GK001T Ordering number : ENN7781 GK001T N-Channel GTBT Switching Regulator Applications Features • • • • • • Adoption of process GTBT (Grounded-Trench-MOS assisted Bipolar-mode Field Effect Transistor). High breakdown voltage and high reliablity. High speed switching. Wide ASO. Low saturation voltage, low On resistance : RCE(sat)=280mΩ (at 1A). High hFE (typ : 1000). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 600 V Collector-to-Emitter Voltage VCES 600 V Emitter-to-Base Voltage VEBO 7 V IC 2 A 4 A Collector Current Collector Current (Pulse) ICP IB Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤300µs, Duty cycle≤10% Tc=25°C 1 A 0.8 W 22 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max ICBO ICES VCB=500V, IE=0 10 µA Collector Cutoff Current VCE=500V, RBE=0 10 µA Emitter Cutoff Current IEBO VEB=6V, IC=0 10 µA hFE1 VCE=5V, IC=50mA 500 hFE2 hFE3 VCE=5V, IC=400mA VCE=5V, IC=1.2A 12 Cob VCB=10V, f=1MHz 7.2 IC=1A, IB=0.2A IC=1A, IB=0.2A 280 560 mV 1.1 1.5 V Collector Cutoff Current DC Current Gain Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) 1500 35 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33004 TS IM TB-00000049 No.7781-1/4 GK001T Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 600 Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0 600 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 200 V Turn-ON Time ton tstg tf Storage Time Fall Time IC=1A, IB1=0.1A, IB2=--0.45A, RL=200Ω 200 ns IC=1A, IB1=0.1A, IB2=--0.45A, RL=200Ω 700 ns IC=1A, IB1=0.1A, IB2=--0.45A, RL=200Ω 70 ns Package Dimensions unit : mm 2045B Package Dimensions unit : mm 2044B 6.5 5.0 4 2.3 0.5 0.85 0.7 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.5 2 0.8 0.5 1 1 0.6 7.5 0.8 1.6 0.6 0.5 0.85 1.2 1.2 7.0 5.5 5.5 7.0 0.5 1.5 2.3 1.5 6.5 5.0 4 V 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1.2 0 to 0.2 2.3 2.3 SANYO : TP-FA 2.3 SANYO : TP 2.3 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% RB RL + + 50Ω 100µF 470µF VBE= --5V IC -- VCE 1.8 200mA VCE=5V 1.6 120mA 100mA 80mA 60mA 300mA 1.4 1.2 IC -- VBE 2.0 180mA 160mA 140mA 1.0 40mA 0.8 20mA 0.6 10mA 5mA 0.4 Collector Current, IC -- A 250mA 2.0 Collector Current, IC -- A VCC=200V 1.5 1.0 --40° C VR Ta= 25° 120°C C INPUT OUTPUT IB2 0.5 0.2 IB=0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, VCE -- V 4.5 5.0 IT07034 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 IT07035 No.7781-2/4 GK001T hFE -- IC VCE=5V 1000 7 5 3 2 °C 120°C 25°C 100 7 5 3 2 10 7 5 3 2 1.0 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Output Capacitance, Cob -- pF Base-to-Emitter Saturation Voltage, VBE(sat) -- V 0°C 12 7 Ta= 5°C 5 C 0° --4 2 3 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT07037 Cob -- VCB f=1MHz 5 3 2 1.0 Ta= --40°C 7 5 25°C 120°C 3 2 3 2 10 7 5 3 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1.0 0.1 5 0µs op 50 1m 0µs 10 s ms era tio n 10 3 0m 2 s 0.1 7 5 3 2 3 5 7 10 2 3 5 7 100 IT07039 3 2 1.0 7 5 3 Tc=25°C IB2= --0.4A L=500µH, Single pulse 2 Tc=25°C Single pulse 0.01 1.0 2 Reverse Bias ASO 7 =10 PT DC 1.0 7 5 2 5 7 1.0 5 IC=2A 2 3 Collector-to-Base Voltage, VCB -- V ICP=4A 3 2 IT07038 Forward Bias ASO 7 5 Collector Current, IC -- A 0.1 7 5 0.1 0.001 2 3 0.1 3 5 7 10 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE -- V 3 2 10 3 5 7 2 100 3 5 Collector-to-Emitter Voltage, VCE -- V IT07040 PC -- Ta 0.9 7 1000 IT07041 PC -- Tc 25 0.8 22 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 2 100 IC / IB=5 7 3 Collector Current, IC -- A VBE(sat) -- IC 10 5 0.01 0.001 5 7 1.0 2 3 IT07036 Collector Current, IC -- A IC / IB=5 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta= --4 0 VCE(sat) -- IC 1.0 Collector Current, IC -- A DC Current Gain, hFE 10000 7 5 3 2 0.7 0.6 0.5 0.4 0.3 0.2 20 15 10 5 0.1 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07042 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07043 No.7781-3/4 GK001T Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7781-4/4