Innovations Embedded Sensors Ultra-Small Hall ICs for magnetic switch applications Mobile ROHM MarketingUSA Phones Notebook Computers PDAs Digital Cameras Selection Guide Hall Effect Switches from ROHM Semiconductor The demands for extended battery operation, greater reliability and increased performance devices are the ideal choice for a range of switch applications: features are driving the designs of Portable phone or PDA in or out of its carrying case Slide-open or closed on cell phone or camera mobile phones, notebook computers, video cameras, navigation systems and game controllers to use smaller, higher performance components. Front Flip phone or laptop cover open or closed Cell phone or tablet PC screen orientation Track wheel position on MP3 players, toys and games Ultra-small, hall effect, non-contact switches from ROHM Electronics can simplify and enhance your designs while offering the benefits of high-reliability and Actual size Back (×10 display) Wafer level CSP (VCSP50L1) ROHM’s advanced packaging options include the industry’s smallest BGA chipscale package as well as low-profile, ultra-small SMT package. low power consumption. These high High sensitivity for precise magnetic field detection CMOS output eliminates the need for an external resistor, resulting in lower power consumption Rohm’s Hall IC detects and converts magnetic fields emanating from magnets into electronic signals (voltages). The Hall element is integrated into a single chip. S-pole detection only N-pole detection only Both S- and N-pole detection Both S- and N-pole detection with polarity discrimination output CMOS output enables direct connection to the microcontroller, reducing current flow and power consumption. Magnetic fielddetecting output VDD Magnetic fielddetecting output (with reversing output) Both S- and N-pole outputs Low current consumption due to intermittent operation High accuracy offset cancellation for high efficiency OUT GND Ultra-small package contributes increased space savings ROHM’s Hall-effect magnetic switches ROHM’s Hall ICs integrate both the Hall element and detection circuit into a single chip. This, combined with the wafer level CSP, decreases mounting space significantly, contributing to end-product miniaturization. are fully integrated ICs that pack all of the required functions into a single chip. Magnetic fielddetecting output 1.888.775.ROHM www.rohmsemiconductor.com Magnetic fielddetecting output (with reversing output) CNA09014 Hall Effect Switches from ROHM Semiconductor Designed for Performance and Reliability Single-chip IC with built-in Hall element Eliminates wire-bonding reliability problems Low current consumption with CMOS output Eliminates the need for external pull-up resistor Intermittent operation for longer battery life Pulsed detection reduces average power consumption High detection sensitivity Integrated dynamic offset cancellation yields high performance in small package -40C to +85C Operating Range Assures worry-free operation under extreme conditions 8 kV ESD Withstand High reliability in real-world conditions Selections for Every Application Unipolar Operation These devices detect the presence of either a N-pole or S-pole magnetic field of sufficient strength, but not both. They offer the lowest power consumption. The output switches state when the magnetic field is removed Omnipolar Operation These devices detect the presence of either a N-pole or S-pole magnetic field eliminating the need to orient the magnet for detection. This can simplify the manufacturing process. The trade-off is slightly higher power consumption Polarity Discrimination These devices feature dual outputs, one switches state in the presence of a N-pole magnetic field, the other in the presence of a S-pole. Both outputs revert to the alternative state when the field is removed. These devices are used to detect the combination of operation (open/closed) and position (front/back) Bipolar Operation 