PANASONIC LN51F

Infrared Light Emitting Diodes
LN51F, LN51L
Unit : mm
LN51F
ø4.6±0.15
4.5±0.2
GaAs Infrared Light Emitting Diodes
Glass window
12.7 min.
For optical control systems
Features
2-ø0.45±0.05
High-power output, high-efficiency : PO = 6 mW (typ.)
2.54±0.25
2
0.
0±
1.
Fast response : tr, tf = 1 µs (typ.)
Narrow directivity, suitable for effective use of optical output :
θ = 8 deg. (LN51L)
3˚
45±
1.
0±
0.
15
Infrared light emission close to monochromatic light :
λP =950 nm (typ.)
2 1
Wide directivity, matched for external optical systems :
θ = 32 deg. (LN51F)
1: Cathode
2: Anode
ø5.75 max.
TO-18 standard type package
LN51L
Unit : mm
ø4.6±0.15
Glass lens
mW
Forward current (DC)
IF
100
mA
Pulse forward current
IFP
*
2
A
Reverse voltage (DC)
VR
5
V
Operating ambient temperature
Topr
–25 to +100
˚C
Storage temperature
Tstg
–30 to +100
˚C
2-ø0.45±0.05
2.54±0.25
.2
0
0±
Unit
150
1.
Ratings
PD
12.7 min.
Parameter
0±
0
.1
3˚
45±
5
f = 100 Hz, Duty cycle = 0.1 %
1.
*
Symbol
Power dissipation
6.3±0.3
Absolute Maximum Ratings (Ta = 25˚C)
2 1
1: Cathode
2: Anode
ø5.75 max.
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
max
Unit
Radiant power
PO
IF = 100mA
Peak emission wavelength
λP
IF = 100mA
Spectral half band width
∆λ
IF = 100mA
50
Forward voltage (DC)
VF
IF = 100mA
1.25
1.5
V
Reverse current (DC)
IR
VR = 5V
0.005
10
µA
Capacitance between pins
Ct
VR = 0V, f = 1MHz
Rise time
tr
Fall time
tf
Half-power angle
LN51F
LN51L
θ
IFP = 100mA
The angle in which radiant intencity is 50%
3
typ
6
mW
950
nm
nm
50
pF
1
µs
1
µs
32
deg.
8
deg.
1
LN51F, LN51L
Infrared Light Emitting Diodes
IF — Ta
IFP — Duty cycle
10 2
60
40
tw = 10µs
Ta = 25˚C
100
10
1
10 –1
20
40
60
80
10 –2
10 –1
100
1
Duty cycle (%)
IFP — VF
∆PO — IFP
10 3
Relative radiant power ∆PO
10 2
10
1
0.4
0.8
1.2
1.6
2.0
∆PO — Ta
(1)
10
(2)
1
0
10
10 2
IF = 100mA
1
10 –1
1
2
10 –2
1
10
10 2
10 3
Forward voltage VF (V)
Pulse forward current IFP (mA)
Spectral characteristics
Directivity characteristics
100
0˚
100
IF = 100mA
Ta = 25˚C
LN51F
80
80
60
LN51L
50
40
40
30
20
20
0
40
80
Ambient temperature Ta (˚C )
Frequency characteristics
20˚
10 2
Ta = 25˚C
Ta = 25˚C
90
70
60
10˚
10 –1
– 40
10 4
30˚
40˚
50˚
60˚
70˚
10
Modulation output
0
tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
3
4
5
Relative radiant intensity(%)
IFP (mA)
40
Forward voltage VF (V)
(1) tw = 10µs
Duty Cycle = 0.1%
(2) DC
Ta = 25˚C
10 3
Pulse forward current
60
0
10 2
10
Ambient temperature Ta (˚C )
Relative radiant power ∆PO
0
10 4
10 –1
80
20
20
0
– 25
Relative radiant intensity (%)
Ta = 25˚C
IF (mA)
80
IF — VF
120
Forward current
IFP (A)
100
Pulse forward current
Allowable forward current
IF (mA)
120
1
10 –1
80˚
90˚
0
800
850
900
950
Wavelength
2
1000 1050 1100
λ (nm)
10 –2
10
10 2
10 3
Frequency f (kHz)
10 4