PTFB181702FC Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 – 1880 MHz Description The PTFB181702FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA Drive-up •Broadband internal matching VDD = 28 V, IDQ = 1.3 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 50 19 40 Gain (dB) Gain 18 30 17 20 1805 MHz 1842.5 MHz 1880 MHz 15 Efficiency 34 36 38 40 42 44 46 48 b181702fc-gc 50 • Typical CW performance, 1842 MHz, 28 V - Output power at P1dB = 180 W - Efficiency = 58% - Gain = 18.5 dB • Capable of handling 10:1 VSWR @28 V, 170 W (CW) output power Efficiency (%) 20 16 PTFB181702FC Package H-37248-4 • Integrated ESD protection • Low thermal resistance • Pb-free and RoHS compliant 10 52 0 Average Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 1300 mA, POUT = 30 W avg, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 18 19 — dB Drain Efficiency hD 24 26 — % Intermodulation Distortion IMD — –35 –33 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02, 2012-10-15 PTFB181702FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.11 — W Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS 2.5 3.0 3.5 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RqJC 0.27 °C/W Ordering Information Type and Version Order Code Package Description Shipping PTFB181702FC V1 PTFB181702FCV1XWSA1 H-37248-4, earless flange Tray PTFB181702FC V1 R250 PTFB181702FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 8 Rev. 02, 2012-10-15 PTFB181702FC Typical Performance (data taken in a production test fixture) Two-tone Intermodulation Distortion vs. Output Power Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.3 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -15 -20 1880 Lower 1880 Upper -20 -30 1842.5 Lower -25 1842.5 Upper -30 1805 Lower IMD (dBc) IMD (dBc) VDD = 28 V, IDQ = 1.3 A, ƒ1 = 1880 MHz, ƒ2 = 1879 MHz 1805 Upper -35 -40 -40 IM3 -50 IM5 -60 -45 -70 -50 -80 b181702fc-g1 34 36 38 40 42 44 46 48 50 52 Single-carrier Broadband Performance 41 43 46 48 51 53 Single-carrier Broadband Performance VDD = 28 V, IDQ = 1.3 A, POUT = 80 W, 3GPP WCDMA signal, PAR = 10 dB VDD = 28 V, IDQ = 1.3 A, POUT = 80 W, 3GPP WCDMA signal, PAR = 10 dB 48 -4 20 47 -6 Gain 46 18 45 17 44 16 Return Loss (dB) 21 Efficiency (%) Gain (dB) b181702fc-g5 38 Output Power, PEP (dBm) Output Power (dBm) 19 IM7 43 -8 -10 -15 Return Loss -20 -10 -25 ACPR -12 -14 Efficiency ACPR (dBc) -55 -30 -35 15 42 1690 1730 1770 1810 1850 1890 1930 1970 -16 -40 1690 1730 1770 1810 1850 1890 1930 1970 Frequency (MHz) Frequency (MHz) b181702fc-g2 Data Sheet b181702fc-g3 3 of 8 Rev. 02, 2012-10-15 PTFB181702FC Typical Performance (cont.) CW Gain vs. Output Power CW Gain & Efficiency vs. Output Power VDD = 28 V, ƒ = 1880 MHz 60 20.5 20 50 20.0 Gain 19 40 18 30 17 20 -10 °C +25 °C +85 °C 16 15 37 39 41 43 45 47 49 10 b181702fc-g4 51 53 Power Gain (dB) 21 Drain Efficiency (%) Gain (dB) VDD = 28 V, IDQ = 1.3 A, ƒ = 1880 MHz IDQ = 1.6 A IDQ = 1.3 A 19.5 19.0 IDQ = 1.0 A 18.5 18.0 17.5 0 37 39 41 43 45 47 49 b181702fc-g6 51 53 Output Power (dBm) Output Power (dBm) Broadband Circuit Impedance Z Source W Frequency Z Load W MHz R jX R jX 