VS-SD200N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V • High surge current capabilities • Stud cathode and stud anode version • Standard JEDEC® types • Compression bonded encapsulations • Designed and qualified for industrial level DO-205AC (DO-30) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY • Converters IF(AV) 200 A Package DO-205AC (DO-30) Circuit configuration Single diode • Power supplies • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) VS-SD200N/R TEST CONDITIONS 1600 to 2000 I2t VRRM UNITS 200 A TC 110 °C 50 Hz 4700 60 Hz 4920 50 Hz 110 60 Hz 101 IF(RMS) IFSM 2400 314 Range TJ A kA2s 1600 to 2000 2400 V -40 to 180 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD200N/R VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 20 2000 2100 24 2400 2500 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 Revision: 25-Nov-13 Document Number: 93541 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD200N/R Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current at case temperature Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current IF(AV) IF(RMS) IFSM 180° conduction, half sine wave Maximum for fusing I2t 220 A 100 °C 4700 t = 10 ms t = 8.3 ms t = 10 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 4920 4140 110 101 kA2s 78 71 t = 0.1 to 10 ms, no voltage reapplied 1100 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.90 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.00 Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.79 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.64 VFM Ipk = 630 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.40 Maximum forward voltage drop A 3950 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms I2t °C t = 10 ms t = 10 ms I2t A 110 314 t = 8.3 ms Maximum I2t for fusing 200 DC at 95 °C case temperature t = 8.3 ms UNITS kA2s V m V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range SYMBOL TEST CONDITIONS TJ SD200N/R 1600 to 2000 2400 -40 to 180 -40 to 150 Maximum storage temperature range TStg Maximum thermal resistance, junction to case RthJC DC operation 0.23 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 Maximum allowed mounting torque ± 10 % °C - 55 to 200 K/W Not-lubricated threads Approximate weight Case style UNITS See dimensions (link at the end of datasheet) 14 Nm 120 g DO-205AC (DO-30) Revision: 25-Nov-13 Document Number: 93541 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD200N/R Series www.vishay.com Vishay Semiconductors RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS 180° 0.041 0.030 120° 0.049 0.051 90° 0.063 0.068 60° 0.093 0.096 30° 0.156 0.157 UNITS TJ = TJ maximum K/W 180 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC SD200N/R Series R thJC(DC) = 0.23 K/W 170 160 150 Conduction Angle 140 130 120 110 30° 60° 90° 120° 180° 100 0 40 80 120 160 200 240 Average Forward Current (A) 180 160 150 Conduction Period 140 130 120 110 90° 60° 100 120° 30° 180° DC 90 0 50 100 150 200 250 300 350 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 300 3 K/ W /W 8K K/ W -Δ 0.6 K/ 0.8 150 Conduction Angle R W RMS Limit 0.0 4 = 200 0. 0. A hS 250 Rt W K/ 12 0. /W K 2 180° 120° 90° 60° 30° 0. Maximum Average Forward Power Loss (W) SD200N/R Series R thJC (DC) = 0.23 K/W 170 K/W 1.4 K 100 /W SD200N/R Series Tj = Tj max 50 1.8 K /W 0 0 50 100 150 200 Average Forward Current (A) 250 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Revision: 25-Nov-13 Document Number: 93541 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD200N/R Series Vishay Semiconductors 400 DC 180° 120° 90° 60° 30° 350 300 0. 2 0. SD200N/R Series Tj = Tj max 1.8 K/W RMS Limit 100 50 R Conduction Period K/ 0.6 W K/W 0.8 K/W 1.4 K /W 200 150 W W ta el 0.4 K/ K/ -D 3 W 250 K/ 08 0. = A W hS K/ Rt 12 0. Maximum Average Forward Power Loss (W) www.vishay.com 0 0 50 100 150 200 250 300 350 40 Average Forward Current (A) 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 4500 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4000 3500 3000 2500 2000 1500 SD200N/R Series 1000 1 10 100 5000 4500 4000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj max. No Voltage Reapplied Rated Vrrm Reapplied 3500 3000 2500 2000 1500 SD200N/R Series 1000 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10 000 SD200N/R Series 1000 Tj = 25 °C Tj = Tj max. 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 25-Nov-13 Document Number: 93541 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD200N/R Series Transient Thermal Impedance Z thJC (K/W) www.vishay.com Vishay Semiconductors 1 Steady State Value: R thJC = 0.23 K/W (DC Operation) 0.1 SD200N/R Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic ORDERING INFORMATION TABLE Device code VS- SD 20 0 N 24 P C 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = Standard recovery 5 - N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A M = Stud base DO-205AC (DO-30) M12 x 1.75 8 - C = Ceramic housing For metric device M12 x 1.75 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95302 Revision: 25-Nov-13 Document Number: 93541 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-205AC (DO-30) DIMENSIONS in millimeters (inches) 16.5 (0.65) MAX. Ceramic housing 2.6 (0.10) MAX. 35 (1.38) MAX. 6.5 (0.26) MIN. DIA. 8.5 (0.33) NOM. C.S. 16 mm2 (0.015 s.i.) 157 (6.18) 170 (6.69) DIA. 22.5 (0.88) MAX. 55 (2.16) MIN. SW 27 12.5 (0.49) MAX. 21 (0.82) MAX. 1/2"-20UNF-2A* *For metric device: M12 x 1.75 contact factory Document Number: 95302 Revision: 11-Apr-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000