6N1135, 6N1136 Datasheet

6N1135, 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output,
110 °C Rated
FEATURES
NC
1
8
C (VCC)
• Operating temperature from - 55 °C to + 110 °C
A
2
7
B (VB)
• Isolation test voltages: 5300 VRMS
C
3
6
C (VO)
• TTL compatible
NC
4
5
E (GND)
• High bit rates: 1 MBd
i179081_3
i179081
• Bandwidth 2 MHz
V
D E
• Open-collector output
DESCRIPTION
• External base wiring possible
The 6N1135 and 6N1136 are 110 °C rated optocouplers
with a GaAIAs infrared emitting diode, optically coupled with
an integrated photo detector which consists of a photo
diode and a high-speed transistor in a DIP-8 plastic
package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J
• DIN EN 60747-5-5 (VDE 0884)
• cUL - file no. E52744, equivalent to CSA bulletin 5A
ORDERING INFORMATION
6
N
1
1
3
#
-
X
PART NUMBER
0
0
PACKAGE OPTION
#
DIP-8
Option 6
7.62 mm
10.16 mm
T
TAPE AND
REEL
Option 9
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
CTR (%)
≥7
UL
DIP-8
≥ 19
6N1135
6N1136
DIP-8, 400 mil, option 6
6N1135-X006
6N1136-X006
SMD-8, option 9
6N1135-X009T
6N1136-X009T
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
25
mA
t = 1 ms, duty cycle 50 %
IFM
50
mA
t ≤ 1 μs, 300 pulses/s
IFSM
1
A
Rth
700
K/W
Tamb = 70 °C
Pdiss
45
mW
Supply voltage
VCC
- 0.5 to 15
V
Output voltage
VO
- 0.5 to 15
V
VEBO
5
V
Peak forward current
Maximum surge forward current
Thermal resistance
Power dissipation
OUTPUT
Emitter base voltage
Output current
IO
Maximum Output current
Document Number: 83909
Rev. 1.7, 19-Oct-10
For technical questions, contact: [email protected]
8
mA
16
mA
www.vishay.com
1
6N1135, 6N1136
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
OUTPUT
Base current
IB
Thermal resistance
Power dissipation
5
mA
300
K/W
Tamb = 70 °C
Pdiss
100
mW
t=1s
VISO
5300
VRMS
Storage temperature range
Tstg
- 55 to + 125
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tsld
260
°C
COUPLER
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, Nov. 74)
Soldering temperature (1)
max. ≤ 10 s, dip soldering
≥ 0.5 mm from case bottom
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.6
1.9
UNIT
INPUT
Forward voltage
IF = 1.6 mA
VF
Breakdown voltage
IR = 10 μA
VBR
Reverse current
5
V
V
VR = 5 V
IR
0.5
VR = 0 V, f = 1 MHz
CI
125
pF
IF = 1.6 mA
ΔVF/ΔTA
- 1.7
mV/°C
Logic low supply current
IF = 1.6 mA, VO = open,
VCC = 15 V
ICCL
150
μA
Logic high supply current
IF = 0 mA, VO = open,
VCC = 15 V
ICCH
0.01
1
μA
Capacitance
Temperature coefficient,
forward voltage
10
μA
OUTPUT
Output voltage, output low
Output current, output high
IF = 16 mA, VCC = 4.5 V,
IO = 1.1 mA,
6N1135
VOL
0.1
0.4
V
IF = 16 mA, VCC = 4.5 V,
IO = 2.4 mA
6N1136
VOL
0.1
0.4
V
IF = 0 mA, VO = VCC = 5.5 V
IOH
3
500
nA
IF = 0 mA, VO = VCC = 15 V
IOH
0.01
1
μA
f = 1 MHz
CIO
0.6
COUPLER
Capacitance (input to output)
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
www.vishay.com
2
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
IF = 16 mA, VO = 0.4 V,
VCC = 4.5 V
6N1135
CTR
7
16
%
6N1136
CTR
19
35
%
IF = 16 mA, VO = 0.5 V,
VCC = 4.5 V
6N1135
CTR
5
%
6N1136
CTR
15
%
For technical questions, contact: [email protected]
MAX.
