MICROCHIP MCP16251

MCP16251/2
Low Quiescent Current, PFM/PWM Synchronous Boost Regulator
with True Output Disconnect or Input/Output Bypass Option
Features:
Applications:
• Up to 96% Typical Efficiency
• 650 mA Typical Peak Input Current Limit:
- IOUT > 100 mA @ 3.3V VOUT, 1.2V VIN
- IOUT > 250 mA @ 3.3V VOUT, 2.4V VIN
- IOUT > 225 mA @ 5.0V VOUT, 3.3V VIN
• Low Device Quiescent Current:
- Output Quiescent Current: < 4 µA typical, 
device is not switching (VOUT > VIN,
excluding feedback divider current)
- Input Sleep Current: 1 µA
- No Load Input Current: 14 µA typical
• Shutdown Current: 0.6 µA typical
• Low Start-up Voltage: 0.82V, 1 mA load
• Low Operating Input Voltage: down to 0.35V
• Adjustable Output Voltage Range: 1.8V to 5.5V
• Maximum Input Voltage  VOUT < 5.5V
• Automatic PFM/PWM Operation:
- PWM Operation: 500 kHz
- PFM Output Ripple: 150 mV typical
• Feedback voltage: 1.23V
• Internal Synchronous Rectifier
• Internal Compensation
• Inrush Current Limiting and Internal Soft Start
(1.5 ms typical)
• Selectable, Logic Controlled, Shutdown States:
- True Load Disconnect Option (MCP16251)
- Input to Output Bypass Option (MCP16252)
• Anti-Ringing Control
• Overtemperature Protection
• Available Packages:
- SOT-23-6
- 2 x 3 8-Lead TDFN
• One, Two and Three Cell Alkaline and NiMH/NiCd
Portable Products
• Solar Cell Applications
• Personal Care and Medical Products
• Bias for Status LEDs
• Smartphones, MP3 Players, Digital Cameras
• Remote controllers, Portable Instruments
• Wireless Sensors
• Bluetooth Headsets
• +3.3V to +5.0V Distributed Power Supply
General Description
The MCP16251/2 is a compact, high-efficiency, fixed
frequency, synchronous step-up DC-DC converter.
This family of devices provides an easy-to-use power
supply solution for applications powered by either
one-cell, two-cell or three-cell alkaline, NiCd, NiMH,
one-cell Li-Ion or Li-Polymer batteries.
A low-voltage technology allows the regulator to start
up without high inrush current or output voltage
overshoot from a low voltage input. High efficiency is
accomplished by integrating the low-resistance
N-Channel boost switch and synchronous P-Channel
switch. All compensation and protection circuitry are
integrated to minimize external components.
MCP16251/2 operates and consumes less than 14 µA
from battery, while operating at no load (VOUT = 3.3V,
VIN = 1.5V). The devices provide a true disconnect
from input to output (MCP16251) or an input-to-output
bypass (MCP16252), while in shutdown (EN = GND).
Both options consume less than 0.6 µA from battery.
Output voltage is set by a small external resistor
divider. Two package options, SOT-23-6 and
2 x 3 TDFN-8, are available.
Package Types
MCP16251/2
6-Lead SOT-23
SW 1
GND 2
EN 3
6 VIN
MCP16251/2
2x3 TDFN*
VFB 1
5 VOUT SGND 2
PGND 3
4 VFB
EN 4
8 VIN
EP
9
7 VOUTS
6 VOUTP
5 SW
* Includes Exposed Thermal Pad (EP); see Table 3-1.
 2013 Microchip Technology Inc.
DS25173A-page 1
MCP16251/2
Typical Application
L
4.7 µH
VOUT
VIN
3.3V / 75 mA
SW
0.9V to 1.7V
VOUT
VIN
CIN
4.7 µF
1.69 M
VFB
EN
COUT
10 µF
RBOT
Alkaline
+
RTOP
1 M
GND
-
L
4.7 µH
VIN
3.0V to 4.2V
CIN
4.7 µF
VIN
VOUTP
EN
VFB
Li-Ion
+
SW V
OUTS
VOUT
5.0V / 200 mA
RTOP
3.09 M
RBOT
COUT
10 µF
1 M
PGND SGND
-
100
95
VIN = 3.0V
Efficiency (%)
90
85
VIN = 1.5V
80
VIN = 2.4V
75
70
65
60
55
VOUT = 3.3V
50
0.1
DS25173A-page 2
1
10
IOUT (mA)
100
1000
 2013 Microchip Technology Inc.
MCP16251/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
EN, VFB, VIN, VSW, VOUT - GND ......................... +6.5V
EN, VFB ........ < maximum VOUT or VIN > (GND – 0.3V)
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode........................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65oC to +150oC
Ambient Temp. with Power Applied......-40oC to +85oC
Operating Junction Temperature........-40oC to +125oC
ESD Protection On All Pins:
HBM .............................................................. 4 kV
MM............................................................... 400 V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT = 0 mA, 
TA = +25°C. Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Minimum Start-Up Voltage
VIN
—
0.82
—
V
Note 1
Minimum Input Voltage 
After Start-Up
VIN
—
0.35
—
V
Note 1
Output Voltage Adjust
Range
VOUT
1.8
5.5
V
VOUT  VIN; Note 2
Maximum Output Current
IOUT
150
—
mA
125
—
1.5V VIN, 3.3V VOUT
225
—
3.3V VIN, 5.0V VOUT
Input Characteristics
100
1.2V VIN, 2.0V VOUT
Feedback Voltage
VFB
1.1931
1.23
1.2669
V
Feedback Input 
Bias Current
IVFB
—
10
—
nA
IQOUT
—
4.0
8
µA
IOUT = 0 mA, device is not
switching, EN = VIN = 4.0V,
VOUT = 5.0V, 
does not include feedback
divider current; Note 3
VIN Sleep Current
IQIN
—
1.0
2.3
µA
IOUT = 0 mA, EN = VIN;
Note 3, Note 5
No Load Input Current
IIN0
—
14
25
µA
IOUT = 0 mA, 
device is switching
Quiescent Current – 
Shutdown
IQSHDN
—
0.6
—
µA
VOUT = EN = GND; 
includes N-Channel and
P-Channel Switch Leakage
VOUT Quiescent Current
Note 1:
2:
3:
4:
5:
3.3 k resistive load, 3.3VOUT (1 mA).
