DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INFORMATION ADVANCED INFORMATION Product Summary Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V Features ID TA = +25°C Low On-Resistance Low Input Capacitance 160mΩ @ VGS = 10V 2.9A 200mΩ @ VGS = 4.5V 2.6A 250mΩ @ VGS = -10V -2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 300mΩ @ VGS = -4.5V -2.1A RDS(ON) MAX Mechanical Data Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Case: V-DFN5045-12 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.056 grams (Approximate) Applications High-Efficiency Bridge Rectifiers Pin 1 V-DFN5045-12 G1 S1 S1 G2 S2 S2 D1/D2 D1/D2 D3/D4 D3/D4 G4 S4 S4 G3 S3 S3 Bottom View Top View S3 7 6 S2 Q3 (Pch) Q2 (Pch) Pin Pin Out 5 Out S3 8 S2 Pin Pin Out 4 Out G3 9 G2 Pin Pin Out S4 10 Q4 (Nch) S1 3 Out Q1 (Nch) Pin Pin Out 2 Out S4 11 S1 Pin Pin Out 1 Out G4 12 G1 Pin Pin Out Out D3,D4 to backside D1,D2 to backside Internal Schematic Ordering Information (Note 4) Part Number DMHC10H170SFJ-13 Notes: Case V-DFN5045-12 Tape Width 12mm Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information C170SJ YY WW DMHC10H170SFJ Document number: DS37571 Rev. 3 - 2 =Manufacturer’s Marking C170SJ = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 1 of 9 www.diodes.com January 2016 © Diodes Incorporated DMHC10H170SFJ Maximum Ratings Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION ADVANCED INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, Duty Cycle = 1%) ID IS IDM Value 100 ±20 2.9 2.3 2.5 13 Unit V V Value -100 ±20 -2.3 -1.9 -2.4 -11 Unit V V A A A Maximum Ratings Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State TA = +25°C TA = +70°C Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, Duty Cycle = 1%) ID IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Note: TA = +25°C Symbol PD RJA RJC TJ, TSTG Value 2.1 60 6 -55 to +150 Unit W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. DMHC10H170SFJ Document number: DS37571 Rev. 3 - 2 2 of 9 www.diodes.com January 2016 © Diodes Incorporated DMHC10H170SFJ ADVANCE INFORMATION ADVANCED INFORMATION Electrical Characteristics Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 111 121 0.9 3.0 160 200 1.0 V Static Drain-Source On-Resistance 1.0 V VDS = VGS, ID = 250µA VGS = 10V, ID = 5A VGS = 4.5V, ID = 5A VGS = 0V, IS = 10A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 1,167 36 25 1.3 4.9 9.7 2.0 2.0 10.5 11.1 42.6 12.8 30.3 35.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 80V, ID = 12.8A ns VDD = 50V, RG = 25Ω, ID = 12.8A ns nC VGS = 0V, IS = 12.8A, dI/dt = 100A/μs VGS = 0V, IS = 12.8A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge mΩ Test Condition Electrical Characteristics Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -100 1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD -1.6 191 213 -0.9 -3.0 250 300 -1.2 V Static Drain-Source On-Resistance -1.0 V VDS = VGS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID =-5A VGS = 0V, IS = -5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 1,239 42 28 13 8.4 17.5 2.8 3.2 9.1 14.9 57.4 34.4 25.2 24.5 pF VDS = -25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -60V, ID = -5A ns VDD = -50V, Rg = 9.1Ω, ID = -5A ns nC VGS = 0V, IS = -5A, di/dt = 100A/μs VGS = 0V, IS = -5A, di/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ Test Condition 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMHC10H170SFJ Document number: DS37571 Rev. 3 - 2 3 of 9 www.diodes.com January 2016 © Diodes Incorporated DMHC10H170SFJ Typical Characteristics - N-CHANNEL 10 VDS= 5.0V VGS=5.0V 12.0 VGS=4.5V VGS=4.0V 9.0 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=10.0V 6.0 VGS=3.5V 6 VGS=3.0V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 250 200 4.5V 150 10.0V 50 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 2. Typical Transfer Characteristic 300 100 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mW) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mW) -55℃ 0 0 25℃ 125℃ 2 0.0 85℃ 150℃ 4 3.0 500 450 400 350 300 250 200 150 ID=5A 100 50 0 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ONRESISTANCE (NORMALIZED) 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) ADVANCE INFORMATION ADVANCED INFORMATION 15.0 VGS=4.5V 0.4 150℃ 0.3 125℃ 0.2 85℃ 25℃ 0.1 0 3 6 9 12 15 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMHC10H170SFJ Document number: DS37571 Rev. 3 - 2 2.5 VGS=10V, ID=5A 2 1.5 VGS=4.5V, ID=5A 1 0.5 -55℃ 0 3 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature 4 of 9 www.diodes.com January 