Silicon Carbide Diodes

Innovations Embedded
Silicon Carbide
Schottky Barrier Diodes
Selection Guide
ROHM MarketingUSA
Presented by ROHM Semiconductor
Silicon Carbide Schottky Barrier Diodes
from ROHM Semiconductor
Choosing Silicon Carbide Instead of Silicon
Schottky barrier diodes (SBDs) have
the advantage of low forward losses
and negligible switching losses
compared to other diode technologies. But the narrow bandgap of
silicon (Si) SBDs limits their use to a
maximum voltage of around 200 V.
Si diodes that operate above 200 V
have higher VF and trr.
Silicon carbide (SiC) is a compound
semiconductor with superior power
characteristics to silicon, including a
bandgap approximately three times
greater, a dielectric breakdown
field 10 times higher, and a thermal
coefficient three times larger. These
characteristics make it ideal for
power electronics applications.
Today, the need for higher efficiency in end products is more critical
than ever. Although silicon power
products continue to see incremental improvements, devices based
on compound semiconductor
materials deliver significantly better
performance — and in some cases
not even possible with their silicon
counterparts.
This is certainly true for the most
basic components in power electronics: diodes and transistors.
Silicon carbide Schottky barrier
diodes have been available for more
than a decade but have not been
commercially viable until recently.
Volume production is now leading
to SiC’s acceptance in more and
more applications.
Legend
Si Schottky Barrier Diode
Si Super Fast Diode
Si Ultra Fast Diode
Si Fast Recovery (Epitaxial) Diode
Si Standard Recovery Diode
Silicon Carbide Schottky Barrier Diode
1.888.775.ROHM
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CNA110004_sg
Silicon Carbide Schottky Barrier Diodes
from ROHM Semiconductor
600V Diodes
n SCS106AGC, SCS108AGC, SCS110AGC, SCS112AGC, and SCS120AGC
The SCS1xxAGC series of 600 V silicon carbide
Schottky barrier diodes offers industry-leading low
forward voltage and fast recovery time. They maintain
low forward voltage (VF) over a wide operating
temperature range which results in lower power
dissipation under actual operating conditions. Low VF
minimizes switching loss and enables high switching
frequency, resulting in smaller passives and smaller
end-product form factors.
Applications
<
Power Factor Correction / SMPS
Solar Inverters
< Motor Drives
<
Important Features / Advantages
<
<
Extremely low switching loss
Excellent thermal conductivity and high operating temperature
eliminates or greatly reduces heat sink requirements
<
Reduced EMI emission
DESIGN
NOTE
SiC Performance Improvement over Si FRD
With an SiC Schottky barrier diode
(SBD), switching losses are reduced by
2/3 compared to a silicon fast recovery
diode (FRD).
(The Si FRD is used for comparison
since it has a comparable voltage rating to the SiC SBD.)
Part No.
Continuous
forward
Reverse
voltage (V) current (A)
SCS106AGC
SCS108AGC
SCS110AGC
SCS112AGC
SCS120AGC
1.888.775.ROHM
Forward
voltage (V)
VRM (typ)
VRM (max)
Reverse
current (µA)
IR (typ)
IR (max)
Total
Total
power
Capacitive Switching capacitance (pF)
dissipation (W) charge (nC) time (ns)
C
V = 1V/V = 600V
PD
QC
tC
Thermal
resistance
(°C/W)
Package
VRM
IF
Tj = 25°C/150°C
600
6
1.5/1.6
1.7
1.2/6
120
48
12
18
260/28
2.6
TO220AC 2L
600
8
1.5/1.6
1.7
1.6/8
160
52
15
15
345/38
2.4
TO220AC 2L
600
10
1.5/1.6
1.7
2.0/10
200
57
16
15
430/47
2.2
TO220AC 2L
600
12
1.5/1.6
1.7
2.4/12
240
80
22
16
516/56
1.6
TO220AC 2L
600
20
1.5/1.6
1.7
4.0/20
400
97
35
19
860/93
1.3
TO220AC 2L
Tj = 25°C/150°C
R
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Rth(j-c)
CNA110004_sg
ROHM Semiconductor USA, LLC
6815 Flanders Drive, Suite 150
San Diego, CA 92121
www.rohm.com/us | 1.888.775.ROHM
NOTE: For the most current product information, contact a ROHM sales representative in your area.
ROHM assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and
makes no representations that the circuits are free from patent infringement. Specifications subject to change without notice for the purpose
of improvement.
The products listed in this catalog are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment,
office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products
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© 2011 ROHM Semiconductor USA, LLC. Although every effort has been made to ensure accuracy, ROHM accepts no responsibility for
errors or omissions. Specifications and product availability may be revised without notice. No part of this document represents an offer or
contract. Industry part numbers, where specified, are given as an approximate comparative guide to circuit function only. Consult ROHM
prior to use of components in safety, health or life-critical systems. All trademarks acknowledged.
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