TSSP58038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Up to 2 m for presence sensing • Uses modulated bursts at 38 kHz • 940 nm peak wavelength • PIN diode and sensor IC in one package • Low supply current • Shielding against EMI • Visible light is suppressed by IR filter 19026 • Insensitive to supply voltage ripple and noise • Supply voltage: 2.5 V to 5.5 V MECHANICAL DATA • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Pinning: 1 = OUT, 2 = GND, 3 = VS DESCRIPTION APPLICATIONS The TSSP58038 is a compact infrared detector module for presence sensing applications. It receives 38 kHz modulated signals and has a peak sensitivity of 940 nm. • Reflective sensors for hand dryers, towel or soap dispensers, water faucets, toilet flush This component has not been qualified according to automotive specifications. • Vending machine fall detection • Security and pet gates • Person or object vicinity activation PARTS TABLE Carrier frequency 38 kHz TSSP58038 Package Minicast Pinning 1 = OUT, 2 = GND, 3 = VS Dimensions (mm) 5.0 W x 6.95 H x 4.8 D Mounting Leaded Application Presence sensors BLOCK DIAGRAM PRESENCE SENSING +3 V 16833_8 3 33 kΩ IR emitter VS Envelope signal 1 Input AMP Band pass Demodulator OUT 38 kHz +3 V 2 PIN Rev. 1.4, 31-Aug-15 Out to μC GND 1 Document Number: 82479 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT VS -0.3 to +6 V Supply voltage Supply current IS 5 mA Output voltage VO -0.3 to (VS + 0.3) V Output current IO 5 mA Tj 100 °C Storage temperature range Junction temperature Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Ptot 10 mW Power consumption Tamb ≤ 85 °C Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Supply current (pin 3) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Ev = 0, VS = 5 V ISD 0.55 0.7 0.9 mA Ev = 40 klx, sunlight ISH - 0.8 - mA Supply voltage VS 2.5 - 5.5 V Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 400 mA d - 25 - m IOSL = 0.5 mA, Ee = 2 mW/m2, test signal see fig. 1 VOSL - - 100 mV Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min. - 0.7 1.2 mW/m2 Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max. 50 - - W/m2 Directivity Angle of half transmission distance ϕ1/2 - ± 45 - deg Transmission distance Output voltage low (pin 1) Rev. 1.4, 31-Aug-15 2 Document Number: 82479 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) t tpi * T 10/f0 is recommended for optimal function * tpi VO Output Signal 1) VOH VOL 2) 0.8 ton, toff - Output Pulse Width (ms) Ee 16110 7/f0 < td < 15/f0 tpi - 5/f0 < tpo < tpi + 6/f0 ton 0.7 0.6 0.5 toff 0.4 0.3 0.2 λ = 950 nm, optical test signal, Fig. 3 0.1 0 0.1 tpo 2) td 1) 1000 10 000 1.2 Output pulse width 0.9 0.8 Input burst length 0.7 0.6 0.5 0.4 0.3 λ = 950 nm, optical test signal, Fig. 1 0.2 1.0 E e min./Ee - Rel. Responsivity tpo - Output Pulse Width (ms) 100 Fig. 4 - Output Pulse Diagram 1.0 0.8 0.6 0.4 f = f0 ± 5 % Δ f(3 dB) = f0/10 0.2 0.1 0.0 1 10 100 1000 10 000 100 000 0.7 Ee - Irradiance (mW/m2) Ee min. - Threshold Irradiance (mW/m2) t 600 µs t = 60 ms 94 8134 Output Signal, (see fig. 4) VOH VOL t on t off t 1.3 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 -10 10 30 50 70 90 Tamb - Ambient Temperature (°C) Fig. 3 - Output Function Rev. 1.4, 31-Aug-15 1.1 Fig. 5 - Frequency Dependence of Responsivity Optical Test Signal 600 µs 0.9 f/f0 - Relative Frequency 16925 Fig. 2 - Pulse Length and Sensitivity in Dark Ambient VO 10 Ee - Irradiance (mW/m2) Fig. 1 - Output Active Low Ee 1 t Fig. 6 - Sensitivity vs. Ambient Temperature 3 Document Number: 82479 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038 S (λ)rel - Relative Spectral Sensitivity www.vishay.com Vishay Semiconductors 0° 1.2 10° 20° 30° 1.0 0.8 40° 1.0 0.6 0.4 0.9 50° 0.8 60° 70° 0.2 0.7 80° 0 750 850 950 1150 1050 0.6 λ - Wavelength (nm) 94 8408 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 10° Ee min. - Sensitivity (mW/m2) 40° 1.0 0.8 60° 0 2.0 30° 50° 0.2 Fig. 9 - Vertical Directivity 20° 0.9 0.4 d rel - Relative Transmission Distance 19259 70° 0.7 80° 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.6 19258 0.4 0.2 2 0 3 4 5 VS - Supply Voltage (V) drel - Relative Transmission Distance Fig. 8 - Horizontal Directivity Fig. 10 - Sensitivity vs. Supply Voltage The typical application of this device is a reflective or beam break sensor with active low “detect” or “no detect” information contained in its output. Applications requiring up to 2 m beam break or 1 m reflective range benefit from the lower gain of these sensors because they are less sensitive to stray signal from the emitter, simplifying the mechanical design. Example for a sensor hardware: IR Receiver TSSP6P38 Emitter TSAL6200 Separation to avoid crosstalk by stray light inside the housing There should be no common window in front of the emitter and detector in order to avoid crosstalk via guided light through the window. Rev. 1.4, 31-Aug-15 4 Document Number: 82479 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5 4.8 (4) 2.8 (5.55) 6.95 ± 0.3 8.25 ± 0.3 R2 0.9 1.1 30.5 ± 0.5 (1.54) 0.85 max. 0.7 max. 2.54 nom. 2.54 nom. 0.5 max. 1.2 ± 0.2 Marking area technical drawings according to DIN specifications Not indicated to lerances ± 0.2 Drawing-No.: 6.550-5263.01-4 Issue: 12; 16.04.10 19009 Rev. 1.4, 31-Aug-15 R2 5 Document Number: 82479 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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