DLD101 LINEAR MODE CURRENT SINK LED DRIVER Features Mechanical Data • • • NEW PRODUCT • • • • • • • • • • Primarily Designed for Driving LED/s for Illumination, Signage and Backlighting Applications Ideally Suited for Linear Mode Constant Current Applications VBE Referenced Current Sink Circuit Includes: • N-Channel Enhancement Mode MOSFET (Q1) • Base Accessible Pre-Biased Transistor (Q2) High Voltage Capable (50V) Small Form Factor Surface Mount Package High Dissipation Capability Low Thermal Resistance Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3030D-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 7 Ordering Information: See Page 7 Weight: 0.0172 grams (approximate) • • • • • VCC Supply LED String RC 4 S2 B1 8 7 B1’ E1 6 5 R1 1 2 G D C R2 Q1 3 S2 B1 B1’ E1 8 7 6 5 VDS B Q2 R2 Q1 E Q2 5 R1 6 Option 3: S 7 8 ILED ≈ Option 3 VBE RS Options 1 & 2: Option 2 Option 1 1 2 3 4 1 2 3 4 D2 G2 NC C1 D2 G2 NC C1 Top View Internal Schematic Maximum Ratings: (Q1) Top View Package Pin-Out Configuration Characteristic Drain Current (Note 3) Body-Diode Continuous Current (Note 3) Notes: Option 2: Capacitor is across R2 for better noise performance. Typical Application Circuit for Linear Mode Current Sink LED Driver Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed ID IDM IS Value 100 ±20 1.0 0.8 3.0 1.0 Unit V V Value 50 -5 to +30 100 Unit V V mA A A A @TA = 25°C unless otherwise specified Characteristic Supply Voltage Input Voltage Output Current (DC) 1.1 VBE RS @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage Drain Current (Note 3) Maximum Ratings: (Q2) RS ILED ≈ Symbol VCC VIN IO 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DLD101 Document number: DS32007 Rev. 8 - 2 1 of 9 www.diodes.com April 2010 © Diodes Incorporated DLD101 Thermal Characteristics – Total Device Characteristic Symbol NEW PRODUCT Power Dissipation @TA = 25°C PD Thermal Resistance Junction to Ambient @TA = 25°C RθJA Thermal Resistance Junction to Case @TA = 25°C RθJC Operating and Storage Temperature Range Notes: Value 0.7 (Note 3) 0.9 (Note 4) 1.4 (Note 5) See Figure 1 (Notes 3, 4, & 5) See Figure 2 (Notes 3, 4, & 5) -55 to +150 TJ, TSTG Unit W °C/W °C/W °C 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6). 4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated. 5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated. Electrical Characteristics: (Q1) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 2.0 RDS (ON) ⎯ 4.1 0.85 0.99 V Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gfs VSD ⎯ ⎯ ⎯ ⎯ ⎯ 0.9 0.89 ⎯ 1.1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 1.5A VGS = 6V, ID = 1A VDS = 15V, ID = 1A VGS = 0V, IS = 1.5A Ciss Coss Crss ⎯ ⎯ ⎯ 129 14 8 ⎯ ⎯ ⎯ pF pF pF VDS = 50V, VGS = 0V f = 1.0MHz Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.4 0.9 1 7.9 11.4 14.3 9.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC VDS = 50V, VGS = 10V, ID = 1A ns VGS = 50V, VDS = 10V, ID = 1A, RG ≈ 6Ω Electrical Characteristics: (Q2) Characteristic (Note 6) Input Voltage Output Voltage Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Notes: Ω Test Condition @TA = 25°C unless otherwise specified Symbol VI(off) VI(on) VO(on) IO(off) G1 R1 R2/R1 Min 0.4 80 3.2 8 Typ 0.05 4.7 10 Max 1.5 0.3 0.5 6.2 12 Unit V V V μA kΩ - fT - 260 - MHz Test Condition VCC = 5V, IO = 100μA VCC = 0.3V, IO = 5mA IO/II = 5mA/0.25mA VCC = 50V, VI = 0V VO = 5V, IO = 10mA VCE = 10V, IE = 5mA, f = 100MHz 6. Short duration pulse test used to minimize self-heating effect. DLD101 Document number: DS32007 Rev. 8 - 2 2 of 9 www.diodes.com April 2010 © Diodes Incorporated DLD101 Thermal Characteristics 180 40 35 RθJC, THERMAL RESISTANCE, JUNCTION TO CASE AIR (°C/W) RθJA, THERMAL RESISTANCE, JUNCTION TO AMBIENT AIR (°C/W) T A = 25°C 140 120 100 80 60 40 T A = 25°C 30 25 20 15 10 5 20 0 0 0 5 10 15 20 25 30 35 40 2 COPPER AREA (mm ) Fig. 1 Thermal Resistance, Junction to Ambient Air Characteristic 0 5 10 15 20 25 30 35 2 COPPER AREA (mm ) Fig. 2 Thermal Resistance, Junction to Case Air Characteristic 40 1.6 1.4 PD, POWER DISSIPATION (W) NEW PRODUCT 160 T A = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 40 2 COPPER AREA (mm ) Fig. 3 Power Dissipation Characteristic DLD101 Document number: DS32007 Rev. 8 - 2 3 of 9 www.diodes.com April 2010 © Diodes Incorporated DLD101 Q1 Typical Performance Curves RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 VDS = VGS 9 ID, DRAIN CURRENT (A) 7 6 TA = 150°C 5 TA = 125°C 4 3 TA = 85°C 2 T A = 25°C 1 T A = -55°C 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 1 VGS = 6V VGS = 10V 0.1 0 4.5 0.4 0.8 1.2 ID, DRAIN CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 3.0 1.6 VGS = 10V 1.4 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1.5 1.2 TA = 150°C 1.0 T A = 125°C 0.8 T A = 85°C 0.6 TA = 25°C 0.4 T A = -55°C 0.2 2.5 2.0 0.4 0.8 1.2 ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature VGS = 10V ID = 1.5A 1.5 VGS = 6V ID = 1A 1.0 0.5 0 0 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature 1.6 1.5 -25 VGS(TH), GATE THRESHOLD VOLTAGE (V) 4.0 1.2 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 8 10 0.9 VGS = 6V ID = 1A 0.6 VGS = 10V ID = 1.5A 0.3 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature DLD101 Document number: DS32007 Rev. 8 - 2 4 of 9 www.diodes.com 3.8 3.6 3.4 3.2 ID = 1mA 3.0 2.8 ID = 250µA 2.6 2.4 2.2 2.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature April 2010 © Diodes Incorporated DLD101 Q1 Typical Performance Curves - continued 1,000 1.6 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 1.2 1.0 T A = 25°C 0.8 0.6 0.4 TA = 150°C 100 TA = 125°C 10 TA = 85°C TA = -55°C 0.2 TA = 25°C 1 0 0.6 0 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Source-Drain Diode Forward Voltage vs. Current 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 60 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage Q2 Typical Performance Curves 1,000 25 IB = 5mA 20 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) NEW PRODUCT 1.4 IB = 4mA 15 IB = 3mA 10 T A = 150°C 100 T A = 125°C TA = 85°C TA = 25°C TA = -55°C 10 IB = 2mA 5 IB = 1mA 0 0 1 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 12 Typical Collector Current vs. Collector-Emitter Voltage DLD101 Document number: DS32007 Rev. 8 - 2 5 of 9 www.diodes.com 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 13 Typical DC Current Gain vs. Collector Current 0.1 April 2010 © Diodes Incorporated DLD101 Q2 Typical Performance Curves - continued VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.6 0.5 0.4 0.3 0.2 TA = 125°C T A = 150°C 0.1 TA = 85°C TA = -55°C 0 T A = 25°C 1 10 100 200 IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) NEW