NTE2657 (NPN) & NTE2658 (PNP) Silicon Complementary Transistors Medium Power Features: D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Pulse Current, ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/°C Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +200°C Thermal Resistance, Junction−to−Ambient, RthJA1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W Thermal Resistance, Junction−to−Ambient (Note 1), RthJA2 . . . . . . . . . . . . . . . . . . . . . . . . . . 116°C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W Note 1. Device mounted on P.C.B. with copper equal to 1sq. Inch minimum Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 100µA 120 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, Note 2 100 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 100µA 5 − − V VCB = 100V − − 0.1 µA VCB = 100V, TA = +100°C − − 10 IE = 100µA − − 0.1 µA IC = 1A, IB = 100mA, Note 2 − 0.13 0.3 V IC = 2A, IB = 200mA, Note 2 − 0.23 0.5 Collector Cut−Off Current Emitter Cut−Off Current Collector−Emitter Saturation Voltage ICBO IEBO VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 100mA, Note 2 − 0.9 1.25 V Base−Emitter Turn−On Voltage VBE(on) IC = 1A, VCE = 2V, Note 2 − 0.8 1 V 140 175 − MHz 100 140 − Transition Frequency NTE2657 NTE2658 fT IC = 100mA, VCE = 5V, f = 100MHz Electrical Characteristics (Cont’d) : (TA = +25°C unless otherwise specified) Parameter Switching Times NTE2657 NTE2658 Symbol Test Conditions Min Typ ton IC = 500mA, VCC = 10V, IB1=IB2 = 50mA − 80 toff 1200 ton 40 toff 600 Max Unit − ns pF Output Capacitance cob VCB = 10V, f = 1MHz − − 30 Static Forward Current Transfer Ratio hFE IC = 50mA, VCE = 2V, Note 2 70 200 − IC = 500mA, VCE = 2V, Note 2 100 200 300 IC = 1A, VCE = 2V, Note 2 55 110 − IC = 2A, VCE = 2V, Note 2 25 55 − Note 2. Measured under pulsed conditions: Pulse Width = 300µs, Duty Cycle ≤ 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EB C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max