TOSHIBA 6N135_07

6N135/6N136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output
FEATURES
• Isolation test voltages: 5300 VRMS
• TTL compatible
• High bit rates: 1.0 Mbit/s
• High common-mode interference immunity
NC
1
8
C (VCC)
A
2
7
B (VB)
C
3
6
C (VO)
• Open-collector output
NC
4
5
E (GND)
• External base wiring possible
• Bandwidth 2.0 MHz
i179081
• Lead (Pb)-free component
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a GaAIAs
infrared emitting diode, optically coupled with an integrated
photo detector which consists of a photo diode and a
high-speed transistor in a DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference
voltages.
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 available with option 1
• CSA 93751
ORDER INFORMATION
PART
6N135
6N136
6N135-X007
6N136-X006
6N136-X007
6N136-X009
REMARKS
CTR ≥ 7 %, DIP-8
CTR ≥ 19 %, DIP-8
CTR ≥ 7 %, SMD-8 (option 7)
CTR ≥ 19 %, DIP-8 400 mil (option 6)
CTR ≥ 19 %, SMD-8 (option 7)
CTR ≥ 19 %, SMD-8 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5.0
V
IF
25
mA
IFSM
50
mA
INPUT
Reverse voltage
Forward current
Peak forward current
Maximum surge forward current
t = 1.0 ms, duty cycle 50 %
t ≤ 1.0 µs, 300 pulses/s
1.0
A
Rth
700
K/W
Pdiss
45
mW
Supply voltage
VS
- 0.5 to 15
V
Output voltage
VO
- 0.5 to 15
V
VEBO
5.0
V
IO
8.0
mA
16
mA
IB
5.0
mA
300
K/W
Pdiss
100
mW
Thermal resistance
Power dissipation
Tamb = 70 °C
OUTPUT
Emitter base voltage
Output current
Maximum Output current
Base current
Thermal resistance
Power dissipation
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Tamb = 70 °C
For technical questions, contact: [email protected]
Document Number: 83604
Rev. 1.5, 07-May-08
6N135/6N136
High Speed Optocoupler, 1 MBd,
Phtotdiode with Transistor Output
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Vishay Semiconductors
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
t = 1.0 s
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
RIO
≥
COUPLER
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, Nov. 74)
Pollution degree (DIN VDE 0109)
Isolation resistance
2.0
VIO = 500 V, Tamb = 100 °C
Storage temperature range
Ambient temperature range
Soldering temperature
(2)
Ω
Ω
1011
Tstg
- 55 to + 125
°C
Tamb
- 55 to + 100
°C
Tsld
260
°C
max. ≤ 10 s, dip soldering
≥ 0.5 mm from case bottom
Notes
(1) T
amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this
document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
1.6
1.9
V
10
µA
INPUT
Forward voltage
IF = 1.6 mA
VF
Breakdown voltage
IR = 10 µA
VBR
Reverse current
VR = 5.0 V
IR
0.5
VR = 0 V, f = 1.0 MHz
CO
125
pF
IF = 1.6 mA
ΔVF/ΔTA
- 1.7
mV/°C
Logic low supply current
IF = 1.6 mA, VO = open,
VCC = 15 V
ICCL
150
µA
Logic high supply current
IF = 0 mA, VO = open,
VCC = 15 V
ICCH
0.01
1
µA
Capacitance
Temperature coefficient, forward
voltage
5.0
V
OUTPUT
Output voltage, output low
Output current, output high
IF = 16 mA, IO = 1.1 mA,
VCC = 4.5 V
6N135
VOL
0.1
0.4
V
IF = 16 mA, IO = 2.4 mA,
VCC = 4.5 V
6N136
VOL
0.1
0.4
V
IF = 0 mA, VO = VCC = 5.5 V
IOH
3.0
500
nA
IF = 0 mA, VO = VCC = 15 V
IOH
0.01
1
µA
f = 1.0 MHz
CIO
0.6
COUPLER
Capacitance (input to output)
pF
Note
Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the
device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83604
Rev. 1.5, 07-May-08
For technical questions, contact: [email protected]
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169
6N135/6N136
High Speed Optocoupler, 1 MBd,
Phtotdiode with Transistor Output
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
IF = 16 mA, VO = 0.4 V,
VCC = 4.5 V
6N135
CTR
7
16
MAX.
