New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 1.2 nC RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices • DC/DC Converter PowerPAK SC75-6L-Dual D1 1 S1 2 G1 D2 Marking Code 3 D1 D2 D1 6 CAX Part # code D2 4 S2 G2 Lot Traceability and Date code G2 5 1.60 mm G1 XXX 1.60 mm Ordering Information: SiB912DK-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit 20 ±8 1.5a 1.5a 1.5a, b, c 1.4b, c 5 1.5a 0.9b, c 3.1 2.0 1.1b, c 0.7b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t≤5s RthJA 90 115 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 32 40 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. g. Based on TC = 25 °C. Document Number: 68883 S-82022-Rev. A, 01-Sep-08 www.vishay.com 1 New Product SiB912DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 22 mV/°C -2 0.4 1.0 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 5 µA A VGS = 4.5 V, ID = 1.8 A 0.180 0.216 VGS = 2.5 V, ID = 1.6 A 0.223 0.268 VGS = 1.8 V, ID = 0.3 A 0.300 0.375 VDS = 10 V, ID = 1.8 A 3 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 95 VDS = 10 V, VGS = 0 V, f = 1 MHz 11 VDS = 10 V, VGS = 8 V, ID = 1.8 A VDS = 10 V, VGS = 4.5 V, ID = 1.8 A 2.0 3.0 1.2 1.8 0.3 VDD = 10 V, RL = 7.1 Ω ID ≅ 1.4 A, VGEN = 4.5 V, Rg = 1 Ω 0.5 2.5 5.0 5 10 10 20 24 36 tf 8 16 td(on) 2 4 9 18 8 16 7 14 td(off) tr td(off) nC 0.15 f = 1 MHz td(on) tr pF 24 VDD = 10 V, RL = 7.1 Ω ID ≅ 1.4 A, VGEN = 8 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 1.5c TC = 25 °C 5 IS = 1.4 A, VGS = 0 V IF = 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.7 1.2 V 9 18 ns 3 6 nC 6 3 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68883 S-82022-Rev. A, 01-Sep-08 New Product SiB912DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 5 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 4 VGS = 2 V 3 2 VGS = 1.5 V 0.6 TC = 25 °C 0.4 0.2 1 TC = 125 °C TC = - 55 °C VGS = 1 V 0.0 0.0 0 0 1 2 3 4 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.5 120 0.3 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.8 V 0.4 VGS = 2.5 V 0.2 VGS = 4.5 V 90 60 0.1 30 0.0 0 0 1 2 3 4 Crss 0 5 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 ID = 1.8 A ID = 1.8 A VDS = 10 V VDS = 16 V 4 2 0.4 0.8 1.2 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68883 S-82022-Rev. A, 01-Sep-08 1.6 2.0 1.5 VGS = 2.5 V (Normalized) 6 0 0.0 20 1.8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) Coss 1.2 VGS = 4.5 V 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiB912DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.8 A TJ = 150 °C 1 TJ = 25 °C 0.3 TJ = 125 °C 0.2 TJ = 25 °C 0.1 0.0 0.1 0 0.3 0.6 0.9 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 8 0.85 0.75 Power (W) VGS(th) (V) 6 0.65 ID = 250 µA 0.55 4 2 0.45 0.35 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 68883 S-82022-Rev. A, 01-Sep-08 New Product SiB912DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 I D - Drain Current (A) 3 2 Package Limited 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.5 1.2 Power (W) Power (W) 3 2 0.9 0.6 1 0.3 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68883 S-82022-Rev. A, 01-Sep-08 www.vishay.com 5 New Product SiB912DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68883. www.vishay.com 6 Document Number: 68883 S-82022-Rev. A, 01-Sep-08 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual 2.2 (0.087) 1.25 (0.049) 0.25 (0.01) 1.6 (0.063) (0.024) 0.61 2.2 (0.087) (0,0) 0.32 (0.013) 0.44 (0.017) 0.25 (0.01) 0.375 (0.015) 1 0.5 (0.02) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70489 Revision: 28-Oct-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000