VEMD5010X01 Datasheet

VEMD5010X01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• AEC-Q101 qualified
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
DESCRIPTION
• Angle of half sensitivity: ϕ = ± 65°
VEMD5010X01 is a high speed and high sensitive PIN
photodiode. It is a low profile surface mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible and near infrared radiation.
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.1 (nm)
VEMD5010X01
48
± 65
430 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMD5010X01
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Top view
VEMD5010X01-GS15
Tape and reel
MOQ: 5000 pcs, 5000 pcs/reel
Top view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
SYMBOL
VALUE
VR
20
UNIT
V
PV
215
mW
Tj
110
°C
Operating temperature range
Tamb
-40 to +110
°C
Storage temperature range
Tstg
-40 to +110
°C
Soldering temperature
Acc. reflow solder profile fig. 8
Thermal resistance junction/ambient
ESD safety HBM
Rev. 1.1, 21-Mar-16
± 2000 V, 1.5 kΩ, 100 pF, 3 pulses
Tsd
260
°C
RthJA
350
K/W
ESDHBM
≥2
kV
Document Number: 84202
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD5010X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
MIN.
TYP.
MAX.
UNIT
1
1.3
V
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
20
V
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
-2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
45
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
Reverse light current
40
40
pF
48
μA
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
940
nm
λ0.1
430 to 1100
nm
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
Range of spectral bandwidth
Noise equivalent power
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.1, 21-Mar-16
1.4
0
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 84202
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD5010X01
www.vishay.com
Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.8
0.6
0.4
0.2
0
0.1
1
10
Ee - Irradiance (mW/cm2)
12787
1.0
350
550
Fig. 3 - Reverse Light Current vs. Irradiance
750
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
0.5 mW/cm 2
0.2 mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
λ = 950 nm
0.1
1
10
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
VR - Reverse Voltage (V)
12788
10°
30°
1 mW/cm 2
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (µA)
100
1
1150
950
λ - Wavelength (nm)
94 8420
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.1, 21-Mar-16
Document Number: 84202
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD5010X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
4
Bottom view
2.1
1.8
3
5
1.8
0.2
0.1
3
0.9 ± 0.15
Optical
center
Optical
window
Top view
C (20 : 1)
C
Tie bar, electrically connected to cathode
2
Recommended footprint
0.65
1.2
4.1
1
0.6
Cathode
0.9
1.2
0.8
1
5.2
2.5
Exposed pad
(cathode)
3.1
NC
1
0.8
0.4 (4 x)
Center of device
0.8
2
Anode
0.6 (4 x)
Drawing- No.: 6.550-5329.01-4
Issue: 2; 03.03.2016
Rev. 1.1, 21-Mar-16
Not indicated tolerances ± 0.1
Technical drawings
according to DIN
specification
Document Number: 84202
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD5010X01
www.vishay.com
Vishay Semiconductors
TAPE AND REEL DIMENSIONS in millimeters
Reel-design is reperesentative for different types
Unreel direction
X
Label posted
here
Ø 1.55
B-B ( 2 : 1 )
0.3
B
Ø 1.5
8
2
X
Anode
1.75
B
Drawing-No.: 9.800-5129.01-4;
Issue: 1; 20.07.2015
Rev. 1.1, 21-Mar-16
1.42
5.5
Document Number: 84202
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD5010X01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
0
19841
50
100
150
200
250
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020D
Rev. 1.1, 21-Mar-16
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: Level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
max. ramp up 3 °C/s
0
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
Document Number: 84202
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000