UNIT
Document Number: 83909
Rev. 1.7, 19-Oct-10
6N1135, 6N1136
High Speed Optocoupler, 1 MBd, Vishay Semiconductors
Photodiode with Transistor Output,
110 °C Rated
SWITCHING CHARACTERISTICS
PARAMETER
High to low
Low to high
TEST CONDITION
PART
SYMBOL
IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ
6N1135
IF = 16 mA, VCC = 5 V, RL = 1.9 kΩ
6N1136
IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ
IF = 16 mA, VCC = 5 V, RL = 1.9 kΩ
TYP.
MAX.
UNIT
tPHL
0.3
1.5
μs
tPHL
0.2
0.8
μs
6N1135
tPLH
0.3
1.5
μs
6N1136
tPLH
0.2
0.8
μs
Pulse generator
MIN.
IF
Z O = 50 Ω
t r ,t f = 5 ns
duty cycle 10 %
t ≤ 100 µs
t
5V
1
8
2
7
3
6
VO
4
5
CL
15 pF
VO
IF
IF monitor
5V
RL
1.5 V
VOL
t
100 Ω
ı
tPHL
tPLH
i6n135_01
Fig. 1 - Switching Times
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
High
Low
TEST CONDITION
PART
SYMBOL
IF = 0 mA, VCM = 10 VP-P, VCC = 5 V, RL = 4.1 kΩ
6N135
|CMH|
MIN.
1000
TYP.
MAX.
UNIT
V/μs
IF = 0 mA, VCM = 10 VP-P, VCC = 5 V, RL = 1.9 kΩ
6N136
|CMH|
1000
V/μs
IF = 16 mA, VCM = 10 VP-P, VCC = 5 V, RL = 4.1 kΩ
6N135
|CML|
1000
V/μs
IF = 16 mA, VCM = 10 VP-P, VCC = 5 V, RL = 1.9 kΩ
6N136
|CML|
1000
V/μs
VCM
10 V
IF
1
8
2
7
90 %
10 %
5V
10 %
A
B
3
6
4
5
VFF
90 %
0V
RL
VO
VO
t
tr
tf
5V
A: IF = 0 mA
+VCM
Pulse generator
Z O = 50 Ω
t r,t f = 8 ns
VO
VOL
i6n135_02
t
B: IF = 16 mA
t
Fig. 2 - Common-Mode Interference Immunity
Document Number: 83909
Rev. 1.7, 19-Oct-10
For technical questions, contact: [email protected]
www.vishay.com
3
6N1135, 6N1136
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Climatic classification
(according to IEC 68 part 1)
TYP.
MAX.
UNIT
55/110/21
Pollution degree (DIN VDE 0109)
2
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
CTI
175
VIOTM
VIOTM
8000
V
VIORM
VIORM
630
V
RIO
1012
Ω
RIO
1011
VIO = 500 V, Tamb = 25 °C
Isolation resistance
VIO = 500 V, Tamb = 100 °C
PSI
399
Ω
PSI
500
mA
ISI
ISI
300
mW
TSI
TSI
175
Creepage distance
°C
7
mm
Clearance distance
7
mm
Insulation thickness
0.2
mm
Note
• As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
2.3
8
- 55 °C
I C - Collector Current (mA)
7
1.9
1.7
1.5
1.3
25 °C
1.1
50 °C
110 °C
0.9
0.7
0.01
17585
0.10
1.00
10.00
IF - Forward Current (mA )
100.00
I C - Collector Current (mA )
Fig. 3 - Forward Voltage vs. Forward Current
17586
12
11
10
9
8
7
6
5
4
3
2
1
0
IF = 25 mA
20 mA
15 mA