For VIN > VOUT, VOUT will not remain in regulation.
IQOUT is measured at VOUT, VOUT is external supplied for VOUT > VIN (device is not switching), IQIN is
measured at VIN pin during Sleep period, no load.
220 resistive load, 3.3VOUT (15 mA).
Determined by characterization, not production tested.
 2013 Microchip Technology Inc.
DS25173A-page 3
MCP16251/2
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VIN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT = 0 mA, 
TA = +25°C. Boldface specifications apply over the TA range of -40oC to +85oC.
Sym
Min
Typ
Max
Units
NMOS Switch Leakage
Parameters
INLK
—
0.15
—
µA
VIN = VSW = 5V 
VOUT = 5.5V
VEN = VFB = GND
PMOS Switch Leakage
IPLK
—
0.15
—
µA
VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch 
ON Resistance
RDS(ON)N
—
0.45
—

VIN = 3.3V, ISW = 100 mA
PMOS Switch 
ON Resistance
RDS(ON)P
—
0.9
—

VIN = 3.3V, ISW = 100 mA
NMOS Peak 
Switch Current Limit
IN(MAX)
—
650
—
mA
VOUT Accuracy
VOUT%
-3
—
+3
%
Line Regulation
(VOUT/VOUT)
/VIN
-0.4
0.3
0.4
%/V
Load Regulation
VOUT/VOUT
-1.5
0.1
1.5
%
IOUT = 25 mA to 100 mA;
VIN = 1.5V
Maximum Duty Cycle
DCMAX
87
89
91
%
Note 5
Switching Frequency
fSW
425
500
575
EN Input Logic High
VIH
70
—
—
EN Input Logic Low
Conditions
Note 5
Includes Line and Load
Regulation; VIN = 1.5V
VIN = 1.5V to 2.8V
IOUT = 50 mA
kHz
%of VIN IOUT = 1 mA
%of VIN IOUT = 1 mA
VIL
—
—
20
IENLK
—
5.0
—
nA
VEN = 5V
Soft Start Time
tSS
—
—
1.5
ms
EN Low to High, 
90% of VOUT; Note 4, Note 5
Thermal Shutdown 
Die Temperature
TSD
—
160
—
C
IOUT = 20 mA, VIN > 1.4V
TSDHYS
—
20
—
C
EN Input Leakage Current
Die Temperature 
Hysteresis
Note 1:
2:
3:
4:
5:
3.3 k resistive load, 3.3VOUT (1 mA).
For VIN > VOUT, VOUT will not remain in regulation.
IQOUT is measured at VOUT, VOUT is external supplied for VOUT > VIN (device is not switching), IQIN is
measured at VIN pin during Sleep period, no load.
220 resistive load, 3.3VOUT (15 mA).
Determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT = 0 mA.
Parameters
Sym
Min
Typ
Max
Units
Operating Temperature Range
TJ
-40
—
+85
°C
Storage Temperature Range
TA
-65
—
+150
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Thermal Resistance, 5L-SOT-23
JA
—
220.7
—
°C/W
Thermal Resistance, 8L-2x3 TDFN
JA
—
52.5
—
°C/W
Conditions
Temperature Ranges
Steady State
Transient
Package Thermal Resistances
DS25173A-page 4
EIA/JESD51-3 Standard
 2013 Microchip Technology Inc.
MCP16251/2
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = EN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 0 mA,
TA = +25°C, SOT-23 package.
100
VOUT = 3.3V
RTOP = 1.69 Mȍ
RBOT = 1.0 Mȍ
8
VOUT = 2.0V
95
90
Efficiency (%)
Quies
scent Current (uA)
10
6
4
85
80
75
VIN = 1.5V
70
65
2
VIN = 1.2V
60
VIN = 0.9V
55
0
50
-40
-25
-10
5
20
35
50
Ambient Temperature (°C)
FIGURE 2-1:
Temperature.
65
80
1
VOUT IQ vs. Ambient
FIGURE 2-4:
IOUT.
1000
2.0V VOUT Efficiency vs.
100
VOUT = 3.3V
RTOP = 1.69 Mȍ
RBOT = 1.0 Mȍ
25
90
20
VIN = 1.2V
15
VOUT = 3.3V
95
Efficiency (%)
No Load Input Current (µA)
100
IOUT (mA)
30
VIN = 1.5V
10
VIN = 3.0V
85
80
VIN = 2.5V
75
VIN = 1.2V
70
65
5
VIN = 0.9V
60
0
55
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
Ambient Temperature (°C)
FIGURE 2-2:
Temperature.
No Load Input Current vs.
35
25
20
15
VOUT = 5.0V
10
VOUT = 2.0V
100
1000
IOUT (mA)
FIGURE 2-5:
IOUT.
3.3V VOUT Efficiency vs.
