- Drift layer
Input Capacitance (pF)
ON-Resistance (Ω)
Current (A)
10
Switching Performance
Vdd=400V
Rg=5.6Ω
15
P
ON-Resistance Temperature Characteristics (Compared with 650V-Class Products)
25
20
Enables the development
of devices featuring lower
conduction loss and
superior switching
performance.
Conduction Loss
2nd-Generation SiC Planar MOSFET
VDSS
Package
3rd-Generation SiC Trench MOSFET
TO-247N
1200V
650V
RDS (on)
30mΩ
22mΩ
☆SCT3030AL
☆SCT3022KL
30mΩ
40mΩ
☆SCT3030KL ☆SCT3040KL
☆Under development
SCT2H12HZ
☆Under development
05 Power Device
Power Device 06
SiC SBD (Schottky Barrier Diodes)
"Full SiC" Power Modules
Switching loss reduced by 85% (Max.)
Significantly lower switching loss
TO-220AC
SBDs were developed utilizing SiC, making them ideal for PFC circuits and inverters.
ROHM has developed low-surge-noise power modules
Ultra-small reverse recovery time (impossible to achieve with silicon FRDs) enables
integrating SiC devices produced in-house, maximizing
high-speed switching. This minimizes reverse recovery charge (Qrr), reducing
high-speed performance. The result is significantly reduced
TO-247
Dual-Chip
switching loss considerably and contributes to end-product miniaturization.
switching loss compared with conventional Si IGBTs.
12
10
8
6
4
2
0
-2
-4
-6
SiC SBD
C type
Features
1 High-speed switching
Switching loss reduced
by 60%
2 Low switching loss
VR=400V
di/dt=350A/μsec
Si FRD
ROHM offers automotive-grade
(AEC-Q101 qualified) products.
3 Fast recovery
LPTL
200
100
Time (nsec)
■ Example: Automotive Charging Circuit
Secondary side
rectification
SiC SBD 1200V
■ Lineup
Package
VRM 650V
12A
15A
IF 6A
8A
10A
TO-220AC
SCS206AG
SCS208AG
SCS210AG
SCS212AG
SCS215AG
SCS220AG
30A
—
40A
—
TO-220FM
SCS206AM SCS208AM
SCS210AM
SCS212AM SCS215AM
SCS220AM
—
—
TO-247
—
—
—
—
SCS215AE
LPTL
SCS206AJ
SCS208AJ
SCS210AJ
SCS212AJ
SCS215AJ
20A
5A
10A
SCS205KG
SCS210KG
1200V
15A
20A
SCS215KG
—
—
—
SCS220AE
SCS230AE2 SCS240AE2
SCS220AE2
—
SCS210KE2
—
—
—
—
—
SCS220AJ
Carrier Frequency = 20kHz
SiC SBD 650V
circuits in electric/hybrid vehicle.
—
200
30A
—
40A
—
—
—
—
SCS220KE2 SCS230KE2 SCS240KE2
—
Switching
loss
100
Package
TO-220AC
TO-247
LPTL
☆Under development
IF 6A
8A
10A
20A
SCS206AGHR SCS208AGHR SCS210AGHR SCS212AGHR SCS215AGHR SCS220AGHR
—
—
—
—
—
30A
—
40A
—
5A
10A
SCS205KGHR SCS210KGHR SCS215KGHR SCS220KGHR
SCS220AE2HR SCS230AE2HR SCS240AE2HR
—
SCS210KE2HR
—
—
—
—
—
SCS206AJHR SCS208AJHR SCS210AJHR SCS212AJHR SCS215AJHR SCS220AJHR
—
30A
—
40A
—
SCS220KE2HR ☆SCS230KE2HR ☆SCS240KE2HR
—
—
SS1
S1D2
Conduction
loss
Thermistor for
temperature monitoring
(BSM300D12P2E001 only)
G2
IGBT 1200V 100A
SS2
Full SiC 1200V 100A
SiC MOSFET
S2
SiC SBD
■ Lineup
—
Automotive grade (AEC-Q101)
1200V
15A
20A
G1
50
Parameter
VRM 650V
12A
15A
Compared to Si IGBT,
Switching lossreduced
by 80%
150
SiC SBD
D1
SiC MOSFET
0
SCS220KG
—
■ Internal Circuit Diagram (Half Bridge Circuit)
Switching Loss Comparison
PFC Boost Diode
ROHM SiC SBD have been adopted in a variety of charging
07 Power Device
E type
TO-220FM
Dissipation per Arm (W)
Current (A)
Switching Waveforms (600V10A)
—
Symbol
Ratings
☆BSM080D12P2C008
BSM120D12P2C005
BSM300D12P2E001
BSM180D12P3C007
Unit
Switching Device
—
3rd-Generation SiC MOSFET
—
Drain-Source Voltage
V DSS
1200
1200
1200
1200
V
Drain Current *1
80
120
300
180
A
Junction Temperature
ID
Tj
-40 to +175
-40 to +150
-40 to +175
-40 to +175
°C
R DS (on) typ.
—
34
7.3
10
Package
—
E Type
C Type
mΩ
—
☆Under development
2nd-Generation SiC MOSFET
20
C Type
*1 Measurement of Tc is to be done at the point just under the chip. Tc=60°C
Power Device 08
SiC SBD (Schottky Barrier Diodes)
"Full SiC" Power Modules
Switching loss reduced by 85% (Max.)
Significantly lower switching loss
TO-220AC
SBDs were developed utilizing SiC, making them ideal for PFC circuits and inverters.
ROHM has developed low-surge-noise power modules
Ultra-small reverse recovery time (impossible to achieve with silicon FRDs) enables
integrating SiC devices produced in-house, maximizing
high-speed switching. This minimizes reverse recovery charge (Qrr), reducing
high-speed performance. The result is significantly reduced
TO-247
Dual-Chip
switching loss considerably and contributes to end-product miniaturization.
switching loss compared with conventional Si IGBTs.
12
10
8
6
4
2
0
-2
-4
-6
SiC SBD
C type
Features
1 High-speed switching
Switching loss reduced
by 60%
2 Low switching loss
VR=400V
di/dt=350A/μsec
Si FRD
ROHM offers automotive-grade
(AEC-Q101 qualified) products.
3 Fast recovery
LPTL
200
100
Time (nsec)
■ Example: Automotive Charging Circuit
Secondary side
rectification
SiC SBD 1200V
■ Lineup
Package
VRM 650V
12A
15A
IF 6A
8A
10A
TO-220AC
SCS206AG
SCS208AG
SCS210AG
SCS212AG
SCS215AG
SCS220AG
30A
—
40A
—
TO-220FM
SCS206AM SCS208AM
SCS210AM
SCS212AM SCS215AM
SCS220AM
—
—
TO-247
—
—
—
—
SCS215AE
LPTL
SCS206AJ
SCS208AJ
SCS210AJ
SCS212AJ
SCS215AJ
20A
5A
10A
SCS205KG
SCS210KG
1200V
15A
20A
SCS215KG
—
—
—
SCS220AE
SCS230AE2 SCS240AE2
SCS220AE2
—
SCS210KE2
—
—
—
—
—
SCS220AJ
Carrier Frequency = 20kHz
SiC SBD 650V
circuits in electric/hybrid vehicle.
