PANASONIC LN189M

Infrared Light Emitting Diodes
LN189M
GaAlAs Infrared Light Emitting Diode
Unit: mm
Light source for distance measuring systems
1
0.4±0.1
PD
160
mW
Forward current (DC)
IF
90
mA
IFP
175
mA
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
0.2
3.0±0.15
,
,
,
0.6
4.0±0.15
1.0
3.0±0.2
3.4±0.2
6.0±0.3
0.35
0.75
Power dissipation
0.15
1.5±0.2
3.2±0.15
1.5
Unit
2.0±0.2
Ratings
Pulse forward current
Spherical lens
φ0.4±0.03
2
Symbol
*
0.6±0.1
0.5±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.3
0.6±0.1
,,
,
,,
• High-power output, high-efficiency: PO = 5.5 mW (typ.)
• Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.)
• Infrared light emission close to monochromatic light: λP = 880 nm (typ.)
• Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
6.0±0.3
Mark (Black)
■ Features
0.1 max.
1.0
2.2±0.15
1: Anode
2: Cathode
Note) *: f = 10 kHz, Duty cycle = 25%
■ Electro-optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
min
typ
max
Unit
Radiant power
PO
IF = 100 mA
Peak emission wavelength
λP
IF = 100 mA
Spectral band width
∆λ
IF = 100 mA
50
Forward voltage (DC)
VF
IF = 100 mA
1.55
Reverse current (DC)
IR
VR = 3 V
Rise time
tr
IFP = 100 mA
20
ns
Fall time
tf
IFP = 100 mA
20
ns
Half-power angle
θ
The angle in which radiant intencity is 50%
20
°
3
mW
880
nm
nm
1.9
V
10
µA
Precautions for Use
[Airtightness] This product is not structured to provide a complete air seal. Therefore it cannxot be immersed in solutions for
purposes such as boiling tests or ultrasonic cleaning.
[Ability to withstand soldering heat]
The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore
this product cannot be put through automated soldering operations in which the ambient temperature exceeds
the specified temperature. The recommended soldering conditions are as follows.
· Temperature of soldering iron tip: 260°C or less
: 300°C or less
or
· Soldering time
: 5 seconds or less
: 1 second or less
· Soldering position
: At least 2 mm away from lead base
]
[Ability to withstand chemicals]
If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol.
If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or
a change in the condition of the case material.
1
LN189M
Infrared Light Emitting Diodes
IF  T a
IF  V F
120
IFP  VF
1
160
tW = 10 µs
f = 100 Hz
Ta = 25°C
Ta = 25°C
140
80
60
40
Pulse forward current IFP (A)
Forward current IF (mA)
Forward current IF (mA)
100
120
100
80
60
40
10−1
20
20
0
20
40
60
80
0
100
0
0.5
∆PO  IF
Forward voltage VF (V)
2
3
4
5
∆PO  Ta
10
IF = 80 mA
1.4
10 mA
1.2
1 mA
IF = 90 mA
1
1.0
10−2
10−1
1
0.8
−40
10
Forward current IF (A)
0
40
80
120
Ambient temperature Ta (°C)
λP  Ta
Relative radiant intensity (%)
900
800
700
40
80
Directivity characteristics
0°
IF = 20 mA
IF = 50 mA
0
Ambient temperature Ta (°C)
Spectral characteristics
100
1 000
10−1
−40
80
90
80
70
60
60
50
40
40
30
20
20
10°
20°
100
Relative radiant intensity (%)
Relative radiant power ∆PO
(2)
(3)
10−1
Peak emission wavelength λP (nm)
1
Forward voltage VF (V)
1.6
1
10−2 −3
10
0
VF  Ta
(1)
10
10−2
2.0
1.8
(1) tW = 10 µs
Duty = 0.1%
(2) tW = 50 µs
Duty = 50%
(3) DC
Ta = 25°C
102
1.5
Forward voltage VF (V)
Ambient temperature Ta (°C)
103
1.0
Relative radiant power ∆PO
0
−25
30°
40°
50°
60°
70°
80°
90°
600
−40
0
40
80
Ambient temperature Ta (°C)
2
120
0
780
820
860
900
940
Wavelength λ (nm)
980
1 020