flts1100515 lr

High voltage
sensitive SCR:
TS110 in circuit breaker
This SCR enables design of rugged circuit breaker with low power
consumption
Thanks to highly sensitive
triggering levels (IGT=100 µA),
the TS110 SCR Thyristor series
are suitable for circuit breaker
applications when logic level is
required.
The 1250 V direct surge voltage
capability of the TS110 series
enables high robustness of the
whole circuit breaker.
The low leakage current of the
TS110 series reduces power
consumption over the entire
lifetime of the circuit breaker.
The TS110 series are available in
a through-hole TO-92 package
with different pin-outs and in a
SMBflat-3L package.
KEY FEATURES
• On-state RMS current: 1.25 A
TARGETED APPLICATIONS
• Repetitive peak off-state voltage: • Ground fault circuit interrupter (GFCI)
700 and 800 V
• Non-repetitive direct surge peak off-state
voltage: 1250 V
• Non-repetitive reverse surge peak off-state
voltage: 900 V
• Triggering gate current: 100 μA
• High off-state immunity up to 200 V/μs
• ECOPACK®2 compliant component
• Arc fault circuit interrupter (AFCI)
• Residual current device (RCD)
• Residual current circuit breaker with
overload protection (RCBO)
• Arc fault detection device (AFDD)
• Home automation switcher
KEY BENEFITS
• New standard compliance with no breaker
tripping (TS110-8)
• Increased breaker robustness
• Surge voltage immunity up to 5 kV
• EFT transient burst compliance up to 4 kV
• Higher quality & faster assembly
• Low power consumption
• Low profile SMD package
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SURGE VOLTAGE IMMUNITY
The TS110 is self-protected against over-voltage. Above its break-over voltage, VBO, the TS110 self-triggers safely.
It recovers its blocking voltage capability after the surge removal.
Therefore, the circuit is Class A below 5 kV surge and becomes Class B (no damage) over 5 KV.
IEC 61000-4-5 test circuit
(Representative application schematic)
R1
Vpp > 5 kV
Vpeak = VBO
R2
1.2/50 µs voltage surge
IT
O
V
CIN
VT
50 µs
Ipeak = 25 A
Surge voltage
1.2/50 µs
I
O
dI/dt = 100 A/µs
TS110 SERIES PRODUCT TABLE
Part number
Package
Triggering
gate current
(IGT)
Repetitive peak
off-state voltage
(VDRM max and
VRRM) (@ Tj )
Junction
temperature
(Tj)
Direct surge
voltage
capability
(VDSm)
Max leakage
current
(IDRM and IRRM)
(@Tj and VDRM,
VRRM)
Critical rate of rise
of on-state current
(dI/dt) max (@Tj =
25 °C), Gate open, VD
= VBO, tr ≤ 100 ns)
Critical rate of
rise of off-state
voltage (dV/dt)
(@ Tj max)
max (µA)
max (V)
max (°C)
max (V)
max (µA)
max (A/µs)
min (V/µs)
700 V
TS110-7A1
TO-92*
GAK pinout
100
700
125
1250
100
100
15
TS110-7UF
SMBflat-3L
100
700
125
1250
100
100
15
800 V
TS110-8A1
TS110-8A2
TS110-8UF
TO-92*
GAK pinout
TO-92*
KGA pinout
SMBflat-3L
100
800
125
1250
100
200
200
100
800
125
1250
100
200
200
100
800
125
1250
100
200
200
* Ammopack is available on request
© STMicroelectronics - May 2015 - Printed in United Kingdom - All rights reserved
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All other names are the property of their respective owners
Order code: FLTS1100515
For more information on ST products and solutions, visit www.st.com