—
200
30A
—
40A
—
—
—
—
SCS220KE2 SCS230KE2 SCS240KE2
—
Switching
loss
100
Package
TO-220AC
TO-247
LPTL
☆Under development
IF 6A
8A
10A
20A
SCS206AGHR SCS208AGHR SCS210AGHR SCS212AGHR SCS215AGHR SCS220AGHR
—
—
—
—
—
30A
—
40A
—
5A
10A
SCS205KGHR SCS210KGHR SCS215KGHR SCS220KGHR
SCS220AE2HR SCS230AE2HR SCS240AE2HR
—
SCS210KE2HR
—
—
—
—
—
SCS206AJHR SCS208AJHR SCS210AJHR SCS212AJHR SCS215AJHR SCS220AJHR
—
30A
—
40A
—
SCS220KE2HR ☆SCS230KE2HR ☆SCS240KE2HR
—
—
SS1
S1D2
Conduction
loss
—
Thermistor for
temperature monitoring
(BSM300D12P2E001 only)
G2
IGBT 1200V 100A
SS2
Full SiC 1200V 100A
SiC MOSFET
S2
SiC SBD
■ Lineup
—
Automotive grade (AEC-Q101)
1200V
15A
20A
G1
50
Parameter
VRM 650V
12A
15A
Compared to Si IGBT,
Switching lossreduced
by 80%
150
SiC SBD
D1
SiC MOSFET
0
SCS220KG
—
■ Internal Circuit Diagram (Half Bridge Circuit)
Switching Loss Comparison
PFC Boost Diode
ROHM SiC SBD have been adopted in a variety of charging
07 Power Device
E type
TO-220FM
Dissipation per Arm (W)
Current (A)
Switching Waveforms (600V10A)
Symbol
Ratings
☆BSM080D12P2C008
BSM120D12P2C005
BSM300D12P2E001
BSM180D12P3C007
Unit
Switching Device
—
3rd-Generation SiC MOSFET
—
Drain-Source Voltage
V DSS
1200
1200
1200
1200
V
Drain Current *1
80
120
300
180
A
Junction Temperature
ID
Tj
-40 to +175
-40 to +150
-40 to +175
-40 to +175
°C
R DS (on) typ.
—
34
7.3
10
Package
—
E Type
C Type
mΩ
—
☆Under development
2nd-Generation SiC MOSFET
20
C Type
*1 Measurement of Tc is to be done at the point just under the chip. Tc=60°C
Power Device 08
ROHM offers intelligent products ideal for motor control
IPM (Intelligent Power Module)
IGBT-IPM
600V/15A IPM with built-in PrestoMOSTM
Motor control is integrated into a single package
Contributes to higher efficiency in motor
drive devices
All components required for motor control, including
the power device control IC and peripheral circuitry,
High-efficiency IPM products utilizing ROHM’s PrestoMOSTM.
are incorporated into a single package. ROHM utilizes
Compared to IGBT IPM, loss during normal AC operation is
an IGBT-optimized design customized for a range of
reduced significantly.
applications.
HSDIP25
HSDIP25
HSDIP25-VC
HSDIP25-VC
VDS-ID Features
Features
Adopting an application-specific IGBT results in high-efficiency drive operation
speed switching) featuring an IGBT-optimized design
that supports a variety or requirements
2 An IGBT, FWD (Free Wheeling Diode), bootstrap diode, and gate driver are integrated
into a single package
3 Multiple protection circuits (short-circuit current protection, power
supply UVLO and thermal shutdown circuits) along with a FAULT
signal output function that activates during protection operation
Switching Loss Eoff (μJ)
1 The lineup consists of two series (low-speed/high-
★
Higher
Efficiency
VBV 3
・Fast recovery diode
VBW 4
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
LINU
LINV
LINW
LVCC
10
11
12
13
FO 14
CIN 15
GND 16
24 P
High Side
Gate Driver
(HVIC)
23 U
22 V
21 W
Low Side
Gate Driver
(LVIC)
20 NU
19 NV
18 NW
Protection Circuit
UVLO : Under Voltage Lock Out
SCP : Short Circuit Protection
TSD : Thermal Shut Down
09 Power Device
MOSTM, and gate driver
3 Multiple protection circuits (short-circuit current protection, power
supply UVLO and thermal shutdown circuits) along with a FAULT
signal output function that activates during protection operation
★
Power Loss Comparison with IGBT-IPM
Reduced
approx.
43%
HVIC
(High-side Gate Driver)
・Bootstrap diode current
limiting function
・Floating power supply UVLO
Inverter Part
(IGBT and FWD)
・Low loss field stop
trench IGBT
・Ultra-low VF fast
recovery diode
Condition
Tj=25°C
APF : Annual Performance Factor
IPLV : Integrated Part Value Load
SEER : Seasonal Energy Efficiency Ratio
IGBT-IPM
BM65364S-VA
Reduced
approx.
Reduces loss during
steady-state operation
Improves AC energy-saving indexes
(i.e. APF, IPLV and SEER).
76%
0
0.5
1
1.5
2
VDS (V)
Gen.2:2nd Generation
fc:Carrier Frequency (PWM frequency)
Part No.
BM63363S-VA / -VC
Rating
Application
600V / 10A
Loss (w)
Bootstrap Diodes
・UVLO, SCP, TSD
・Fault signal output
Gen.2 IGBT-IPM
for high speed switching
drive (fc = to 20kHz)
Priority to switching loss
2 Integrates a bootstrap diode, Presto
■ Lineup
VBU 2
LVIC
(Low-side Gate Driver)
efficiency during steady state operation
Gen.2 IGBT-IPM
for low speed switching drive
(fc = to 6kHz)
Priority to conduction loss
Saturation Voltage VCE (sat) (V)
■ Circuit Diagram
1 Using a MOSFET device helps improve
I D (A)
Features
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
600V / 15A
BM63763S-VA / -VC
600V / 10A
BM63764S-VA / -VC
600V / 15A
☆BM63767A-VA / -VC 600V / 30A
☆Under development
IGB T-IPM
High speed switching
fc = to 20kHz
Diode recovery loss
Switching loss (OFF)
Switching loss (ON)
Diode conduction loss
MOS_IGBT
conduction loss
Bootstrap Diodes
・Fast Recovery Diodes
LVIC
(Low-side Gate Driver)
Condition
Ta=25°C
P=400V, Vcc=15V
fc=5kHz, 2Arms
cos φ=0.8
modulation ratio=1
3-phase modulation
Low speed switching
fc = to 6kHz
BM63364S-VA / -VC
■ Circuit Diagram
・UVLO, SCP, TSD
・Fault signal output
24 P
VBU 2
VBV 3
VBW 4
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
LINU
LINV
LINW
LVCC
10
11
12
13
FO
CIN
GND
TEST
14
15
16
17
High Side
Gate Driver
(HVIC)
23 U
22 V
HVIC
(High-side Gate Driver)
・Bootstrap diode current
limiting function
・Floating power supply UVLO
21 W
Inverter Part
(PrestoMOS™)
Low Side
Gate Driver
(LVIC)
20 NU
19 NV
・High-speed trr super
junction MOSFET
・Ultra-low VF body diode
18 NW
Protection Circuits UVLO : Under Voltage Lock Out
SCP : Short Circuit Protection TSD : Thermal Shut Down
BM65364S- VA
■ Lineup
Part No.
Power Device
Rating
Recommended switching frequency
BM65364S-VA / -VC
MOSFET
600V / 15A
fc=to20kHz
Power Device 10
ROHM offers intelligent products ideal for motor control
IPM (Intelligent Power Module)
IGBT-IPM
600V/15A IPM with built-in PrestoMOSTM
Motor control is integrated into a single package
Contributes to higher efficiency in motor
drive devices
All components required for motor control, including
the power device control IC and peripheral circuitry,
High-efficiency IPM products utilizing ROHM’s PrestoMOSTM.
are incorporated into a single package. ROHM utilizes
Compared to IGBT IPM, loss during normal AC operation is
an IGBT-optimized design customized for a range of
reduced significantly.
applications.
HSDIP25
HSDIP25
HSDIP25-VC
HSDIP25-VC
VDS-ID Features
Features
Adopting an application-specific IGBT results in high-efficiency drive operation
speed switching) featuring an IGBT-optimized design
that supports a variety or requirements
2 An IGBT, FWD (Free Wheeling Diode), bootstrap diode, and gate driver are integrated
into a single package
3 Multiple protection circuits (short-circuit current protection, power
supply UVLO and thermal shutdown circuits) along with a FAULT
signal output function that activates during protection operation
Switching Loss Eoff (μJ)
1 The lineup consists of two series (low-speed/high-
★
Higher
Efficiency
VBV 3
・Fast recovery diode
VBW 4
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
LINU
LINV
LINW
LVCC
10
11
12
13
FO 14
CIN 15
GND 16
24 P
High Side
Gate Driver
(HVIC)
23 U
22 V
21 W
Low Side
Gate Driver
(LVIC)
20 NU
19 NV
18 NW
Protection Circuit
UVLO : Under Voltage Lock Out
SCP : Short Circuit Protection
TSD : Thermal Shut Down
09 Power Device
MOSTM, and gate driver
3 Multiple protection circuits (short-circuit current protection, power
supply UVLO and thermal shutdown circuits) along with a FAULT
signal output function that activates during protection operation
★
Power Loss Comparison with IGBT-IPM
Reduced
approx.
