Two-chip MicroCapacitance (MC) SIDACtor® Device RoHS ¨ 1 (T) 2 (G) 3 (R) This two-chip MicroCapacitance SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options are available. SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters VDRM Volts Part Number * VS Volts VDRM Volts Pins 1-2, 3-2 VS Volts Pins 1-3 VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps P0302AAMCL 6 25 12 50 4 5 800 2.2 50 P0602AAMCL 25 40 50 80 4 5 800 2.2 50 VS Volts VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps VDRM Volts Part Number * Pins 1-2, 3-2 Pins 1-3 P0602ACMCL 25 40 50 80 4 5 800 2.2 50 P1402ACMCL 58 77 116 154 4 5 800 2.2 150 P1602ACMCL 65 95 130 190 4 5 800 2.2 150 P2202ACMCL 90 130 180 260 4 5 800 2.2 150 P2702ACMCL 120 160 240 320 4 5 800 2.2 150 P3002ACMCL 140 180 280 360 4 5 800 2.2 150 P3602ACMCL 170 220 340 440 4 5 800 2.2 150 P4202ACMCL 190 250 380 500 4 5 800 2.2 150 P4802ACMCL 220 300 440 600 4 5 800 2.2 150 P6002ACMCL 275 350 550 700 4 5 800 2.2 150 * “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number. For surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. Surge Ratings in Amps Series IPP A 0.2x310 * 2x10 * 8x20 * 0.5x700 ** 2x10 ** 1.2x50 ** 10x160 * 10x160 ** 10x560 * 10x560 ** 5x320 * 9x720 ** Amps Amps Amps 10x360 * 10x1000 * 5x310 * ITSM 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz Amps Amps Amps 20 150 150 90 50 75 75 400 200 150 200 175 C 50 500 * Current waveform in µs ** Voltage waveform in µs www.littelfuse.com 3 - 48 Amps Amps di/dt Amps Amps Amps/µs 45 75 20 500 100 200 50 500 © 2006 Littelfuse • Telecom Design Guide Two-chip MicroCapacitance (MC) SIDACtor® Device Thermal Considerations Symbol Modified TO-220 Parameter Unit Operating Junction Temperature Range -40 to +150 °C TS Storage Temperature Range -65 to +150 °C 50 °C/W Thermal Resistance: Junction to Ambient RθJA PIN 1 Value TJ SIDACtor Devices Package PIN 3 PIN 2 Capacitance Values pF Pin 1-2 / 3-2 Tip-Ground, Ring-Ground Part Number pF Pin 1-3 Tip-Ring MIN MAX MIN MAX P0302AAMCL 25 55 15 35 P0602AAMCL 15 35 10 20 P0602ACMCL 25 45 10 25 P1402ACMCL 40 60 20 35 P1602ACMCL 35 55 20 35 P2202ACMCL 45 70 25 40 P2702ACMCL 40 60 20 35 P3002ACMCL 35 55 20 35 P3602ACMCL 35 50 15 30 P4202ACMCL 30 50 15 30 P4802ACMCL 30 45 15 30 P6002ACMCL 30 45 15 25 Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. Telecom Design Guide • © 2006 Littelfuse 3 - 49 www.littelfuse.com Two-chip MicroCapacitance (MC) SIDACtor® Device IPP – Peak Pulse Current – %IPP +I IT IS IH IDRM -V +V VT VDRM VS Peak Value 100 tr = rise time to peak value td = decay time to half value Waveform = tr x td 50 Half Value 0 0 tr td t – Time (µs) -I 14 12 10 IH 8 6 25 ˚C 4 2 IH (TC = 25 ˚C) tr x td Pulse Waveform Ratio of Percent of VS Change – % V-I Characteristics 0 -4 2.0 1.8 1.6 1.4 25 ˚C 1.2 1.0 0.8 0.6 0.4 -40 -20 0 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Case Temperature (TC) – ˚C 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Normalized VS Change versus Junction Temperature www.littelfuse.com Normalized DC Holding Current versus Case Temperature 3 - 50 © 2006 Littelfuse • Telecom Design Guide