Data Sheet

NX3P1107
Logic controlled high-side power switch
Rev. 1 — 9 January 2013
Product data sheet
1. General description
The NX3P1107 is a high-side load switch which features a low ON resistance P-channel
MOSFET that supports more than 1.5 A of continuous current. Designed for operation
from 0.9 V to 3.6 V, it is used in power domain isolation applications to reduce power
dissipation and extend battery life. The enable logic includes integrated logic level
translation making the device compatible with lower voltage processors and controllers.
The NX3P1107 is ideal for portable, battery operated applications due to low ground
current and ultra-low OFF-state current.
2. Features and benefits
 Wide supply voltage range from 0.9 V to 3.6 V
 Very low ON resistance:
 34 m at a supply voltage of 3.3 V
 High noise immunity
 Low OFF-state leakage current (2.0 A maximum)
 1.2 V control logic at a supply voltage of 3.6 V
 High current handling capability (1.5 A continuous current)
 Turn-on slew rate limiting
 ESD protection:
 HBM JESD22-A114F Class 3A exceeds 4000 V
 CDM AEC-Q100-011 revision B exceeds 500 V
 Specified from 40 C to +85 C
3. Applications
 Cell phone
 Digital cameras and audio devices
 Portable and battery-powered equipment
NX3P1107
NXP Semiconductors
Logic controlled high-side power switch
4. Ordering information
Table 1.
Ordering information
Type number
NX3P1107UK
Package
Temperature range
Name
Description
Version
40 C to +85 C
WLCSP4
wafer level chip-size package; 4 bumps; 0.96  NX3P1107/NX3P1108
0.96  0.55 mm. (Backside coating included)
5. Marking
Table 2.
Marking codes
Type number
Marking code
NX3P1107UK
x7
6. Functional diagram
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EN
VIN
VOUT
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Fig 1.
Logic symbol
Fig 2.
Logic diagram (simplified schematic)
7. Pinning information
7.1 Pinning
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Pin configuration for WLCSP4
NX3P1107
Product data sheet
DDD
Fig 3.
Fig 4.
Ball mapping for WLCSP4
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7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
VOUT
A1
output voltage
GND
B1
ground (0 V)
VIN
A2
input voltage
EN
B2
enable input (active HIGH)
8. Functional description
Table 4.
Function table[1]
Input EN
Switch
L
switch OFF
H
switch ON
[1]
H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VI
input voltage
input EN
[1]
0.5
+4.0
V
input VIN
[2]
0.5
+4.0
V
[2]
0.5
VI(VIN)
V
VSW
switch voltage
output VOUT
IIK
input clamping current
input EN: VI(EN) < 0.5 V
50
-
mA
ISK
switch clamping current
input VIN: VI(VIN) < 0.5 V
50
-
mA
output VOUT: VO(VOUT) < 0.5 V
50
-
mA
output VOUT: VO(VOUT) > VI(VIN) + 0.5 V
-
50
mA
VSW > 0.5 V
-
1500
mA
40
+125
C
65
+150
C
-
300
mW
ISW
switch current
Tj(max)
maximum junction
temperature
Tstg
storage temperature
[3]
total power dissipation
Ptot
[1]
The minimum input voltage rating may be exceeded if the input current rating is observed.
[2]
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
[3]
The (absolute) maximum power dissipation depends on the junction temperature Tj. Higher power dissipation is allowed in conjunction
with lower ambient temperatures. The conditions to determine the specified values are Tamb = 85 C and the use of a two layer PCB.
NX3P1107
Product data sheet
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Logic controlled high-side power switch
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol Parameter
Conditions
Min
Max
Unit
VI
input voltage
0.9
3.6
V
Tamb
ambient temperature
40
+85
C
11. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
[1][2]
thermal resistance from junction to ambient
Typ
Unit
84
K/W
[1]
The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to
larger Cu layer areas for example, to the power and ground layer. In multi-layer PCB applications, use the second layer to create a large
heat spreader area right below the device. If this layer is either ground or power, connect it with several vias to the top layer connected
to the device ground or supply. Try not to use any solder-stop varnish under the chip.
[2]
Rely on the measurement data given for a rough estimation of the Rth(j-a) in your application. The actual Rth(j-a) value may vary in
applications using different layer stacks and layouts
12. Static characteristics
Table 8.