43%
HVIC
(High-side Gate Driver)
・Bootstrap diode current
limiting function
・Floating power supply UVLO
Inverter Part
(IGBT and FWD)
・Low loss field stop
trench IGBT
・Ultra-low VF fast
recovery diode
Condition
Tj=25°C
APF : Annual Performance Factor
IPLV : Integrated Part Value Load
SEER : Seasonal Energy Efficiency Ratio
IGBT-IPM
BM65364S-VA
Reduced
approx.
Reduces loss during
steady-state operation
Improves AC energy-saving indexes
(i.e. APF, IPLV and SEER).
76%
0
0.5
1
1.5
2
VDS (V)
Gen.2:2nd Generation
fc:Carrier Frequency (PWM frequency)
Part No.
BM63363S-VA / -VC
Rating
Application
600V / 10A
Loss (w)
Bootstrap Diodes
・UVLO, SCP, TSD
・Fault signal output
Gen.2 IGBT-IPM
for high speed switching
drive (fc = to 20kHz)
Priority to switching loss
2 Integrates a bootstrap diode, Presto
■ Lineup
VBU 2
LVIC
(Low-side Gate Driver)
efficiency during steady state operation
Gen.2 IGBT-IPM
for low speed switching drive
(fc = to 6kHz)
Priority to conduction loss
Saturation Voltage VCE (sat) (V)
■ Circuit Diagram
1 Using a MOSFET device helps improve
I D (A)
Features
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
600V / 15A
BM63763S-VA / -VC
600V / 10A
BM63764S-VA / -VC
600V / 15A
☆BM63767A-VA / -VC 600V / 30A
☆Under development
IGB T-IPM
High speed switching
fc = to 20kHz
Diode recovery loss
Switching loss (OFF)
Switching loss (ON)
Diode conduction loss
MOS_IGBT
conduction loss
Bootstrap Diodes
・Fast Recovery Diodes
LVIC
(Low-side Gate Driver)
Condition
Ta=25°C
P=400V, Vcc=15V
fc=5kHz, 2Arms
cos φ=0.8
modulation ratio=1
3-phase modulation
Low speed switching
fc = to 6kHz
BM63364S-VA / -VC
■ Circuit Diagram
・UVLO, SCP, TSD
・Fault signal output
24 P
VBU 2
VBV 3
VBW 4
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
LINU
LINV
LINW
LVCC
10
11
12
13
FO
CIN
GND
TEST
14
15
16
17
High Side
Gate Driver
(HVIC)
23 U
22 V
HVIC
(High-side Gate Driver)
・Bootstrap diode current
limiting function
・Floating power supply UVLO
21 W
Inverter Part
(PrestoMOS™)
Low Side
Gate Driver
(LVIC)
20 NU
19 NV
・High-speed trr super
junction MOSFET
・Ultra-low VF body diode
18 NW
Protection Circuits UVLO : Under Voltage Lock Out
SCP : Short Circuit Protection TSD : Thermal Shut Down
BM65364S- VA
■ Lineup
Part No.
Power Device
Rating
Recommended switching frequency
BM65364S-VA / -VC
MOSFET
600V / 15A
fc=to20kHz
Power Device 10
Supports SiC power semiconductors and
contributes to increased adoption
High Withstand Voltage IC
Isolated Gate Driver
AC/DC Converter
High-speed operation supports SiC
World’s first* AC/DC converter control ICs for SiC drive
・High-speed operation with a Max. I/O delay time of 150ns
These ICs make it easy to configure an AC/DC converter
・Core-less transformer utilized for 2,500Vrms isolation
with built-in SiC MOSFET that up to now has only been
・Original noise cancelling technology results in high CMR (Common Mode Rejection).
possible using discrete configurations.
・Supporting high VGS/negative voltage power supplies* *BM6101FV-C, BM6104FV-C
The increased proliferation of SiC power devices is expected
・Compact package (6.5×8.1×2.01 mm)
to provide added value to the AC/DC converter market,
which demands increased power savings and miniaturization.
■ Recommended Operating Range (BM6101FV-C)
Symbol
Min.
Max.
Unit
VCC1
4.5
5.5
V
Output Supply Voltage
VCC2
14
24
V
Output VEE Voltage
VEE2
-12
0
V
Operating Temperature Range
Ta
-40
125
SSOP-B20W
°C
■ IPM Operating Waveforms (BM6101FV-C)
IN
g
5V
2μs/div.
Stable operation ensured
up to 800V/400A output
d
IN(10V/div.)
s
18V
and contributes to dramatically
reduced power consumption
allows for greater miniaturization
800V
SiC MOSFET
Gate
Driver
1 Maximizes SiC MOSFET performance
2 Enabling SiC MOSFET drive
<Conditions> ROHM SiC IPM VCC1=5.0 VCC2=18V VEE2=-5V VPN=800V Ta=25°C
P
3 Multiple protection functions enable
V
SiC FET Drain(500V/div.)
SiC SBD
A
Id(500A/div.)
■ Lineup
Features
Rated Output
Negative Power
Isolation Voltage
Current (Peak)
Supply Compatibility
2,500Vrms
BM6102FV-C
3.0A
2,500Vrms
BM6104FV-C
3.0A
2,500Vrms
11 Power Device
Si MOSFET
SiC MOSFET
6% Max.
80
Si MOSFET
75
*Assuming equivalent control IC performance
(ROHM study)
0
10
20
30
40
50
Output Power [W]
60
70
80
■ Lineup
Suppry
Voltage
MOSFET
Control
Method
Maximum
Frequency
(kHz)
FBOLP
BD7682FJ-LB
15.0 to 27.5
External
QR
120
BD7683FJ-LB
15.0 to 27.5
External
QR
BD7684FJ-LB
15.0 to 27.5
External
BD7685FJ-LB
15.0 to 27.5
External
Part No.
3.0A
SiC MOSFET
It is possible to improve 6% of conversion
efficiency by changing to SiC from Si
85
70
high voltage operation up to 690V AC
N
BM6101FV-C
90
SiC FET Gate(20V/div.)
5V
Part No.
AC/DC Converter Efficiency Comparison: Si vs SiC
Features
Power Conversion Efficiency [%]
Parameter
Input Supply Voltage
SOP-J8
* January 2016 ROHM study
I/O
Delay Time
350ns
—
Over current
Detection
DESAT
Mirror Clamp
Function
Soft Turn
OFF Function
Error Status
Output
VCC OVP
Package
Self-restart
Latch
SOP-J8S
120
Latch
Latch
SOP-J8S
QR
120
Self-restart
Self-restart
SOP-J8S
QR
120
Latch
Self-restart
SOP-J8S
Brown Out
200ns
150ns
Power Device 12
Supports SiC power semiconductors and
contributes to increased adoption
High Withstand Voltage IC
Isolated Gate Driver
AC/DC Converter
High-speed operation supports SiC
World’s first* AC/DC converter control ICs for SiC drive
・High-speed operation with a Max. I/O delay time of 150ns
These ICs make it easy to configure an AC/DC converter
・Core-less transformer utilized for 2,500Vrms isolation
with built-in SiC MOSFET that up to now has only been
・Original noise cancelling technology results in high CMR (Common Mode Rejection).
possible using discrete configurations.
・Supporting high VGS/negative voltage power supplies* *BM6101FV-C, BM6104FV-C
The increased proliferation of SiC power devices is expected
・Compact package (6.5×8.1×2.01 mm)
to provide added value to the AC/DC converter market,
which demands increased power savings and miniaturization.