VOUT = 5.0V
95
5
10
100
RBOT = 1.0 Mȍ
30
1
Efficiency (%)
No Load Input Current (µA)
10
VIN = 3.6V
90
85
VIN = 2.5V
80
75
VIN = 1.2V
VIN = 1.8V
70
VOUT = 3.3V
65
0
1
1.5
FIGURE 2-3:
VIN.
2
2.5
3
3.5
Input Voltage (V)
4
4.5
No Load Input Current vs.
 2013 Microchip Technology Inc.
60
1
FIGURE 2-6:
IOUT.
10
IOUT (mA)
100
1000
5.0V VOUT Efficiency vs.
DS25173A-page 5
MCP16251/2
Note: Unless otherwise indicated, VIN = EN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 0 mA,
TA = +25°C, SOT-23 package.
500
3.33
Load Current (mA)
450
Outtput Voltage (V)
3.32
ILOAD = 1 mA
3.31
ILOAD = 10 mA
3.30
ILOAD = 50 mA
3 29
3.29
300
250
200
150
50
0
3.27
-40
-25
-10
5
20
35
50
65
Ambient Temperature (°C)
FIGURE 2-7:
Temperature.
0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3 3.6 3.9 4.2 4.5
Input Voltage (V)
80
3.3V VOUT vs. Ambient
FIGURE 2-10:
Maximum IOUT vs. VIN, After
Start-up, VOUT Maximum 5% Below Regulation
Point.
3.32
Switch
hing Frequency (kHz)
510
VIN = 1.2V
3.31
Ou
utput Voltage (V)
VOUT = 2.0V
350
100
3.28
VIN = 1.5V
3.30
3.29
3.28
VIN = 2.4V
2 4V
3.27
3.26
VIN = 0.9V
ILOAD = 20 mA
3.25
505
500
495
490
485
480
475
470
-40
-25
FIGURE 2-8:
Temperature.
-10
5
20
35
50
65
Ambient Temperature (°C)
80
3.3V VOUT vs. Ambient
-40
-25
-10
5
20
35
50
65
Ambient Temperature (°C)
FIGURE 2-11:
Temperature.
3.33
80
FOSC vs. Ambient
1.2
VOUT = 3.3V
TA = +85°C
1.1
In
nput Voltage (V)
3.32
Output Voltage (V)
VOUT = 5.0V
VOUT = 3.3V
400
3.31
TA = +25°C
3.30
3.29
3.28
TA = -40°C
ILOAD = 20 mA
1
0.9
08
0.8
ILOAD = 1 mA
0.7
3.27
ILOAD = 50 mA
3.26
1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8
Input Voltage (V)
FIGURE 2-9:
DS25173A-page 6
3.3V VOUT vs. VIN.
---- Electronic Load, CC
Resistive Load
0.6
-40
-25
-10
5
20
35
50
65
Ambient Temperature (°C)
80
FIGURE 2-12:
VIN Start-up vs.
Temperature into Resistive Load and Constant
Current.
 2013 Microchip Technology Inc.
MCP16251/2
Note: Unless otherwise indicated, VIN = EN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 0 mA,
TA = +25°C, SOT-23 package.
8
VOUT =1.8V
Switch
h Resistance (Ohms)
Input Voltage (V)
1.3
1.1
0.9
Startup
0.7
0.5
Shutdown
0.3
0
10
20
30 40 50 60
Load Current (mA)
70
80
P - Channel
6
5
4
3
N - Channel
2
1
0
90
FIGURE 2-13:
1.8VOUT Minimum Start-up
and Shutdown VIN into Resistive Load vs. IOUT.
7
0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
> VIN or VOUT
3.3 3.6 3.9 4.2
FIGURE 2-16:
N-Channel and P-Channel
RDSON vs. the maximum VIN or VOUT.
45
VOUT = 3.3V
40
Load Current (mA)
Input Voltage (V)
1.3
1.1
0.9
Startup
0.7
0.5
Shutdown
VOUT = 3.3V
30
VOUT = 2.0V
25
20
15
10
0.3
5
0
10
20
30 40 50 60 70
Load Current (mA)
80
90 100
FIGURE 2-14:
3.3VOUT Minimum Start-up
and Shutdown VIN into Resistive Load vs. IOUT.
0.8
1.2
1.6
2
2.4 2.8 3.2
Input Voltage (V)
3.6
4
4.4
FIGURE 2-17:
Average PFM/PWM
Threshold Current vs. VIN.
IOUT = 1 mA
1.7
Input Voltage (V)
VOUT = 5.0V
35
VOUT = 5.0V
1.5
VOUT 100 mV/div
AC Coupled
1.3
1.1
VSW
2 V/div
Startup
0.9
0.7
0.5
Shutdown
0.3
0
10
20
30 40 50 60 70
Load Current (mA)
80
90 100
FIGURE 2-15:
5.0VOUT Minimum Start-Up
and Shutdown VIN into Resistive Load vs. IOUT.
 2013 Microchip Technology Inc.
IL 100 mA/div
200 µs/div
FIGURE 2-18:
MCP16251 3.3V VOUT PFM
Mode Waveforms.
DS25173A-page 7
MCP16251/2
Note: Unless otherwise indicated, VIN = EN = 1.5V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 0 mA,
TA = +25°C, SOT-23 package.
VOUT 50 mV/div
AC Coupled
IOUT = 50 mA
ISTEP = 1 mA to 75 mA
PFM Mode
PWM Mode
VOUT 100 mV/div
AC Coupled
VSW
2 V/div
IOUT 50 mA/div
IL 200 mA/div
400 µs/div
2 µs/div
FIGURE 2-19:
MCP16251 3.3V VOUT
PWM Mode Waveforms
IOUT = 15 mA
VOUT = 3.3V
VIN = 1.5V
FIGURE 2-22:
MCP16251 3.3V VOUT Load
Transient Waveforms.