Static characteristics
VI(VIN) = 0.9 V to 3.6 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
VIL
HIGH-level
input voltage
LOW-level
input voltage
Tamb = 25 C
Conditions
Tamb = 40 C to +85 C Unit
Min
Typ
Max
Min
Max
VI(VIN) = 0.9 V to 1.1 V
-
-
-
0.8
-
V
VI(VIN) = 1.1 V to 1.3 V
-
-
-
1.0
-
V
VI(VIN) = 1.3 V to 1.8 V
-
-
-
1.1
-
V
VI(VIN) = 1.8 V to 3.6 V
-
-
-
1.1
-
V
VI(VIN) = 0.9 V to 1.1 V
-
-
-
-
0.2
V
VI(VIN) = 1.1 V to 1.3 V
-
-
-
-
0.3
V
VI(VIN) = 1.3 V to 1.8 V
-
-
-
-
0.4
V
VI(VIN) = 1.8 V to 3.6 V
-
-
-
-
0.45
V
-
0.1
-
-
1
A
EN input
EN input
II
input leakage
current
IGND
ground current VI(EN) = 0 V or 3.6 V; VOUT open;
see Figure 5 and Figure 6
-
-
-
2
-
A
IS(OFF)
OFF-state
leakage
current
-
0.1
-
-
2.0
A
NX3P1107
Product data sheet
VI(EN) = 0 V or 3.6 V
VI(VIN) = 3.6 V; VI(EN) = GND;
VI(VOUT) = GND or 3.6 V; see Figure 10
and Figure 11
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NXP Semiconductors
Logic controlled high-side power switch
12.1 Graphs
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VI(EN) = VI(VIN).
VI(EN) = VI(VIN).
(1) VI(VIN) = 3.6 V.
(1) Tamb = 40 C.
(2) VI(VIN) = 3.3 V.
(2) Tamb = 25 C.
(3) VI(VIN) = 1.2 V.
(3) Tamb = 85 C.
9,9,19
(4) VI(VIN) = 0.9 V.
Fig 5.
Waveform showing the ground current versus
temperature
Fig 6.
DDD
Waveform showing the ground current versus
input voltage on pin VIN
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VI(EN) = 1.2 V
9,9,19
VI(EN) = 1.2 V
(1) VI(VIN) = 3.6 V.
(1) Tamb = 40 C.
(2) VI(VIN) = 3.3 V.
(2) Tamb = 85 C.
(3) VI(VIN) = 1.2 V.
(3) Tamb = 25 C.
(4) VI(VIN) = 0.9 V.
Fig 7.
Waveform showing the ground current versus
temperature
NX3P1107
Product data sheet
Fig 8.
Waveform showing the ground current versus
input voltage on pin VIN
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NX3P1107
NXP Semiconductors
Logic controlled high-side power switch
DDD
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9,9(19
(1) Tamb = 40 C.
(2) Tamb = 85 C.
(3) Tamb = 25 C.
Fig 9.
Waveform showing the ground current versus input voltage on pin EN
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VI(EN) = GND.
(1) VI(VIN) = 3.6 V.
(2) VI(VIN) = 3.3 V.
(3) VI(VIN) = 1.2 V.
(4) VI(VIN) = 0.9 V.
Fig 10. Waveforms showing the OFF-state leakage current versus temperature
NX3P1107
Product data sheet
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Logic controlled high-side power switch
DDD
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9,9,19
(1) Tamb = 40 C.
(2) Tamb = 25 C.
(3) Tamb = 85 C.
Fig 11. Waveforms showing the OFF-state leakage current versus input voltage on pin VIN
12.2 ON resistance
Table 9.
ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
RON
[1]
Parameter
ON resistance
Tamb = 40 C to +85 C
Conditions
Unit
Min
Typ[1]
Max
VI(VIN) = 0.9 V
-
105
140
m
VI(VIN) = 1.2 V
-
68
81
m
VI(VIN) = 1.5 V
-
55
65
m
VI(VIN) = 1.8 V
-
50
55
m
VI(VIN) = 2.5 V
-
40
44
m
VI(VIN) = 3.3 V
-
34
40
m
VI(EN) = VI(VIN); ILOAD = 200 mA;
see Figure 12, Figure 13 and
Figure 14
Typical values are measured at Tamb = 25 C.
NX3P1107
Product data sheet
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Rev. 1 — 9 January 2013
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Logic controlled high-side power switch
12.3 ON resistance test circuit and waveforms
VSW
EN
VIH
VIN
VI
VOUT
ILOAD
GND
001aao350
RON = VSW / ILOAD.
