Application Note 24 Issue 2 January 1996 An Introduction to the SM-8 Package Mike Townson Introduction Over recent years the benefits for companies to move to surface mount technology has lead to significant growth in the component industry. The requirements on the component suppliers is to provide either smaller components or components containing more than one device. The aim being to reduce PCB size and the number of component placements, thus reducing overall costs. Zetex is expanding it’s range of surface mount packages to meet these demands. The first in this new series of packages to be introduced is the SM-8. What is SM-8? The SM-8 package has evolved from the industry standard SOT223 surface mount package. The development of a new lead frame, whilst maintaining the physical outline of the standard package, effectively gives two trans istors in a package initially designed for one. Figure 1 illustrates the package. Figure 1 The SM-8 package. Package Construction The SM-8 is an eight pin device that can be configured in two ways due to different lead frame options. Both frame options enable two totally independent devices to be assembled into the same package. The first frame option has eight independent pins enabling two devices that require four connections to be assembled in the package, for example two high side drivers, such as the Zetex ZHD100 BiMos switch. The second frame option has two sets of two pins connected internally, effectively allowing the assembly of two devices requiring three connections, for AN 24 - 1 Application Note 24 Issue 2 January 1996 The thermal capability of the package depends somewhat on the devices that are assembled within it, and will be detailed for each device assembly on the appropriate datasheet. However for illustrative purposes, the dual Bipolar transistor ZDT1048 device is used here as an example. Figures 2 and 3 show the transient and DC thermal resistance response for the ZDT1048 device, when one and two devices are powered respectively, and show DC values of thermal resistance of 55.6 and 45.5°C/W. This leads to a package power handling capability of 2.75W at an ambient temperature of 25°C, when both devices are turned on equally. If the circuit operation is such that only one of the devices is on at once, then the capable dissipation is 2.25W. The data for the above was derived from thermal resistance measurements with the package mounted on a standard FR4 PCB with a copper area of 2 inches square. As with any surface mount component, the actual thermal resistance achieved depends on many The latter is particularly effective in dissipating heat as the internal copper traces encourage lateral heat flow within the board, therefore possibly increasing the area from which the heat is dissipated. Figure 4 shows how the thermal resistance varies with single copper sided FR4 PCB area. D=1(D.C.) t1 50 40 D=t1 tP 120 Thermal Resistance ( C/W) Thermal Capability Single device on 56 Thermal Resistance ( C/W) The body of the device is a moulded epoxy and the leads are tin/lead plated. The dimensions of the package and pinout detail for transistors is provided in Appendix A. factors including the board area, the board material, proximity of passive and other components, and whether the board is single, double sided or multi-layer. tP D=0.5 30 D=0.2 D=0.1 D=0.05 20 10 Single Pulse 0 100µ 1m 10m 100m 10 1 100 Pulse Width (Sec) 100 80 20 1 10 PCB Area (square inches) Electrical Specification D=1(D.C.) t1 40 D=t1 tP 30 tP D=0.5 20 D=0.2 D=0.1 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 Pulse Width (Sec) Transient Thermal Resistance Figure 3 Transient Thermal Resistance Curves for the ZDT1048 - Both Devices on. AN 24 - 2 Overall the SM-8 package offers Zetex and it’s customers the flexibility to provide innovative and cost effective circuit solutions. Applications Figure 4 Thermal Resistance vs PCB Area (Single Copper Layer on FR4). Both devices on 46 The product range is still in its infancy. New products are being introduced on a gradual basis as new opportunities are identified. An introductory range has been generated to demonstrate the options that are available to design engineers, This includes dual NPN or PNP transistors, NPN and PNP combinations, MOSFET combinations, dual high side drivers, and various Linear IC combinations. 40 0.1 Figure 2 Transient Thermal Resistance Curves for the ZDT1048 - Single Device on. Product Range Future developments will include dual IGBTs, and linear ICs/discrete component combinations. 60 0 Transient Thermal Resistance Thermal Resistance ( C/W) example two Bipolar transistors or MOSFETs. The two common pins are internally connected to the frame onto which the transistor die is attached, and through which the collector or drain connection is made. This provides a low thermal resistance, and therefore allows a good transfer of heat away from the semiconductor chip through the frame, and onto the board or substrate. Application Note 24 Issue 2 January 1996 Theoretically any combination of two chips from the Zetex range of components can be assembled in the SM-8 package, however, commercial i m p l i c a t i o n s w i l l b e t a k e n i n to consideration before introduction. This gives a potential current handling capability up to 5 Amps continuous with 20 Amps pulsed and voltages ranging from 10 to 450 Volts. Appendix B reproduces a datasheet for one of the dual transistor