IOUT = 20 mA
VSTEP from 1V to 2.5V
VIN
1 V/div
VEN
2 V/div
VOUT 100 mV/div
AC Coupled
VOUT 2 V/div
1 ms/div
400 µs/div
FIGURE 2-20:
3.3V Start-up After Enable.
IOUT = 15 mA
FIGURE 2-23:
Waveforms.
3.3V VOUT Line Transient
IOUT = 0 mA
VOUT 2V/div
VOUT 100 mV/div
AC Coupled
VIN
1 V/div
IL 100 mA/div
IL 20 mA/div
400 µs/div
FIGURE 2-21:
VIN = VENABLE.
DS25173A-page 8
3.3V Start-Up When
100 ms/div
FIGURE 2-24:
MCP16251 3.3V No Load
VOUT PFM Mode Output Ripple.
 2013 Microchip Technology Inc.
MCP16251/2
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP16251/2
SOT-23
MCP16251/2
2x3 TDFN
3.1
Symbol
Description
4
1
VFB
—
2
SGND
Feedback Voltage Pin
Signal Ground Pin
—
3
PGND
Power Ground Pin
3
4
EN
Enable Control Input Pin
Switch Node, Boost Inductor Input Pin
1
5
SW
—
6
VOUTP
Output Voltage Power Pin
—
7
VOUTS
Output Voltage Sense Pin
6
8
VIN
Input Voltage Pin
—
9
EP
Exposed Thermal Pad (EP); must be connected to VSS.
2
—
GND
Ground Pin
5
—
VOUT
Output Voltage Pin
Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. Feedback voltage will
typically be 1.23V, with the output voltage in regulation.
3.2
Signal Ground Pin (SGND)
The signal ground pin is used as a return for the
integrated VREF and error amplifier. In the 2x3 TDFN
package, the SGND and power ground (PGND) pins are
connected externally.
3.3
Power Ground Pin (PGND)
The power ground pin is used as a return for the highcurrent N-Channel switch. In the 2x3 TDFN package,
the PGND and signal ground (SGND) pins are connected
externally.
3.4
Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching and lower quiescent current
while disabled. A logic high (>70% of VIN) will enable
the regulator output. A logic low (<20% of VIN) will
ensure that the regulator is disabled.
3.6
Output Voltage Power Pin (VOUTP)
The output voltage power pin connects the output voltage to the switch node. High current flows through the
integrated P-Channel and out of this pin to the output
capacitor and output. In the 2x3 TDFN package, VOUTS
and VOUTP are connected externally.
3.7
Output Voltage Sense Pin (VOUTS)
The output voltage sense pin connects the regulated
output voltage to the internal bias circuits. In the 2x3
TDFN package, VOUTS and VOUTP are connected
externally.
3.8
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a 4.7 µF
minimum capacitor.
3.9
Switch Node Pin (SW)
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current and can be as
high as 650 mA typical peak. The integrated
N-Channel switch drain and integrated P-Channel
switch source are internally connected at the SW node.
Exposed Thermal Pad (EP)
There is no internal electrical connection between the
Exposed Thermal Pad (EP) and the PGND and SGND
pins. They must be connected to the same potential on
the Printed Circuit Board (PCB).
3.10
3.5
Power Supply Input Voltage Pin (VIN)
Ground Pin (GND)
The ground or return pin is used for circuit ground connection. Length of trace from input cap return, output
cap return and GND pin should be made as short as
possible to minimize noise on the GND pin. In the
SOT23-6 package, a single ground pin is used.
3.11
Output Voltage Pin (VOUT)
The output voltage pin connects the integrated
P-Channel MOSFET to the output capacitor. The feedback voltage divider is also connected to the VOUT pin
for voltage regulation.
 2013 Microchip Technology Inc.
DS25173A-page 9
MCP16251/2
4.0
DETAILED DESCRIPTION
4.1.2
4.1
Device Overview
The MCP16251 device incorporates a true output
disconnect feature. With the EN pin pulled low, the
output of the MCP16251 is isolated or disconnected
from the input by turning off the integrated P-Channel
switch and removing the switch bulk diode connection.
This removes the DC path typical in boost converters,
which allows the output to be disconnected from the
input. During this mode, less than 0.6 µA of current is
consumed from the input (battery). True output disconnect does not discharge the output; the output voltage
is held up by the external COUT capacitance.
The MCP16251/2 family of devices is capable of low
start-up voltage and delivers high efficiency over a wide
load range for single-cell, two-cell, three-cell alkaline,
NiMH, NiCd and single-cell Li-Ion battery inputs. A high
level of integration lowers total system cost, eases
implementation and reduces board area. The devices
feature low quiescent current, low start-up voltage,
adjustable output voltage, PWM/PFM mode operation,
integrated synchronous switch, internal compensation,
low noise anti-ring control, inrush current limit and soft
start. There are two options for the MCP16251/2 family:
True Output Disconnect and Input-to-Output Bypass
(see Table 4-1).
4.1.1
PFM/PWM OPERATION
The MCP16251/2 devices use an automatic switchover
from PWM to PFM mode for light load conditions, to
maximize efficiency over a wide range of output
current. During PFM mode, a controlled peak current is
used to pump the output up to the threshold limit. While
operating in PFM or PWM mode, the P-Channel switch
is used as a synchronous rectifier, turning off when the
inductor current reaches 0 mA to maximize efficiency.
