Variable Capacitance Diodes MA2Z368 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Parameter Symbol Rating Unit Reverse voltage (DC) VR 32 V Peak reverse voltage VRM 34 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.4 ± 0.15 2 1.7 ± 0.1 + 0.1 0.16 − 0.06 2.5 ± 0.2 0 to 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 0.9 ± 0.1 • Large capacitance ratio • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.3 − 0.05 ■ Features 0.4 ± 0.15 1.25 ± 0.1 For UHF and SHF electronic tuners 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 6L ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR Conditions Min Typ VR = 30 V Max Unit 50 nA CD(1V) VR = 1 V, f = 1 MHz 3.6 4.6 5.6 pF CD(30V) VR = 30 V, f = 1 MHz 0.5 0.65 0.9 pF Capacitance ratio CD(1V)/CD(30V) Series resistance* rD 4 VR = 4.5 pF, f = 470 MHz 2 Ω Note) 1.Rated input/output frequency: 470 MHz 2.* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2Z368 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 5 3 2 1 0.5 0.3 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) IR Ta Reverse current IR (nA) 100 VR = 33 V 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 1.03 100 1.02 80 Ta = 60°C 25°C 60 40 0 f = 1 MHz VR = 1 V 30 V 1.01 1.00 0.99 − 40°C 20 0.2 0.1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.98 0.97 0 20 40 60 80 Ambient temperature Ta (°C) 100