UNIT
%
6N136
CTR
19
35
%
IF = 16 mA, VO = 0.5 V,
VCC = 4.5 V
6N135
CTR
5
%
6N136
CTR
15
%
TEST CONDITION
PART
SYMBOL
MIN.
SWITCHING CHARACTERISTICS
PARAMETER
High to low
Low to high
TYP.
MAX.
UNIT
IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ
6N135
tPHL
0.3
1.5
µs
IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ
6N136
tPHL
0.2
0.8
µs
IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ
6N135
tPLH
0.3
1.5
µs
IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ
6N136
tPLH
0.2
0.8
µs
TYP.
MAX.
UNIT
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
High
Low
TEST CONDITION
PART
SYMBOL
IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ
6N135
|CMH|
MIN.
1000
V/µs
IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ
6N136
|CMH|
1000
V/µs
IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ
6N135
|CML|
1000
V/µs
IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ
6N136
|CML|
1000
V/µs
SYMBOL
MIN.
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
Climatic classification
(according to IEC 68 part 1)
TYP.
MAX.
UNIT
55/100/21
Comparative tracking index
CTI
175
399
VIOTM
8000
V
VIORM
890
V
PSO
500
mW
ISI
300
mA
TSI
175
°C
Creepage distance
standard DIP-8
7
mm
Clearance distance
standard DIP-8
7
mm
Creepage distance
400 mil DIP-8
8
mm
Clearance distance
400 mil DIP-8
8
mm
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
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For technical questions, contact: [email protected]
Document Number: 83604
Rev. 1.5, 07-May-08
6N135/6N136
High Speed Optocoupler, 1 MBd,
Phtotdiode with Transistor Output
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
20
18
15
25 °C
0 °C
10
5
0
1
1.1
1.2
1.3
1.4
1.5
1.6
40
60
80
6
Tamb - Ambient Temperature (°C)
Detector
80
60
40
Emitter
20
0
i6n135_05
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Permissible Power Dissipation vs. Temperature
Document Number: 83604
Rev. 1.5, 07-May-08
IF = 1 mA
5
10
15
20
VO - Output Voltage (V)
at VO = 0.4 V, VCC = 5 V
IF = 20 mA
5
IF = 16 mA
4
IF = 10 mA
3
2
IF = 5 mA
IF = 2 mA
1
IF = 1 mA
0
20 40
60
80 100 120
Tamb - Temperature (°C)
Fig. 5 - Output Current vs. Temperature
tP - Propagation Delay Time (ns)
100
40
IF = 5 mA
2
20987
120
20
IF = 10 mA
4
0
- 60 - 40 - 20
100
Fig. 2 - Permissible Forward LED Current vs. Temperature
0
IF = 20 mA
IF = 15 mA
Fig. 4 - Output Current vs. Output Voltage
IO - Output Current (mA)
IF - LED Current (mA)
10
20
IF = 25 mA
8
6
i6n135_04
Total Power (mW)
10
0
30
0
IF = 30 mA
0
Fig. 1 - LED Forward Current vs. Forward Voltage
0
IF = 35 mA
12
20986
20
IF = 40 mA
14
1.7
VF - LED Forward Voltage
20992
(VCC = 5 V)
16
IO - Output Current (mA)
IF - LED Current (mA)
75 °C
900
6N136 at VCC = 5 V
IF = 16 mA, RL = 1.9 kΩ
800
700
tPLH at 1.5 V
tPLH at 3 V
600
500
400
tPHL at 1.5 V
300
200
tPHL at 3 V
100
0
- 60 - 40 - 20
i6n135_08
0
20
40
60
80 100
Tamb - Temperature (°C)
Fig. 6 - Propagation Delay vs. Ambient Temperature
For technical questions, contact: [email protected]
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171
6N135/6N136
High Speed Optocoupler, 1 MBd,
Phtotdiode with Transistor Output
1400
0.6
6N135 at VCC = 5 V
IF = 16 mA, RL = 4.1 kΩ
1200
ΔIF/ΔIO/Small Signal Current
Transfer Ratio
tP - Propagation Delay Time (ns)
Vishay Semiconductors
1000
800
tPLH
600
400
tPHL
200
0.4
0.3
0.2
0.1
0
0
- 60 - 40 - 20
i6n135_09
(VCC = 5 V, RL = 100 Ω)
0.5
0
20
40
60
80 100
0
Tamb - Temperature (°C)
5
Fig. 7 - Propagation Delay vs. Ambient Temperature
10
15
20
25
IF/mA
i6n135_11
Fig. 9 - Small Signal Current Transfer Ratio vs.