1.888.775.ROHM These devices change output state whenever a magnetic field of the opposite polarity is detected. The output remains fixed in its current state if no magnetic field is present. Applications are in jog wheel or track ball movement detection. They have higher sampling rates and power consumption www.rohmsemiconductor.com CNA09014 Hall Effect Switches from ROHM Semiconductor Omnipolar Detection The application of bipolar detection Hall ICs simplifies product design, assembly and maintenance. These devices can detect both S-pole and N-pole magnetic fields. Magnet management is simplified since the Hall IC will operate properly regardless of magnet orientation. Outputs ‘Low’ once a magnetic field is detected Outputs ‘Low’ (OUT1) and ‘High’ (OUT2) once a magnetic field is detected (BU52015GUL) (BU52001GUL, BU52011HFV, BU52021HFV) S VDD N S-pole or N-pole magnetic field S-pole N-pole magnetic S-pole ororN-pole magnetic fieldfield Output Operation Timing Logic OUT Hall Element Output Operation N OUT1 Detection L Hall Element H Latch Reverse Output OUT1 Amp Comp Magnetic Flux B Density Dynamic Offset Cancel Sample & Hold Amp Magnetic Flux B Density 0 L Dynamic Offset Cancel H High Low High Low 0 Sample & Hold Detection Output OUT1 Timing Logic Output OUT Latch S VDD Comp Output Operation OUT2 Detection Low High H L GND Magnetic Flux B Density 0 Reverse output of OUT1 GND Polarity Discrimination Omnipolar detection Hall ICs with built-in polarity discrimination add the capability of both detecting the position and the orientation of the magnet — important in applications where the display orientation of the device can be rotated. Outputs ‘Low’ through OUT1 (only) when S-pole magnetic field is detected S S-pole magnetic field VDD magnetic field is detected N-pole magnetic field VDD OUT1 H Timing Logic Output OUT1 L 0 Hall Element Magnetic Flux B Density Latch Remains 'High' OUT2 Amp Sample & Hold Comp Output OUT2 Remains 'High' GND 1.888.775.ROHM 0 Magnetic Flux Density –B Latch Output operation Dynamic Offset Cancel Output operation H High Low Hall Element Outputs ‘Low’ through OUT2 (only) when N-pole N Output operation S-pole OUT1 Detection Output OUT1 Timing Logic H Dynamic Offset Cancel Amp Sample & Hold Output OUT2 Comp Output operation N-pole OUT2 Detection High Low H L 0 Magnetic Flux B Density GND www.rohmsemiconductor.com 0 Magnetic Flux Density –B CNA09014 Hall Effect Switches from ROHM Semiconductor Unipolar Detection For the most cost-effective and lowest power implementation, unipolar detection Hall ICs provide the answer. The trade off comes from the need to assure proper magnet orientation in the production process. GND Type that outputs ‘Low’ upon detection of N-pole magnetic field (BU52003GUL, BU52013HFV) N VDD N-pole Output remains High when an S-pole magnetic field is detected Timing Logic Output operation OUT Hall Element Output OUT Latch S VDD N-pole detected S-pole Timing Logic H High Low Hall Element Output Latch L Dynamic Offset Cancel Sample & Hold Amp 0 Comp Magnetic –B Flux Density Dynamic Offset Cancel Amp Sample & Hold Comp Output operation OUT H OUT Remains 'High' 0 B Magnetic flux density GND GND Bipolar (Latching) Detection Bipolar (latching) Hall ICs add the capability of detecting the dynamic movement of devices like jog wheels or track balls. Two of these devices are typically used to detect CW and CCW movement. Output changes when magnetic field alternates between S-pole to N-pole S to N N to S S N VDD Timing Logic S-pole detected Hall Element Output operation OUT Output OUT Latch High Low S Dynamic Offset Cancel Amp Sample & Hold Comp N Output remains latched if no pole detected 0 N-pole Detection To detect direction of motion, multiple Hall ICs are used: 2 required to detect CW/CCW GND 1.888.775.ROHM 4 required for Quadrature www.rohmsemiconductor.com CNA09014 Hall Effect IC Selection Guide Omnipolar Detection Hall ICs Detects both S-pole and N-pole magnetic fields and turns