High voltage sensitive SCR: TS110 in circuit breaker This SCR enables design of rugged circuit breaker with low power consumption Thanks to highly sensitive triggering levels (IGT=100 µA), the TS110 SCR Thyristor series are suitable for circuit breaker applications when logic level is required. The 1250 V direct surge voltage capability of the TS110 series enables high robustness of the whole circuit breaker. The low leakage current of the TS110 series reduces power consumption over the entire lifetime of the circuit breaker. The TS110 series are available in a through-hole TO-92 package with different pin-outs and in a SMBflat-3L package. KEY FEATURES • On-state RMS current: 1.25 A TARGETED APPLICATIONS • Repetitive peak off-state voltage: • Ground fault circuit interrupter (GFCI) 700 and 800 V • Non-repetitive direct surge peak off-state voltage: 1250 V • Non-repetitive reverse surge peak off-state voltage: 900 V • Triggering gate current: 100 μA • High off-state immunity up to 200 V/μs • ECOPACK®2 compliant component • Arc fault circuit interrupter (AFCI) • Residual current device (RCD) • Residual current circuit breaker with overload protection (RCBO) • Arc fault detection device (AFDD) • Home automation switcher KEY BENEFITS • New standard compliance with no breaker tripping (TS110-8) • Increased breaker robustness • Surge voltage immunity up to 5 kV • EFT transient burst compliance up to 4 kV • Higher quality & faster assembly • Low power consumption • Low profile SMD package www.st.com SURGE VOLTAGE IMMUNITY The TS110 is self-protected against over-voltage. Above its break-over voltage, VBO, the TS110 self-triggers safely. It recovers its blocking voltage capability after the surge removal. Therefore, the circuit is Class A below 5 kV surge and becomes Class B (no damage) over 5 KV. IEC 61000-4-5 test circuit (Representative application schematic) R1 Vpp > 5 kV Vpeak = VBO R2 1.2/50 µs voltage surge IT O V CIN VT 50 µs Ipeak = 25 A Surge voltage 1.2/50 µs I O dI/dt = 100 A/µs TS110 SERIES PRODUCT TABLE Part number Package Triggering gate current (IGT) Repetitive peak off-state voltage (VDRM max and VRRM) (@ Tj ) Junction temperature (Tj) Direct surge voltage capability (VDSm) Max leakage current (IDRM and IRRM) (@Tj and VDRM, VRRM) Critical rate of rise of on-state current (dI/dt) max (@Tj = 25 °C), Gate open, VD = VBO, tr ≤ 100 ns) Critical rate of rise of off-state voltage (dV/dt) (@ Tj max) max (µA) max (V) max (°C) max (V) max (µA) max (A/µs) min (V/µs) 700 V TS110-7A1 TO-92* GAK pinout 100 700 125 1250 100 100 15 TS110-7UF SMBflat-3L 100 700 125 1250 100 100 15 800 V TS110-8A1 TS110-8A2 TS110-8UF TO-92* GAK pinout TO-92* KGA pinout SMBflat-3L 100 800 125 1250 100 200 200 100 800 125 1250 100 200 200 100 800 125 1250 100 200 200 * Ammopack is available on request © STMicroelectronics - May 2015 - Printed in United Kingdom - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies All other names are the property of their respective owners Order code: FLTS1100515 For more information on ST products and solutions, visit www.st.com