Quiescent Input Current
IOH - Collector, IC (nA)
100
10
VCC = VO = 15 V
1
VCC = VO = 5 V
0.1
0.01
0.001
- 60 - 40 - 20 0
i6n135_10
20
40
60
80 100
Tamb - Temperature (°C)
Fig. 8 - Logic High Output Current vs. Temperature
Pulse generator
IF
Z O = 50 Ω
t r ,t f = 5 ns
duty cycle 10 %
t ≤ 100 µs
t
5V
1
8
2
7
3
6
VO
4
5
CL
15 pF
IF
IF Monitor
VO
5V
RL
1.5 V
VOL
t
100 Ω
ı
tPHL
tPLH
i6n135_01
Fig. 10 - Switching Times
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For technical questions, contact: [email protected]
Document Number: 83604
Rev. 1.5, 07-May-08
6N135/6N136
High Speed Optocoupler, 1 MBd,
Phtotdiode with Transistor Output
Vishay Semiconductors
VCM
10 V
IF
1
8
2
7
90 %
10 %
5V
10 %
A
B
3
6
4
5
90 %
0V
RL
VO
VFF
t
tf
tr
VO
5V
A: IF = 0 mA
+VCM
t
VO
Pulse generator
Z O = 50 Ω
t r,t f = 8 ns
B: IF = 16 mA
VOL
i6n135_02
t
Fig. 11 - Common-Mode Interference Immunity
PACKAGE DIMENSIONS in inches (millimeters)
Pin one ID
4
3
2
1
5
6
7
8
0.255 (6.48)
0.268 (6.81)
ISO method A
0.379 (9.63)
0.390 (9.91)
0.030 (0.76)
0.045 (1.14)
0.300 (7.62)
typ.
0.031 (0.79)
4° typ.
0.130 (3.30)
0.150 (3.81)
0.050 (1.27)
10°
0.020 (0.51)
0.018 (0.46)
0.022 (0.56)
3° to 9°
0.035 (0.89)
0.230 (5.84)
0.110 (2.79)
0.250 (6.35)
0.130 (3.30)
0.008 (0.20)
0.100 (2.54) typ.
0.012 (0.30)
i178006
Option 6
Option 7
Option 9
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.300 (7.62)
typ.
0.375 (9.53)
0.395 (10.03 )
0.300 (7.62)
ref.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
Document Number: 83604
Rev. 1.5, 07-May-08
0.331 (8.4)
min.
0.406 (10.3)
max.
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30 ) typ.
0.020 (0.51 )
0.040 (1.02 )
15° max.
0.315 (8.00)
min.
For technical questions, contact: [email protected]
18450
www.vishay.com
173
6N135/6N136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Phtotdiode with Transistor Output
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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174
For technical questions, contact: [email protected]
Document Number: 83604
Rev. 1.5, 07-May-08
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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