10 mA
5 mA
Tamb = 25 C,
VCC= 5 V, non-saturated
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VCE - Collector Emitter Voltage (V)
Fig. 4 - Collector Current vs. Collector Emitter Voltage
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4
6
Tamb = 25 C,
VCC= 5 V,
saturated
IF = 25 mA
20 mA
15 mA
5
4
10 mA
3
2
5 mA
1
0
0.0
17629
1 mA
0.1
0.2
0.3
0.4
0.5
VCE - Collector Emitter Voltage (V)
Fig. 5 - Collector Current vs. Collector Emitter Voltage
ICE0 - Collector Emitter Leakage Current (nA)
V F - Forward Voltage (V)
2.1
1000
100
VCC = VCE = 15 V
10
1
0.1
VCC = VCE = 5 V
0.01
- 55 - 35 - 15 5 25 45 65 85 105 125
17590
Tamb - Ambient Temperature (°C)
Fig. 6 - Collector Emitter Dark Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 83909
Rev. 1.7, 19-Oct-10
6N1135, 6N1136
High Speed Optocoupler, 1 MBd, Vishay Semiconductors
Photodiode with Transistor Output,
110 °C Rated
2.0
2.0
1.4
1.2
5 mA
1.0
10 mA
0.8
0.6
0.4
0.2
17630
Normalized to IF = 10 mA,
Tamb = 25 C, VCC = 5 V
VO = 0.4 V, saturated
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
Fig. 7 - Normalized Current Transfer Ratio vs.
Ambient Temperature
17632
1.50
10 mA
1.25
1.00
0.75
16 mA
Normalized to IF = 16 mA,
Tamb = 25 C, VCC = 5 V
VO = 0.4 V, saturated
0.00
- 55 - 35 - 15 5 25 45 65 85 105 125
17631
Tamb - Ambient Temperature (°C)
Fig. 8 - Normalized Current Transfer Ratio vs.
Ambient Temperature
CTR Norm - Normalized CTR
CTR Norm - Normalized CTR
5 mA
1.75
17633
0.6
0.4
0.2
Normalized to IF = 10 mA,
Tamb = 25 C, VCC = 5 V
VO = 5 V, non saturated
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
IF = 1 mA
5 mA
1.6
1.4
1.2
1.0
10 mA
0.8
16 mA
0.6
0.4
0.2
Normalized to IF = 16 mA,
Tamb = 25 C, VCC = 5 V
VO = 5 V, non saturated
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
1.3
6
4
10 mA
VCC = 5 V,
VO = 0.4 V, saturated
2 mA
1.1
1.0
0.9
1 mA
0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
Fig. 9 - Output Current vs. Temperature
0.6
0.5
0.10
17634
25 ºC
0 ºC
- 55 ºC
0.8
0.7
1
Document Number: 83909
Rev. 1.7, 19-Oct-10
110 ºC
50 ºC
1.2
16 mA
5
Normalized h FE
I C - Collector Current (mA)
0.8
1.4
IF = 20 mA
17587
10 mA
1.0
Fig. 11 - Normalized Current Transfer Ratio vs.
Ambient Temperature
7
2
1.2
1.8
2.00
3
5 mA
1.4
2.0
IF = 1 mA
2.25
0.25
1.6
Fig. 10 - Normalized Current Transfer Ratio vs.
