TCPT1600X01 www.vishay.com Vishay Semiconductors Tall Dome Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: surface mount • Detector type: phototransistor • Dimensions (L x W x H in mm): 5.5 x 4 x 5.7 • AEC-Q101 qualified • Gap (in mm): 3 • Aperture (in mm): 0.3 • Typical output current under test: IC = 1.6 mA • Emitter wavelength: 950 nm • Lead (Pb)-free soldering released • Moisture sensitivity level (MSL): 1 DESCRIPTION • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 The TCPT1600X01 is a compact transmissive sensor that includes an infrared emitter and a phototransistor detector, located face-to-face in a surface mount package. The tall dome design supports additional mechanical room for vertical signal encoding. APPLICATIONS • Automotive optical sensors • Accurate position sensor for encoder • Sensor for motion and speed • Sensor for “turn and push” encoding PRODUCT SUMMARY PART NUMBER TCPT1600X01 GAP WIDTH (mm) APERTURE WIDTH (mm) 3 0.3 TYPICAL OUTPUT DAYLIGHT BLOCKING CURRENT UNDER TEST (1) FILTER INTEGRATED (mA) 1.6 No Note (1) Conditions like in table basic characteristics/coupler ORDERING INFORMATION ORDERING CODE PACKAGING VOLUME (1) REMARKS TCPT1600X01 Tape and reel MOQ: 1300 pcs, 1300 pcs/reel Drypack, MSL 1 Note (1) MOQ: minimum order quantity Document Number: 84176 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 TCPT1600X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Tamb ≤ 95 °C Ptot 37.5 mW Tj 110 °C Tamb -40 to +105 °C Tstg -40 to +125 °C Tsd 260 °C COUPLER Total power dissipation Junction temperature Ambient temperature range Storage temperature range Soldering temperature In accordance with fig. 16 INPUT (EMITTER) Reverse voltage VR 5 V Tamb ≤ 95 °C IF 25 mA tp ≤ 10 μs IFSM 200 mA Tamb ≤ 95 °C PV 37.5 mW Collector emitter voltage VCEO 20 V Emitter collector voltage VECO 7 V IC 20 mA ICEO 3.3 μA Forward current Forward surge current Power dissipation OUTPUT (DETECTOR) Collector current Tamb = 85 °C, VCE = 5 V Collector dark current ABSOLUTE MAXIMUM RATINGS 30 35 IF - Forward Current (mA) PV - Power Dissipation (mW) 40 30 25 RthJA = 460 K/W 20 15 10 25 20 15 RthJA = 460 K/W 10 5 5 0 0 0 22460 20 40 60 80 100 0 120 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 22461 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature Document Number: 84176 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 TCPT1600X01 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT VCE = 5 V, IF = 15 mA IC 0.7 1.6 - mA IF = 15 mA, IC = 0.2 mA VCEsat - - 0.4 V Forward voltage IF = 15 mA VF 1 1.2 1.4 V Reverse current VR = 5 V IR - - 10 μA VR = 0 V, f = 1 MHz Cj - 25 - pF IC = 1 mA VCEO 20 - - V COUPLER Collector current Collector emitter saturation voltage INPUT (EMITTER) Junction capacitance OUTPUT (DETECTOR) Collector emitter voltage IC Emitter collector voltage IE = 100 μA VECO 7 - - V VCE = 25 V, IF = 0 A, E = 0 lx ICEO - 1 100 nA Rise time IC = 0.7 mA, VCE = 5 V, RL = 100 Ω (see fig. 3) tr - 9 150 μs Fall time IC = 0.7 mA, VCE = 5 V, RL = 100 Ω (see fig. 3) tf - 16 150 μs Collector dark current SWITCHING CHARACTERISTICS IF IF 0 +5V IF IC 0 adjusted by IF T t 100 % 90 % R G = 50 Ω tp tp IC = 20 t p = 1 ms 50 Ω Channel I Oscilloscope Channel II R L ≥ 1 MΩ C L ≤ 20 pF 100 Ω 20688 10 % 0 tr td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time t tf t off ts tf t off (= ts + tf) Storage time Fall time Turn-off time 96 11698 Fig. 4 - Switching Times Fig. 3 - Test Circuit for tr and tf BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.4 VF - Forward Voltage (V) IF - Forward Current (mA) 100 10 1 0.8 20589 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 