Preliminary Data Sheet No. PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 575V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) • Undervoltage lockout • 3.3V, 5V and 15V input logic compatible • Metal heatsink back for improved PD Product Summary VIN (max) 575V PD (TA = 25°C) 3.0W VCE(ON) typ 3.0V Package Description The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The frontend features an independent high and low side driver in phase with the logic compatible input signals. The output features two IGBT’s in a halfbridge configuration. Propagation delays for the high and low side power IGBT’s are matched to simplify use. The device can operate up to 575 volts. www.irf.com 7 Pin 1 IR062HD4C10U-P2 IR082HD4C10U-P2 Typical Connections HV DC Bus VIN IR062HD4C10U-P2 Vcc 1 H IN 2 L IN 3 Vcc VB H IN VI N L IN VO 6 9 7 TO LOAD COM 4 COM Please note this info sheet contains advance information which may change before the product is released to production. HV DC Bus VIN IR082HD4C10U-P2 Vcc 1 H IN 2 L IN 3 Vcc VB H IN VI N L IN VO 6 9 7 TO LOAD COM 4 COM Please note this info sheet contains advance information which may change before the product is released to production. 2 www.irf.com IR062HD4C10U-P2 IR082HD4C10U-P2 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VIN High voltage supply VB High side floating supply absolute voltage VO VIH/VIL Min. Max. - 0.3 575 VO -0.3 VO+ 25 Half-bridge output voltage -0.3 VIN+ 0.3 Vcc + 0.3 Units V V Logic input voltage (HIN & LIN) - 0.3 VCC Low side and logic fixed supply voltage -0.3 25 V dV/dt Peak diode recovery dv/dt — 3.50 V/ns W Package power dissipation @ TA ≤ +25°C — 3.00 RthJA Thermal resistance, junction to ambient — 50 RthJc Thermal resistance, junction to case (metal) — 20 PD TJ Junction temperature -55 150 TS Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) — 300 °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol Definition VB High side floating supply absolute voltage VIN High voltage supply VO Half-bridge output voltage VCC VIH/VIL Low side and logic fixed supply voltage Logic input voltage (HIN & LIN) TA Ambient temperature IC Continuous collector current Note 1: www.irf.com Min. Max. VO + 10 VO + 20 — 575 (note 1) VIN 10 20 0 VCC -40 125 (TC = 25 °C) — 2.0 (TC = 85 °C) —— 1.1 Units V A Logic operational for VO of -5 to 575V. Logic state held for VO of -5 to -VBO 3 IR062HD4C10U-P2 IR082HD4C10U-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-on propagation delay (see note 2) -IR062 -IR082 — — 220 680 310 900 Vo = 0V toff Turn-off propagation delay (see note 2) -IR062 — 257 380 Vo = 575V -IR082 — 220 400 trr Reverse recovery time (FRED Diode) — 28 — Qrr Reverse recovery charge (FRED Diode) — 40 — ns IF = 400mA nC di/dt = 100 A/us Note 2: Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage. This is shown as VO in figure 2. Static Electrical Characteristics VBIAS (V CC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. TA = 25 oC Symbol Definition VCCUV+ VCC supply undervoltage positive going VBSUV+ threshold VCCUV- VCC supply undervoltage negative going VBSUV- threshold Min. Typ. Max. Units Test Conditions 8.0 8.9 7.4 8.2 9.8 V 9.0 V V mA IQCC Quiescent VCC supply current 0.4 1.0 1.6 IQBO Quiescent VBO supply current 20 60 150 ILK IINLK IOLK Offset supply leakage current @25°C — — 100 VB = 575V Vin to VO leakage current @25°C — — 250 VIN = 575V, @150°C @25°C — — 1000 — — 250 @150°C 1000 — — — VO leakage current VIH Logic “1” input voltage — 2.7 VIL Logic “0” input voltage — — 0.8 IIN+ Logic “1” input bias current — 20 40 IIN- Logic “0” input bias current — — 1 Collector-to-Emitter saturation voltage — 3.0 — Diode forward voltage — 1.2 — Bootstrap Diode forward voltage (D1) — 1.5 — VCE(on) VEC VF 4 µA VO = 0V VO = 575V V VCC = 10V to 20V µA VIN = 5V IC = 400mA V IE = 400mA IF = 400mA www.irf.com IR062HD4C10U-P2 IR082HD4C10U-P2 Functional Block Diagram IR082H4C10U-P2 IR062H4C10U-P2 V 6 D1 H IR2106 2 IN L IN V L 3 VIN 6 D1 9 1 Vcc H VB VIN B 9 1 IGBT1 Vcc O H FRED06 IR2108 2 7 S VO H IN L IN IGBT1 V L O 3 FRED06 4 4 COM COM IGBT1 O FRED06 7 S VO IGBT1 O FRED06 Lead Definitions Lead Symbol Definition VCC Logic and internal gate drive supply voltage. HIN Logic input for high side half bridge output, in phase LIN Logic input for low side half bridge output, in phase (IR062xxx) or out of phase (IR082xxx) VB High side gate drive floating supply VIN VO High voltage supply Half bridge output COM Logic return and half bridge return Lead Assignments 9 6 1 www.irf.com 2 3 4 7 1 2 3 4 6 7 9 Vcc HIN LIN COM VB VO VIN 5 IR062HD4C10U-P2 IR082HD4C10U-P2 Case Outline - 7 pin 4X 5.08 (.100) 2X 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) 6 www.irf.com IR062HD4C10U-P2 IR082HD4C10U-P2 50% LIN LIN 50% LIN LIN HIN 50% HIN VIN VO 50% 50% VO 0 Figure 1. Input/Output Timing Diagram t on t off Figure 2. Switching Time Waveform Definitions IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 1/29/2000 www.irf.com 7