Single P-channel MOSFET ELM17401FA-S ■General description ■Features ELM17401FA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=-30V Id=-1.2A (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-10V) Rds(on) < 200mΩ (Vgs=-4.5V) Rds(on) < 280mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V Symbol Vds Vgs Ta=25°C Continuous drain current -1.2 Id Ta=70°C Pulsed drain current -1.0 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg -10 0.35 0.22 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 300 350 280 360 425 320 °C/W °C/W °C/W 1 2 1 3 ■Circuit SC-70(TOP VIEW) 3 Note D Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4-1 Single P-channel MOSFET ELM17401FA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Rds(on) -0.6 -10 Vgs=-10V Id=-1.2A Ta=125°C Vgs=-4.5V, Id=-1.2A Vgs=-2.5V, Id=-1A Gfs Vds=-5V, Id=-1.2A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=-1A, Vgs=0V Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg V -1 -5 μA ±100 nA -1.0 -1.4 V A 122 150 173 147 207 220 200 280 Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Forward transconductance 3.0 4.5 -0.85 mΩ S -1.00 -0.5 V A 409 pF 55 42 12 pF pF Ω 5.06 0.72 nC nC 1.58 6.2 nC ns Vgs=-10V, Vds=-15V 3.2 ns td(off) RL=15Ω, Rgen=3Ω tf trr If=-1A, dIf/dt=100A/μs 41.2 14.5 13.2 ns ns ns 5.4 nC Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -30 Qrr Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-1A If=-1A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM17401FA-S ■Typical electrical and thermal characteristics 10 10 -5V -4V Vgs=-3.5V -10V 8 25°C Vds=-5V 8 6 -Id (A) -Id (A) -3V -2.5V 4 2 6 125°C 4 2 -2.0V 0 0 0 1 2 3 4 5 0 0.5 300 2 2.5 3 3.5 4 1.8 250 Normalized On-Resistance Rds(on) (m� ) 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-2.5V 200 Vgs=-4.5V 150 Vgs=-10V 100 0 1 2 3 4 1.6 Vgs=-10V Vgs=-4.5V 1.4 Vgs=-2.5V 1.2 1 Id=-1A 0.8 5 6 0 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 350 1.0E+01 Id=-1A 300 1.0E+00 1.0E-01 250 125°C -Is (A) Rds(on) (m� ) 1 200 150 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 100 1.0E-05 1.0E-06 50 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.4 Single P-channel MOSFET ELM17401FA-S 5 500 Capacitance (pF) 4 -Vgs (Volts) 600 Vds=-15V Id=-1A 3 2 1 Ciss 400 300 200 Coss 0 0 1 2 3 4 0 5 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 100�s Power (W) 10ms 25 30 Tj(max)=150°C Ta=25°C 8 6 4 1s 10s 2 DC 0 0.001 0.01 1 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=360°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 20 10 10�s 1ms 0.1s 10 15 12 1.00 0.1 10 14 Rds(on) limited 0.10 5 -Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150°C Ta=25°C 10.00 -Id (Amps) Crss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000