TCUT1600X01 Datasheet

TCUT1600X01
www.vishay.com
Vishay Semiconductors
Tall Dome Dual Channel Transmissive Optical Sensor
with Phototransistor Outputs
FEATURES
• Package type: surface mount
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 5.5 x 4 x 5.7
• AEC-Q101 qualified
• Gap (in mm): 3
• Aperture (in mm): 0.3
• Channel distance (center to center): 0.8 mm
• Typical output current under test: IC = 1.6 mA
• Emitter wavelength: 950 nm
• Lead (Pb)-free soldering released
DESCRIPTION
• Moisture sensitivity level (MSL): 1
The TCUT1600X01 is a compact transmissive sensor that
includes an infrared emitter and two phototransistor
detectors, located face-to-face in a surface mount package.
The tall dome design supports additional mechanical room
for vertical signal encoding.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Automotive optical sensors
• Accurate position sensor for encoder
• Sensor for motion, speed, and direction
• Sensor for “turn and push” encoding
PRODUCT SUMMARY
PART NUMBER
TCUT1600X01
GAP WIDTH
(mm)
APERTURE WIDTH
(mm)
3
0.3
TYPICAL OUTPUT
DAYLIGHT BLOCKING
CURRENT UNDER TEST (1)
FILTER INTEGRATED
(mA)
1.6
No
Note
(1) Conditions like in table basic characteristics/coupler
ORDERING INFORMATION
ORDERING CODE
PACKAGING
VOLUME (1)
REMARKS
TCUT1600X01
Tape and reel
MOQ: 1300 pcs, 1300 pcs/reel
Drypack, MSL 1
Note
(1) MOQ: minimum order quantity
Document Number: 84174
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
TCUT1600X01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Tamb ≤ 95 °C
Ptot
37.5
mW
Tj
110
°C
Tamb
-40 to +105
°C
Tstg
-40 to +125
°C
Tsd
260
°C
COUPLER
Total power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Soldering temperature
In accordance with fig. 16
INPUT (EMITTER)
Reverse voltage
VR
5
V
Tamb ≤ 95 °C
IF
25
mA
tp ≤ 10 μs
IFSM
200
mA
Tamb ≤ 95 °C
PV
37.5
mW
Collector emitter voltage
VCEO
20
V
Emitter collector voltage
VECO
7
V
IC
20
mA
ICEO
3.3
μA
Forward current
Forward surge current
Power dissipation
OUTPUT (DETECTOR)
Collector current
Tamb = 85 °C, VCE = 5 V
Collector dark current
ABSOLUTE MAXIMUM RATINGS
30
35
IF - Forward Current (mA)
PV - Power Dissipation (mW)
40
30
25
RthJA = 460 K/W
20
15
10
25
20
15
RthJA = 460 K/W
10
5
5
0
0
0
22460
20
40
60
80
100
0
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
22461
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Document Number: 84174
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
TCUT1600X01
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
VCE = 5 V, IF = 15 mA
IC
0.7
1.6
-
mA
IF = 15 mA, IC = 0.2 mA
VCEsat
-
-
0.4
V
Forward voltage
IF = 15 mA
VF
1
1.2
1.4
V
Reverse current
VR = 5 V
IR
-
-
10
μA
VR = 0 V, f = 1 MHz
Cj
-
25
-
pF
IC = 1 mA
VCEO
20
-
-
V
COUPLER
Collector current per channel
Collector emitter saturation
voltage
INPUT (EMITTER)
Junction capacitance
OUTPUT (DETECTOR)
Collector emitter voltage IC
Emitter collector voltage
IE = 100 μA
VECO
7
-
-
V
VCE = 25 V, IF = 0 A, E = 0 lx
ICEO
-
1
100
nA
Rise time
IC = 0.7 mA, VCE = 5 V,
RL = 100 Ω (see fig. 3)
tr
-
9
150
μs
Fall time
IC = 0.7 mA, VCE = 5 V,
RL = 100 Ω (see fig. 3)
tf
-
16
150
μs
Collector dark current
SWITCHING CHARACTERISTICS
IF
IF
0
+5V
IF
IC
0
adjusted by IF
T
t
100 %
90 %
R G = 50 Ω
tp
tp
IC
= 20
t p = 1 ms
50 Ω
Channel I
Oscilloscope
Channel II
R L ≥ 1 MΩ
C L ≤ 20 pF
100 Ω
20688
10 %
0
tr
td
ts
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
t
tf
t off
ts
tf
t off (= ts + tf)
Storage time
Fall time
Turn-off time
96 11698
Fig. 4 - Switching Times
Fig. 3 - Test Circuit for tr and tf
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.4
VF - Forward Voltage (V)
IF - Forward Current (mA)
100
10
1
0.8
20589
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
