SCT3040KL Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS(on) (Typ.) 40m ID 55A PD 262W TO-247N (1)(2)(3) Inner circuit (2) Features 1) Low on-resistance 2) Fast switching speed *1 (1) Gate (2) Drain (3) Source (1) 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel (3) 5) Simple to drive Packaging specifications 6) Pb-free lead plating ; RoHS compliant Packing Application Tube Reel size (mm) - Tape width (mm) - Type • Solar inverters Basic ordering unit (pcs) • DC/DC converters Taping code • Switch mode power supplies Marking 30 C11 SCT3040KL • Induction heating • Motor drives Absolute maximum ratings (Ta = 25°C) Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 55 A Tc = 100°C ID *1 39 A 137 A Parameter Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 4 to 22 V Junction temperature Tj 175 °C Tstg 55 to 175 °C Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2016.06 - Rev.B Data Sheet SCT3040KL Thermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.44 0.57 °C/W Electrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Unit Conditions Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 A Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS VGS = 4V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 10mA 2.7 - 5.6 V - 40 52 m Tj = 125°C - 60 - f = 1MHz, open drain - 7 - Gate threshold voltage VGS = 18V, ID = 20A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. RDS(on) *3 Tj = 25°C RG 2/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristics (Ta = 25°C) Values Parameter Symbol *3 Conditions Unit Min. Typ. Max. VDS = 10V, ID = 20A - 8.3 - Transconductance gfs Input capacitance Ciss VGS = 0V - 1337 - Output capacitance Coss VDS = 800V - 76 - Reverse transfer capacitance Crss f = 1MHz - 27 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 600V - 122 - Turn - on delay time td(on) *3 VDD = 400V, ID = 18A - 21 - VGS = 18V/0V - 39 - RL = 22 - 49 - RG = 0 - 24 - - 283 - tr *3 Rise time Turn - off delay time Fall time tf Turn - on switching loss Turn - off switching loss *3 td(off) *3 Eon Eoff *3 *3 S pF pF ns VDD = 600V, ID=20A VGS = 18V/0V RG = 0 L=250H *Eon includes diode reverse recovery J - 118 - Gate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. VDD = 600V - 107 - Total gate charge Qg *3 Gate - Source charge Qgs *3 ID = 20A - 22 - Gate - Drain charge Qgd *3 VGS = 18V - 41 - VDD = 600V, ID = 20A - 9.6 - Gate plateau voltage V(plateau) nC V *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/13 2016.06 - Rev.B Data Sheet SCT3040KL Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 55 A - - 137 A - 3.2 - V - 25 - ns - 115 - nC - 9 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD Reverse recovery time trr *3 *3 Reverse recovery charge Qrr *3 Peak reverse recovery current Irrm *3 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VGS = 0V, IS = 20A IF = 20A, VR = 600V di/dt = 1100A/s 4/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 300 250 Drain Current : ID [A] Power Dissipation : PD [W] Operation in this area is limited by RDS(on) 200 150 100 PW = 100s 100 10 PW = 1ms PW = 10ms 1 50 Ta = 25ºC Single Pulse 0 PW = 100ms 0.1 0 50 100 150 200 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 25 50 20V 18V 16V 18V 16V 20 12V Drain Current : ID [A] Drain Current : ID [A] 40 20V 14V Ta = 25ºC Pulsed 30 20 10V 10 14V 15 12V 10V 10 Ta = 25ºC Pulsed 5 VGS= 8V VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150°C Typical Output Characteristics(I) Fig.7 Tj = 150°C Typical Output Characteristics(II) 25 50 16V 14V 12V 18V 40 20V Drain Current : ID [A] 20V Drain Current : ID [A] 1 10V 30 20 VGS= 8V 10V 20 12V 15 14V 16V 18V VGS= 8V 10 5 10 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 50 100 VDS = 10V Pulsed VDS = 10V Pulsed Drain Current : ID [A] Drain Current : ID [A] 40 10 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 1 0.1 30 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 20 10 0.01 0 0 2 4 6 8 10 12 14 16 18 20 0 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature Fig.11 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 10mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 2 4 3 2 1 0 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 -50 0 50 100 150 200 0.1 Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 10 Drain Current : ID [A] 7/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves 0.16 Ta = 25ºC Pulsed 0.14 0.12 0.1 0.08 ID = 37A 0.06 ID = 20A 0.04 0.02 0 6 8 10 12 14 16 18 20 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [] Static Drain - Source On-State Resistance : RDS(on) [] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 22 0.16 VGS = 18V Pulsed 0.14 0.12 0.1 0.08 0.06 ID = 37A 0.04 ID = 20A 0.02 0 -50 Gate - Source Voltage : VGS [V] 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 10000 40 Coss Stored Energy : EOSS [J] Ta = 25ºC Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 30 20 10 0 0.1 1 10 100 1000 0 Drain - Source Voltage : VDS [V] 400 600 Fig.18 Dynamic Input Characteristics 10000 20 100 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 400V VGS = 18V RG = 0 Pulsed 1000 td(off) tr td(on) 10 800 Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics tf Switching Time : t [ns] 200 15 Ta = 25ºC VDD = 600V ID = 20A Pulsed 10 5 0 1 0.1 1 10 0 10 20 30 40 50 60 70 80 90 100110 100 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 500 1800 Ta = 25ºC ID=20A VGS = 18V/0V RG=0 L=250H 400 350 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0 L=250H 1600 Switching Energy : E [J] Switching Energy : E [J] 450 Eon 300 250 200 150 Eoff 100 1400 1200 Eon 1000 800 600 400 Eoff 200 50 0 0 200 400 600 800 0 1000 Drain - Source Voltage : VDS [V] 10 20 30 40 50 60 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 1800 Ta = 25ºC VDD=600V ID=20A VGS = 18V/0V L=250H Switching Energy : E [J] 1600 1400 1200 1000 Eon 800 Eoff 600 400 200 0 0 5 10 15 20 25 30 External Gate Resistance : RG [] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/13 2016.06 - Rev.B Data Sheet SCT3040KL Electrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 100 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 1 8 Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 100 Inverse Diode Forward Current : IS [A] 11/13 2016.06 - Rev.B Data Sheet SCT3040KL Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/13 2016.06 - Rev.B Data Sheet SCT3040KL Dimensions TO-247 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 13/13 2016.06 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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