DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 160mΩ @ VGS = 10V 2.6A 200mΩ @ VGS = 4.5V 2.3A V(BR)DSS Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: TSOT26 making it ideal for high-efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.015 grams (Approximate) UL Flammability Classification Rating 94V-0 Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D TSOT26 D 1 6 D D 2 5 D G 3 4 S G S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN10H170SVT-7 DMN10H170SVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TSOT26 11N Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN10H170SVT Document number: DS37196 Rev. 2 - 2 Mar 3 11N = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: B = 2014) M = Month (ex: 9 = September) YM PRODUCT INFORMATION ADVANCED NEW 100V Features and Benefits 2016 D Apr 4 2017 E May 5 Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D February 2015 © Diodes Incorporated DMN10H170SVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic PRODUCT INFORMATION ADVANCED NEW Symbol Value Units Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V ID 2.6 2.1 A Pulsed Drain Current (10μs pulse, duty cycle ≦1%) IDM 11.2 A Maximum Body Diode Continuous Current (Note 6) IS 2.0 A Symbol Value Units Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Steady State Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case PD RJA Operating and Storage Temperature Range Electrical Characteristics 1.2 1.7 101 73 W °C/W RJC 15 TJ, TSTG -55 to +150 °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 100V, VGS = 0V Gate-Body Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 2.0 3.0 V VDS = VGS, ID = 250µA 115 160 124 200 VSD 0.9 1.0 Input Capacitance Ciss 1,167 Output Capacitance Coss 36 Reverse Transfer Capacitance Crss 25 Gate Resistance Rg 1.3 Total Gate Charge (VGS = 4.5V) Qg 4.9 Total Gate Charge (VGS = 10V) Qg 9.7 Qgs 2.0 Gate-Drain Charge Qgd 2.0 Turn-On Delay Time tD(on) 10 Turn-On Rise Time tr 11 Turn-Off Delay Time tD(off) 42 tf 12 30 35 ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS (ON) mΩ VGS = 10V, ID = 5.0A VGS = 4.5V, ID = 5.0A V VGS = 0V, IS = 10A pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 80V, ID = 12.8A nS VDD = 50V, VGS = 10V, RG = 25Ω, ID = 12.8A nS nC VGS = 0V, IS=12.8A, di/dt=100A/µs DYNAMIC CHARACTERISTICS (Note 8) Gate-Source Charge Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: trr Qrr 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN10H170SVT Document number: DS37196 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN10H170SVT 10 10 VDS = 5.0V VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 7.0V VGS = 8.0V 6 VGS = 9.0V VGS = 6.0V 4 VGS = 5.0V VGS = 4.5V 2 6 TA = 125°C T A = 85°C 4 T A = 25°C VGS = 3.5V VGS = 4.0V TA = 150°C 2 T A = -55°C VGS = 3.0V 0.5 1 1.5 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.2 VGS = 1.8V 0.18 0.16 0.14 VGS = 2.5V 0.12 0.1 VGS = 4.5V 0.08 0.06 0.04 0.02 0 1 2 3 4 5 6 7 8 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 6 0.4 Vgs= 4.5V 0.35 I D = 150°C 0.3 I D = 125°C 0.25 I D = 85°C 0.2 0.15 ID = 25°C 0.1 ID = -55°C 0.05 0 0 10 2.8 2 4 6 8 Id, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain-Source and Temperature 10 0.3 VGS = 10V I D = 10A VGS = 10V 2.4 0.25 ID = 10A 2 VGS = 5V 1.6 I D = 5A 1.2 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( Ω) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) PRODUCT INFORMATION ADVANCED NEW 8 0.2 VGS = 5V I D = 10A 0.15 0.1 0.05 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 5 On-Resistance Variation with Temperature DMN10H170SVT Document number: DS37196 Rev. 2 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated DMN10H170SVT 10 V GS(TH), GATE THRESHOLD VOLTAG E (V) 9 2.5 8 IS, SOURCE CURRENT (A) I D = 250µA 2 1.5 1 0.5 7 6 5 TA = 25 C 4 3 2 1 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 1.2 10 10000 f = 1MHz -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTIO N CAPACITANCE (pF) 9 Ciss 1000 100 Coss Crss 10 8 VDS = 80V I D = 12.8A 7 6 5 4 3 2 1 1 0 10 20 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 0 0 2 4 6 8 Qg , TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 10 100 RDS(on) Limited 10 ID , DRAIN CURRENT (A) PRODUCT INFORMATION ADVANCED NEW 3 1 DC PW = 10s PW = 1s 0.1 PW = 100ms TJ(m ax) = 150°C PW = 10ms PW = 1ms 0.01 TA = 25°C V GS = 10V Single Pulse PW = 100µs DUT on 1 * MRP Board 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN10H170SVT Document number: DS37196 Rev. 2 - 2 1000 4 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN10H170SVT PRODUCT INFORMATION ADVANCED NEW r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja(t) = r(t) * Rthja Rthja = 101°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.001 0.0001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 DMN10H170SVT Document number: DS37196 Rev. 2 - 2 5 of 6 www.diodes.com TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm February 2015 © Diodes Incorporated DMN10H170SVT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PRODUCT INFORMATION ADVANCED NEW C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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