In PFM mode, a comparator is used to terminate
switching when the output voltage reaches the upper
threshold limit. Once switching has terminated, the
output voltage will decay or coast down. During this
period, which is called Sleep period, 1 µA is typically
consumed from the input source, which keeps power
efficiency high at light load. PWM/PFM mode has
higher output ripple voltage than PWM mode, and
variable frequency. The PFM mode frequency is a
function of input voltage, output voltage and load. While
in PFM mode, the boost converter periodically pumps
the output with a fixed switching frequency of 500 kHz.
Figure 2-17 represents the load current versus input
voltage for the PFM-to-PWM threshold.
DS25173A-page 10
4.1.3
TRUE OUTPUT DISCONNECT
OPTION
INPUT BYPASS OPTION
The MCP16252 device incorporates the input-to-output
bypass shutdown option. With the EN input pulled low,
the output is connected to the input using the internal
P-Channel MOSFET. In this mode, the current draw
from the input (battery) is less than 0.6 µA with no load.
The Input Bypass mode is used when the input voltage
range is high enough for the load to operate in Standby
or Low IQ mode. When a higher regulated output
voltage is necessary to operate the application, the EN
input is pulled high, enabling the boost converter.
In this mode, the current through the P-Channel
MOSFET must not be higher than 400 mA.
TABLE 4-1:
Part
Number
MCP16251
MCP16252
PART NUMBER SELECTION
True Output
Disconnect
Input to Output
Bypass
X
X
 2013 Microchip Technology Inc.
MCP16251/2
4.2
Functional Description
Figure 4-1 depicts the functional block diagram of the
MCP16251/2.
The MCP16251/2 is a compact, high-efficiency, fixed
frequency, step-up DC-DC converter that provides an
easy-to-use power supply solution for applications
powered by either one-cell, two-cell, or three-cell
alkaline, NiCd, or NiMH, or one-cell Li-Ion or
Li-Polymer batteries.
VOUT
Internal
BIAS
VIN
IZERO
Direction
Control
.3V SOFT-START
SW
Gate Drive
and
Shutdown
Control
Logic
EN
GND
Oscillator
0V
ILIMIT
ISENSE
Slope
Compensation
S
PWM/PFM
Logic
1.23V
VFB
EA
FIGURE 4-1:
MCP16251/2 Block Diagram.
 2013 Microchip Technology Inc.
DS25173A-page 11
MCP16251/2
4.2.1
LOW-VOLTAGE START-UP
The MCP16251/2 is capable of starting from a low input
voltage. Start-up voltage is typically 0.82V for a 3.3V
output and 1 mA resistive load.
When enabled, the internal start-up logic turns the
rectifying P-Channel switch on until the output
capacitor is charged to a value close to the input
voltage. The rectifying switch is current limited during
this time. After charging the output capacitor to the
input voltage, the device starts switching. If the output
voltage is below 60-70% of the desired VOUT, the
device runs in open-loop with a fixed duty cycle of
70-75% until the output reaches this threshold. During
start-up, the inductor peak current is limited (see
Figure 2-21) to allow a correct start from a weak power
supply, such as a solar cell, small coin battery or a
discharged battery. Once the output voltage reaches
60-70% of the desired VOUT, normal closed-loop PWM
operation is initiated.
The MCP16251/2 charges an internal capacitor with a
very weak current source. The voltage on this capacitor, in turn, slowly ramps the current limit of the boost
switch to its nominal value. The soft-start capacitor is
completely discharged in the event of a commanded
shutdown or a thermal shutdown.
There is no undervoltage lockout feature for the
MCP16251/2. The device will start switching at the
lowest voltage possible, and run down to the lowest
possible voltage. For a minimum 0.82V typical input,
the device starts with regulated output under 1 mA
resistive load. Real world loads are mostly nonresistive and allow device start-up at lower values,
down to 0.65V. Working at very low input voltages may
result in “motor-boating” for deeply discharged
batteries.
4.2.2
PFM/PWM MODE
The MCP16251/2 devices are capable of automatically
operating in normal PWM mode and PFM mode to
maintain high efficiency at all loads. In PFM mode, the
output ripple has a variable frequency component that
changes with the input voltage and output current. The
value of the output capacitor changes the low
frequency component ripple. Output ripple peak-topeak values are not affected by the output capacitor.
With no load, the input current drawn from the battery
is typically 14 µA. The device itself is powering from the
output after start-up, the quiescent current drawn from
output being less than 4 µA (typical, without feedback
resistors divider current).
PFM operation is initiated if the output load current falls
below an internally programmed threshold. The output
voltage is continuously monitored. When the output
voltage drops below its nominal value, PFM operation
pulses one or several times to bring the output back
into regulation. If the output load current rises above
the upper threshold, the MCP16251 enters smoothly
into the PWM mode.
DS25173A-page 12
In PWM operation, the MCP16251/2 operates as a
fixed frequency, synchronous boost converter. The
switching frequency is internally maintained with a precision oscillator, typically set to 500 kHz. By operating
in PWM-only mode, the output ripple remains low and
the frequency is constant.
Lossless current sensing converts the peak current
signal to a voltage to sum with the internal slope
compensation signal. This summed signal is compared
to the voltage error amplifier output to provide a peak
current control command for the PWM signal. The
slope compensation is adaptive to the input and output
voltage. Therefore, the converter provides the proper
amount of slope compensation to ensure stability, but is
not excessive, which causes a loss of phase margin.
The peak current limit is set to 650 mA typical.