Fig 12. Test circuit for measuring ON resistance
DDD
DDD
521
Pȍ
521
Pȍ
7DPEƒ&
9,9,19
VI(EN) = VI(VIN); ILOAD = 200 mA
ILOAD = 200 mA.
(1) VI(VIN) = 0.9 V.
(1) Tamb = 40 C.
(2) VI(VIN) = 1.2 V.
(2) Tamb = 25 C.
(3) VI(VIN) = 3.3 V.
(3) Tamb = 85 C.
(4) VI(VIN) = 3.6 V.
Fig 13. Waveform showing the ON resistance versus
temperature
NX3P1107
Product data sheet
Fig 14. Waveform showing the ON resistance versus
input voltage
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Logic controlled high-side power switch
13. Dynamic characteristics
Table 10. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 16.
Symbol
ten
tdis
ton
toff
tTLH
tTHL
Parameter
Tamb = 25 C
Conditions
enable time
Unit
Min
Typ
Max
VI(VIN) = 1.8 V
-
120
-
s
VI(VIN) = 3.3 V
-
70
-
s
VI(VIN) = 1.8 V
-
5.6
-
s
VI(VIN) = 3.3 V
-
5.8
-
s
VI(VIN) = 1.8 V
-
220
-
s
VI(VIN) = 3.3 V
-
150
-
s
VI(VIN) = 1.8 V
-
118
-
s
VI(VIN) = 3.3 V
-
118
-
s
VI(VIN) = 1.8 V
-
100
-
s
VI(VIN) = 3.3 V
-
80
-
s
VI(VIN) = 1.8 V
-
112.5
-
s
VI(VIN) = 3.3 V
-
112.5
-
s
EN to VOUT; see Figure 15
disable time
EN to VOUT; see Figure 15
turn-on time
EN to VOUT; see Figure 15
turn-off time
EN to VOUT; see Figure 15
LOW to HIGH output
transition time
HIGH to LOW output
transition time
VOUT; see Figure 15
VOUT; see Figure 15
13.1 Waveform and test circuits
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Measurement points are given in Table 11.
Logic level: VOH is the typical output voltage that occurs with the output load.
Fig 15. Switching times
NX3P1107
Product data sheet
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Logic controlled high-side power switch
Table 11.
Measurement points
Supply voltage
EN Input
Output
VI(VIN)
VM
VX
VY
0.9 V to 3.6 V
0.5  VI
0.9  VOH
0.1  VOH
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Test data is given in Table 12.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 16. Test circuit for measuring switching times
Table 12.
Test data
Supply voltage
EN Input
Load
VEXT
VI
CL
RL
0.9 V to 3.6 V
3.3 V
0.1 F
500 
DDD
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VI(VIN) = 1.8 V; CL = 0.1 F; RL = 500 .
Fig 17. Waveform showing the enable time
NX3P1107
Product data sheet
9,(1
9
929287
9
DDD
W—V
VI(VIN) = 3.3 V; CL = 0.1 F; RL = 500 .
Fig 18. Waveform showing the enable time
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Rev. 1 — 9 January 2013
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NX3P1107
NXP Semiconductors
Logic controlled high-side power switch
DDD
9,(1
9
929287
9
W—V
VI(VIN) = 1.8 V; CL = 0.1 F; RL = 500 .
Fig 19. Waveform showing the disable time
NX3P1107
Product data sheet
9,(1
9
929287
9
DDD
W—V
VI(VIN) = 3.3 V; CL = 0.1 F; RL = 500 .
Fig 20. Waveform showing the disable time
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14. Package outline
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NX3P1107
Product data sheet
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Rev. 1 — 9 January 2013
© NXP B.V. 2013. All rights reserved.
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Logic controlled high-side power switch
15. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CDM
Charged Device Model
ESD
ElectroStatic Discharge
HBM
Human Body Model
MOSFET
Metal-Oxide Semiconductor Field Effect Transistor
16. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX3P1107 v.1
20130109
Product data sheet
-
-
NX3P1107
Product data sheet
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Rev. 1 — 9 January 2013
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17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
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contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
NX3P1107
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
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Rev. 1 — 9 January 2013
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NX3P1107
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 January 2013
© NXP B.V. 2013. All rights reserved.
15 of 16
NX3P1107
NXP Semiconductors
Logic controlled high-side power switch
19. Contents
1
2
3
4
5
6
7
7.1
7.2
8
9
10
11
12
12.1
12.2
12.3
13
13.1
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 7
ON resistance test circuit and waveforms . . . . 8
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Waveform and test circuits . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 January 2013
Document identifier: NX3P1107