Variable Capacitance Diodes MA2Z367 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 34 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 1.7 ± 0.1 2.5 ± 0.2 + 0.1 0.16 − 0.06 Parameter 0.4 ± 0.15 2 0 to 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 0.9 ± 0.1 • Large capacitance ratio • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.3 − 0.05 ■ Features 0.4 ± 0.15 1.25 ± 0.1 For AFC of UHF and VHF electronic tuner 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 6K ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR Conditions Min VR = 30 V Typ Max Unit 10 nA CD(2V) VR = 2 V, f = 1 MHz 10.5 16.0 pF CD(10V) VR = 10 V, f = 1 MHz 3.3 5.7 pF 3.4 1.6 Ω Capacitance ratio CD(2V)/CD(10V) Series resistance* rD 2.8 VR = 9 pF, f = 470 MHz Note) 1.Rated input/output frequency: 470 MHz 2.* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2Z367 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 50 30 20 10 5 3 1.03 100 1.02 80 Ta = 60°C 40 0 4 0 8 12 16 20 24 28 32 36 40 0 0.2 Reverse current IR (nA) VR = 30 V 1 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) CD rank classification Gap classification table for AFC B rank 16 CD(2V) / CD(10V) = 3.4 CD(2V) (pF) 15 14 13 12 CD(2V) / CD(10V) = 2.8 11 10 3.0 3.5 0.4 0.6 0.8 1.0 Forward voltage VF (V) 10 0.01 4.0 4.5 CD(10V) (pF) 5.0 VR = 2 V 1.01 10 V 1.00 0.98 IR T a 100 f = 1 MHz 0.99 Reverse voltage VR (V) 2 − 40°C 25°C 60 20 2 1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 100 5.5 1.2 0.97 0 20 40 60 80 Ambient temperature Ta (°C) 100