VISHAY 6N1136

6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
•
•
•
•
•
•
•
•
•
Operating Temperature from -55 °C to +110 °C
Isolation Test Voltage: 5300 VRMS
TTL Compatible
High Bit Rates: 1.0 MBd
Bandwidth 2.0 MHz
Open-Collector Output
External Base Wiring Possible
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
NC
1
8
C (VCC)
A
2
7
B (VB)
C
3
6
C (VO)
NC
4
5
E (GND)
e3
i179081
Pb
Pb-free
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference voltages
Order Information
Description
The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Part
6N1135
Remarks
CTR ≥ 7 %, DIP-8
6N1136
CTR ≥ 19 %, DIP-8
6N1135-X007
CTR ≥ 7 %, SMD-8 (option 7)
6N1136-X006
CTR ≥ 19 %, DIP-8 400 mil (option 6)
6N1136-X007
CTR ≥ 19 %, SMD-8 (option 7)
6N1136-X009
CTR ≥ 19 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Reverse voltages
Forward current
Peak forward current
t = 1.0 ms, duty cycle 50 %
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s
Thermal resistance
Power dissipation
Document Number 83909
Rev. 1.5, 26-Oct-04
Tamb = 70 °C
Symbol
Value
Unit
VR
5.0
V
IF
25
mA
IFM
50
mA
IFSM
1.0
A
Rth
700
K/W
Pdiss
45
mW
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1
6N1135/ 6N1136
Vishay Semiconductors
Output
Symbol
Value
Unit
Supply voltage
Parameter
Test condition
VCC
- 0.5 to 15
V
Output voltage
VO
- 0.5 to 15
V
VEBO
5.0
V
IO
8.0
mA
16
mA
IB
5.0
mA
Emitter-base voltage
Output current
Maximum output current
Base current
Thermal resistance
Tamb = 70 °C
Power dissipation
300
K/W
Pdiss
100
mW
Coupler
Symbol
Value
Unit
Isolation test voltage (between t = 1.0 s
emitter and detector climate per
DIN 50014 part 2, NOV 74
Parameter
Test condition
VISO
5300
VRMS
Storage temperature range
Tstg
- 55 to + 125
°C
Tamb
- 55 to + 110
°C
Tsld
260
°C
Ambient temperature range
Soldering temperature
max. ≤ 10 s, dip soldering
≥ 0.5 mm from case bottom
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Forward voltage
IF = 16 mA
VF
Breakdown voltage
IR = 10 µA
VBR
Reverse current
VR = 5.0 V
IR
Capacitance
VR = 0 V, f = 1.0 MHz
Temperature coefficient, forward voltage
IF = 16 mA
Min
Typ.
Max
Unit
1.6
1.9
V
0.5
10
µA
5.0
V
CI
125
pF
∆VF/∆TA
-1.7
mV/°C
Output
Parameter
Logic low supply current
Test condition
Part
IF = 16 mA, VO open, VCC = 15 V
Symbol
Min
Typ.
ICCL
150
Max
Unit
µA
Supply current, logic high
IF = 0 mA, VO open, VCC = 15 V
ICCH
0.01
1
µA
Output voltage, output low
IF = 16 mA, VCC = 4.5 V,
IO = 1.1 mA
6N1135
VOL
0.1
0.4
V
IF = 16 mA, VCC = 4.5 V,
IO = 2.4 mA
6N1136
VOL
0.1
0.4
V
Output current, output high
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2
IF = 0 mA, VO = VCC = 5.5 V
IOH
3.0
500
nA
IF = 0 mA, VO = VCC = 15 V
IOH
0.01
1
µA
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
Coupler
Parameter
Test condition
Capacitance (input-output)
f = 1.0 MHz
Current Transfer Ratio
IF = 16 mA, VO = 0.4
V, VCC = 4.5 V
IF = 16 mA, VO = 0.5
V, VCC = 4.5 V
Part
Symbol
Min
Typ.
CIO
Max
Unit
0.6
pF
6N1135
CTR
7
16
%
6N1136
CTR
19
35
%
6N1135
CTR
5
%
6N1136
CTR
15
%
Min
Switching Characteristics
Parameter
Test condition
High-low
Low-high
Part
Symbol
Typ.