■ Recommended Operating Range (BM6101FV-C)
Symbol
Min.
Max.
Unit
VCC1
4.5
5.5
V
Output Supply Voltage
VCC2
14
24
V
Output VEE Voltage
VEE2
-12
0
V
Operating Temperature Range
Ta
-40
125
SSOP-B20W
°C
■ IPM Operating Waveforms (BM6101FV-C)
IN
g
5V
2μs/div.
Stable operation ensured
up to 800V/400A output
d
IN(10V/div.)
s
18V
and contributes to dramatically
reduced power consumption
allows for greater miniaturization
800V
SiC MOSFET
Gate
Driver
1 Maximizes SiC MOSFET performance
2 Enabling SiC MOSFET drive
<Conditions> ROHM SiC IPM VCC1=5.0 VCC2=18V VEE2=-5V VPN=800V Ta=25°C
P
3 Multiple protection functions enable
V
SiC FET Drain(500V/div.)
SiC SBD
A
Id(500A/div.)
■ Lineup
Features
Rated Output
Negative Power
Isolation Voltage
Current (Peak)
Supply Compatibility
2,500Vrms
BM6102FV-C
3.0A
2,500Vrms
BM6104FV-C
3.0A
2,500Vrms
11 Power Device
Si MOSFET
SiC MOSFET
6% Max.
80
Si MOSFET
75
*Assuming equivalent control IC performance
(ROHM study)
0
10
20
30
40
50
Output Power [W]
60
70
80
■ Lineup
Suppry
Voltage
MOSFET
Control
Method
Maximum
Frequency
(kHz)
FBOLP
BD7682FJ-LB
15.0 to 27.5
External
QR
120
BD7683FJ-LB
15.0 to 27.5
External
QR
BD7684FJ-LB
15.0 to 27.5
External
BD7685FJ-LB
15.0 to 27.5
External
Part No.
3.0A
SiC MOSFET
It is possible to improve 6% of conversion
efficiency by changing to SiC from Si
85
70
high voltage operation up to 690V AC
N
BM6101FV-C
90
SiC FET Gate(20V/div.)
5V
Part No.
AC/DC Converter Efficiency Comparison: Si vs SiC
Features
Power Conversion Efficiency [%]
Parameter
Input Supply Voltage
SOP-J8
* January 2016 ROHM study
I/O
Delay Time
350ns
—
Over current
Detection
DESAT
Mirror Clamp
Function
Soft Turn
OFF Function
Error Status
Output
VCC OVP
Package
Self-restart
Latch
SOP-J8S
120
Latch
Latch
SOP-J8S
QR
120
Self-restart
Self-restart
SOP-J8S
QR
120
Latch
Self-restart
SOP-J8S
Brown Out
200ns
150ns
Power Device 12
Supports high withstand voltage, high surge circuits
High withstand voltage discretes
Super Junction MOSFET
Fast Recovery Diodes
Achieves low noise with low ON resistance
Provides optimized characteristics for each application
・Ideal for PFC (Power Factor Correction) ・Improved characteristics
・Industry-leading A・Ron
TO-220FM
High efficiency / low VF
・Extremely low noise reduces noise countermeasures
and makes it easy to replace planar type products
SOT-428
（DPAK）
TO-252
（DPAK）
LPTS
（D2-PAK）
Low radiation noise
100
Achieves significantly lower noise compared with conventional models
Radiated Emission Comparison(H)(dBμV)
80
60.0
[%]
60
80%
50.0
DOWN
100
1st-Generation AN Series
2nd-Generation EN Series
RFV Series
0
35
Conventional Products
(Planar Type)
1st-Generation
2nd-Generation
AN Series
EN Series
10.0
10
100
MHz
1,000
■ Lineup
Qg (nC)
Package
Part No.
BVDSS (V)
ID (A)
RDS(on) (Ω)
EN Series
KN Series
R6002ENx/☆R6002KNx
600
1.7
2.8
6.5
4.5
TO252☆
TO252
R6004ENx/☆R6004KNx
600
4
0.9
15
10
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6007ENx/☆R6007KNx
600
7
0.57
20
14
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6009ENx/☆R6009KNx
600
9
0.5
23
16
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6011ENx/☆R6011KNx
600
11
0.34
32
22
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6015ENx/☆R6015KNx
600
15
0.26
40
27
LPT/TO220FM/TO3PF
LPT/TO220FM/TO3PF
R6020ENx/☆R6020KNx
600
20
0.17
60
39
LPT/TO220FM/TO3PF/TO247
LPT/TO220FM/TO3PF/TO247
R6024ENx/☆R6024KNx
600
24
0.15
70
47
LPT/TO220FM/TO3PF/TO247
LPT/TO220FM/TO3PF/TO247
R6030ENx/☆R6030KNx
600
30
0.115
85
57
LPT/TO220FM/TO3PF/TO247
R6035ENx/☆R6035KNx
600
35
0.095
110
74
TO3PF/TO247
R6047ENx/☆R6047KNx
600
47
0.07
145
97
TO247
R6076ENx/☆R6076KNx
600
76
0.04
260
174
TO247
EN Series KN Series
16% lower VF
0
500
1,000
1,500
2,000 2,500
VF[mV]
3,000
3,500
RFUH Series
5A
Tj=25°C
Tj=25°C
50ns
4,000 4,500
Absolute Maximum Ratings(Ta=25°C)
Electrical Characteristics(Tj=25°C)
VR(V)
IO(A)
VF(V)Max.
IF(A)
trr(ns)Max.
RFNL5BM6S
600
5
1.3
5
60
RFNL5TJ6S
600
5
1.3
5
60
8
10
65
RFNL10TJ6S
600
10
1.25
1.3
RFNL15TJ6S
600
15
1.3
15
65
RFNL20TJ6S
600
20
1.3
20
70
Equivalent Circuit Diagram
Package
TO-252(DPAK)
TO-220ACFP
■ RFV Series Ultra-fast trr hard recovery type
Part No.
Absolute Maximum Ratings(Ta=25°C)
Electrical Characteristics(Tj=25°C)
VR(V)
IO(A)
VF(V)Max.
IF(A)
trr(ns)Max.
RFVS8TJ6S
600
8
3.0
8
20
RFV8TJ6S
600
8
2.8
8
25
RFV12TJ6S
600
12
2.8
12
25
LPT/TO220FM/TO3PF/TO247
RFV15TJ6S
600
15
2.8
15
30
TO3PF/TO247
RFVS8TG6S
600
8
3.0
8
20
TO247
RFV8TG6S
600
8
2.8
8
25
TO247
RFV12TG6S
600
12
2.8
12
25
RFV15TG6S
600
15
2.8
15
30
The last (8th) character represents the package type D : CPT3(D-Pak), J : LPT(D2-Pak), X : TO220FM, Z : TO3PF, Z1 : TO247, D3 : TO252, D3 : TO252 EN:Low noise type, KN:Fast switching type
☆ : Under Development
13 Power Device
40%
than RFN Series
Part No.
20.0
20
by
RFV Series
RFNL Series is
RFN Series
30.0
20
Reverse recovery
time reduced
■ RFNL Series Ultra-low VF type
40.0
40
RFUH Series
RFUH Series
1
0.01
New processes utilized to achieve ultra-high-speed trr
Current
Conventional Product (Planar Type)
The proprietary structure suppresses
noise – a drawback of SJ MOSFETs
to achieve lower noise than even
planar types.
