00520

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Make changes to IOUT, IF, VIN as specified in paragraph 1.4, table IIA, PRR as
specified in figure 3, and paragraph 4.1. - ro
00-08-01
R. MONNIN
B
Drawing updated to reflect current requirements. - gt
02-04-30
R. MONNIN
C
Add a new footnote under paragraph 1.5 and Table I. - ro
05-06-15
R. MONNIN
D
Under paragraph 1.3, footnote 4/, delete 200 mA and replace with 300 mA.
Delete Accelerated aging test. - ro
07-03-27
R. HEBER
E
Under paragraph 1.3, thermal resistance, junction-to-case limit, delete 16C/W
and substitute 8C/W. - ro
10-07-07
C. SAFFLE
F
Add device type 02. Make changes to paragraph 1.5 and add footnote 8/.
Make changes to footnotes 1/ and 2/ as specified under table I. Make changes
to paragraphs 3.2.5 and 4.4.4.2. Delete figure 4 radiation exposure circuit,
paragraph 4.4.4.3 dose rate induced latchup testing, and device class M
references. - ro
13-07-02
C. SAFFLE
G
Under Table I, Collector-emitter saturation voltage (VCESAT) test, change the
subgroup 3 limit from 2.0 V to 2.2 V. - ro
14-10-02
C. SAFFLE
REV
SHEET
REV
G
G
G
SHEET
15
16
17
REV STATUS
REV
G
G
G
G
G
G
G
G
G
G
G
G
G
G
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
RAYMOND MONNIN
DRAWING APPROVAL DATE
00-06-20
REVISION LEVEL
G
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION
HARDENED, 8-CHANNEL SOURCE DRIVER,
MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-00520
1 OF 17
5962-E506-14
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space
application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and
lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation
Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
00520
RHA
designator
(see 1.2.1)
01
T
V
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
Circuit function
IS-2981RH
IS-2981EH
Radiation hardened, 8-channel source driver
Radiation hardened, 8-channel source driver
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q, V
Certification and qualification to MIL-PRF-38535
T
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
V
Descriptive designator
Terminals
CDIP2-T18
18
Package style
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
2
1.3 Absolute maximum ratings. 1/
Supply voltage (VCC) .................................................................................................... 80 V dc
Pulsed collector current (IOUT) ..................................................................................... -350 mA 2/
Time averaged collector current (IOUT) ......................................................................... -300 mA 2/
Pulse output clamp diode current (IF) ........................................................................... 350 mA
Time averaged output clamp diode current (IF) ............................................................ 125 mA
Input voltage (VIN) ........................................................................................................ -0.3 V to VCC (20 V maximum)
Output voltage (VOUT) .................................................................................................. 80 V dc 3/
Maximum power dissipation (PD):
Any one driver, continuous ........................................................................................
Total package ............................................................................................................
Soldering temperature ..................................................................................................
Junction temperature (TJ) .............................................................................................
600 mW 4/
2.3 W
+260C 5/
+175C
Thermal resistance, junction-to-case (JC) ................................................................... 8C/W
Thermal resistance, junction-to-ambient (JA) .............................................................. 65C/W
1.4 Recommended operating conditions.
Supply voltage (VCC) .................................................................................................... 80 V dc
Operating ambient temperature range (TA) .................................................................. -55C to +125C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01: ......................................................................................................
Device type 02 .......................................................................................................
Maximum total dose available (dose rate  0.01 rad(Si)/s):
Device type 02 .......................................................................................................
Single event latch-up (SEL) .......................................................................................
100 krads(Si) 6/
100 krads(Si) 7/
50 krads(Si) 7/
No latch up 8/
______
1/
2/
3/
4/
5/
6/
7/
8/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Outputs may be paralleled to increase drive currents.
The output may momentarily go as low as -1.75 V when the output clamp diode is activated with a -200 mA clamp
surge current.
Based on 300 mA continuous output current and maximum VCESAT of 2 V.
Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and lead shall not be
resoldered until 3 minutes have elapsed.
Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si).
Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
Devices use dielectrically isolated (DI) technology and latch up is physically not possible.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Test circuits. The test circuits shall be as specified on figure 2.
