Infrared Light Emitting Diodes LN51F, LN51L Unit : mm LN51F ø4.6±0.15 4.5±0.2 GaAs Infrared Light Emitting Diodes Glass window 12.7 min. For optical control systems Features 2-ø0.45±0.05 High-power output, high-efficiency : PO = 6 mW (typ.) 2.54±0.25 2 0. 0± 1. Fast response : tr, tf = 1 µs (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) 3˚ 45± 1. 0± 0. 15 Infrared light emission close to monochromatic light : λP =950 nm (typ.) 2 1 Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) 1: Cathode 2: Anode ø5.75 max. TO-18 standard type package LN51L Unit : mm ø4.6±0.15 Glass lens mW Forward current (DC) IF 100 mA Pulse forward current IFP * 2 A Reverse voltage (DC) VR 5 V Operating ambient temperature Topr –25 to +100 ˚C Storage temperature Tstg –30 to +100 ˚C 2-ø0.45±0.05 2.54±0.25 .2 0 0± Unit 150 1. Ratings PD 12.7 min. Parameter 0± 0 .1 3˚ 45± 5 f = 100 Hz, Duty cycle = 0.1 % 1. * Symbol Power dissipation 6.3±0.3 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Cathode 2: Anode ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min max Unit Radiant power PO IF = 100mA Peak emission wavelength λP IF = 100mA Spectral half band width ∆λ IF = 100mA 50 Forward voltage (DC) VF IF = 100mA 1.25 1.5 V Reverse current (DC) IR VR = 5V 0.005 10 µA Capacitance between pins Ct VR = 0V, f = 1MHz Rise time tr Fall time tf Half-power angle LN51F LN51L θ IFP = 100mA The angle in which radiant intencity is 50% 3 typ 6 mW 950 nm nm 50 pF 1 µs 1 µs 32 deg. 8 deg. 1 LN51F, LN51L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 10 2 60 40 tw = 10µs Ta = 25˚C 100 10 1 10 –1 20 40 60 80 10 –2 10 –1 100 1 Duty cycle (%) IFP — VF ∆PO — IFP 10 3 Relative radiant power ∆PO 10 2 10 1 0.4 0.8 1.2 1.6 2.0 ∆PO — Ta (1) 10 (2) 1 0 10 10 2 IF = 100mA 1 10 –1 1 2 10 –2 1 10 10 2 10 3 Forward voltage VF (V) Pulse forward current IFP (mA) Spectral characteristics Directivity characteristics 100 0˚ 100 IF = 100mA Ta = 25˚C LN51F 80 80 60 LN51L 50 40 40 30 20 20 0 40 80 Ambient temperature Ta (˚C ) Frequency characteristics 20˚ 10 2 Ta = 25˚C Ta = 25˚C 90 70 60 10˚ 10 –1 – 40 10 4 30˚ 40˚ 50˚ 60˚ 70˚ 10 Modulation output 0 tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 3 4 5 Relative radiant intensity(%) IFP (mA) 40 Forward voltage VF (V) (1) tw = 10µs Duty Cycle = 0.1% (2) DC Ta = 25˚C 10 3 Pulse forward current 60 0 10 2 10 Ambient temperature Ta (˚C ) Relative radiant power ∆PO 0 10 4 10 –1 80 20 20 0 – 25 Relative radiant intensity (%) Ta = 25˚C IF (mA) 80 IF — VF 120 Forward current IFP (A) 100 Pulse forward current Allowable forward current IF (mA) 120 1 10 –1 80˚ 90˚ 0 800 850 900 950 Wavelength 2 1000 1050 1100 λ (nm) 10 –2 10 10 2 10 3 Frequency f (kHz) 10 4