High-speed trr characteristics
RFNL Series
0.1
70.0
TO-252（DPAK）
TO-220AC
VF - IF CHARACTERISTICS
100
IF[A]
*40% lower compared with the
1st-generation AN Series
65%
DOWN
Lower VF contributes to greater energy savings
10
■ Towards lower ON resistance and low noise
ON-resistance significantly reduced
TO-220ACFP
High-speed trr models
TO-247
TO-3PF
・Broad package lineup, from DPAK to TO-247
Higher efficiency
・Ultra-low VF units /
・Broad lineup
(40% lower than conventional products)
・Lineup includes low noise types and fast switching types
Equivalent Circuit Diagram
Package
TO-220ACFP
TO-220AC
Power Device 14
Supports high withstand voltage, high surge circuits
High withstand voltage discretes
Super Junction MOSFET
Fast Recovery Diodes
Achieves low noise with low ON resistance
Provides optimized characteristics for each application
・Ideal for PFC (Power Factor Correction) ・Improved characteristics
・Industry-leading A・Ron
TO-220FM
High efficiency / low VF
・Extremely low noise reduces noise countermeasures
and makes it easy to replace planar type products
SOT-428
（DPAK）
TO-252
（DPAK）
LPTS
（D2-PAK）
Low radiation noise
100
Achieves significantly lower noise compared with conventional models
Radiated Emission Comparison(H)(dBμV)
80
60.0
[%]
60
80%
50.0
DOWN
100
1st-Generation AN Series
2nd-Generation EN Series
RFV Series
0
35
Conventional Products
(Planar Type)
1st-Generation
2nd-Generation
AN Series
EN Series
10.0
10
100
MHz
1,000
■ Lineup
Qg (nC)
Package
Part No.
BVDSS (V)
ID (A)
RDS(on) (Ω)
EN Series
KN Series
R6002ENx/☆R6002KNx
600
1.7
2.8
6.5
4.5
TO252☆
TO252
R6004ENx/☆R6004KNx
600
4
0.9
15
10
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6007ENx/☆R6007KNx
600
7
0.57
20
14
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6009ENx/☆R6009KNx
600
9
0.5
23
16
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6011ENx/☆R6011KNx
600
11
0.34
32
22
TO252☆/LPT/TO220FM
TO252/LPT/TO220FM
R6015ENx/☆R6015KNx
600
15
0.26
40
27
LPT/TO220FM/TO3PF
LPT/TO220FM/TO3PF
R6020ENx/☆R6020KNx
600
20
0.17
60
39
LPT/TO220FM/TO3PF/TO247
LPT/TO220FM/TO3PF/TO247
R6024ENx/☆R6024KNx
600
24
0.15
70
47
LPT/TO220FM/TO3PF/TO247
LPT/TO220FM/TO3PF/TO247
R6030ENx/☆R6030KNx
600
30
0.115
85
57
LPT/TO220FM/TO3PF/TO247
R6035ENx/☆R6035KNx
600
35
0.095
110
74
TO3PF/TO247
R6047ENx/☆R6047KNx
600
47
0.07
145
97
TO247
R6076ENx/☆R6076KNx
600
76
0.04
260
174
TO247
EN Series KN Series
16% lower VF
0
500
1,000
1,500
2,000 2,500
VF[mV]
3,000
3,500
RFUH Series
5A
Tj=25°C
Tj=25°C
50ns
4,000 4,500
Absolute Maximum Ratings(Ta=25°C)
Electrical Characteristics(Tj=25°C)
VR(V)
IO(A)
VF(V)Max.
IF(A)
trr(ns)Max.
RFNL5BM6S
600
5
1.3
5
60
RFNL5TJ6S
600
5
1.3
5
60
8
10
65
RFNL10TJ6S
600
10
1.25
1.3
RFNL15TJ6S
600
15
1.3
15
65
RFNL20TJ6S
600
20
1.3
20
70
Equivalent Circuit Diagram
Package
TO-252(DPAK)
TO-220ACFP
■ RFV Series Ultra-fast trr hard recovery type
Part No.
Absolute Maximum Ratings(Ta=25°C)
Electrical Characteristics(Tj=25°C)
VR(V)
IO(A)
VF(V)Max.
IF(A)
trr(ns)Max.
RFVS8TJ6S
600
8
3.0
8
20
RFV8TJ6S
600
8
2.8
8
25
RFV12TJ6S
600
12
2.8
12
25
LPT/TO220FM/TO3PF/TO247
RFV15TJ6S
600
15
2.8
15
30
TO3PF/TO247
RFVS8TG6S
600
8
3.0
8
20
TO247
RFV8TG6S
600
8
2.8
8
25
TO247
RFV12TG6S
600
12
2.8
12
25
RFV15TG6S
600
15
2.8
15
30
The last (8th) character represents the package type D : CPT3(D-Pak), J : LPT(D2-Pak), X : TO220FM, Z : TO3PF, Z1 : TO247, D3 : TO252, D3 : TO252 EN:Low noise type, KN:Fast switching type
☆ : Under Development
13 Power Device
40%
than RFN Series
Part No.
20.0
20
by
RFV Series
RFNL Series is
RFN Series
30.0
20
Reverse recovery
time reduced
■ RFNL Series Ultra-low VF type
40.0
40
RFUH Series
RFUH Series
1
0.01
New processes utilized to achieve ultra-high-speed trr
Current
Conventional Product (Planar Type)
The proprietary structure suppresses
noise – a drawback of SJ MOSFETs
to achieve lower noise than even
planar types.
High-speed trr characteristics
RFNL Series
0.1
70.0
TO-252（DPAK）
TO-220AC
VF - IF CHARACTERISTICS
100
IF[A]
*40% lower compared with the
1st-generation AN Series
65%
DOWN
Lower VF contributes to greater energy savings
10
■ Towards lower ON resistance and low noise
ON-resistance significantly reduced
TO-220ACFP
High-speed trr models
TO-247
TO-3PF
・Broad package lineup, from DPAK to TO-247
Higher efficiency
・Ultra-low VF units /
・Broad lineup
(40% lower than conventional products)
・Lineup includes low noise types and fast switching types
Equivalent Circuit Diagram
Package
TO-220ACFP
TO-220AC
Power Device 14
Contributes to greater efficiency and energy savings
in a variety of high voltage, large current applications
IGBT (Insulated Gate Bipolar Transistor)
Field Stop Trench IGBT
Ignition IGBT
ROHM utilizes original trench gate and thin wafer technologies
High reliability products optimized for automotive ignition
to achieve low VCE (sat) and reduced switching loss.
applications featuring both low VCE (sat) and high avalanche
TO-252
(D-PAK)
tolerance.
Features
TO-252
(D-PAK)
1 Low VCE (sat) & switching loss
TO-263
(D2-PAK)
■ Internal Circuit Diagram
Features
2 A broad lineup is offered, making it
Ex. Automotive Ignition Coil Drive
possible to select the ideal solution
based on set requirements
1 Class-leading efficiency achieved through
Boost coil
an optimized tradeoff between VCE(sat)
and avalanche tolerance.
3 Automotive-grade (AEC-Q101 qualified)
TO-247N
RGS Series (Under development)
TO-3PFM
Battery
2 Built-in Gate protection diode
Spark plug
3 Gate resistance/Gate-emitter resistance
(optional)
■ Application & Lineup
Standard
SCSOA (tsc 5μs min)
RGT series
—
Low VCE (sat) Series
RGCL series
—
High speed switching type
RGTH series
—
SCSOA (tsc 8μs min)
☆RGS series
☆Under development
AEC-Q101
VCE
(sat)
(Recommend)
Lineup
—
(Recommend)
5μs
650V
4 to 50A@100°C
—
—
600V
18 to 40A@100°C
—
650V
20 to 50A@100°C
(Recommend)
8μs
650V
30 to 50A@100°C
—
IGBT
4 AEC-Q101 qualified
SC
SOA
Switching performance
Ignition timing signal
ECU
■ Lineup
RGPZ10BM40FH
RGPR10BM40FH
☆RGPZ20BM56FH
VCES
430 ± 30
430 ± 30
560 ± 30
VGE
±10
±10
±10
Collector Current (A)
IC
20
20
20
Junction Temperature (°C)
Tj
175
175
175
Eas
250
250
300
Collector-Emitter Voltage (V)
Gate-Emitter Voltage (V)
Avalanche Energy (Single Pulse) (mJ)
Collector
Collector
Internal Circuit
Gate
Gate
Emitter
Collector
Gate
Emitter
Emitter
☆Under development
15 Power Device
Power Device 16
Contributes to greater efficiency and energy savings
in a variety of high voltage, large current applications
IGBT (Insulated Gate Bipolar Transistor)
Field Stop Trench IGBT
Ignition IGBT
ROHM utilizes original trench gate and thin wafer technologies
High reliability products optimized for automotive ignition
to achieve low VCE (sat) and reduced switching loss.
applications featuring both low VCE (sat) and high avalanche
TO-252
(D-PAK)
tolerance.
