PANASONIC LN52

Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
Unit : mm
Features
High-power output, high-efficiency : PO = 6 mW (typ.)
Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light : λP = 950 nm
12.7 min.
2.0±0.1
0.2±0.05
3.0±0.3
For optical control systems
1.
0±
0.
1
5
.1
+0 0.1
–
0
1.
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
2-ø0.45±0.05
45±
ø5.35 +0.2
–0.1
ø4.2 +0.1
–0.2
3˚
2
1
Absolute Maximum Ratings (Ta = 25˚C)
2.54±0.25
Parameter
*
Symbol
Ratings
Unit
Power dissipation
PD
160
mW
Forward current (DC)
IF
100
mA
Pulse forward current
IFP
*
2
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Symbol
Conditions
min
typ
3.5
6
max
Unit
PO
IF = 100mA
Peak emission wavelength
λP
IF = 100mA
950
nm
Spectral half band width
∆λ
IF = 100mA
50
nm
Forward voltage (DC)
VF
IF = 100mA
1.25
Reverse current (DC)
IR
VR = 3V
Capacitance between pins
Ct
VR = 0V, f = 1MHz
Rise time
tr
Fall time
tf
Half-power angle
θ
IFP = 100mA
The angle in which radiant intencity is 50%
mW
1.6
V
10
µA
50
pF
1
µs
1
µs
100
deg.
1
LN52
Infrared Light Emitting Diodes
IF — Ta
IFP — Duty cycle
IF — VF
10 2
120
120
60
40
100
10
IF (mA)
80
Ta = 25˚C
Forward current
IFP (A)
100
Pulse forward current
Allowable forward current
IF (mA)
Ta = 25˚C
1
10 –1
60
40
20
20
0
– 25
0
20
40
60
80
10 –2
10 –1
100
1
Ambient temperature Ta (˚C )
0
10 2
10
1
∆PO
80
Relative radiant power
10
60
40
1
2
0
0
40
60
80
10 –2
120
1
10
1mA
0.8
0.4
80
Ambient temperature Ta (˚C )
120
40
10 4
1000
IF = 100mA
0
10 3
λP — Ta
1
10 –1
– 40
10 2
Pulse forward current IFP (mA)
IF = 100mA
λP (nm)
50mA
10mA
40
100
∆PO
IF = 100mA
Relative radiant power
VF (V)
20
10
0
(2)
1
∆PO — Ta
VF — Ta
0
– 40
(1)
Forward current IF (mA)
1.6
1.2
10 2
10 –1
Peak emission wavelength
0
2.0
10
20
tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
3
4
5
1.6
Ta = 25˚C
(1) tw = 10µs
Duty Cycle = 0.1%
(2) DC
10 3
∆PO
Relative radiant power
IFP (mA)
Pulse forward current
10 2
1.2
∆PO — IFP
100
10 3
0.8
∆PO — IF
120
Forward voltage VF (V)
Forward voltage
0.4
Forward voltage VF (V)
Ta = 25˚C
2
0
Duty cycle (%)
IFP — VF
10 4
10 –1
80
80
Ambient temperature Ta (˚C )
980
960
940
920
900
– 40
0
40
80
Ambient temperature Ta (˚C )
120
Infrared Light Emitting Diodes
IF = 100mA
Ta = 25˚C
60
40
60
20
20˚
Frequency characteristics
30˚
Ta = 25˚C
50˚
10
60˚
70˚
80˚
90˚
40
10 2
40˚
100
80
80
10˚
Relative radiant
intensity(%)
Relative radiant intensity (%)
Directivity characteristics
0˚
100
Modulation output
Spectral characteristics
LN52
1
10 –1
20
0
800
850
900
950
Wavelength
1000 1050 1100
λ (nm)
10 –2
10
10 2
10 3
10 4
Frequency f (kHz)
3