ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX652 SYMBOL MIN. TYP. Transition Frequency fT Switching Times ton toff 140 ZTX653 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz IC=100mA, VCE=5V f=100MHz 80 80 ns 1200 1200 ns IC=500mA, VCC=10V IB1=IB2=50mA 30 Output Capacitance Cobo 30 pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% THERMAL CHARACTERISTICS SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. UNIT 175 116 70 °C/W °C/W °C/W 2.0 C Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 0.001 0.01 0.1 1 10 ZTX653 UNIT V Collector-Base Voltage VCBO 100 120 VCEO 80 100 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A 1 5.7 W mW/°C -55 to +200 °C at Tamb=25°C derate above 25°C Ptot Tj:Tstg V ZTX652 ZTX653 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO 100 120 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 80 100 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µA Collector Cut-Off Current ICBO 10 µA µA µA µA VCB=80V VCB=100V VCB=80V,Tamb=100°C VCB=100V,Tamb=100°C 0.1 µA VEB=4V MIN. TYP. MAX. MIN. TYP. 0.1 Pulse Width (seconds) Derating curve Maximum transient thermal impedance Emitter Cut-Off Current 10 IEBO MAX. 0.1 100 T -Temperature (°C) 3-223 ZTX652 Collector-Emitter Voltage Single Pulse 0 0.0001 E-Line TO92 Compatible Operating and Storage Temperature Range 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 1.5 C B Power Dissipation PARAMETER ZTX652 ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 0.1 UNIT CONDITIONS. Collector-Emitter VCE(sat) Saturation Voltage 0.13 0.23 0.3 0.5 0.13 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter VBE(sat) Saturation Voltage 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage 0.8 1 0.8 1 V IC=1A, VCE=2V* VBE(on) 3-222 ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX652 SYMBOL MIN. TYP. Transition Frequency fT Switching Times ton toff 140 ZTX653 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz IC=100mA, VCE=5V f=100MHz 80 80 ns 1200 1200 ns IC=500mA, VCC=10V IB1=IB2=50mA 30 Output Capacitance Cobo 30 pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% THERMAL CHARACTERISTICS SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. UNIT 175 116 70 °C/W °C/W °C/W 2.0 C Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 0.001 0.01 0.1 1 10 ZTX653 UNIT V Collector-Base Voltage VCBO 100 120 VCEO 80 100 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A 1 5.7 W mW/°C -55 to +200 °C at Tamb=25°C derate above 25°C Ptot Tj:Tstg V ZTX652 ZTX653 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO 100 120 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 80 100 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µA Collector Cut-Off Current ICBO 10 µA µA µA µA VCB=80V VCB=100V VCB=80V,Tamb=100°C VCB=100V,Tamb=100°C 0.1 µA VEB=4V MIN. TYP. MAX. MIN. TYP. 0.1 Pulse Width (seconds) Derating curve Maximum transient thermal impedance Emitter Cut-Off Current 10 IEBO MAX. 0.1 100 T -Temperature (°C) 3-223 ZTX652 Collector-Emitter Voltage Single Pulse 0 0.0001 E-Line TO92 Compatible Operating and Storage Temperature Range 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 1.5 C B Power Dissipation PARAMETER ZTX652 ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 0.1 UNIT CONDITIONS. Collector-Emitter VCE(sat) Saturation Voltage 0.13 0.23 0.3 0.5 0.13 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter VBE(sat) Saturation Voltage 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage 0.8 1 0.8 1 V IC=1A, VCE=2V* VBE(on) 3-222 ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 TYPICAL CHARACTERISTICS 0.6 0.5 IC/IB=10 hFE - Gain VCE(sat) - (Volts) 225 0.4 0.3 0.2 175 VCE=2V 125 0.1 75 0 0.0001 0.001 0.01 0.1 1 25 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 1.0 1.0 VBE - (Volts) VBE(sat) - (Volts) 1.2 1.2 IC/IB=10 0.8 VCE=2V 0.8 0.6 0.6 0.4 0.001 0.0001 0.1 1 10 0.0001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC td tr tf ns 280 Switching time 1 0.1 0.001 10 Single Pulse Test at Tamb=25°C 10 IC - Collector Current (Amps) 0.01 D.C. 1s 100ms 10ms 1.0ms 100µs 240 2400 200 2000 160 1600 120 1200 80 800 40 400 0 ZTX652 ZTX653 0.01 0.1 1 10 IB1=IB2=IC/10 ts ns 2800 0 0.01 ts tf td tr 0.1 100 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3-224 1