Features
TO-252
(D-PAK)
1 Low VCE (sat) & switching loss
TO-263
(D2-PAK)
■ Internal Circuit Diagram
Features
2 A broad lineup is offered, making it
Ex. Automotive Ignition Coil Drive
possible to select the ideal solution
based on set requirements
1 Class-leading efficiency achieved through
Boost coil
an optimized tradeoff between VCE(sat)
and avalanche tolerance.
3 Automotive-grade (AEC-Q101 qualified)
TO-247N
RGS Series (Under development)
TO-3PFM
Battery
2 Built-in Gate protection diode
Spark plug
3 Gate resistance/Gate-emitter resistance
(optional)
■ Application & Lineup
Standard
SCSOA (tsc 5μs min)
RGT series
—
Low VCE (sat) Series
RGCL series
—
High speed switching type
RGTH series
—
SCSOA (tsc 8μs min)
☆RGS series
☆Under development
AEC-Q101
VCE
(sat)
(Recommend)
Lineup
—
(Recommend)
5μs
650V
4 to 50A@100°C
—
—
600V
18 to 40A@100°C
—
650V
20 to 50A@100°C
(Recommend)
8μs
650V
30 to 50A@100°C
—
IGBT
4 AEC-Q101 qualified
SC
SOA
Switching performance
Ignition timing signal
ECU
■ Lineup
RGPZ10BM40FH
RGPR10BM40FH
☆RGPZ20BM56FH
VCES
430 ± 30
430 ± 30
560 ± 30
VGE
±10
±10
±10
Collector Current (A)
IC
20
20
20
Junction Temperature (°C)
Tj
175
175
175
Eas
250
250
300
Collector-Emitter Voltage (V)
Gate-Emitter Voltage (V)
Avalanche Energy (Single Pulse) (mJ)
Collector
Collector
Internal Circuit
Gate
Gate
Emitter
Collector
Gate
Emitter
Emitter
☆Under development
15 Power Device
Power Device 16
A vertically integrated production system
ensures high quality and stable supply
Nürnberg
SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe,
became a member of the ROHM Group in 2009.
SiCrystal was established in 1997 in Germany based on a SiC
A ‘Quality First’ objective allows ROHM to establish a vertically integrated manufacturing system
monocrystal growth technology development project launched in 1994.
for SiC production. In addition to acquiring SiCrystal, a German wafer fabrication company in
Mass production and supply of SiC wafers began in 2001.
2009, the ROHM Group continues to implement activities to improve quality throughout the
In 2012, SiCrystal relocated to a new plant in Nüremberg to increase production capacity.
entire manufacturing process, from wafers to packages. World-class manufacturing
With the corporate philosophy "Stable Quality", SiCrystal has adopted
technologies and stable production capacity provide increased cost competitiveness and
an integrated wafer production system from raw SiC material to crystal growth,
ensures a stable, long-term supply of new products.
State-of-the-art package
ROHM provides the latest assembling
technologies such as CSP, BGA, COF
and stacked package
wafer processing, and inspection, and in 1999 was granted ISO9001 certification.
■ Manufactured Product: SiC Wafers
In-house manufactured dies and lead frames
In-house production system
To enhance quality,
ROHM manufactures
ROHM utilizes an integrated production
system developed completely in-house
dies to punch lead
frames and molding dies
to precisely meet customer needs.
All production equipment are developed in-house
3inch
2inch
within the company.
150mm
(6inch)
100mm
(4inch)
Acquired ISO9001 Certification
■ SiC Wafer Production
Stringent material requirements
Advanced Crystallization Technology
Complete wafer
production, from
silicon ingot pulling
Packaging
Silicon ore
Assembly Line
CAD
Frame & Dies
Photo Mask
Insulating Material
Low inductance moduleA
Seed Crystal
A low inductance module utilizing SiC’s
high-speed characteristics was developed
Silicon Ingot
Wafer Process
SiC
Powder
In-house production equipment
Silicon
Si
SiC ingots are produced via a crystal growth process utilizing a sublimation method called "Rayleigh's method" that sublimates SiC powder and
recrystallizes it under cold temperatures. Compared with conventional Si ingots which are crystalized in the liquid phase from Si melt, the growth
rate using the sublimation method is slow, making crystal defects likely to occur, and therefore requires precision technology for crystal control.
SiCrystal utilizes advanced crystallization technology to produce stable quality wafers.
Wafer
Silicon
carbide
SiC
Water-Cooled
Coils
Crucible
For SiC:
For Si:
Temperature: 2,000 to 2,400°C
Temperature: 1,230 to 1,260°C
Principle: Transports sublimated gas to the
surface of the seed crystal by a heat gradient
in order to recrystallize it. Crystal control is
difficult and the growth rate is slow compared
with liquid phase growth.
Principle: Liquid-phase growth during which
Si melt is solidified on the seed crystal. This
method is characterized by fast crystal
growth.
High quality, high volume, and stable
manufacturing are guaranteed utilizing
in-house production equipment.
In-house manufactured photomask
Engineers who know well of devices and
processes are in charge of quality control
covering from chip design layout to
photomask manufacturing consistently
to pursue the highest quality products.
SiC processes
High quality lines integrating SiC’s
unique processes are utilized
1. Crystal growth
2. External polishing
3. Flat formation
4. Slicing
5. Sanding / Edge polishing / Cleaning
SiC Wafer
SiCrystal is a German SiC single
crystal wafer manufacturer who joined
the ROHM Group in 2009.
17 Power Device
Power Device 18
A vertically integrated production system
ensures high quality and stable supply
Nürnberg
SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe,
became a member of the ROHM Group in 2009.
SiCrystal was established in 1997 in Germany based on a SiC
A ‘Quality First’ objective allows ROHM to establish a vertically integrated manufacturing system
monocrystal growth technology development project launched in 1994.
for SiC production. In addition to acquiring SiCrystal, a German wafer fabrication company in
Mass production and supply of SiC wafers began in 2001.
2009, the ROHM Group continues to implement activities to improve quality throughout the
In 2012, SiCrystal relocated to a new plant in Nüremberg to increase production capacity.
entire manufacturing process, from wafers to packages. World-class manufacturing
With the corporate philosophy "Stable Quality", SiCrystal has adopted
technologies and stable production capacity provide increased cost competitiveness and
an integrated wafer production system from raw SiC material to crystal growth,
ensures a stable, long-term supply of new products.
State-of-the-art package
ROHM provides the latest assembling
technologies such as CSP, BGA, COF
and stacked package
wafer processing, and inspection, and in 1999 was granted ISO9001 certification.
■ Manufactured Product: SiC Wafers
In-house manufactured dies and lead frames
In-house production system
To enhance quality,
ROHM manufactures
ROHM utilizes an integrated production
system developed completely in-house
dies to punch lead
frames and molding dies
to precisely meet customer needs.
All production equipment are developed in-house
3inch
2inch
within the company.
150mm
(6inch)
100mm
(4inch)
Acquired ISO9001 Certification
■ SiC Wafer Production
Stringent material requirements
Advanced Crystallization Technology
Complete wafer
production, from
silicon ingot pulling
Packaging
Silicon ore
Assembly Line
CAD
Frame & Dies
Photo Mask
Insulating Material
Low inductance moduleA
Seed Crystal
A low inductance module utilizing SiC’s
high-speed characteristics was developed
Silicon Ingot
Wafer Process
SiC
Powder
In-house production equipment
Silicon
Si
SiC ingots are produced via a crystal growth process utilizing a sublimation method called "Rayleigh's method" that sublimates SiC powder and
recrystallizes it under cold temperatures. Compared with conventional Si ingots which are crystalized in the liquid phase from Si melt, the growth
rate using the sublimation method is slow, making crystal defects likely to occur, and therefore requires precision technology for crystal control.
