DN1154 Use of DGD2106 in IR2106 Applications Introduction The DGD2106 is a high-side/low-side gate driver IC capable of driving 600V MOSFET/IGBTs and has been designed to be a pin for pin, functionally compatible, drop in replacement to the IRS2106. However, for applications using the older IR2106 there may need to be a small change of BOM to best match the gate driver response. Differences between the DGD2106 and the IR2106 From the application perspective, the most significant differences in the specifications are rise/fall times and output current capability. Symbol Definition IO+ IO- Output high short circuit pulse current Output low short circuit pulse current tr tf Turn-on rise time Turn-off fall time Min 130 270 DGD2106 Typ 290 600 100 35 Max Min 120 250 220 80 IR2106 Typ 200 350 150 50 Max Units mA mA 220 80 ns ns Table 1: Specification Differences Between the DGD2106 and the IR2106 The DGD2106, being a faster gate driver IC than the IR2106, will turn-on and turn-off the MOSFET/IGBT more quickly. In some applications, this will translate to a more efficient system because of less switching losses. But in some driver circuits, the faster dV/dt and dI/dt could cause more overshoot, and potentially greater –VS undershoot, possibly causing a circuit to not function properly. Hence to use the DGD2106 in an IR2106 application with the aim of having a similar gate drive as the IR2106, the gate resistor would need to be increased to slow down the drive signal. Matching the Rise/Fall Time A typical gate driver half-bridge circuit can be seen in Figure 1. Often for the HO and LO gate drive a gate resistor is used (RGH and RGL). To increase rise/fall time, RGH and RGL are increased. Figure 1: DGD2106 in a typical half-bridge circuit DN1154 – Rev 1 1 of 3 www.diodes.com January 2016 © Diodes Incorporated DN1154 To best match the DGD2106 in an IR2106 application, match the rise/fall time of the DGD2106 with that of the IR2106 in that application. To show an example, using the circuit similar to Figure 1 except instead of the MOSFETs as load to the gate drive signal, a load capacitor (CL = 1000pF) was used. Figure 2: IR2106 with RGL = 3Ω, tr = 86ns Figure 3: DGD2106 with RGL = 3Ω, tr = 68ns Figure 4: DGD2106 with RGL = 100Ω, tr = 86ns Hence, by making the gate resistors (RGH and RGL) larger you will have similar rise and fall times and will decrease the chances of any unwanted effects due to the higher dV/dt and dI/dt. In another driver circuit the value may be greater or less than 100 Ω, depending on initial gate resistor value and MOSFET gate capacitance. DN1154 – Rev 1 2 of 3 www.diodes.com January 2016 © Diodes Incorporated DN1154 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DN1154 – Rev 1 3 of 3 www.diodes.com January 2016 © Diodes Incorporated