STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC® package STAC244F Air cavity Description The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. Figure 1. Pin connection 1 1 The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®. 2 2 3 1. Drain 2. Gate 3. Source (Bottom side) Table 1. Device summary Order code Marking Package Packaging STAC4932F STAC4932F STAC244F Plastic tray September 2010 Doc ID 17158 Rev 3 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STAC4932F Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 17158 Rev 3 STAC4932F Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25°C) Symbol V(BR)DSS(1) VDGR VGS TJ TSTG Parameter Value Unit Drain source voltage 200 V Drain-gate voltage (RGS = 1 MΩ) 200 V Gate-source voltage ±20 V Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.075 °C/W Storage temperature 1. TJ = 150 °C 1.2 Thermal data Table 3. Symbol RthJC Thermal data (1 msec - 10%) Parameter Junction - case thermal resistance Doc ID 17158 Rev 3 3/12 Electrical characteristics 2 STAC4932F Electrical characteristics TCASE = +25 °C 2.1 Static Table 4. Static (per side) Symbol V(BR)DSS(1) VGS = 0 V Test conditions Min. Typ. IDS = 100 mA 200 250 IDSS VGS = 0 V VDS = 100 V IGSS VGS = 20 V VDS = 0 V VTH ID = 250 mA VDS(ON) VGS = 10 V ID = 10 A GFS VDS = 10 V ID = 2.5 A CISS VGS = 0 V VDS = 100 V COSS VGS = 0 V CRSS VGS = 0 V 2.0 Max. Unit V 1 mA 250 nA 4.0 V 3.6 V 6 S f = 1 MHz 570 pF VDS = 100 V f = 1 MHz 134 pF VDS = 100 V f = 1 MHz 8 pF 1. TJ = 150 °C 2.2 Dynamic Table 5. Symbol POUT 4/12 Pulse / 1 mec - 10 % Test conditions VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz Min. Typ. Max. Unit 1000 1200 - W hD VDD = 100 V, IDQ = 2 x 250 mA, POUT = 1000 W, f = 123 MHz 60 - % Gain VDD = 100 V, IDQ = 2 x 250 mA, POUT = 1000 W, f = 123 MHz 26 - dB Doc ID 17158 Rev 3 STAC4932F 3 Note: Impedance Impedance Figure 2. Current conventions Table 6. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 123 MHz (Pulse) TBD TBD Measured gate to gate and drain to drain, respectively. Doc ID 17158 Rev 3 5/12 Typical performances 4 STAC4932F Typical performances Figure 3. Maximum safe operating area P 0D['UDLQ&XUUHQW ,G$ U Q F [4 FD KVG NKO QP TCVK OU G 1R OU &% 6LQJOH3XOVH 7FDVH &7M & 'UDLQVXSSO\YROWDJH 9GG9 Figure 4. !-V Transient thermal impedance 6LQJOH5HSHWLWLYHSXOVH 7KHUPDO,PSHGDQFH=WKMF&: #/X VLQJOHSXOVH ( ( ( ( 5HFWDQJXODU3RZHU3XOVH:LGWKVHF 6/12 Doc ID 17158 Rev 3 ( STAC4932F Typical performances Figure 5. Transient thermal model 2 2 2 /HM # # # & 2 2 2 /HM # # # & 2 2 2 /HM # # # & 2 2 2 /HM # # # & !-V Figure 6. Power gain vs. output power 30 28 Power Gain (dB) 26 24 22 20 Freq = 123 MHz 18 Idq = 2x 100mA 16 Pulse width = 1msec 14 Duty cycle = 10% 100V 90V 12 0 100 200 300 400 500 600 700 800 Output Power (watts) Doc ID 17158 Rev 3 900 1000 1100 1200 1300 AM06084v1 7/12 Typical performances Figure 7. STAC4932F Efficiency vs. output power 80 Freq = 123 MHz 70 Idq = 2x 100mA Efficiency (%) 60 Pulse width = 1msec 50 Duty cycle = 10% 40 30 20 100V 90V 10 0 0 100 200 300 400 500 600 700 800 Output Power (watts) 8/12 Doc ID 17158 Rev 3 900 1000 1100 1200 1300 AM06085v1 STAC4932F 5 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 7. STAC244F package dimensions mm. Inch Dim. Min Max Min Max A 5.10 5.59 200 220 A1 4.32 4.83 170 190 B 4.32 5.33 170 210 C 9.65 9.91 380 390 D 19.61 20.02 772 788 E 20.45 20.70 805 815 F 0.08 1.15 0.003 0.006 G 0.89 1.14 0.035 0.045 H 1.45 1.70 0.057 0.067 I 3.18 4.32 0.125 0.170 J 9.27 9.53 0.365 0.375 Doc ID 17158 Rev 3 9/12 Package mechanical data Figure 8. STAC4932F Package dimensions !-V 10/12 Doc ID 17158 Rev 3 STAC4932F 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 22-Feb-2010 1 First release. 03-Aug-2010 2 Updated description on cover page and Table 3. 02-Sep-2010 3 Updated Figure 8. Added Figure 3, 4 and 5. Doc ID 17158 Rev 3 11/12 STAC4932F Please Read Carefully: Information in this document is provided solely in connection with ST products. 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