SiCrystal utilizes advanced crystallization technology to produce stable quality wafers.
Wafer
Silicon
carbide
SiC
Water-Cooled
Coils
Crucible
For SiC:
For Si:
Temperature: 2,000 to 2,400°C
Temperature: 1,230 to 1,260°C
Principle: Transports sublimated gas to the
surface of the seed crystal by a heat gradient
in order to recrystallize it. Crystal control is
difficult and the growth rate is slow compared
with liquid phase growth.
Principle: Liquid-phase growth during which
Si melt is solidified on the seed crystal. This
method is characterized by fast crystal
growth.
High quality, high volume, and stable
manufacturing are guaranteed utilizing
in-house production equipment.
In-house manufactured photomask
Engineers who know well of devices and
processes are in charge of quality control
covering from chip design layout to
photomask manufacturing consistently
to pursue the highest quality products.
SiC processes
High quality lines integrating SiC’s
unique processes are utilized
1. Crystal growth
2. External polishing
3. Flat formation
4. Slicing
5. Sanding / Edge polishing / Cleaning
SiC Wafer
SiCrystal is a German SiC single
crystal wafer manufacturer who joined
the ROHM Group in 2009.
17 Power Device
Power Device 18
Research & Development
High-temperature (Tj=225°C) packaging technology for transfer-molded modules
ROHM has developed high-temperature SiC power modules for inverter driving in
automotive systems and industrial devices. These transfer-molded modules are the
first in the world that demonstrated the high temperature operation at 225°C. This
enables the compact, low-cost packaging as commonly used in Si device modules,
encouraging widely use of SiC module. Modules type is “Full Bridge” featuring
1,200V/300A with 225°C operation.
■ Future solutions for high temperature operation
Gate drivers using SOI wafers are
currently under development. They are
expected to achieve higher speeds
with lower power consumption.
SiC with high temperature operation
Operation at high temperatures
above 200°C has been verified.
Reliability evaluation is ongoing.
High-temperature,
high-voltage IPM.
(Intelligent Power Module)
ROHM’s high-temperature,
High- temperature packaging technology.
ROHM’s original technology is
introduced to the high-temperature
packaging for SiC devices.
State-of-the-art industry-academia R&D collaboration
New
TOPICS
ROHM is actively involved in partnerships with major universities in a variety of fields in order to
share expertise, cultivate new technologies, and collaborate on breakthrough R&D.
Development of mass-produced
SiC epitaxialgrowth equipmentIn
Kyot o Un ivers ity × Toky o Electron × ROH M
High performance SiC MOSFET with
High-k gate is currently under development
Osaka University × Kyoto University × Tokyo Electron × ROHM
3-institution technological collaboration
enables rapid development of
high-quality SiC devices
Characteristics improvement based on
new materials, 1.5 times the breakdown
voltage, 90% lower leakage current
In 2007 ROHM, along with Kyoto University
Developed the industry’s first
and Tokyo Electron, developed mass
SiC Trench MOSFET utilizing
production SiC epitaxial growth equipment
an aluminum oxynitride (AION)
that can process multiple SiC wafers in a
layer on the gate insulating
single operation. Fast development was
film. The result is 1.5x the
made possible by efficiently sharing
breakdown voltage and 90%
technologies. These new equipment are
lower leakage current vs.
currently used for mass producing ROHM
conventional thermally oxidized
SiC devices.
films (SiO2). These properties
devices are inside with advanced
high-temperature packaging
Searching of new application
using SiC power devices
- High-voltage switching
module for pulse generators
Introduction of SiC devices to high-voltage switching module for pulse generators
4 times faster in
operation speed, 10 times
larger in rating current,
over 100 times higher
in operation frequency
applications using SiC devices in order to widely
spread SiC products in the society. As a part of
Company
these activities, high-voltage switching modules
with SiC devices for pulse generators are proposed.
32kV rating switch modules
(Voltage level can be adjusted depending on
the number of modules connected in series.)
compared to the conventional
switching modules
By applying SiC MOSFETs with high voltage, large
current and high-speed response, dramatically
Tokyo Electron
improvement is expected in pulse generators and
end products such as medical-purpose acceleration
Osaka University
technology.
ROHM emphasizes search and introduction of new
High performance SiC
MOSFET is currently
under development
Kyoto University
University
hold promise for higher
high-breakdown-voltage SiC
Compact High temperature High power High efficiency
High temperature SiC gate drivers
systems in radiotherapy equipment. In September
2014, “Fukushima SiC Applied Engineering Inc.” was
Various effects are expected for end products as follows;
・Downsizing of medical-purpose accelerators
・Decreasing radiation exposure in X-ray CT
・Reducing process time in plasma generators
established to manufacturer and sell these SiC
electronics products. ROHM joined the incorporation
as a business partner to promote new market
Establishment of a joint venture for manufacturing and
sales of SiC electronics products
development.
ROHM
reliability and lower loss.
19 Power Device
Power Device 20
Research & Development
High-temperature (Tj=225°C) packaging technology for transfer-molded modules
ROHM has developed high-temperature SiC power modules for inverter driving in
automotive systems and industrial devices. These transfer-molded modules are the
first in the world that demonstrated the high temperature operation at 225°C. This
enables the compact, low-cost packaging as commonly used in Si device modules,
encouraging widely use of SiC module. Modules type is “Full Bridge” featuring
1,200V/300A with 225°C operation.
■ Future solutions for high temperature operation
Gate drivers using SOI wafers are
currently under development. They are
expected to achieve higher speeds
with lower power consumption.
SiC with high temperature operation
Operation at high temperatures
above 200°C has been verified.
Reliability evaluation is ongoing.
High-temperature,
high-voltage IPM.
(Intelligent Power Module)
ROHM’s high-temperature,
High- temperature packaging technology.
ROHM’s original technology is
introduced to the high-temperature
packaging for SiC devices.
State-of-the-art industry-academia R&D collaboration
New
TOPICS
ROHM is actively involved in partnerships with major universities in a variety of fields in order to
share expertise, cultivate new technologies, and collaborate on breakthrough R&D.
Development of mass-produced
SiC epitaxialgrowth equipmentIn
Kyot o Un ivers ity × Toky o Electron × ROH M
High performance SiC MOSFET with
High-k gate is currently under development
Osaka University × Kyoto University × Tokyo Electron × ROHM
3-institution technological collaboration
enables rapid development of
high-quality SiC devices
Characteristics improvement based on
new materials, 1.5 times the breakdown
voltage, 90% lower leakage current
In 2007 ROHM, along with Kyoto University
Developed the industry’s first
and Tokyo Electron, developed mass
SiC Trench MOSFET utilizing
production SiC epitaxial growth equipment
an aluminum oxynitride (AION)
that can process multiple SiC wafers in a
layer on the gate insulating
single operation. Fast development was
film. The result is 1.5x the
made possible by efficiently sharing
breakdown voltage and 90%
technologies. These new equipment are
lower leakage current vs.
currently used for mass producing ROHM
conventional thermally oxidized
SiC devices.
films (SiO2). These properties
devices are inside with advanced
high-temperature packaging
Searching of new application
using SiC power devices
- High-voltage switching
module for pulse generators
Introduction of SiC devices to high-voltage switching module for pulse generators
4 times faster in
operation speed, 10 times
larger in rating current,
over 100 times higher
in operation frequency
applications using SiC devices in order to widely
spread SiC products in the society. As a part of
Company
these activities, high-voltage switching modules
with SiC devices for pulse generators are proposed.
32kV rating switch modules
(Voltage level can be adjusted depending on
the number of modules connected in series.)
compared to the conventional
switching modules
By applying SiC MOSFETs with high voltage, large
current and high-speed response, dramatically
Tokyo Electron
improvement is expected in pulse generators and
end products such as medical-purpose acceleration
Osaka University
technology.
