Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm 12.7 min. 2.0±0.1 0.2±0.05 3.0±0.3 For optical control systems 1. 0± 0. 1 5 .1 +0 0.1 – 0 1. Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors 2-ø0.45±0.05 45± ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) 2.54±0.25 Parameter * Symbol Ratings Unit Power dissipation PD 160 mW Forward current (DC) IF 100 mA Pulse forward current IFP * 2 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Symbol Conditions min typ 3.5 6 max Unit PO IF = 100mA Peak emission wavelength λP IF = 100mA 950 nm Spectral half band width ∆λ IF = 100mA 50 nm Forward voltage (DC) VF IF = 100mA 1.25 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Rise time tr Fall time tf Half-power angle θ IFP = 100mA The angle in which radiant intencity is 50% mW 1.6 V 10 µA 50 pF 1 µs 1 µs 100 deg. 1 LN52 Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle IF — VF 10 2 120 120 60 40 100 10 IF (mA) 80 Ta = 25˚C Forward current IFP (A) 100 Pulse forward current Allowable forward current IF (mA) Ta = 25˚C 1 10 –1 60 40 20 20 0 – 25 0 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) 0 10 2 10 1 ∆PO 80 Relative radiant power 10 60 40 1 2 0 0 40 60 80 10 –2 120 1 10 1mA 0.8 0.4 80 Ambient temperature Ta (˚C ) 120 40 10 4 1000 IF = 100mA 0 10 3 λP — Ta 1 10 –1 – 40 10 2 Pulse forward current IFP (mA) IF = 100mA λP (nm) 50mA 10mA 40 100 ∆PO IF = 100mA Relative radiant power VF (V) 20 10 0 (2) 1 ∆PO — Ta VF — Ta 0 – 40 (1) Forward current IF (mA) 1.6 1.2 10 2 10 –1 Peak emission wavelength 0 2.0 10 20 tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 3 4 5 1.6 Ta = 25˚C (1) tw = 10µs Duty Cycle = 0.1% (2) DC 10 3 ∆PO Relative radiant power IFP (mA) Pulse forward current 10 2 1.2 ∆PO — IFP 100 10 3 0.8 ∆PO — IF 120 Forward voltage VF (V) Forward voltage 0.4 Forward voltage VF (V) Ta = 25˚C 2 0 Duty cycle (%) IFP — VF 10 4 10 –1 80 80 Ambient temperature Ta (˚C ) 980 960 940 920 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 120 Infrared Light Emitting Diodes IF = 100mA Ta = 25˚C 60 40 60 20 20˚ Frequency characteristics 30˚ Ta = 25˚C 50˚ 10 60˚ 70˚ 80˚ 90˚ 40 10 2 40˚ 100 80 80 10˚ Relative radiant intensity(%) Relative radiant intensity (%) Directivity characteristics 0˚ 100 Modulation output Spectral characteristics LN52 1 10 –1 20 0 800 850 900 950 Wavelength 1000 1050 1100 λ (nm) 10 –2 10 10 2 10 3 10 4 Frequency f (kHz) 3