VBP104S, VBP104SR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: GW, RGW VBP104S • Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Floor life: 168 h, MSL 3, acc. J-STD-020 VBP104SR • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition DESCRIPTION APPLICATIONS VBP104S and VBP104SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area detecting visible and near infrared radiation. • High speed photo detector PRODUCT SUMMARY Ira (μA) ϕ (deg) λ0.1 (nm) VBP104S 35 ± 65 430 to 1100 VBP104SR 35 ± 65 430 to 1100 PACKAGE FORM COMPONENT Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS VBP104S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBP104SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 60 V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 350 K/W Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.4, 24-Aug-11 Acc. reflow solder profile fig. 8 Document Number: 81170 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF TYP. MAX. UNIT 1 1.3 V IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 48 VR = 3 V, f = 1 MHz, E = 0 CD 17 40 pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. 60 V pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 32 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 35 μA 25 Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 940 nm Range of spectral bandwidth λ0.1 430 to 1100 nm Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.4, 24-Aug-11 1.4 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81170 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors S(λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.8 0.6 0.4 0.2 0 0.1 0.01 0.1 10 1 Ee - Irradiance (mW/cm2) 94 8421 350 550 750 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° Srel - Relative Radiant Sensitivity λ = 950 nm 1 mW/cm2 0.5 mW/cm2 10 1150 950 λ - Wavelength (nm) 94 8420 Fig. 3 - Reverse Light Current vs. Irradiance Ira - Reverse Light Current (µA) 1.0 0.2 mW/cm2 2 0.1 mW/cm 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 1 0.1 1 10 0.6 100 VR - Reverse Voltage (V) 94 8422 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 94 8423 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.4, 24-Aug-11 Document Number: 81170 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors 0.1 - 0.1 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 (0.47 ref.) PACKAGE DIMENSIONS FOR VBP104S in millimeters Flat area 0.3 min. 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size 2.4 x 2.4 Cathode 0.8 ± 0.1 1.6 ± 0.1 3.9 ± 0.1 1.95 Anode 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN specifications Recommended solder pad 8.9 1.8 5.4 Drawing-No.: 6.541-5088.01-4 Issue: 1; 15.04.10 22107 Rev. 1.4, 24-Aug-11 Document Number: 81170 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors 0.1 min. (0.47 ref.) Flat area 0.3 min. 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 PACKAGE DIMENSIONS FOR VBP104SR in millimeters 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size Cathode 0.8 ± 0.1 Anode 3.9 ± 0.1 1.6 ± 0.1 1.95 2.4 x 2.4 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN Recommended solder pad specifications 8.9 1.8 5.4 Drawing-No.: 6.541-5087.01-4 Issue: 1; 15.04.10 22106 Rev. 1.4, 24-Aug-11 Document Number: 81170 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors TAPING DIMENSIONS FOR VBP104S in millimeters 21730 TAPING DIMENSIONS FOR VBP104SR in millimeters 21731 Rev. 1.4, 24-Aug-11 Document Number: 81170 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors REEL DIMENSIONS FOR VBP104S AND VBP104SR in millimeters 21732 SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.4, 24-Aug-11 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. Document Number: 81170 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000