products - the ZDT1048. This devic e has been developed specifically for service within LCD Backlight Inverters. For discrete component combinations the opportunities will lie in designs using push pull circuits, half or full bridges, Royer converters or high side drivers. These can be found in such applications as compact fluorescent bal lasts , eme rge ncy lighting, LCD backlighting, motor drives and siren drivers. As an example of how the SM-8 package can transform a product, Figure 5 shows how Mitel Semiconductors have been able to reduce the size of their SLIC hybrid (part # MH88615) by replacing 4 SOT223 packaged devices with 2 SM-8s. The SLIC (Subscriber Line Interface Card) provides a complete interface between a switching system and a subscriber loop. AN 24 - 3 Application Note 24 Issue 2 January 1996 The thermal capability of the package depends somewhat on the devices that are assembled within it, and will be detailed for each device assembly on the appropriate datasheet. However for illustrative purposes, the dual Bipolar transistor ZDT1048 device is used here as an example. Figures 2 and 3 show the transient and DC thermal resistance response for the ZDT1048 device, when one and two devices are powered respectively, and show DC values of thermal resistance of 55.6 and 45.5°C/W. This leads to a package power handling capability of 2.75W at an ambient temperature of 25°C, when both devices are turned on equally. If the circuit operation is such that only one of the devices is on at once, then the capable dissipation is 2.25W. The data for the above was derived from thermal resistance measurements with the package mounted on a standard FR4 PCB with a copper area of 2 inches square. As with any surface mount component, the actual thermal resistance achieved depends on many The latter is particularly effective in dissipating heat as the internal copper traces encourage lateral heat flow within the board, therefore possibly increasing the area from which the heat is dissipated. Figure 4 shows how the thermal resistance varies with single copper sided FR4 PCB area. D=1(D.C.) t1 50 40 D=t1 tP 120 Thermal Resistance ( C/W) Thermal Capability Single device on 56 Thermal Resistance ( C/W) The body of the device is a moulded epoxy and the leads are tin/lead plated. The dimensions of the package and pinout detail for transistors is provided in Appendix A. factors including the board area, the board material, proximity of passive and other components, and whether the board is single, double sided or multi-layer. tP D=0.5 30 D=0.2 D=0.1 D=0.05 20 10 Single Pulse 0 100µ 1m 10m 100m 10 1 100 Pulse Width (Sec) 100 80 20 1 10 PCB Area (square inches) Electrical Specification D=1(D.C.) t1 40 D=t1 tP 30 tP D=0.5 20 D=0.2 D=0.1 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 Pulse Width (Sec) Transient Thermal Resistance Figure 3 Transient Thermal Resistance Curves for the ZDT1048 - Both Devices on. AN 24 - 2 Overall the SM-8 package offers Zetex and it’s customers the flexibility to provide innovative and cost effective circuit solutions. Applications Figure 4 Thermal Resistance vs PCB Area (Single Copper Layer on FR4). Both devices on 46 The product range is still in its infancy. New products are being introduced on a gradual basis as new opportunities are identified. An introductory range has been generated to demonstrate the options that are available to design engineers, This includes dual NPN or PNP transistors, NPN and PNP combinations, MOSFET combinations, dual high side drivers, and various Linear IC combinations. 40 0.1 Figure 2 Transient Thermal Resistance Curves for the ZDT1048 - Single Device on. Product Range Future developments will include dual IGBTs, and linear ICs/discrete component combinations. 60 0 Transient Thermal Resistance Thermal Resistance ( C/W) example two Bipolar transistors or MOSFETs. The two common pins are internally connected to the frame onto which the transistor die is attached, and through which the collector or drain connection is made. This provides a low thermal resistance, and therefore allows a good transfer of heat away from the semiconductor chip through the frame, and onto the board or substrate. Application Note 24 Issue 2 January 1996 Theoretically any combination of two chips from the Zetex range of components can be assembled in the SM-8 package, however, commercial i m p l i c a t i o n s w i l l b e t a k e n i n to consideration before introduction. This gives a potential current handling capability up to 5 Amps continuous with 20 Amps pulsed and voltages ranging from 10 to 450 Volts. Appendix B reproduces a datasheet for one of the dual transistor products - the ZDT1048. This devic e has been developed specifically for service within LCD Backlight Inverters. For discrete component combinations the opportunities will lie in designs using push pull circuits, half or full bridges, Royer converters or high side drivers. These can be found in such applications as compact fluorescent bal lasts , eme rge ncy lighting, LCD backlighting, motor drives and siren drivers. As an example of how the SM-8 package can transform a product, Figure 5 shows how Mitel Semiconductors have been able to reduce the size of their SLIC hybrid (part # MH88615) by replacing 4 SOT223 packaged devices with 2 SM-8s. The SLIC (Subscriber Line Interface Card) provides a complete interface between a switching system and a subscriber loop. AN 24 - 3 