s4001 e

S4001
Datasheet
N-channel SiC power MOSFET bare die
VDSS
650V
RDS(on) (Typ.)
30m
ID
70A*1
Features
Inner circuit
1) Low on-resistance
(2)
2) Fast switching speed
(1) Gate
(2) Drain
(3) Source
3) Fast reverse recovery
*1
(1)
4) Easy to parallel
*1 Body Diode
5) Simple to drive
(3)
Application
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Symbol
Value
Unit
VDSS
650
V
ID *1
70
A
175
A
ID,pulse
*2
Gate - Source voltage
VGSS
4 to 22
V
Junction temperature
Tj
175
°C
Tstg
55 to 175
°C
Range of storage temperature
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristics (Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Unit
Conditions
Min.
Typ.
Max.
650
-
-
V
Tj = 25°C
-
1
10
A
Tj = 150°C
-
2
-
VGS = 0V, ID = 1mA
VDS = 650V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS
VGS = 22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS
VGS = 4V, VDS = 0V
-
-
100
nA
2.7
-
5.6
V
-
30
37.5
m
Tj = 125°C
-
39.6
-
f = 1MHz, open drain
-
7
-
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 13.3mA
VGS = 18V, ID = 27A
Static drain - source
on - state resistance
Gate input resistance
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© 2015 ROHM Co., Ltd. All rights reserved.
RDS(on) *3 Tj = 25°C
RG
2/11

2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
*3
Conditions
Unit
Min.
Typ.
Max.
VDS = 10V, ID = 27A
-
9.4
-
Transconductance
gfs
Input capacitance
Ciss
VGS = 0V
-
1526
-
Output capacitance
Coss
VDS = 500V
-
89
-
Reverse transfer capacitance
Crss
f = 1MHz
-
42
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 300V
-
230
-
Turn - on delay time
td(on) *3
VDD = 300V, ID = 18A
-
22
-
VGS = 18V/0V
-
41
-
RL = 17
-
48
-
RG = 0
-
27
-
-
168
-
Rise time
tr
Turn - off delay time
Fall time
Turn - off switching loss
*3
td(off)
tf
Turn - on switching loss
*3
*3
Eon
Eoff
*3
*3
S
pF
pF
ns
VDD = 300V, ID=27A
VGS = 18V/0V
RG = 0 L=250H
*Eon includes diode
reverse recovery
J
-
112
-
Gate Charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Total gate charge
Qg *3
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *3
Gate plateau voltage
V(plateau)
*3
Conditions
Unit
Min.
Typ.
Max.
VDD = 300V
-
104
-
ID = 27A
-
25
-
VGS = 18V
-
42
-
VDD = 300V, ID = 27A
-
9.6
-
nC
V
*1 For Tj=175°C and thermal dissiparion to ambience of 165W or more.
Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
2016.06 - Rev.B
Data Sheet
S4001
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Inverse diode continuous,
forward current
Symbol
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
70
A
-
-
175
A
-
3.2
-
V
-
26
-
ns
-
130
-
nC
-
10
-
A
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD
Reverse recovery time
*3
trr *3
*3
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm *3
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© 2015 ROHM Co., Ltd. All rights reserved.