the output ON (active Low). Part Number Supply Voltage (V) Operating Magnetic Flux Density (mT) Hysteresis (mT) Pulse Driving Cycle (mS) Current Consumption (Typ.) (µA) Output Package BU52001GUL 2.40 - 3.3 ±3.7 0.8 50 8.0 CMOS VCSP50L1 BU52011HFV 1.65 - 3.3 ±3.0 0.9 50 5.0 CMOS HVSOF5 BU52015GUL* 1.65 - 3.3 ±3.0 0.9 50 5.0 CMOS VCSP50L1 *The BU52015GUL features reverse output BU52001GUL BU52011HFV BU52015GUL Polarity Discrimination Hall ICs Features two outputs to discriminate between N-pole and S-pole detection. Part Number Supply Voltage (V) Operating Magnetic Flux Density (mT) Hysteresis (mT) Pulse Driving Cycle (mS) Current Consumption (Typ.) (µA) Output Package BU52004GUL 2.40 - 3.3 ±3.7 0.8 50 8.0 CMOS VCSP50L1 BU52014HFV 1.65 - 3.3 ±3.0 0.9 50 5.0 CMOS HVSOF5 BU52004GUL BU52014HFV Key Order Guide Both S- and N-pole detection Magnetic field detection output CMOS output Both S- and N-pole detection with polarity discrimination output Magnetic field detection output (with reverse output Polarity discrimination output S-pole detection only Both S- and N-pole outputs Low current consumption N-pole detection only High accuracy offset cancel function built in for high sensitivity Chip Size Package type – thin and ultra-small Intermittent operation for low-power consumption Small surface-mount package 8kV ESD resistance 1.888.775.ROHM www.rohmsemiconductor.com Wide operating temperature range of -40C to +85C Operating power supply voltage CNA09014 Hall Effect IC Selection Guide Unipolar Detection Hall ICs Detects either N-pole or S-pole but not both. Part Number Supply Voltage (V) Operating Magnetic Flux Density (mT) Hysteresis (mT) Pulse Driving Cycle (mS) Current Consumption (Typ.) (µA) Output Package BU52002GUL 2.40 - 3.3 3.7 0.8 50 6.5 CMOS VCSP50L1 BU52003GUL 2.40 - 3.3 -3.7 0.8 50 6.5 CMOS VCSP50L1 BU52012HFV 1.65 - 3.3 3.0 0.9 50 3.5 CMOS HVSOF5 BU52013HFV 1.65 - 3.3 -3.0 0.9 50 3.5 CMOS HVSOF5 BU52002GUL BU52003GUL BU52012HFV BU52013GUL Bipolar (Latching) Detection Hall ICs Part Number Supply Voltage (V) Operating Magnetic Flux Density (mT) BU52040HFV 1.65 - 3.3 ±3.0 Features two outputs to discriminate between N-pole and S-pole detection. Hysteresis (mT) Pulse Driving Cycle (mS) Current Consumption (Typ.) (µA) Output Package ±6.0 500 300 CMOS HVSOF5 BU52013GUL Key Order Guide Both S- and N-pole detection Magnetic field detection output CMOS output Both S- and N-pole detection with polarity discrimination output Magnetic field detection output (with reverse output Polarity discrimination output S-pole detection only Both S- and N-pole outputs Low current consumption N-pole detection only High accuracy offset cancel function built in for high sensitivity Chip Size Package type – thin and ultra-small Intermittent operation for low-power consumption Small surface-mount package 8kV ESD resistance 1.888.775.ROHM www.rohmsemiconductor.com Wide operating temperature range of -40C to +85C Operating power supply voltage CNA09014 10145 Pacific Heights Blvd., Suite 1000 San Diego, CA 92121 www.rohmsemiconductor.com | 1.888.775.ROHM NOTE: For the most current product information, contact a ROHM sales representative in your area. ROHM assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representations that the circuits are free from patent infringement. Specifications subject to change without notice for the purpose of improvement. The products listed in this catalog are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. © 2009 ROHM Semiconductor USA, LLC. Although every effort has been made to ensure accuracy, ROHM accepts no responsibility for errors or omissions. Specifications and product availability may be revised without notice. No part of this document represents an offer or contract. Industry part numbers, where specified, are given as an approximate comparative guide to circuit function only. Consult ROHM prior to use of components in safety, health or life-critical systems. All trademarks acknowledged.