Application Note 24 Issue 2 January 1996 Figure 5 Mitel SLIC Hybrid using SM-8 Dual transistors. Future Developments Evaluation is ongoing of suitable four chip assemblies including a ’H’-Bridge configuration (4 transistors), an anti-parallel diode protected half-bridge (2 transistors and 2 diodes) and Schottky diode bridges. Plans are already underway to develop an 8 lead version of the smaller SOT23 package, again with the aim of offering two independent devices in one package. This part will be called the SSM-8, and it is expected that u s i n g v a r i a n t s o f th e S u p e r S O T geometry will enable the package to house two 15V devices, individually capable of conducting up to 3A continuous, and 12A under pulsed conditions. AN 24 - 4 Application Note 24 Issue 2 January 1996 Appendix A Dimensional and Pinout details He A PIN NUMBER BIPOLARS MOSFETS 1 E2 S2 2 B2 G2 3 E1 S1 4 B1 G1 5 C1 D1 6 C1 D1 7 C2 D2 8 C2 D2 4 3 2 8 e1 1 D e2 5 6 A1 7 b E o 45° c Pinout details for dual Bipolar and MOSFET products. Lp 3 Dim Millimetres Min A A1 – 0.02 Max Min Typ Max – 1.7 – – 0.067 – 0.1 0.0008 – 0.004 – 0.028 – c 0.24 – 0.32 0.009 – 0.013 D 6.3 – 6.7 0.248 – 0.264 E 3.3 – 3.7 b – Typ Inches 0.7 – 0.130 – 0.145 e1 – 4.59 – – 0.180 – e2 – 1.53 – – 0.060 – He 6.7 – 7.3 0.264 – 0.287 Lp 0.9 – – 0.035 – – α – – 15° – – 15° β – 10° – – 10° – Dimensional detail. AN 24 - 5 Application Note 24 Issue 2 January 1996 Appendix B Sample Datasheet ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1048 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V V Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 17.5 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A Base Current IB 500 mA Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at T amb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. AN 24 - 6 Application Note 24 Issue 2 January 1996 PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCES 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 17.5 24 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 50 85 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5 8.7 V IE=100µA Collector Cutoff Current ICBO 0.3 10 nA VCB=35V Emitter Cutoff Current I EBO 0.3 10 nA VEB=4V Collector Emitter Cutoff Current ICES 0.3 10 nA VCES=35V Collector-Emitter Saturation Voltage VCE(sat) 27 55 120 200 200 45 75 160 240 300 mV mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=5A, IB=100mA* IC=5A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 1000 1100 mV IC=5A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 900 1000 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 300 300 250 50 440 450 450 300 80 Transition Frequency fT 150 Output Capacitance Cobo 60 ton toff Switching Times MAX. IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, V CE=2V* 1200 MHz IC=50mA, VCE=10V f=50MHz pF VCB=10V, f=1MHz 120 ns IC=4A, IB=40mA, VCC=10V 250 ns IC=4A, IB=±40mA, VCC=10V 80 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% AN 24 - 7 Application Note 24 Issue 2 January 1996 Appendix B Sample Datasheet ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1048 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V V Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 17.5 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A Base Current IB 500 mA Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at T amb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. AN 24 - 6 Application Note 24 Issue 2 January 1996 PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCES 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 17.5 24 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 50 85 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5 8.7 V IE=100µA Collector Cutoff Current ICBO 0.3 10 nA VCB=35V Emitter Cutoff Current I EBO 0.3 10 nA VEB=4V Collector Emitter Cutoff Current ICES 0.3 10 nA VCES=35V Collector-Emitter Saturation Voltage VCE(sat) 27 55 120 200 200 45 75 160 240 300 mV mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=5A, IB=100mA* IC=5A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 1000 1100 mV IC=5A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 900 1000 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 300 300 250 50 440 450 450 300 80 Transition Frequency fT 150 Output Capacitance Cobo 60 ton toff Switching Times MAX. IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, V CE=2V* 1200 MHz IC=50mA, VCE=10V f=50MHz pF VCB=10V, f=1MHz 120 ns IC=4A, IB=40mA, VCC=10V 250 ns IC=4A, IB=±40mA, VCC=10V 80 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% AN 24 - 7 Application Note 24 Issue 2 January 1996 TYPICAL CHARACTERISTICS 0.8 0.8 +25°C 0.6 VCE(sat) - (V) VCE(sat) - (V) 0.6 IC/IB=100 IC/IB=50 IC/IB=100 IC/IB=200 0.4 0.2 1mA 10mA 100mA 1A 10A 0.4 -55°C +25°C +100°C +175°C 0.2 1mA 100A 10mA 100mA IC-Collector Current 1.4 1.2 +25°C 1.0 +25°C VBE(sat) - (V) Hfe - Typical Gain IC/IB=100 +100°C 400 -55°C 300 200 0.8 -55°C +100°C +175°C 0.6 0.4 0.2 100 1mA 10mA 100mA 1A 10A 1mA 100A 10mA 100mA 100 -55°C 1.0 +25°C +100°C 0.8 +175°C 0.6 0.4 0.2 1A 10A 100A IC - Collector Current (A) 1.2 VCE=2V 10mA 100mA 10A 100A VBE(sat) v Ic hFE v IC 1mA 1A IC-Collector Current IC-Collector Current VBE(on) -(V) 100A VCE(sat) v IC 700 VCE=2V 500 10A IC-Collector Current VCE(sat) v IC 600 1A Single Pulse Test Tamb=25C 10 1 0.1 0.01 10mV DC 1s 100ms 10ms 1ms 100us 100mV 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area AN 24 - 8 100V