4.2.3
ADJUSTABLE OUTPUT VOLTAGE
AND MAXIMUM OUTPUT CURRENT
The MCP16251/2 output voltage is adjustable with a
resistor divider over a 1.8V minimum to 5.5V maximum
range. High value resistors are recommended to minimize quiescent current to keep efficiency high at light
loads. When an application runs below -20oC, smaller
values for feedback resistors should be used to avoid
any alteration of VOUT, because of the leakage path on
PCBs.
The maximum device output current is dependent upon
the input and output voltage. For example, to ensure a
100 mA load current for VOUT = 3.3V, a minimum of
1.1 – 1.2V input voltage is necessary. If an application
is powered by one Li-Ion battery (VIN from 3.0V to
4.2V), the maximum load current the MCP16251/2 can
deliver is close to 200 mA at 5.0V output (Figure 2-10).
4.2.4
ENABLE
The enable pin is used to turn the boost converter on
and off. The enable threshold voltage varies with input
voltage. To enable the boost converter, the EN voltage
level must be greater than 70% of the VIN voltage. To
disable the boost converter, the EN voltage must be
less than 20% of the VIN voltage.
4.2.5
INTERNAL BIAS
The MCP16251/2 gets its start-up bias from VIN. Once
the output exceeds the input, bias comes from the
output. Therefore, once started, operation is
completely independent of VIN. Operation is limited
only by the output power level and the input source
series resistance. Once started, the output will remain
in regulation down to 0.35V input with 1 mA output
current for low source impedance inputs.
 2013 Microchip Technology Inc.
MCP16251/2
4.2.6
INTERNAL COMPENSATION
The error amplifier, with its associated compensation
network, completes the closed-loop system by
comparing the output voltage to a reference at the
input of the error amplifier, and feeding the amplified
and inverted signal to the control input of the inner
current loop. The compensation network provides
phase leads and lags at appropriate frequencies to
cancel excessive phase lags and leads of the power
circuit. All necessary compensation components and
slope compensation are integrated.
4.2.7
SHORT CIRCUIT PROTECTION
Unlike most boost converters, the MCP16251/2 allows
its output to be shorted during normal operation. The
internal current limit and overtemperature protection
limit excessive stress and protect the device during
periods
of
short
circuit,
overcurrent
and
overtemperature. While operating in Input-to-output
Bypass mode, the P-Channel current limit is inhibited to
minimize quiescent current.
4.2.8
LOW NOISE OPERATION
The MCP16251/2 integrates a low noise anti-ring
switch that damps the oscillations typically observed at
the switch node of a boost converter when operating in
the discontinuous inductor current mode. This removes
the high frequency radiated noise.
4.2.9
OVERTEMPERATURE
PROTECTION
Overtemperature protection circuitry is integrated in the
MCP16251/2 devices. This circuitry monitors the
device junction temperature and shuts the output off if
the junction temperature exceeds the typical +160oC. If
this threshold is exceeded, the device will automatically
restart once the junction temperature drops by 20oC.
During the thermal shutdown, the device is periodically
looking for temperature; once the temperature of the
die drops, the device restarts. Because the device
takes its bias from the output (to achieve lower IQ current) while in thermal shutdown state, there is no low
reference band gap and the output may be higher than
zero for inputs below 1.4V typical. The soft start is reset
during an overtemperature condition.
 2013 Microchip Technology Inc.
DS25173A-page 13
MCP16251/2
5.0
APPLICATION INFORMATION
5.1
Typical Applications
The MCP16251/2 synchronous boost regulator
operates over a wide input voltage and output voltage
range. The power efficiency is high for several decades
of load range. Output current capability increases with
the input voltage and decreases with the increasing
output voltage. The maximum output current is based
on the N-Channel peak current limit. Typical
characterization curves in this data sheet are
presented to display the typical output current
capability.
The internal Error Amplifier is a transconductance type;
its gain is not related to the resistors’ value. There are
some potential issues with higher value resistors. For
small surface mount resistors, environment contamination can create leakage paths that significantly change
the resistor divider ratio and change the output voltage
tolerance. Designers should use resistors that are
larger than 1 M with precaution; they can be used on
limited temperature range (-20 to +85oC). For a lower
temperature (down to -40oC), resistors from
Examples 1 or 2 are calculated as following:
EXAMPLE 4:
VOUT = 2.0V
5.2
Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP16251/2, use Equation 5-1, where RTOP is
connected to VOUT, RBOT is connected to GND and
both are connected to the VFB input pin.
EQUATION 5-1:
R TOP
V OUT
= R BOT   ------------- – 1
V FB
EXAMPLE 1:
VOUT = 2.0V
VFB = 1.23V
RBOT = 1 M
RTOP = 626.01 kwith a standard value of
620 k VOUT is 1.992V)
EXAMPLE 2:
VOUT = 3.3V
VFB = 1.23V
RBOT = 1 M
RTOP = 1.68 Mwith a standard value of
1.69 M VOUT is 3.308V)
EXAMPLE 3:
VOUT = 5.0V
VFB = 1.23V
RBOT = 1 M
RTOP = 3.065 M (with a standard value of
3.09 M VOUT is 5.03V)
VFB = 1.23V
RBOT = 309 k
RTOP = 193.44 kwith a standard value of
191 k VOUT is 1.99V)
EXAMPLE 5:
VOUT = 3.3V
VFB = 1.23V
RBOT = 309 k
RTOP = 520.024 kwith a standard value of
523 k VOUT is 3.311V)
Smaller feedback resistor values will increase the
quiescent current drained from the battery by a few µA,
but will result in good regulation over the entire
temperature range.
For boost converters, the removal of the feedback
resistors during operation must be avoided. In this
case, the output voltage will increase above the
absolute maximum output limits of the MCP16251/2
and damage the device (for additional informations,
see AN1337 Application Note).