Ambient Temperature
2.50
0.50
IF = 1 mA
1.8
IF = 1 mA
1.6
CTR Norm - Normalized CTR
CTR Norm - Normalized CTR
1.8
Normalized to
IB = 20 μA, Tamb = 25 °C
VO = 5 V, non saturated
1.00
10.00
100.00
IB - Base Current (mA)
Fig. 12 - Normalized hFE vs. Base Current
For technical questions, contact: [email protected]
www.vishay.com
5
6N1135, 6N1136
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
Vishay Semiconductors
3000
2.0
110 °C
1.8
VCC = VO = 5 V,
t - Switching Time (ns)
1.6
Normalized h FE
1.4
1.2
25 °C
1.0
0 °C
0.8
- 55 °C
0.6
0.4
0.2
Normalized to
IB = 20 μA, Tamb = 25 °C
VO = 0.4 V, saturated
0.0
0.10
1.00
10.00
2000
toff
1500
1000
ton
500
0
0.0
100.00
IB - Base Current (mA)
17635
IF = 16 mA
Tamb = 25 °C
2500
50 °C
17638
Fig. 13 - Normalized hFE vs. Base Current
25 000
VCC = VO = 5 V,
- 55 °C
25 °C
110 °C
VCC = 5 V
17636
t - Switching Time (ns)
Ip - Photo Current (µA)
Tamb = 25 °C
0 °C
50 °C
0.01
0.01
10 000
5000
ton
0
0.1
1
10
IF - Forward Current (mA)
100
0
17639
5
10
15
RL - Load Resistance (kΩ)
Fig. 17 - Switching Time vs. Load Resistance
t P - Propagation Delay time (ns)
1600
- 55 °C
VCC = 5 V, IF = 16 mA
RL = 1.9 kΩ, Tamb = 25 °C
1400
0 °C
tPLH (3 V)
1200
0.1
1000
25 °C
0.01
0.001
0.0001
0.01
17637
50 °C
110 °C
VCC = 5 V
normalized to
IF = 16 mA
0.10
1.00
10.00
IF - Forward Current (mA)
100.00
Fig. 15 - Photo Current vs. Forward Current
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6
20
1800
10
Norm. Photo Current
toff
15 000
Fig. 14 - Photo Current vs. Forward Current
1
IF = 16 mA
20 000
1
0.1
2.5
Fig. 16 - Switching Time vs. Load Resistance
100
10
0.5
1.0
1.5
2.0
RL - Load Resistance (k Ω)
17588
800
600
tPLH (1.5 V)
tPH L (1.5 V)
400
200
tPH L (3 V)
0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
Fig. 18 - Propagation Delay vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 83909
Rev. 1.7, 19-Oct-10
6N1135, 6N1136
High Speed Optocoupler, 1 MBd, Vishay Semiconductors
Photodiode with Transistor Output,
110 °C Rated
3000
t P - Propagation Delay time (ns)
Tamb = 25 °C, VCC = 5 V,
IF = 16 mA, RL = 4.1 kΩ
2500
tPLH (3 V)
2000
tPLH (1.5 V)
1500
1000
17589
tPHL (1.5 V)
500
tPHL (3 V)
0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
Fig. 19 - Propagation Delay vs. Ambient Temperature
Small Signal Current Transfer Ratio
0.6
0.5
0.4
0.3
0.2
VCC = VO = 5 V,
RL = 100 Ω, RLED = 50 Ω,
Tamb = 25 °C
0.1
0.0
0
17591
5
10
15
20
IF - Forward Current (mA)
25
Fig. 20 - Small Signal CTR vs. Forward Current
ΔIF/ΔIO - Small Signal Current
Transfer Ratio
0.6
VCC = 5 V, RL = 100 Ω
0.5
0.4
0.3
0.2
0.1
0
0
i6n135_11
5
10
15
20
25
IF - Forward Current (mA)
Fig. 21 - Small Signal Current Transfer Ratio vs.
Quiescent Input Current
Document Number: 83909
Rev. 1.7, 19-Oct-10
For technical questions, contact: [email protected]
www.vishay.com
7
6N1135, 6N1136
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Pin one ID
4
3
2
1
5
6
7
8
6.645 ± 0.165
ISO method A
9.77 ± 0.14
0.95 ± 0.19
7.62 typ.
0.79
4° typ.
3.555 ± 0.255
6.095 ± 0.255
1.27
10°
0.70 ± 0.19
0.51 ± 0.05
3.045 ± 0.255
3° to 9°
2.54 typ.
0.25 ± 0.05
i178006
Option 6
Option 9
7.62 typ.
10.3 max.
7.62 typ.
3.5 ± 0.3
0.1 ± 0.1
3.6 ± 0.3
0.1 min.
2.55 ± 0.25
0.6 min.
8 min.
20802-12
10.16 typ.
PACKAGE MARKING
6N1135
V YWW H 68
21764-70
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8
For technical questions, contact: [email protected]
Document Number: 83909
Rev. 1.7, 19-Oct-10
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000