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TN5050H-12WY
50 A 1200 V automotive grade SCR
Datasheet − production data
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Description
Available in TO-247 high power package, the
TN5050H-12WY autograde is suitable in
applications such as automotive / stationary
battery charger, renewable energy generator,
interruptible power supply, solid state relay,
welding equipment and motor drive applications.
Its power switching, voltage robustness and
power dissipation performances are the key
features for functions such as a 80 A AC switch,
an AC phasing inverter and an AC-DC controlled
rectifier bridge.
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Features
The TN5050H-12WY is an automotive grade
product and offers a superior performance in
surge current handling, thermal cooling
capabilities and overvoltage robustness.
Table 1. Device summary
• On-state current: 50 A rms
• Blocking voltage: 1200 V
Symbol
Value
Unit
• High static and dynamic commutation:
– dI/dt = 200 A/µs
– dV/dt = 1000 V/µs
IT(RMS)
50
A
VDRM, V RRM
1200
V
VDSM, V RSM
1300
V
IGT
50
mA
Tj
150
°C
• AEC-Q101
• IGT = 50 mA
• ECOPACK®2 compliant component
Applications
• Automotive:
– on board, off board battery charger
• Solar, wind renewable energy inverters
• Solid state relay
• UPS:
– Bypass
– ICL (inrush current limiter)
– Battery charger
• Industrial welding systems
• Voltage control rectifier
January 2015
This is information on a product in full production.
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www.st.com
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Characteristics
1
TN5050H-12WY
Characteristics
Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated)
Symbol
Parameter
VDRM/VRMM Repetitive off-state voltage (50-60 Hz)
IT(RMS)
IT(AV)
IT(RMS)
IT(AV)
ITSM(1)
Tj = 150 °C
On-state rms current (180° conduction angle)
Unit
1200
V
50
Average on-state current (180° conduction angle)
Tc = 137 °C
A
32
80
On-state rms current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current (Tj initial = 25 °C)
Tc = 125 °C
A
51
tp = 8.3 ms
633
tp = 10 ms
580
200
A/µs
A
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 50 Hz
Tj = 150 °C
IGM
Forward peak gate current
Tj = 150 °C
tp = 20 µs
8
A
Tj = 150 °C
1
W
Storage junction temperature range
- 40 to + 150
°C
Operating junction temperature range
- 40 to + 150
°C
PG(AV)
Tstg
Tj
Average gate power dissipation
1. ST recommends I²t value for fusing = 1680 A²s for Tj = 25 °C and Tp = 10 ms.
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Value
DocID026846 Rev 1
TN5050H-12WY
Characteristics
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
IGT
VD = 12 V, RL = 33 Ω
VGT
VD = 12 V, RL = 33 Ω
VGD
VD = 2/3 X VDRM, RL = 3.3 k Ω
Value
Unit
Min.
10
Max.
50
Max.
1
V
Min.
0.15
V
mA
Tj = 150 °C
IH
IT = 500 mA, gate open
Max.
100
mA
IL
IG = 1.2 X IGT
Max.
125
mA
tgt
IT = 50 A, VD = VDRM, IG = 200 mA, dlG/dt = 0.2 A/µs
Typ
3
µs
dV/dt
tq
VD = 2/3 X VDRM, gate open
Tj = 150 °C
Min.
1000
V/µs
IT = 33 A, VD = 800 V, VR = 75 V, tP = 100 µs, dlT/dt = 10 A/µs,
dVD/dt = 20 V/µs
Tj = 150 °C
Typ
150
µs
Max.
1.55
V
VTM
ITM = 100 A, tP = 380 µs
VTO
Threshold voltage
Tj = 150 °C
Max.
0.88
V
RD
Dynamic resistance
Tj = 150 °C
Max.
6
mΩ
Tj = 25 °C
Max.
5
µA
Tj = 125 °C
Max.
3
mA
Tj = 150 °C
Max.
7.5
mA
Tj = 25 °C
Max.
10
µA
IDRM/IRRM
IDSM/IRSM
VD = VDRM, VR = VRRM
VD = VDSM, VR = VRSM
Table 4. Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
3:
0.3
°C/W
50
°C/W
Figure 2. Correlation between maximum
average power dissipation and maximum
allowable temperatures (Tamb and Tcase)
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TO-247
Figure 1. Maximum average power dissipation
versus average on-state current
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Value
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Characteristics
TN5050H-12WY
Figure 3. Average and D.C. on-state current
versus case temperature
Figure 4. Average and D.C. on-state current
versus ambient temperature
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Figure 5. Relative variation of thermal
impedance junction to case and junction to
ambient versus pulse duration
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Figure 6. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
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Figure 7. Relative variation of holding and
latching current versus junction temperature
(typical values)
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Figure 8. Surge peak on-state current versus
number of cycles
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TN5050H-12WY
Characteristics
Figure 9. Non repetitive surge peak on-state
current for a sinusoidal pulse (tp < 10 ms)
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Figure 10. On-state characteristics
(maximum values)
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Figure 11. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
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Package information
2
TN5050H-12WY
Package information
•
Epoxy meets UL94, V0
•
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 12. TO-247 dimension definitions
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TN5050H-12WY
Package information
Table 5. TO-247 dimension values
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ
Max.
A
4.85
5.15
0.191
0.203
A1
2.20
2.60
0.086
0.102
b
1.00
1.40
0.039
0.055
b1
2.00
2.40
0.078
0.094
b2
3.00
3.40
0.118
0.133
c
0.40
0.80
0.015
0.031
D(1)
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.30
5.60
0.209
L
14.20
14.80
0.559
0.582
L1
3.70
4.30
0.145
0.169
L2
5.45
18.50 typ.
0.215
0.220
0.728 typ.
∅P(2)
3.55
3.65
0.139
0.143
∅R
4.50
5.50
0.177
0.217
S
5.30
5.70
0.209
5.50
0.216
0.224
1. Dimension D plus gate protrusion does not exceed 20.5 mm
2. Resin thickness around the mounting hole is not less than 0.9 mm
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Ordering information
3
TN5050H-12WY
Ordering information
Table 6. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
TN5050H-12WY
TN5050H12Y
TO-247
4.43 g
30
Tube
Revision history
Table 7. Document revision history
8/9
Date
Revision
07-Jan-2015
1
Changes
Initial release.
DocID026846 Rev 1
TN5050H-12WY
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