3.2.4 Timing test circuit and waveform. The timing circuit and waveform shall be as specified on figure 3.
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
Group A
subgroups
VCC = 50 V
Device
type
unless otherwise specified
Output leakage current
(see figure 2, A)
ICEX
VCC = 80 V, VIN = 0.25 V,
1,2,3
01, 02
1,2
01, 02
Limits
Unit
Min
Max
-1
1
A
VOUT = 0 V,
pin under test
Collector-emitter
saturation voltage
(see figure 2, B)
VCESAT
VCC = 5 V, VIN = 2.4 V,
IOUT = -350 mA,
IIN(ON)
IIN(OFF)
2.2
1
2.2
01, 02
225
A
VCC = 80 V, VIN = 3.85 V
450
VCC = 80 V, VIN = 12 V
1.7
mA
10
A
VCC = 80 V, VIN = 0 V
1,2,3
VIN = 2.4 V, VCE = 2.0 V
1,2,3
01, 02
1,2,3
01, 02
5
mA
1,2,3
01, 02
50
A
1,2,3
01, 02
IOUT
Supply current
(outputs open)
(see figure 2, D)
ICC
all inputs simultaneously
Clamp diode leakage
current
(see figure 2, E)
IR
VCC = VOUT = 80 V
VF
1,2,3
VCC = 80 V, VIN = 2.4 V
Output source current 3/
(see figure 2, B)
Clamp diode forward
voltage
(see figure 2, F)
3
V
pulsed tested
M,D,P,L,R
Input current
(outputs open)
(see figure 2, C)
2.0
VCC = 80 V, VIN = 2.4 V,
IF = 200 mA,
-10
-350
mA
-1.5
V
VIN = VCC = open
IF = 350 mA,
-1.75
VIN = VCC = open
See footnotes at end of table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
5
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C  TA +125C
Group A
subgroups
VCC = 50 V
Device
type
unless otherwise specified
Turn-on delay time
tPLH
Turn-off delay time
tPHL
1/
Limits
Min
VCC = 35 V, RL = 175 ,
Unit
Max
9,10,11
01, 02
2
s
9,10,11
01, 02
11
s
see figure 3
VCC = 35 V, RL = 175 ,
see figure 3
RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. However, device type 01 is
only tested at the “R” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein).
RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels
M, D, P, and L for condition D. However, device type 02 is only tested at the “R” level in accordance with MIL-STD-883,
method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5
herein).
Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25C.
2/
RHA device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883, method 1019, condition A.
3/
If not tested, shall be guaranteed to the limits specified in table I herein.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required
in MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535
shall be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
6
Device types
01, 02
Case outline
V
Terminal number
Terminal symbol
1
INPUT 1
2
INPUT 2
3
INPUT 3
4
INPUT 4
5
INPUT 5
6
INPUT 6
7
INPUT 7
8
INPUT 8
9
VCC
10
GND
11
OUTPUT 8
12
OUTPUT 7
13
OUTPUT 6
14
OUTPUT 5
15
OUTPUT 4
16
OUTPUT 3
17
OUTPUT 2
18
OUTPUT 1
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
7
FIGURE 2. Test circuits.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
8
FIGURE 3. Timing test circuit and waveform.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
9
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as
described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the
device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and
reliability information shall be as specified in the manufacturer’s QM plan.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class T, screening shall be in
accordance with the device manufacturer’s Quality Management (QM) plan, and shall be conducted on all devices prior to
qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q, T and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, Appendix B.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Technology conformance inspection
for class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
10
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
1,9
1,9
Device
class T
As specified
in QM plan
1,2,3,9, 1/
10,11
1,2,3,9, 2/ 3/
10,11
As specified
in QM plan
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
1,2,3,9,10,11
1,2,3,9,10,11
As specified
in QM plan
1,2,3,9,10,11
1,2,3,9, 3/
10,11
As specified
in QM plan
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1,9
1,9
As specified
in QM plan
1,9
1,9
As specified
in QM plan
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
1/
2/
3/
PDA applies to subgroup 1.
PDA applies to subgroups 1, 9, and deltas.
Delta limits as specified in table IIB shall be required where specified, and the
delta limits shall be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C.
Test 1/
Symbol
Conditions
Limits
Min
Supply current
Input current
1/
ICC
IIN(ON)
VIN = 12 V
Unit
Max
100
A
50
A
These parameters shall be recorded before and after the required burn-in and life test to
determine delta limits.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein for device types 01 and 02. In addition, for device type 02 a low dose rate test
shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
G
SHEET
11
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q, T and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein)
to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
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SHEET
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00520
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
00520
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
Circuit function
IS-2981RH
IS-2981EH
Radiation hardened 8-channel source driver
Radiation hardened 8-channel source driver
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
13
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00520
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01, 02
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01, 02
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01, 02
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01, 02
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
14
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00520
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Test circuits. The test circuits shall be as defined in paragraph 3.2.3 herein.
A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.5 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00520
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1,
and 4.4.4.2 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
16
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00520
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 2660 x 5120 microns
Die thickness: 19 1 mils
Interface materials.
Top metallization: Al/Cu 16.0 kÅ 2.0 kÅ
Backside metallization: None
Glassivation.
Type: Nitride (Si3N4) over Silox (SiO2)
Thickness: Nitride 4.0 kÅ 1.0 kÅ
Substrate: HVTDLM: Bonded wafer, dielectric isolated complementary bipolar.
Assembly related information.
Substrate potential: Must be tied to GND.
Special assembly instructions:
1. Bond to all four pad 9 locations for VCC current sharing purposes.
2. Bond to both pad 10 locations for GND current sharing purposes.
3. Pad 10A is not used for die applications.
4. Die backside must be connected to GND.
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00520
A
REVISION LEVEL
G
SHEET
17
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 14-10-02
Approved sources of supply for SMD 5962-00520 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R0052001QVC
34371
IS1-2981RH-8
5962R0052001TVC
34371
IS1-2981RH-T
5962R0052001VVC
34371
IS1-2981RH-Q
5962R0052001V9A
34371
IS0-2981RH-Q
5962R0052002VVC
34371
IS1-2981EH-Q
5962R0052002V9A
34371
IS0-2981EH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.