VS-SD200N/R Series Datasheet

VS-SD200N/R Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 200 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Compression bonded encapsulations
• Designed and qualified for industrial level
DO-205AC (DO-30)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
• Converters
IF(AV)
200 A
Package
DO-205AC (DO-30)
Circuit configuration
Single diode
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
VS-SD200N/R
TEST CONDITIONS
1600 to 2000
I2t
VRRM
UNITS
200
A
TC
110
°C
50 Hz
4700
60 Hz
4920
50 Hz
110
60 Hz
101
IF(RMS)
IFSM
2400
314
Range
TJ
A
kA2s
1600 to 2000
2400
V
-40 to 180
150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD200N/R
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
20
2000
2100
24
2400
2500
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
Revision: 25-Nov-13
Document Number: 93541
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VS-SD200N/R Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current 
at case temperature
Maximum average forward current 
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
IF(AV)
IF(RMS)
IFSM
180° conduction, half sine wave
Maximum
for fusing
I2t
220
A
100
°C
4700
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
4920
4140
110
101
kA2s
78
71
t = 0.1 to 10 ms, no voltage reapplied
1100
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)),
TJ = TJ maximum
0.90
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
1.00
Low level value of forward slope resistance
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)),
TJ = TJ maximum
0.79
High level value of forward slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
0.64
VFM
Ipk = 630 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.40
Maximum forward voltage drop
A
3950
Sinusoidal half wave,
initial 
TJ = TJ maximum
100 % VRRM
reapplied
t = 8.3 ms
I2t
°C
t = 10 ms
t = 10 ms
I2t
A
110
314
t = 8.3 ms
Maximum I2t for fusing
200
DC at 95 °C case temperature
t = 8.3 ms
UNITS
kA2s
V
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
SYMBOL
TEST CONDITIONS
TJ
SD200N/R
1600 to 2000
2400
-40 to 180
-40 to 150
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.23
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
Maximum allowed 
mounting torque ± 10 %
°C
- 55 to 200
K/W
Not-lubricated threads
Approximate weight
Case style
UNITS
See dimensions (link at the end of datasheet)
14
Nm
120
g
DO-205AC (DO-30)
Revision: 25-Nov-13
Document Number: 93541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD200N/R Series
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RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS
180°
0.041
0.030
120°
0.049
0.051
90°
0.063
0.068
60°
0.093
0.096
30°
0.156
0.157
UNITS
TJ = TJ maximum
K/W
180
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC


SD200N/R Series
R thJC(DC) = 0.23 K/W
170
160
150
Conduction Angle
140
130
120
110
30°
60° 90° 120°
180°
100
0
40
80
120
160
200
240
Average Forward Current (A)
180
160
150
Conduction Period
140
130
120
110
90°
60°
100
120°
30°
180°
DC
90
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
300
3
K/
W
/W
8K
K/
W
-Δ
0.6
K/
0.8
150
Conduction Angle
R
W
RMS Limit
0.0
4
=
200
0.
0.
A
hS
250
Rt
W
K/
12
0. /W
K
2
180°
120°
90°
60°
30°
0.
Maximum Average Forward Power Loss (W)
SD200N/R Series
R thJC (DC) = 0.23 K/W
170
K/W
1.4 K
100
/W
SD200N/R Series
Tj = Tj max
50
1.8 K
/W
0
0
50
100
150
200
Average Forward Current (A)
250
40
60
80
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Revision: 25-Nov-13
Document Number: 93541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-SD200N/R Series
Vishay Semiconductors
400
DC
180°
120°
90°
60°
30°
350
300
0.
2
0.
SD200N/R Series
Tj = Tj max
1.8 K/W
RMS Limit
100
50
R
Conduction Period
K/
0.6 W
K/W
0.8
K/W
1.4 K
/W
200
150
W
W
ta
el
0.4
K/
K/
-D
3
W
250
K/
08
0.
=
A
W
hS
K/
Rt
12
0.
Maximum Average Forward Power Loss (W)
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0
0
50
100
150
200
250
300
350 40
Average Forward Current (A)
60
80
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
4500
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4000
3500
3000
2500
2000
1500
SD200N/R Series
1000
1
10
100
5000
4500
4000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj max.
No Voltage Reapplied
Rated Vrrm Reapplied
3500
3000
2500
2000
1500
SD200N/R Series
1000
0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10 000
SD200N/R Series
1000
Tj = 25 °C
Tj = Tj max.
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 25-Nov-13
Document Number: 93541
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD200N/R Series
Transient Thermal Impedance Z thJC (K/W)
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Vishay Semiconductors
1
Steady State Value:
R thJC = 0.23 K/W
(DC Operation)
0.1
SD200N/R Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
ORDERING INFORMATION TABLE
Device code
VS-
SD
20
0
N
24
P
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = Standard recovery
5
-
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 x 1.75
8
-
C = Ceramic housing
For metric device M12 x 1.75 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95302
Revision: 25-Nov-13
Document Number: 93541
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-205AC (DO-30)
DIMENSIONS in millimeters (inches)
16.5 (0.65)
MAX.
Ceramic housing
2.6 (0.10)
MAX.
35 (1.38)
MAX.
6.5 (0.26) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 16 mm2
(0.015 s.i.)
157 (6.18)
170 (6.69)
DIA. 22.5
(0.88) MAX.
55 (2.16)
MIN.
SW 27
12.5 (0.49)
MAX.
21 (0.82)
MAX.
1/2"-20UNF-2A*
*For metric device: M12 x 1.75
contact factory
Document Number: 95302
Revision: 11-Apr-08
For technical questions, contact: [email protected]
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