VF - Forward Voltage (V)
Fig. 5 - Forward Current vs. Forward Voltage
1.3
1.2
1.1
1.0
- 50 - 25
22680
0
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Fig. 6 - Forward Voltage vs. Ambient Temperature
Document Number: 84174
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
TCUT1600X01
www.vishay.com
Vishay Semiconductors
2.5
10
IC - Collector Current (mA)
IC - Collector Current (mA)
VCE = 5 V
1
0.1
2.0
IF = 15 mA
1.5
1.0
IF = 5 mA
0.5
VCE = 5 V
0.0
0.01
1
10
IF - Forward Current (mA)
22681
25
50
75
100
125
150
Fig. 10 - Collector Current vs. Ambient Temperature
100 000
ICEO - Collector Dark Current (nA)
10
IF = 25 mA
IF = 15 mA
IF = 5 mA
1
IF = 3 mA
0.1
10 000
0.1
1
10
1000
10
1
- 50 - 25
25
50
75
100 125 150
Fig. 11 - Collector Dark Current vs. Ambient Temperature
0.30
1
IC rel - Relative Collector Current
IC = 200 μA
0.25
IF = 5 mA
0.20
0.15
IF = 15 mA
0.10
0.05
0.00
- 50 - 25
22683
0
Tamb - Ambient Temperature (°C)
22685
Fig. 8 - Collector Current vs. Collector Emitter Voltage
VCE = 5 V
100
100
VCE - Collector Emitter Voltage (V)
22682
VCE = 70 V
VCE = 25 V
0.01
VCEsat - Coll. Emitter Saturation Voltage (V)
0
Tamb - Ambient Temperature (°C)
22684
Fig. 7 - Collector Current vs. Forward Current
IC - Collector Current (mA)
- 50 - 25
100
0
25
50
75
100
125
S
0.8
0.6
0.4
0.2
0
- 1.5
150
Tamb - Ambient Tempearture (°C)
Fig. 9 - Collector Emitter Saturation Voltage vs.
Ambient Temperature
20595
-1
- 0.5
0
0.5
1
1.5
S - Horizontal Displacement (mm)
Fig. 12 - Relative Collector Current vs. Horizontal Displacement
Document Number: 84174
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
TCUT1600X01
www.vishay.com
Vishay Semiconductors
I F = 15 mA
+ VC = 5 V
S
1 ± 0.2
ICrel - Rel. Collector Current
1
Optical axis
0.5
74HCT14
UQ
VE
10 kΩ
0
- 1.5
-1
- 0.5
0
0.5
1
1.5
13887
GND
S - Vertical Displacement (mm)
20610
Fig. 13 - Relative Collector Current vs. Vertical Displacement
Fig. 15 - Application example
REFLOW SOLDER PROFILE
100
300
80
RL = 100 Ω
70
60
50
40
tf
30
tr
20
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
10
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Temperature (°C)
tr/tf - Rise/Fall Time (µs)
90
max. ramp up 3 °C/s
0
0
20599
250
0
500 750 1000 1250 1500 1750 2000
IC - Collector Current (µA)
Fig. 14 - Rise/Fall Time vs. Collector Current
0
19841
50
100
150
200
250
300
Time (s)
Fig. 16 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
FLOOR LIFE
Level 1, acc. JEDEC®, J-STD-020. No time limit.
Document Number: 84174
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
TCUT1600X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3.16
Material cut-outs
Not indicated tolerances ± 0.15
0.5
0.8
1.4
0
1.4
Technical drawings
according to DIN
specification.
Emitter side
wider contact for
pin-identification
0.2 max.
0.2 max.
0.8 ± 0.05
0.2 B
5.5
Optical axis
0.3 ± 0.05
1
0.9
4.5
.3
0.9
5.7
Ø 0.35
R0
1
1.2
1
3
5
Injection gate
location
4
B
Pin connection
top view
Coll.
A
NC
E
Cath.
E
Detector side
Proposed solderpad design
1.9
0.7
1
R0
Ejector marks
.9
Marking area
1.4
0.7
Emitter side
0
1
1.2
1.4
3
Drawing-No.: 6.541-5098.01-4
Issue: 1; 04.11.15
Document Number: 84174
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
TCUT1600X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Reel-design is representative for different types
Unreel direction
A
E
(em mpt
pty y le
tra ade
iler r 4
20 00 m
0m m
m mi
mi n.
n.)
Ø 330
Ø 62
Label posted
here
2
Ø 13
18.4
12.4
E to E
E
A
Ø 1.55
0.4
Ø 1.5
4
8
2
Cathode
Anode
6
E
5.5
Drawing-No.: 9.800-5124.01-4
Issue: 1; 04.11.15
1.75
12
Document Number: 84174
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
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Revision: 02-Oct-12
1
Document Number: 91000