BSS123N3

CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 1/8
N-CHANNEL MOSFET
BVDSS
100V
BSS123N3
ID@VGS=10V
VGS=10V, ID=700mA
1.7A
290mΩ
VGS=4V, ID=400mA
310mΩ
VGS=10V, ID=170mA
260mΩ
VGS=4V, ID=170mA
280mΩ
RDSON(TYP)
Description
The BSS123N3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive(2.5V)
• Easily designed drive circuits
• Pb-free lead plating and halogen-free package
Symbol
Outline
BSS123N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
BSS123N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS123N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V
Pulsed Drain Current
Total Power Dissipation
Channel Temperature
Junction and Storage Temperature Range
Symbol
VDSS
Limits
100
±20
1.7
6.8
1.38
+150
-55~+150
VGSS
ID
IDP
PD
TCH
Tj ; Tstg
*1
*2
Unit
V
V
A
A
W
C
C
Note : *1. Pulse Width  300μs, Duty cycle 2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Limit
90
Unit
C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 350C/W when mounted on minimum copper pad.
Electrical Characteristics (Ta=25C)
Symbol
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
BSS123N3
Min.
Typ.
Max.
Unit
100
1
0.08
290
310
260
280
1
2.5
±100
1
400
450
400
400
-
V
V
nA
μA
-
512
15
11
3.1
1.2
9.7
1.4
3.6
1.8
0.6
-
Test Conditions
S
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=100V, VGS=0
ID=700mA, VGS=10V
ID=400mA, VGS=4V
ID=170mA, VGS=10V
ID=170mA, VGS=4V
VDS=10V, ID=170mA
pF
VDS=25V, VGS=0, f=1MHz
ns
VDD=30V, ID=1.7A, VGS=10V, RGEN=6Ω
nC
VDD=30V, ID=1.7A, VGS=10V
m
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
*IS
*ISM
*VSD
-
-
1.7
6.8
1.2
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 3/8
A
V
VGS=0V, ISD=1A
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
BSS123N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 4/8
Typical Characteristics
Typical Output Characteristics
Breakdown Voltage vs Junction Temperature
140
8
10V
8V
7V
6V
4.5V
4V
3.5V
Drain Current - ID(A)
6
5
4
ID=250μA
Breakdown Voltage -BVDSS(V)
7
3
VGS=3V
2
1
130
120
110
100
0
0
1
2
3
4
Drain-Source Voltage -VDS(V)
5
-60 -40 -20
6
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1000
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(on)(mΩ)
10000
VGS=3V
VGS=4.5V
VGS=10V
VGS=2.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0.001
0.01
0.1
Drain Current-ID(A)
0
1
900
Static Drain-Source On-State
Resistance-RDS(ON)(mΩ)
Static Drain-Source On-State
Resistance-RDS(ON)(mΩ)
1000
800
700
600
500
400
ID=700mA
300
200
ID=400mA
100
0
0
2
4
6
8
Gate-Source Voltage-VGS(V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Reverse Drain Current -IDR(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
BSS123N3
0 20 40 60 80 100 120 140 160
Junction Temperature-Tj(°C)
10
700
650
600
550
500
450
400
350
300
250
200
150
100
VGS=10V, ID=700mA
VGS=4V, ID=400mA
VGS=10V, ID=170mA
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 5/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2.4
Threshold Voltage-VGS(th)(V)
Capacitance---(pF)
1000
Ciss
100
Coss
Crss
2.2
ID=250uA
2
1.8
1.6
1.4
1.2
1
10
0
5
10
15
20
25
Drain-Source Voltage -VDS(V)
30
-60 -40 -20
35
8
7
VDS=30V
10
Drain Current -ID(A)
Gate-Source Voltage---VGS(V)
60 80 100 120 140 160
Typical Transfer Characteristics
12
VDS=50V
8
VDS=70V
6
4
2
ID=1.7A
6
5
4
3
2
VDS=5V
1
0
0
0
1
2
3
4
5
0
Total Gate Charge---Qg(nC)
10
100μs
Power Dissipation---PD(W)
1.40
1ms
1
10ms
Ta=25°C, Single pulse,
mounted on a 1 in² FR-4
boad with 2 oz. copper.
RθJA=90°C/W
15
1.60
RDS(ON) limited
0.1
5
10
Gate-Source Voltage-VGS(V)
Power Derating Curve
Maximum Safe Operating Area
Drain Current --- ID(A)
20 40
Junction Temperature-Tj(°C)
Gate Charge Characteristics
100ms
mounted on a 1 in² FR
board with 2 oz. copper
1.20
1.00
0.80
0.60
0.40
0.20
DC
0.00
0.01
0.1
BSS123N3
0
1
10
100
Drain-Source Voltage -VDS(V)
1000
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BSS123N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BSS123N3
CYStek Product Specification
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date : 2014.08.21
Page No. : 8/8
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
3
B
Device
Code
S
SA
□□
L
2
1
Date Code
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
J
Style : Pin 1.Gate 2.Source 3.Drain
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0004 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.01
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0035 0.0071
0.0276 REF
0.0374*
0.0830 0.1161
0.0098 0.0256
Millimeters
Min.
Max.
0.09
0.18
0.70 REF
0.95*
2.10
2.95
0.25
0.65
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
 Lead : Pure tin plated.
 Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BSS123N3
CYStek Product Specification