5.3
Input Capacitor Selection
The boost input current is smoothed by the boost
inductor, reducing the amount of filtering necessary at
the input. Some capacitance is recommended to
provide decoupling from the source. Low ESR X5R or
X7R are well suited, since they have a low temperature
coefficient and small size. For most applications,
4.7 µF of capacitance is sufficient at the input. For highpower applications that have high-source impedance
or long leads, connecting the battery to the input 10 µF
of capacitance is recommended. Additional input
capacitance can be added to provide a stable input
voltage.
Table 5-1 contains the recommended range for the
input capacitor value.
DS25173A-page 14
 2013 Microchip Technology Inc.
MCP16251/2
5.4
Output Capacitor Selection
The output capacitor helps provide a stable output
voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this
application. Using other capacitor types (aluminum or
tantalum) with large ESR has impact for the converter's
efficiency (see AN1337) and maximum output power.
The MCP16251/2 is internally compensated, so the
output capacitance range is limited. See Table 5-1 for
the recommended output capacitor range.
An output capacitance higher than 10 µF adds a better
load step response and high-frequency noise
attenuation, especially while stepping from light current
loads (PFM mode) to heavy current loads (PWM
mode). A minimum of 20 µF output capacitance is
mandatory while the output drives load steps between
heavy load levels. In addition, 2 x 10 µF output
capacitors ensure a better recovery of the output after
a short period of overloading.
While the N-Channel switch is on, the output current is
supplied by the output capacitor COUT. The amount of
output capacitance and equivalent series resistance
will have a significant effect on the output ripple
voltage. While COUT provides load current, a voltage
drop also appears across its internal ESR that results
in ripple voltage.
EQUATION 5-2:
I OUT
5.5
Inductor Selection
The MCP16251/2 is designed to be used with small
surface mount inductors; the inductance value can
range from 2.2 µH to 6.8 µH. An inductance value of
4.7 µH is recommended to achieve a good balance
between the inductor size, converter load transient
response and minimized noise.
TABLE 5-2:
Part
Number
MCP16251/2 RECOMMENDED
INDUCTORS
Value DCR
(µH)  (typ)
ISAT
(A)
Size
WxLxH (mm)
Coiltronics®
SD3112
4.7
0.246
0.80
3.1x3.1x1.2
SD3114
4.7
0.251
1.14
3.1x3.1x1.4
SD3118
4.7
0.162
1.31
3.8x3.8x1.2
SD25
4.7
0.0467
1.83
5.0x5.0x2.5
WE-TPC
Type Tiny
4.7
0.100
1.7
2.8x2.8x2.8
WE-TPC
Type TH
4.7
0.200
0.8
2.8x2.8x1.35
WE-TPC
Type S
4.7
0.105
0.90
3.8x3.8x1.65
WE-TPC
Type M
4.7
0.082
1.65
4.8x4.8x1.8
Wurth® Group
Sumida Corporation
dV
= C OUT   -------
dt
CMD4D06
4.7
0.216
0.75
3.5x4.3x2
CDRH4D
4.7
0.09
0.800
4.6x4.6x1.5
XPL2010
4.7
0.336
0.75
1.9x2x1.0
ME3220
4.7
0.190
1.5
2.5x3.2x2.0
XFL3010
4.7
0.217
1.1
3x3x1.0
XFL3012
4.7
0.143
1.0
3x3x1.2
Coilcraft
Where:
dV = the ripple voltage and
dt - ON time of the N-Channel switch
(D x 1/FSW, D is duty cycle)
EPL3012
4.7
0.165
1.0
3x3x1.3
Table 5-1 contains the recommended range for the
input and output capacitor value.
LPS4018
4.7
0.125
1.8
4x4x1.8
XFL4020
4.7
0.052
2.0
4x4x2.1
TABLE 5-1:
TDK Corporation
CAPACITOR VALUE RANGE
CIN
COUT
Minimum
4.7 µF
10 µF
Maximum
none
47 µF
 2013 Microchip Technology Inc.
VLS3015ET
-4R7M
4.7
0.113
1.1
3x3x1.5
B82462
G4472M
4.7
0.04
1.8
6x6x3
B82462
A4472M
4.7
0.08
2.8
6x6x3
DS25173A-page 15
MCP16251/2
EQUATION 5-3:
Several parameters are used to select the correct
inductor: maximum rated current, saturation current
and copper resistance (ESR). For boost converters, the
inductor current can be much higher than the output
current. The lower the inductor ESR, the higher the
efficiency of the converter, a common trade-off in size
versus efficiency.
OUT  I OUT
V
–  V OUT  I OUT  = PDis
----------------------------- Efficiency-
The difference between the first term, input power, and
the second term, power delivered, is the internal
MCP16251/2’s power dissipation. This is an estimate
assuming that most of the power lost is internal to the
MCP16251/2 and not CIN, COUT and the inductor.
There is some percentage of power lost in the boost
inductor, with very little loss in the input and output
capacitors. For a more accurate estimation of internal
power dissipation, subtract the IINRMS2 x LESR power
dissipation.
The saturation current typically specifies a point at
which the inductance has rolled off a percentage of the
rated value. This can range from a 20% to 40%
reduction in inductance. As the inductance rolls off, the
inductor ripple current increases, as does the peak
switch current. It is important to keep the inductance
from rolling off too much, causing switch current to
reach the peak limit.
5.6
Thermal Calculations
5.7
The MCP16251/2 is available in two different packages
(SOT-23-6 and 2 x 3 TDFN-8). By calculating the
power dissipation and applying the package thermal
resistance (JA), the junction temperature is estimated.