VF - Forward Voltage (V) Fig. 5 - Forward Current vs. Forward Voltage 1.3 1.2 1.1 1.0 - 50 - 25 22680 0 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Fig. 6 - Forward Voltage vs. Ambient Temperature Document Number: 84176 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 TCPT1600X01 www.vishay.com Vishay Semiconductors 2.5 10 IC - Collector Current (mA) IC - Collector Current (mA) VCE = 5 V 1 0.1 2.0 IF = 15 mA 1.5 1.0 IF = 5 mA 0.5 VCE = 5 V 0.0 0.01 1 10 IF - Forward Current (mA) 22681 25 50 75 100 125 150 Fig. 10 - Collector Current vs. Ambient Temperature 100 000 ICEO - Collector Dark Current (nA) 10 IF = 25 mA IF = 15 mA IF = 5 mA 1 IF = 3 mA 0.1 10 000 0.1 1 10 1000 10 1 - 50 - 25 25 50 75 100 125 150 Fig. 11 - Collector Dark Current vs. Ambient Temperature 0.30 1 IC rel - Relative Collector Current IC = 200 μA 0.25 IF = 5 mA 0.20 0.15 IF = 15 mA 0.10 0.05 0.00 - 50 - 25 22683 0 Tamb - Ambient Temperature (°C) 22685 Fig. 8 - Collector Current vs. Collector Emitter Voltage VCE = 5 V 100 100 VCE - Collector Emitter Voltage (V) 22682 VCE = 70 V VCE = 25 V 0.01 VCEsat - Coll. Emitter Saturation Voltage (V) 0 Tamb - Ambient Temperature (°C) 22684 Fig. 7 - Collector Current vs. Forward Current IC - Collector Current (mA) - 50 - 25 100 0 25 50 75 100 125 S 0.8 0.6 0.4 0.2 0 - 1.5 150 Tamb - Ambient Tempearture (°C) Fig. 9 - Collector Emitter Saturation Voltage vs. Ambient Temperature 20595 -1 - 0.5 0 0.5 1 1.5 S - Horizontal Displacement (mm) Fig. 12 - Relative Collector Current vs. Horizontal Displacement Document Number: 84176 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 TCPT1600X01 www.vishay.com Vishay Semiconductors I F = 15 mA + VC = 5 V S 1 ± 0.2 ICrel - Rel. Collector Current 1 Optical axis 0.5 74HCT14 UQ VE 10 kΩ 0 - 1.5 -1 - 0.5 0 0.5 1 1.5 13887 GND S - Vertical Displacement (mm) 20610 Fig. 13 - Relative Collector Current vs. Vertical Displacement Fig. 15 - Application example REFLOW SOLDER PROFILE 100 300 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 10 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Temperature (°C) tr/tf - Rise/Fall Time (µs) 90 max. ramp up 3 °C/s 0 0 20599 250 0 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Fig. 14 - Rise/Fall Time vs. Collector Current 0 19841 50 100 150 200 250 300 Time (s) Fig. 16 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 FLOOR LIFE Level 1, acc. JEDEC®, J-STD-020. No time limit. Document Number: 84176 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 TCPT1600X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.16 Material cut-outs Not indicated tolerances ± 0.15 0 0.5 0.8 1.4 1.4 Technical drawings according to DIN specification. Emitter side wider contact for pin-identification 0.2 max. 0.2 max. 0.3 ± 0.05 5.5 Optical axis 0.1 B 0.9 0.9 .3 4.5 5.7 Ø 0.35 R0 1 1.2 1 1 3 Injection gate 5 4 B Pin connection top view Coll. A Detector side Ejector marks NC NC E Cath. Proposed solderpad design 1.9 Marking area 0.7 1 R0 .9 Emitter side 1.4 0 1.2 1.4 3 Drawing-No.: 6.541-5099.01-4 Issue: 1; 04.11.15 Document Number: 84176 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 TCPT1600X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Reel-design is representative for different types Unreel direction A E (em mpt pty y le tra ade iler r 4 20 00 m 0m m m mi mi n. n.) Ø 330 Ø 62 Label posted here 2 Ø 13 18.4 12.4 E to E (2 : 1) E A Ø 1.55 0.4 Ø 1.5 4 8 2 Cathode Anode 6 E 5.5 Drawing-No.: 9.800-5124.02-4 Issue: 1; 04.11.15 1.75 12 Document Number: 84176 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 11-Feb-16 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000