NTE2914 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220FM Type Package Features: D Low On−Resistance: RDS = 0.026W Typ. D High Speed Switching D 4V Gate Drive Device can be Driven from 5V Source Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−to−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Drain Current (Note 1), ID(pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Body−Drain Diode Reverse Drain Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Avalanche Current (Note 2), IAP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34mJ Channel Dissipation (TC = +255C), PCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Channel Temperature, TCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Note 1. Pulse width 3 10ms; duty cycle 3 1%. Note 2. TCH = +255C, Rg = 50W Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Drain−to−Source Breakdown Voltage V(BR)DSS Gate−to−Source Breakdown Voltage V(BR)GSS Test Conditions Min Typ Max Unit VGS = 0V, ID = 10mA 60 − − V VDS = 0V, IG = +100mA +20 − − V Gate−Source Leakage Current IGSS VGS = +16V, VDS = 0 − − +10 mA Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V − − 10 mA Gate−to−Source Cutoff Voltage VGS(off) VDS = 10V, ID = 1mA 1.5 − 2.5 V Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 15A, Note 3 − 0.026 0.034 W VGS = 4V, ID = 15A, Note 3 − 0.045 0.070 W Note 3. Pulse Test. Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Transfer Admittance |yfs| VDS = 10V, ID = 15A, Note 3 11 17 − S Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz − 740 − pF Output Capacitance Coss − 380 − pF Reverse Transfer Capacitance Crss − 140 − pF Turn−On Delay Time td(on) − 10 − ns tr − 160 − ns td(off) − 100 − ns tf − 150 − ns Rise Time Turn−Off Delay Time Fall Time Body−Drain Diode Forward Voltage Body−Drain Diode Reverse Recovery Time VGS = 10V, ID = 15A, RL = 2W VDF VGS = 0, IF = 25A − 0.95 − V trr VGS = 0, IF = 25A, diF/dt = 50Ams − 40 − ns Note 3. Pulse Test. D G S .394 (10.0) .276 (7.0) .177 (4.5) .110 (2.8) .126 (3.2) Dia. .669 (17.0) .472 (12.0) G D S .532 (13.5) Min .100 (2.54) .098 (2.5)