The maximum continuous junction temperature rating
for the MCP16251/2 family of devices is +125oC.
PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry, and switching
power supplies are no different. When wiring the
switching high current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors be placed as close as possible to
the MCP16251/2 to minimize the loop area.
To quickly estimate the internal power dissipation for
the switching boost regulator, an empirical calculation
using measured efficiency can be used. Given the
measured efficiency, the internal power dissipation is
estimated by Equation 5-3.
The feedback resistors and feedback signal should be
routed away from the switching node and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
Via to GND Plane
RBOT RTOP
+VOUT
+VIN
L
CIN
MCP1625X
1
GND
FIGURE 5-1:
DS25173A-page 16
COUT
GND
Via for Enable
MCP16251/2 SOT-23-6 Recommended Layout.
 2013 Microchip Technology Inc.
MCP16251/2
Wired on Bottom
Plane
L
+VIN
+VOUT
CIN
COUT
GND
MCP1625X
RTOP
1
RBOT
Enable
GND
FIGURE 5-2:
MCP16251/2 TDFN-8 Recommended Layout.
 2013 Microchip Technology Inc.
DS25173A-page 17
MCP16251/2
6.0
TYPICAL APPLICATION CIRCUITS
L1
4.7 µH
Manganese Lithium
Dioxide Button Cell
VOUT
5.0V @ 5 mA
SW V
OUT
+
2.0V to 3.2V
-
VIN
CIN
4.7 µF
3.09 M
VFB
EN
COUT
10 µF
1 M
From PIC® MCU I/O
Note:
GND
For applications that can operate directly from the battery input voltage during Standby mode
and require a higher voltage during normal run mode, the MCP16252 device provides input-tooutput bypass, when disabled. Here, the PIC microcontroller is powered by the output of the
MCP16252. One of the microcontroller's I/O pins is used to enable and disable the MCP16252,
and to control its bias voltage. While in Shutdown mode, the MCP16252 input current is typically
0.6 µA.
FIGURE 6-1:
DS25173A-page 18
Manganese Lithium Coin Cell Application using I/O Bypass Mode.
 2013 Microchip Technology Inc.
MCP16251/2
NOTES:
 2013 Microchip Technology Inc.
DS25173A-page 19
MCP16251/2
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
Example:
6-Lead SOT-23
Part Number
Code
MCP16251T-I/CH
MBNN
MCP16252T-I/CH
MCNN
Example:
8-Lead TDFN (2x3x0.75)
Part Number
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS25173A-page 20
MB25
Code
MCP16251T-I/MNY
ABP
MCP16252T-I/MNY
ABQ
ABP
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( )
e3
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2013 Microchip Technology Inc.
MCP16251/2
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1
2
3
e
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 2013 Microchip Technology Inc.
DS25173A-page 21
MCP16251/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS25173A-page 22
 2013 Microchip Technology Inc.
MCP16251/2
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
4
N
E
E1
PIN 1 ID BY
LASER MARK
1
2
3
e
e1
D
A
A2
c
φ
L
A1
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
N
NOM
MAX
6
Pitch
e
0.95 BSC
Outside Lead Pitch
e1
1.90 BSC
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.45
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
I
0°
–
30°
Lead Thickness
c
0.08
–
0.26
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-028B
 2013 Microchip Technology Inc.
DS25173A-page 23
MCP16251/2
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS25173A-page 24
 2013 Microchip Technology Inc.
MCP16251/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2013 Microchip Technology Inc.
DS25173A-page 25
MCP16251/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS25173A-page 26
 2013 Microchip Technology Inc.
MCP16251/2
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 2013 Microchip Technology Inc.
DS25173A-page 27
MCP16251/2
NOTES:
DS25173A-page 28
 2013 Microchip Technology Inc.
MCP16251/2
APPENDIX A:
REVISION HISTORY
Revision A (March 2013)
• Original Release of this Document.
 2013 Microchip Technology Inc.
DS25173A-page 29
MCP16251/2
NOTES:
DS25173A-page 30
 2013 Microchip Technology Inc.
MCP16251/2
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
-X
/XX
Device
Tape
and Reel
Temperature
Range
Package
Device:
MCP16251T: Low Quiescent Current, PFM/PWM
Synchronous Boost Regulator, True Disconnect
Output Shutdown Option (Tape and Reel)
MCP16252T: Low Quiescent Current, PFM/PWM
Synchronous Boost Regulator, Input-to-Output
Bypass Shutdown Option (Tape and Reel)
Temperature Range:
I
Package:
CH = Plastic Small Outline Transistor (SOT-23), 6-lead
MNY= Lead Plastic Dual Flat, No Lead Package
(2x3x0.75 mm TDFN), 8-lead
*Y
=
Examples:
a)
MCP16251T-I/CH:
b)
MCP16251T-I/MNY:
a)
MCP16252T-I/CH:
b)
MCP16252T-I/MNY:
Tape and Reel,
Industrial Temperature,
6LD SOT-23 package
Tape and Reel,
Industrial Temperature,
8LD 2x3 TDFN package
Tape and Reel,
Industrial Temperature,
6LD SOT-23 package
Tape and Reel,
Industrial Temperature,
8LD 2x3 TDFN package
-40C to+85C(Industrial)
= Nickel palladium gold manufacturing designator.
 2013 Microchip Technology Inc.
DS25173A-page 31
MCP16251/2
NOTES:
DS25173A-page 32
 2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2013, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-122-8
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS25173A-page 33
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS25173A-page 34
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
11/29/11
 2013 Microchip Technology Inc.