ROHM emphasizes search and introduction of new
High performance SiC
MOSFET is currently
under development
Kyoto University
University
hold promise for higher
high-breakdown-voltage SiC
Compact High temperature High power High efficiency
High temperature SiC gate drivers
systems in radiotherapy equipment. In September
2014, “Fukushima SiC Applied Engineering Inc.” was
Various effects are expected for end products as follows;
・Downsizing of medical-purpose accelerators
・Decreasing radiation exposure in X-ray CT
・Reducing process time in plasma generators
established to manufacturer and sell these SiC
electronics products. ROHM joined the incorporation
as a business partner to promote new market
Establishment of a joint venture for manufacturing and
sales of SiC electronics products
development.
ROHM
reliability and lower loss.
19 Power Device
Power Device 20
Focusing on cutting-edge SiC technology and
leading the industry through innovative R&D
ROHM has been focused on developing SiC for use as a material for next-generation power devices for years,
collaborating with universities and end-users in order to cultivate technological know-how and expertise. This
culminated in Japan's first mass-produced Schottky barrier diodes in April 2010 and the industry’s first commercially
available SiC transistors (MOSFET) in December. And in March 2012 ROHM unveiled the industry's first mass
production of Full SiC Power Modules.
History
SiC Technology Breakthrough
Max Temp = 250.8℃
80% Duty Cycle
20% Duty Cycle
❷
❶
2002
Begin preliminary experiments
with SiC MOSFETs
(Jun 2002)
Develop SiC MOSFET
prototypes
(Dec 2004)
2005
2007
2008
Ship SiC MOSFET samples
(Nov 2005)
ROHM, along with Kyoto
University and Tokyo Electron,
announce the development of
SiC epi film mass-production
technology
(Jun 2007)
Develop a new type of SiC
diode with Nissan Motors
(Apr 2008)
Announce the development of SiC
MOSFETs with the industry’s
smallest ON-resistance(3.1mΩcm²)
(Mar 2006)
Trial manufacture of large
current (300A) SiC MOSFETs
and SBDs (Schottky Barrier
Diodes)
(Dec 2007)
Release trench-type MOSFETs
featuring the industry’s smallest
ON-resistance: 1.7mΩcm²
(Sep 2008)
Nissan Motors conducts a driving
experiment of a fuel-cell vehicle
equipped with an inverter using
ROHM's SiC diode
(Sep 2008)
2009
Honda R&D Co., Ltd. and
ROHM test prototype SiC
power modules for hybrid
vehicles ❶
(Sep 2008)
ROHM tests prototype high
temperature operation power
modules that utilize SiC
elements and introduces a
demo capable of operation at
250 ºC ❷
(Oct 2008)
The ROHM Group acquires
SiCrystal, an SiC wafer
manufacturer ❸
(Jul 2009)
Develop the industry’s
first high current low
resistance SiC trench
MOSFET
(Oct 2009)
SiC is ECO
Device
Reducing environmental load
SiC power devices deliver superior energy savings.
ROHM is expanding its lineup of SiC power devices
with innovative new products that minimize power
consumption in order to reduce greenhouse gas
emissions and lessen environmental impact.
❸
2010
Establish an integrated SiC
device production system.
Begin mass production of
SiC SBDs ❹
(Apr 2010)
Successfully develop the
industry's first SiC power
modules containing trench
MOSFETs and SBDs that
can be integrated into
motors
(Oct 2010)
Begin mass production
of SiC MOSFETs
(Dec 2010)
21 Power Device
❺
❹
❻
2011
2012
2013
2015
Develop the industry's first
transfer mold SiC power modules
capable of high temperature
operation (up to 225°C) ❺
(Oct 2011)
Launch the industry's first
mass production of ''Full SiC''
power modules with SiC
SBDs and SiC MOSFETs ❻
(Mar 2012)
Mass-produced SiC-MOSFET
using the trench structure first
in the world.
Released “Full SiC” power
module products
(In June 2015)
APEI Inc. (Arkansas Power
Electronics International) and
ROHM develop high-speed,
high-current (1000A-class)
SiC trench MOS modules
(Oct 2011)
Begin mass production
of SiC MOS Module
(Dec 2012)History
Performed a trial production
of uninterruptible power
supply equipment using full
SiC power modules in
cooperation with Enegate
and Kansai Electric Power
(In June 2013)
Started mass production of
automotive SiC SBD products
(In September 2012)
Power Device 22
Focusing on cutting-edge SiC technology and
leading the industry through innovative R&D
ROHM has been focused on developing SiC for use as a material for next-generation power devices for years,
collaborating with universities and end-users in order to cultivate technological know-how and expertise. This
culminated in Japan's first mass-produced Schottky barrier diodes in April 2010 and the industry’s first commercially
available SiC transistors (MOSFET) in December. And in March 2012 ROHM unveiled the industry's first mass
production of Full SiC Power Modules.
History
SiC Technology Breakthrough
Max Temp = 250.8℃
80% Duty Cycle
20% Duty Cycle
❷
❶
2002
Begin preliminary experiments
with SiC MOSFETs
(Jun 2002)
Develop SiC MOSFET
prototypes
(Dec 2004)
2005
2007
2008
Ship SiC MOSFET samples
(Nov 2005)
ROHM, along with Kyoto
University and Tokyo Electron,
announce the development of
SiC epi film mass-production
technology
(Jun 2007)
Develop a new type of SiC
diode with Nissan Motors
(Apr 2008)
Announce the development of SiC
MOSFETs with the industry’s
smallest ON-resistance(3.1mΩcm²)
(Mar 2006)
Trial manufacture of large
current (300A) SiC MOSFETs
and SBDs (Schottky Barrier
Diodes)
(Dec 2007)
Release trench-type MOSFETs
featuring the industry’s smallest
ON-resistance: 1.7mΩcm²
(Sep 2008)
Nissan Motors conducts a driving
experiment of a fuel-cell vehicle
equipped with an inverter using
ROHM's SiC diode
(Sep 2008)
2009
Honda R&D Co., Ltd. and
ROHM test prototype SiC
power modules for hybrid
vehicles ❶
(Sep 2008)
ROHM tests prototype high
temperature operation power
modules that utilize SiC
elements and introduces a
demo capable of operation at
250 ºC ❷
(Oct 2008)
The ROHM Group acquires
SiCrystal, an SiC wafer
manufacturer ❸
(Jul 2009)
Develop the industry’s
first high current low
resistance SiC trench
MOSFET
(Oct 2009)
SiC is ECO
Device
Reducing environmental load
SiC power devices deliver superior energy savings.
ROHM is expanding its lineup of SiC power devices
with innovative new products that minimize power
consumption in order to reduce greenhouse gas
emissions and lessen environmental impact.
❸
2010
Establish an integrated SiC
device production system.
Begin mass production of
SiC SBDs ❹
(Apr 2010)
Successfully develop the
industry's first SiC power
modules containing trench
MOSFETs and SBDs that
can be integrated into
motors
(Oct 2010)
Begin mass production
of SiC MOSFETs
(Dec 2010)
21 Power Device
❺
❹
❻
2011
2012
2013
2015
Develop the industry's first
transfer mold SiC power modules
capable of high temperature
operation (up to 225°C) ❺
(Oct 2011)
Launch the industry's first
mass production of ''Full SiC''
power modules with SiC
SBDs and SiC MOSFETs ❻
(Mar 2012)
Mass-produced SiC-MOSFET
using the trench structure first
in the world.
Released “Full SiC” power
module products
(In June 2015)
APEI Inc. (Arkansas Power
Electronics International) and
ROHM develop high-speed,
high-current (1000A-class)
SiC trench MOS modules
(Oct 2011)
Begin mass production
of SiC MOS Module
(Dec 2012)History
Performed a trial production
of uninterruptible power
supply equipment using full
SiC power modules in
cooperation with Enegate
and Kansai Electric Power
(In June 2013)
Started mass production of
automotive SiC SBD products
(In September 2012)
Power Device 22
April 1st, 2016
No.58P6934E-A 04.2016
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