MA111 Variable Capacitance Diodes MA367 Silicon epitaxial planer type Unit : mm For UHF and VHF electronic tuner AFC INDICATES CATHODE ● Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- 1 0.4±0.15 matic insertion through taping 2 +0.1 Large capacity variation ratio 0.3 -0.05 ● 1.25±0.1 0.4±0.15 ■ Features 1.7±0.1 ■ Absolute Maximum Ratings (Ta= 25˚C) Parameter Symbol Rating Unit 0 to 0.05 0.9±0.1 +0.1 0.16 -0.06 2.5±0.2 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) V Reverse voltage (DC) VR Peak reverse voltage VRM 34 V Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to +150 ˚C 30 Marking Symbol : 6K * RL =10kΩ ■ Electrical Characteristics (Ta= 25˚C) Parameter Reverse current (DC) Diode capacitance Symbol Condition typ max Unit 10 nA IR VR= 30V CD(2V) VR= 2V, f= 1MHz 10.5 16.0 pF CD(10V) VR= 10V, f= 1MHz 3.3 5.7 pF 2.8 3.4 — 1.6 Ω Capacitance ratio CD(2V)/CD(10V) Series resistance rD * CD= 9pF, f= 470MHz Note 1. Rated input/output frequency : 470MHz 2. * rD measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER ■ Marking min 6K MA367 Variable Capacitance Diodes CD – VR IF – VF 100 120 f=1MHz Ta=25˚C 100 IF (mA) 20 10 5 80 1.01 Ta=60˚C –40˚C 25˚C 60 10V 1.00 40 0.99 20 0.98 3 2 0 1 0 4 0 8 12 16 20 24 28 32 36 40 0.2 VR (V) Reverse voltage 0.4 100 VR=30V 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature (˚C) Ta CD rank classification AFC variable capacitance gap classification table B rank 16 CD2V/CD10V=3.4 CD (2V) (pF) 15 14 13 12 CD2V/CD10V=2.8 11 10 0.6 Forward voltage IR – Ta IR (nA) VR=2V 1.02 CD (Ta) CD (Ta=25˚C) 30 Forward current CD (pF) Diode capacitance 1.03 f=1MHz 50 Reverse current CD – Ta 3.0 3.5 4.0 CD 4.5 (10V) (pF) 5.0 5.5 0.8 1.0 VF (V) 1.2 0.97 0 20 40 60 Ambient temperature 80 Ta (˚C) 100