PRODUCT 0.7 1.0 0.9 0.8 VCE = 1V TA = -55°C 0.7 0.6 TA = 25°C 0.5 TA = 85°C 0.4 T A = 125°C TA = 150°C 0.3 0.2 0.1 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 15 Base-Emitter Turn-On Voltage vs. Collector Current 1.0 0.9 0.8 VCE = 5V T A = -55°C 0.7 0.6 TA = 25°C 0.5 T A = 85°C 0.4 0.3 TA = 125°C TA = 150°C 0.2 0.1 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 16 Base-Emitter Turn-On Voltage vs. Collector Current DLD101 Document number: DS32007 Rev. 8 - 2 6 of 9 www.diodes.com April 2010 © Diodes Incorporated DLD101 Typical Application Circuit VCC Supply The DLD101 has been designed primarily for solid state lighting applications, to be used as a current sink circuit solution for LEDs. It features a N-channel MOSFET capable of 1A drive current and a prebiased NPN transistor (which allows direct connection to the base, or via a series base resistor). LED String 4 3 1 2 G Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. Note that the pre-biased transistor (Q2) has the option of bypassing the series base resistor by connecting directly to pin 7. The N-MOSFET (Q1) is configured as a VBE referenced current sink and is biased on by RC. The current passed through the LED string, MOSFET and source resistor, develops a voltage across RS that provides a bias to the NPN transistor. Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the DLD101's thermal resistance. D C VDS B Q2 R2 Q1 E R1 5 6 Option 3: S 7 8 ILED ≈ Option 3 VBE RS VDS = VCC – VF LED String – VRS PQ1 = VDS * ILED String Options 1 & 2: Option 2 Option 1 ILED ≈ 1.1 VBE RS Option 2: Capacitor is across R2 for better noise performance. RS PWM dimming functionality can be effected by either driving the NPN base via an additional resistor (thereby overriding the feedback from RS) or by pulling the gate of the MOSFET down by direct connection. The PWM control pulse stream can be provided by a micro-controller or simple 555 based circuitry. Fig. 12 Typical Application Circuit for Linear Mode Current Sink LED Driver Ordering Information (Note 7) Part Number DLD101-7 Notes: Case DFN3030D-8 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YYWW NEW PRODUCT RC L101 DLD101 Document number: DS32007 Rev. 8 - 2 DFN3030D-8 L101 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 to 53) 7 of 9 www.diodes.com April 2010 © Diodes Incorporated DLD101 Package Outline Dimensions A A3 SEATING PLANE A1 Dim A A1 A3 b D D1 D2 D3 D D3 NEW PRODUCT b E3 D1 E E1 D2 E2 Min 0.570 0 0.290 2.950 2.175 0.980 0.105 DFN3030D-8 Max Typ Dim Min 0.630 0.600 e 0.050 0.020 E 2.950 0.150 E1 1.800 0.390 0.340 E2 0.290 3.075 3.000 E3 0.175 2.375 2.275 L 0.300 1.180 1.080 Z 0.305 0.205 All Dimensions in mm Max 3.075 2.000 0.490 0.375 0.40 - Typ 0.650 3.000 1.900 0.390 0.275 0.350 0.355 L Z e BOTTOM VIEW Suggested Pad Layout C X G6 X3 C G G1 G2 G3 G4 G5 G6 X X1 Y2 X4 G3 G2 G1 Y Dimensions G Y5 Y3 Y1 G4 Y4 G5 X5 X1 DLD101 Document number: DS32007 Rev. 8 - 2 X2 X3 8 of 9 www.diodes.com Value Value Dimensions (in mm) (in mm) 0.650 X2 0.220 0.150 X3 0.375 0.950 X4 1.080 0.270 X5 0.150 0.135 Y 2.600 1.350 Y1 1.900 0.925 Y2 0.150 1.350 Y3 0.390 0.440 Y4 0.815 0.210 Y5 0.550 April 2010 © Diodes Incorporated DLD101 IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DLD101 Document number: DS32007 Rev. 8 - 2 9 of 9 www.diodes.com April 2010 © Diodes Incorporated