2659

NTE2659 (NPN) & NTE2660 (PNP)
Silicon Complementary Transistors
Medium Power
Features:
D Low Saturation Voltage
Applications:
D Motor Driver
D DC−to−DC Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Pulse Current, ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Power Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/°C
Operating Temperature Range,Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +200°C
Thermal Resistance, Junction−to−Ambient, RthJA1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Thermal Resistance, Junction−to−Ambient (Note 1), RthJA2 . . . . . . . . . . . . . . . . . . . . . . . . . . 116°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Note 1. Device mounted on P.C.B. with copper equal to 1sq. Inch minimum
Electrical Characteritics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = 100µA
35
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, Note 2
25
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100µA
5
−
−
V
VCB = 30V
−
−
0.1
µA
VCB = 30V, TA = +100°C
−
−
10
VEB = 4V
−
−
0.1
µA
IC = 1A, IB = 100mA, Note 2
−
0.12
0.3
V
IC = 2A, IB = 200mA, Note 2
−
0.23
0.5
Collector Cut−Off Current
Emitter Cut−Off Current
Collector−Emitter Saturation Voltage
ICBO
IEBO
VCE(sat)
Base−Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 100mA, Note 2
−
0.9
1.25
V
Base−Emitter Turn−On Voltage
VBE(on)
IC = 1A, VCE = 2V, Note 2
−
0.8
1
V
Note 2. Measured under pulsed conditions: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Electrical Characteritics (Cont’d) : (TA = +25°C unless otherwise specified)
Parameter
Symbol
Static Forward Current Transfer Ratio
Transition Frequency
NTE2659
Min
Typ
IC = 50mA, VCE = 2V, Note 2
70
200
−
IC = 1A, VCE = 2V, Note 2
100
200
300
IC = 2A, VCE = 2V, Note 2
75
150
−
IC = 6A, VCE = 2V, Note 2
15
50
−
IC = 100mA, VCE = 5V, f = 100MHz
150
240
−
100
160
−
VCB = 10V, f = 1MHz
−
25
50
IC = 100mA, VCE = 5V, f = 100MHz
−
55
100
IC = 500mA, VCC = 10V, IB1=IB2=50mA
−
55
−
toff
−
300
−
ton
−
40
−
450
−
hFE
fT
Test Conditions
NTE2660
Output Capacitence
NTE2659
Cobo
NTE2660
Switching Times
NTE2659
NTE2660
ton
toff
Note 2. Measured under pulsed conditions: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
EB C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
Max Unit
MHz
pF
ns
ns