VGS = 0V, IS = 27A
IF = 27A, VR = 300V
di/dt = 1100A/s
4/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristic curves
Fig.1 Typical Output Characteristics(I)
Fig.2 Typical Output Characteristics(II)
35
70
20V
18V
16V
50
Ta = 25ºC
Pulsed
14V
40
12V
30
10V
20
10
25
20V
18V
16V
14V
20
12V
30
Drain Current : ID [A]
Drain Current : ID [A]
60
10V
15
10
VGS= 8V
5
VGS= 8V
0
0
0
2
4
6
8
10
0
Drain - Source Voltage : VDS [V]
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150ºC Typical Output
Characteristics(I)
Fig.4 Tj = 150ºC Typical Output
Characteristics(II)
35
70
20V
60
18V
30
12V
12V
Drain Current : ID [A]
25
40
10V
30
VGS= 8V
10
14V
18V
14V
20
16V
20V
16V
50
Drain Current : ID [A]
Ta = 25ºC
Pulsed
10V
20
15
VGS= 8V
10
5
Ta = 150ºC
Pulsed
Ta = 150ºC
Pulsed
0
0
0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
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1
2
3
4
5
Drain - Source Voltage : VDS [V]
5/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristic curves
Fig.5 Typical Transfer Characteristics (I)
Fig.6 Typical Transfer Characteristics (II)
70
100
VDS = 10V
Pulsed
Drain Current : ID [A]
10
Drain Current : ID [A]
VDS = 10V
Pulsed
60
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
1
0.1
50
40
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
30
20
10
0.01
0
0
2
4
6
8
0
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
Fig.8 Transconductance vs. Drain Current
6
10
VDS = 10V
ID = 13.3mA
5
VDS = 10V
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
2
4
3
2
1
0
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
-50
0
50
100
150
200
0.1
Junction Temperature : Tj [ºC]
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1
10
Drain Current : ID [A]
6/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.10 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.12
Ta = 25ºC
Pulsed
0.1
0.08
0.06
ID = 47A
0.04
ID = 27A
0.02
0
8
10
12
14
16
18
20
22
Static Drain - Source On-State Resistance
: RDS(on) []
Static Drain - Source On-State Resistance
: RDS(on) []
0.12
Gate - Source Voltage : VGS [V]
0.1
VGS = 18V
Pulsed
0.08
0.06
ID = 47A
0.04
ID = 27A
0.02
0
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current
Static Drain - Source On-State Resistance
: RDS(on) []
0.1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
VGS = 18V
Pulsed
0.01
1
10
100
Drain Current : ID [A]
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7/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristic curves
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
Fig.13 Coss Stored Energy
10000
20
Ta = 25ºC
Coss Stored Energy : EOSS [J]
Ciss
Capacitance : C [pF]
1000
Coss
Crss
100
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
15
10
5
0
0.1
1
10
100
1000
0
Drain - Source Voltage : VDS [V]
300
400
Fig.15 Dynamic Input Characteristics
20
10000
tf
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 300V
VGS = 18V
RG = 0
Pulsed
1000
Switching Time : t [ns]
200
Drain - Source Voltage : VDS [V]
Fig.14 Switching Characteristics
100
100
td(off)
tr
td(on)
10
15
Ta = 25ºC
VDD = 300V
ID = 27A
Pulsed
10
5
0
1
0.1
1
10
0 10 20 30 40 50 60 70 80 90 100110
100
Drain Current : ID [A]
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Total Gate Charge : Qg [nC]
8/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristic curves
Fig.16 Typical Switching Loss
vs. Drain - Source Voltage
Fig.17 Typical Switching Loss
vs. Drain Current
1200
400
Ta = 25ºC
ID=27A
VGS = 18V/0V
RG=0
L=250H
300
250
Eon
200
Ta = 25ºC
VDD=300V
VGS = 18V/0V
RG=0
L=250H
1000
Switching Energy : E [J]
Switching Energy : E [J]
350
150
100
Eoff
800
600
Eon
400
Eoff
200
50
0
0
100
200
300
400
0
500
Drain - Source Voltage : VDS [V]
10
20
30
40
50
60
70
80
Drain Current : ID [A]
Fig.18 Typical Switching Loss
vs. External Gate Resistance
1200
Ta = 25ºC
VDD=300V
ID=27A
VGS = 18V/0V
L=250H
Switching Energy : E [J]
1000
800
Eoff
600
Eon
400
200
0
0
5
10
15
20
25
30
External Gate Resistance : RG []
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© 2015 ROHM Co., Ltd. All rights reserved.
9/11
2016.06 - Rev.B
Data Sheet
S4001
Electrical characteristic curves
Fig.19 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.20 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0.01
Ta = 25ºC
di / dt = 1100A / us
VR = 300V
VGS = 0V
Pulsed
100
10
0
1
2
3
4
5
6
7
8
1
Source - Drain Voltage : VSD [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
100
Inverse Diode Forward Current : IS [A]
10/11
2016.06 - Rev.B
Data Sheet
S4001
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = ID×VDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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11/11
2016.06 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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R1102A