Max
Unit
IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ
6N1135
tPHL
0.3
1.5
µs
IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ
6N1136
tPHL
0.2
0.8
µs
IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ
6N1135
tPLH
0.3
1.5
µs
IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ
6N1136
tPLH
0.2
0.8
µs
Pulse generator
ZO=50 Ω
tr,tf=5 ns
duty cycle 10%
t≤100 µs
IF
t
5V
1
8
2
7
3
6
VO
4
5
CL
15 pF
IF
IF Monitor
VO
5V
RL
1.5 V
VOL
t
ı
100 Ω
tPHL
tPLH
i6n135_01
Figure 1. Switching Times
Common Mode Transient Immunity
Parameter
High
Low
Test condition
Part
Symbol
IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ
6N1135
| CMH |
1000
V/µs
IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ
6N1136
| CMH |
1000
V/µs
IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ
6N1135
| CML |
1000
V/µs
IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ
6N1136
| CML |
1000
V/µs
Document Number 83909
Rev. 1.5, 26-Oct-04
Min
Typ.
Max
Unit
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6N1135/ 6N1136
Vishay Semiconductors
VCM
10 V
IF
A
B
1
8
2
7
3
6
4
5
90%
10%
5V
0V
RL
VO
VFF
10%
VO
90%
t
tf
tr
5V
A: IF=0 mA
+VCM
Pulse generator
ZO=50
tr,tf=8 ns
t
VO
B: IF=16 mA
VOL
i6n135_02
t
Figure 2. Common-Mode Interference Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Test condition
Symbol
Min
Typ.
Climatic Classification
(according to IEC 68 part 1)
55/110/21
Pollution degree (DIN VDE
0109)
2.0
175
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
VIOTM
VIORM
Isolation resistance
PSI
Max
Unit
399
VIOTM
8000
VIORM
630
V
12
Ω
VIO = 500 V, Tamb = 25 °C
RIO
10
VIO = 500 V, Tamb = 100 °C
RIO
1011
V
Ω
PSI
500
mA
ISI
ISI
300
mW
TSI
TSI
175
°C
Creepage
7.0
mm
Clearance
7.0
mm
Insulation thickness
0.2
mm
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Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
2.3
–55°C
0°C
1.9
1.7
1.5
1.3
25°C
1.1
50°C
110°C
0.9
0.7
0.01
0.10
1.00
10.00
100.00
IF – Forward Current ( mA )
17585
I C – Collector Current ( mA )
Figure 3. Forward Voltage vs. Forward Current
12
11
10
9
8
7
6
5
4
3
2
1
0
1000
100
VCC = VCE = 15 V
10
1
0.01
–55 –35 –15 5 25 45 65 85 105 125
17590
Tamb – Ambient Temperature ( _C )
Figure 6. Collector-Emitter Dark Current vs. Ambient Temperature
2.0
IF = 25 mA
20 mA
15 mA
10 mA
5 mA
Tamb = 25_C,
VCC= 5 V, non–saturated
1.8
VCE – Collector Emitter Voltage ( V )
17586
1.4
1.2
0.6
0.4
0.2
25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
2.50
Tamb = 25_C,
VCC= 5 V,
saturated
IF = 25 mA
20 mA
15 mA
5
4
10 mA
3
2
5 mA
1
0
0.0
Normalized to IF = 10 mA,
Tamb = 25_C, VCC= 5 V
VO = 0.4 V, saturated
Figure 7. Normalized Current Transfer Ratio vs. Ambient
Temperature
1 mA
0.1
0.2
0.3
0.4
0.5
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Current vs. Collector Emitter Voltage
Document Number 83909
Rev. 1.5, 26-Oct-04
CTR Norm – Normalized CTR
I C – Collector Current ( mA )
6
10 mA
0.8
0.0
–55 –35 –15 5
8
7
5 mA
1.0
17630
Figure 4. Collector Current vs. Collector Emitter Voltage
IF = 1 mA
1.6
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
17629
VCC = VCE = 5 V
0.1
CTR Norm – Normalized CTR
V F – Forward Voltage ( V )
2.1
ICE0– Collector Emitter Leakage Current (nA)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2.25
IF = 1 mA
2.00
5 mA
1.75
1.50
10 mA
1.25
1.00
0.75
0.50
0.25
16 mA
Normalized to IF = 16 mA,
Tamb = 25_C, VCC= 5 V
VO = 0.4 V, saturated
0.00
–55 –35 –15 5
17631
25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
Figure 8. Normalized Current Transfer Ratio vs. Ambient
Temperature
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6N1135/ 6N1136
Vishay Semiconductors
1.4
7
17587
1.3
6
4
3
2
10 mA
VCC= 5 V,
VO = 0.4 V, saturated
2 mA
1.1
25°C
1.0
1 mA
0
–55 –35 –15 5 25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