1805 2.99 –6.14 1.87 –4.46 1825 2.99 –6.08 1.52 –4.50 1845 3.00 –6.03 1.35 –4.34 1865 3.00 –5.97 1.25 –4.19 1880 3.00 –5.94 1.20 –4.08 Data Sheet 4 of 8 Z Source G1 G2 D1 Z Load S D2 Rev. 02, 2012-10-15 PTFB181702FC Reference Circuit VDD RO4350, .020 RO4350, .020 (60) (60) C801 R802 C802 C804 R803 R804 + R801 S2 S3 S1 C207 C206 C803 C205 VDD VG1 C107 R102 L102 C203 C102 C201 C105 C104 C204 RF_IN RF_OUT C103 VG2 C101 C211 C106 R101 L101 C202 C210 C209 VDD C208 PTFB181702F_OUT_01 PTFB181702F_IN_02 b 1 8 1 7 0 2 f c _ C D _ 1 0 - 1 8 - 2 0 1 2 Reference circuit assembly diagram (not to scale)* Data Sheet 5 of 8 Rev. 02, 2012-10-15 PTFB181702FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB181702FC Test Fixture Part No. LTN/PTFB181702FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Supplier P/N Input C101, C102 Capacitor, 10 μF Digi-Key 490-4393-2-ND C103, C104 Capacitor, 18 pF ATC ATC800A180JT250XT C105 Capacitor, 1.5 pF ATC ATC800A1R5BT250XT C106, C107 EMI Suppression Capacitor Digi-Key NFM18PS105R0J3D-ND C801, C804 Capacitor, 10 μF Digi-Key 587-1818-2-ND C802 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND C803 Capacitor, 1 μF Digi-Key 490-4736-2-ND L101, L102 Inductor, 27.3 nH Coilcraft 0908SQ-27NGLB R101, R102, R803 Resistor, 10 ohm Digi-Key P10GTR-ND R801 Resistor, 100 ohm Digi-Key P100GTR-ND R802 Resistor, 1300 ohm Digi-Key P1.3KGTR-ND R804 Resistor, 1200 ohm Digi-Key P1.2KGTR-ND S1 Potentiometer, 2k Ω Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP56-ND S3 Voltage Regulator Digi-Key LM7805 Output C201, C211 Chip capacitor, 1.2 pF ATC ATC800A1R2BT250XT C202, C203, C204 Chip capacitor, 18 pF ATC ATC800A180JT250XT C205, C208 Capacitor, 220 μF Digi-Key PCE4444TR-ND C206, C207, C209, C210 Capacitor, 10 μF Digi-Key 587-1818-2-ND Pinout Diagram (top view) S D1 D2 G1 G2 Pin D1 D2 G1 G2 S H-37248-4_pd_10-10-2012 Description Drain Device 1 Drain Device 2 Gate Device 1 Gate Device 2 Source (flange) Lead connections for PTFB181702FC Data Sheet 6 of 8 Rev. 02, 2012-10-15 PTFB181702FC H-37248-4 Package Outline Specifications Package H-37248-4 (8.890 [.350]) CL 2X 45° X 2.720 [45° X .107] +0.127 2X 4.826±0.510 [.190±0.020] D1 FLANGE 9.779 [.385] 4X R0.762 -0.380 D2 [ R.030 LID 9.398 [.370] +0.005 -0.015 ] C L G1 19.431±0.510 [.765±0.020] G2 4X 3.810 [.150] 2X 12.700 [.500] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 1.016 [.040] H-37248-4_po_02-18-2010 3.759 +0.010 [ .148 -0.005 ] C L +0.254 -0.127 S 20.574 [.810] DiagramNotes—unlessotherwisespecified: 1. InterpretdimensionsandtolerancesperASMEY14.5M-1994. 2. Primarydimensionsaremm.Alternatedimensionsareinches. 3. Alltolerances±0.127[.005]unlessspecifiedotherwise. 4. Pins:D1,D2–drains;S–source;G1,G2–gates. 5. Leadthickness:0.10+0.076/–0.025mm[0.004+0.003/–0.001inch]. 6. Goldplatingthickness:1.14±0.38micron[45±15microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 7 of 8 Rev. 02, 2012-10-15 PTFB181702FC V1 Revision History: 2012-10-15 Previous Version: 2012-05-29, Advance Specification Page Subjects (major changes since last revision) All Data Sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 02, 2012-10-15