2016 © Diodes Incorporated DMHC10H170SFJ 0.3 VGS=4.5V, ID=5A 0.2 VGS=10V, ID=5A 0.1 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 2.5 ID=1mA 2 ID=250mA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. JunctionTemperature 10000 CT, JUNCTION CAPACITANCE (pF) VGS=0V IS, SOURCE CURRENT (A) 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.4 15 12 TA=150℃ 9 TA=125℃ TA=85℃ 6 TA=25℃ 3 TA=-55℃ f=1MHz Ciss 1000 100 Coss Crss 0 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 1.5 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 100 RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION ADVANCED INFORMATION 0.5 6 4 VDS=80V, ID=12.8A 2 PW=1ms 1 DC 0 3 6 9 12 15 0.001 Figure 11. Gate Charge DMHC10H170SFJ TJ(Max)=+150℃ TC=+25℃ Single Pulse DUT on 1*MRP board VGS=10V 0.1 Qg, TOTAL GATE CHARGE (nC) Document number: DS37571 Rev. 3 - 2 PW=10s 0.1 0.01 0 PW=100ms 10 5 of 9 www.diodes.com PW=1s PW=100ms PW=10ms 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12.SOA, Safe Operation Area 1000 January 2016 © Diodes Incorporated DMHC10H170SFJ Typical Characteristics - P-CHANNEL 10 VGS=-5.0V 85℃ VGS=-4.5V VGS=-10.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8.0 VGS=-4.0V 6.0 VGS=-3.5V 4.0 VGS=-3.0V 2.0 VGS=-2.5V 8 25℃ 125℃ -55℃ 6 150℃ 4 2 VDS= -5.0V 0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.400 VGS=-4.5V VGS=-10V 0.200 0.100 0.000 0.8 VGS=-4.5V 0.6 150℃ 125℃ 0.5 0.4 0.3 85℃ 0.2 25℃ 0.1 -55℃ 0 0 3 6 9 12 6 7 8 0.4 0.3 ID=-5A 0.2 0.1 15 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 16. Typical Transfer Characteristic ID, DRAIN CURRENT(A) DMHC10H170SFJ 5 0.5 0 Figure 17. Typical On-Resistance vs. Drain Current and Temperature Document number: DS37571 Rev. 3 - 2 4 0.6 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs. Drain Current and Gate Voltage 0.7 3 0.7 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 2 Fig.14 Typical Transfer Characteristic 0.500 0.300 1 Vgs, Gate-Source Voltage (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) ADVANCE INFORMATION ADVANCED INFORMATION 10.0 6 of 9 www.diodes.com 2.4 2.2 VGS=-10V, ID=-5A 2 1.8 1.6 1.4 VGS=-4.5V, ID=-5A 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 18. On-Resistance Variation with Temperature January 2016 © Diodes Incorporated DMHC10H170SFJ VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ONRESISTANCE (W) 0.5 0.4 VGS=-4.5V, ID=-5A 0.3 VGS=-10V, ID=-5A 0.2 0.1 0 -50 2.5 2 ID=-1mA 1.5 ID=-250mA 1 0.5 0 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 19. On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 20. Gate Threshold Variation vs. Junction Temperature 10000 12 TA=150℃ TA=125℃ 9 TA=85℃ 6 f=1MHz CT, JUNCTION CAPACITANCE(pF) VGS=0V IS, SOURCE CURRENT (A) 3 -25 15 TA=25℃ 3 Ciss 1000 100 Coss Crss TA=-55℃ 0 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 1.5 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE(V) Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance 100 10 RDS(ON) Limited 8 PW=1ms 10 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION ADVANCED INFORMATION 0.6 6 4 VDS=-60V, ID=-5A 2 1 DC 0 3 6 9 12 15 Qg, TOTAL GATE CHARGE (nC) 18 0.001 Figure 23. Gate Charge DMHC10H170SFJ Document number: DS37571 Rev. 3- 2 PW=10s 0.1 0.01 0 PW=100ms 7 of 9 www.diodes.com PW=1s TJ(Max)=+150℃ P W=100ms TC=+25℃ Single Pulse PW=10ms DUT on 1*MRP board VGS=-10V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area 1000 January 2016 © Diodes Incorporated r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION DMHC10H170SFJ 1 D=0.9 0.1 D=0.7 D=0.5 D=0.3 0.01 D=0.1 D=0.05 D=0.02 D=0.01 D=0.005 D=Single Pulse RJA(t)=r(t) * RJA RJA=111℃/W Duty Cycle, D=t1 / t2 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 25. Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. V-DFN5045-12 A3 A1 A Seating Plane D D2(4x) k1 E2(4x) k E V-DFN5045-12 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.25 0.35 0.30 D 4.95 5.05 5.00 D2 1.80 2.00 1.90 E 4.45 4.55 4.50 E2 0.90 1.10 1.00 e 0.80 k 0.50 k1 0.50 k2 0.50 L 0.45 0.55 0.50 z 0.35 All Dimensions in mm L k2 z e DMHC10H170SFJ Document number: DS37571 Rev. 3 - 2 b 8 of 9 www.diodes.com January 2016 © Diodes Incorporated DMHC10H170SFJ Suggested Pad Layout ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. V-DFN5045-12 X2 X1(4x) C Dimensions C X X1 X2 Y Y1 Y2 Y3 Y1(4x) Y3 Y2 Y Value (in mm) 0.800 0.400 2.100 4.500 0.700 1.200 2.700 4.800 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMHC10H170SFJ Document number: DS37571 Rev. 3 - 2 9 of 9 www.diodes.com January 2016 © Diodes Incorporated