0.6
0.5
0.10
17634
10 mA
0.8
0.6
1.4
Normalized h FE
CTR Norm – Normalized CTR
1.2
1.2
0.8
Normalized to
IB = 20 µA, Tamb = 25_C,
VO = 0.4 V, saturated
0.2
0.0
0.10
25 45 65 85 105 125
1.00
–55°C
1.2
10 mA
16 mA
0.6
Normalized to IF = 16 mA,
Tamb = 25_C, VCC= 5 V
VO = 5 V, non–saturated
0.0
–55 –35 –15 5
10.00
Figure 11. Normalized Current Transfer Ratio vs. Ambient
Temperature
0°C
25°C
1.00
50°C
0.10
110°C
VCC= 5 V
0.01
0.01
25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
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Ip – Photo Current ( mA )
1.4
0.8
100.00
Figure 13. Normalized HFE vs. Base Current
5 mA
1.0
10.00
IB – Base Current ( mA )
17635
100.00
IF = 1 mA
1.6
0.2
–55°C
0.6
Figure 10. Normalized Current Transfer Ratio vs. Ambient
Temperature
0.4
0°C
0.4
Tamb – Ambient Temperature ( °C )
1.8
25°C
1.0
Normalized to IF = 10 mA,
Tamb = 25_C, VCC= 5 V
VO = 5 V, non–saturated
2.0
50°C
1.6
5 mA
1.0
110°C
1.8
1.4
17632
100.00
2.0
1.6
0.2
1.00
10.00
IB – Base Current ( mA )
Figure 12. Normalized HFE vs. Base Current
IF = 1 mA
1.8
0.0
–55 –35 –15 5
CTR Norm – Normalized CTR
Normalized to
IB = 20 µA, Tamb = 25_C,
VO = 5 V, non saturated
0.7
2.0
6
–55°C
0.8
Figure 9. Output Current vs. Temperature
17633
0°C
0.9
1
0.4
110°C
50°C
1.2
16 mA
5
Normalized h FE
I C – Collector Current ( mA )
IF = 20 mA
17636
0.10
1.00
10.00
100.00
IF – Forward Current ( mA )
Figure 14. Photo Current vs. Forward Current
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
1800
RL = 1.9 kΩ, Tamb = 25 °C
1400
0°C
tPLH ( 3V )
1200
0.1
1000
25°C
0.01
50°C
110°C
0.001
0.0001
0.01
17637
VCC = 5 V
normalized to
IF = 16 mA
0.10
1.00
10.00
IF – Forward Current ( mA )
100.00
17588
3000
t P – Propagation Delay time ( ns )
t – Switching Time ( ns )
600
tPHL ( 1.5V )
400
200
tPHL ( 3V )
0
–55 –35 –15 5 25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
3000
VCC = VO = 5 V,
IF = 16 mA
2500
Tamb = 25 °C, VCC= 5 V,
IF = 16 mA, RL = 4.1 kΩ
2500
Tamb = 25 °C
2000
tPLH ( 3V )
2000
toff
1500
tPLH ( 1.5V )
1500
1000
1000
ton
500
0
0.0
0.5
1.0
1.5
2.0
tPHL ( 1.5V )
500
tPHL ( 3V )
0
–55 –35 –15 5
2.5
RL – Load Resistance ( kΩ )
17638
25 45 65 85 105 125
Tamb – Ambient Temperature ( °C )
17589
Figure 19. Propagation Delay vs. Ambient Temperature
Figure 16. Switching Time vs. Load Resistance
0.6
25000
Small Signal Current Transfer Ratio
VCC = VO = 5 V,
IF = 16 mA
20000
Tamb = 25 °C
toff
15000
10000
5000
ton
0
0.5
0.4
0.3
0.2
VCC = VO = 5 V,
RL = 100 Ω, RLED = 50 Ω,
0.1
Tamb = 25_C
0.0
0
17639
tPLH ( 1.5V )
800
Figure 18. Propagation Delay vs. Ambient Temperature
Figure 15. Photo Current vs. Forward Current
t – Switching Time ( ns )
VCC= 5 V, IF = 16 mA
1600
–55°C
1
Norm. Photo Current
t P – Propagation Delay time ( ns )
10
5
10
15
20
RL – Load Resistance ( kΩ )
Figure 17. Switching Time vs. Load Resistance
Document Number 83909
Rev. 1.5, 26-Oct-04
0
17591
5
10
15
20
25
IF – Forward Current ( mA )
Figure 20. Small Signal CTR vs. Forward Current
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6N1135/ 6N1136
Vishay Semiconductors
Figure 21. Small Signal Current Transfer Ratio vs. Quiescent Input
Current
∆iF/∆iO / Small Signal Current
Transfer Ratio
0.6
(VCC = 5.0 V, RL = 100 Ω)
0.5
0.4
0.3
0.2
0.1
0
5
0
10
15
20
25
IF / mA
i6n135_11
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
i178006
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8
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
Document Number 83909
Rev. 1.5, 26-Oct-04
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
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6N1135/ 6N1136
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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10
Document Number 83909
Rev. 1.5, 26-Oct-04