Differential Magnetoresistive Sensor FP 201 L 100 Features • Extremely high output voltage • 2 independently biased magnetic circuits • Robust housing • Signal amplitude independent of operating speed • Screw mounting possible Typical applications • Detection of speed • Detection of position • Detection of sense of rotation Dimensions in mm Type Ordering Code FP 201 L 100 Q65210-L101 The differential magnetoresistive sensor FP 201 L 100 consists of two magnetically biased magneto resistors made from L-type InSb/NiSb, which in their unbiased state each have a basic resistance of about 125 Ω. They are series coupled as a voltage divider and are encapsuled in plastic as protection against mechanical stresses. This magnetically actuated sensor can be implemented as a direction dependent contactless switch where it shows a voltage change of about 1.3 V/mm in its linear region. Semiconductor Group 1 07.96 FP 201 L 100 Maximum ratings Parameter Symbol Value Unit Operating temperature TA Tstg Ptot VIN VI – 25 / + 100 °C – 25 / + 110 °C 600 mW 10 V > 100 V Gthcase GthA ≥ 10 ≥5 mW/K mW/K VIN N R1-3 5 V 700…1400 Ω M V0 ≤ 10 % ≤ 130 mV Open circuit output voltage5) (VIN N and δ = 0.5 mm) Vout pp > 2.2 V Cut-off frequency fc >7 kHz Storage temperature Power dissipation1) Supply voltage2) Insulation voltage between terminals and casing Thermal conductivity Characteristics (TA = 25 °C) Nominal supply voltage Total resistance, (δ = ∞, I ≤ 1 mA) Center symmetry3) (δ = ∞) Offset voltage4) (at VIN N and δ = ∞) This sensor is operated by a permanent magnet. Using the arrangement as shown in Fig. 1, the permanent magnet increases the internal biasing field through the righthand side magneto resistor (connections 2-3), and reduces the field through the left side magneto resistor (connections 1-2). As a result the resistance value of MR2-3 increases while that of MR1-2 decreases. When the permanent magnet is moved from left to right the above-mentioned process operates in reverse. 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(T) 3) R1 – 2 – R2 – 3 M = -------------------------------- × 100% for R1-2 > R2-3 R1 – 2 4) Corresponding to measuring circuit in Fig. 3 5) Corresponding to measuring circuit in Fig. 3 and arrangement as shown in Fig. 2 Semiconductor Group 2 FP 201 L 100 Fig. 1 Sensor operating by external permanent magnet Fig. 2 Fig. 3 Measuring arrangement with a permanent magnet Alnico 450 ∅ = 4 mm, 6 mm long Measuring circuit and output waveform A steeper gradient is achieved when using a horseshoe magnet. Semiconductor Group 3 FP 201 L 100 Output voltage (typical) versus temperature VOUTpp = f(TA), δ = 0.5 mm VOUTpp at TA = 25 °C ^= 100% Output voltage (typical) versus airgap VOUTpp = f(δ), TA = 25 °C VOUTpp at δ = 0.5 mm ^= 100% Total resistance (typical) versus temperature R1-3 = f(TA), δ = ∞ Max. power dissipation versus temperature Ptot = f(T), δ = ∞, T = Tcase, TA Semiconductor Group 4 FP 201 L 100 Maximum supply voltage versus temperature VIN = f(T), δ = ∞, T = Tcase, TA 1) Sensor mounted with good thermal contact to a heat sink 2) Operation in still air Semiconductor Group 5